XP161A11A1PR-G Torex Semiconductor
на замовлення 1742 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.62 грн |
| 10+ | 40.26 грн |
| 100+ | 26.44 грн |
| 500+ | 23.71 грн |
| 1000+ | 17.34 грн |
| 2000+ | 15.08 грн |
| 5000+ | 14.28 грн |
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Технічний опис XP161A11A1PR-G Torex Semiconductor
Description: MOSFET N-CH 30V 4A SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 10V, Power Dissipation (Max): 2W (Ta), Supplier Device Package: SOT-89, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V.
Інші пропозиції XP161A11A1PR-G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| XP161A11A1PR-G | Виробник : TOREX |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 2W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 16A Power dissipation: 2W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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XP161A11A1PR-G | Виробник : Torex Semiconductor Ltd |
Description: MOSFET N-CH 30V 4A SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 10V Power Dissipation (Max): 2W (Ta) Supplier Device Package: SOT-89 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
товар відсутній |
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| XP161A11A1PR-G | Виробник : TOREX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 2W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 16A Power dissipation: 2W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |