WNSC6D06650T6J WeEn Semiconductors
Виробник: WeEn SemiconductorsCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 45A
кількість в упаковці: 3000 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис WNSC6D06650T6J WeEn Semiconductors
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 6A, Max. load current: 12A, Semiconductor structure: single diode, Max. forward voltage: 1.55V, Case: DFN8x8N, Kind of package: reel; tape, Max. forward impulse current: 45A, кількість в упаковці: 3000 шт.
Інші пропозиції WNSC6D06650T6J
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| WNSC6D06650T6J | Виробник : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 12A Semiconductor structure: single diode Max. forward voltage: 1.55V Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 45A |
товар відсутній |