VN2460N3-G-P014 Microchip Technology
на замовлення 3478 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.25 грн |
| 100+ | 90.9 грн |
| 250+ | 78.38 грн |
| 500+ | 75.06 грн |
| 1000+ | 73.73 грн |
| 4000+ | 73.07 грн |
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Технічний опис VN2460N3-G-P014 Microchip Technology
Description: MOSFET N-CH 600V 160MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160mA (Tj), Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 2mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Інші пропозиції VN2460N3-G-P014
| Фото | Назва | Виробник | Інформація |
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VN2460N3-G-P014 | Виробник : Microchip Technology |
 Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 Ammo |
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| VN2460N3-G-P014 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 160mA; Idm: 0.5A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.16A Pulsed drain current: 0.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced кількість в упаковці: 1 шт |
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VN2460N3-G-P014 | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 160MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160mA (Tj) Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
товар відсутній |
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| VN2460N3-G-P014 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 160mA; Idm: 0.5A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.16A Pulsed drain current: 0.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced |
товар відсутній |