Технічний опис TK6A65W,S5X(M Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 30W; TO220FP, Type of transistor: N-MOSFET, Power dissipation: 30W, Polarisation: unipolar, Kind of package: tube, Gate charge: 11nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 23.2A, Mounting: THT, Case: TO220FP, Drain-source voltage: 650V, Drain current: 5.8A, On-state resistance: 0.85Ω, кількість в упаковці: 1 шт.
Інші пропозиції TK6A65W,S5X(M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TK6A65W,S5X(M | Виробник : TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 30W; TO220FP Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: tube Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 23.2A Mounting: THT Case: TO220FP Drain-source voltage: 650V Drain current: 5.8A On-state resistance: 0.85Ω кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
TK6A65W,S5X(M | Виробник : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 30W; TO220FP Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: tube Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 23.2A Mounting: THT Case: TO220FP Drain-source voltage: 650V Drain current: 5.8A On-state resistance: 0.85Ω |
товар відсутній |