YJL2305A YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.5A
Pulsed drain current: -23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
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Технічний опис YJL2305A YANGJIE TECHNOLOGY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W, Type of transistor: P-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -15V, Drain current: -4.5A, Pulsed drain current: -23A, Power dissipation: 1.2W, Case: SOT23, Gate-source voltage: ±10V, On-state resistance: 62mΩ, Mounting: SMD, Gate charge: 7.2nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 10 шт.
Інші пропозиції YJL2305A
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YJL2305A | Виробник : YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -15V Drain current: -4.5A Pulsed drain current: -23A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 62mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhanced |
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