Технічний опис ZTX653QSTZ Diodes Inc
Description: PWR MID PERF TRANSISTOR EP3 AMMO, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), Frequency - Transition: 175MHz, Supplier Device Package: E-Line (TO-92 compatible), Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1 W.
Інші пропозиції ZTX653QSTZ
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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ZTX653QSTZ | Виробник : Diodes Incorporated |
Description: PWR MID PERF TRANSISTOR EP3 AMMO Packaging: Tape & Box (TB) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 175MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
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ZTX653QSTZ | Виробник : Diodes Incorporated | Bipolar Transistors - BJT Pwr Mid Perf Transistor EP3 AMMO 2K |
товар відсутній |