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VT6T11T2R

VT6T11T2R Rohm Semiconductor

datasheet?p=VT6T11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Виробник: Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.87 грн
15+ 19.51 грн
100+ 11.69 грн
500+ 10.17 грн
1000+ 6.91 грн
2000+ 6.36 грн
Мінімальне замовлення: 12
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Технічний опис VT6T11T2R Rohm Semiconductor

Description: PNP+PNP GENERAL PURPOSE AMPLIFIC, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 150mW, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V, Frequency - Transition: 350MHz, Supplier Device Package: VMT6.

Інші пропозиції VT6T11T2R

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
VT6T11T2R VT6T11T2R Виробник : Rohm Semiconductor datasheet?p=VT6T11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
товар відсутній
VT6T11T2R VT6T11T2R Виробник : ROHM Semiconductor datasheet?p=VT6T11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
товар відсутній