TK6R8A08QM,S4X Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 6.8MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Description: UMOS10 TO-220SIS 80V 6.8MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 79.76 грн |
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Технічний опис TK6R8A08QM,S4X Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 6.8MOHM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V.
Інші пропозиції TK6R8A08QM,S4X за ціною від 30.42 грн до 91.45 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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TK6R8A08QM,S4X | Виробник : Toshiba | MOSFET UMOS10 TO-220SIS 80V 6.8mohm |
на замовлення 415 шт: термін постачання 21-30 дні (днів) |
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TK6R8A08QM,S4X | Виробник : Toshiba | Trans MOSFET N-CH Si 80V 58A 3-Pin(3+Tab) TO-220SIS Tube |
товар відсутній |
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TK6R8A08QM,S4X | Виробник : Toshiba | Trans MOSFET N-CH Si 80V 58A 3-Pin(3+Tab) TO-220SIS Tube |
товар відсутній |