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WNSC2D04650DJ WNSC2D04650DJ WeEn Semiconductors WNSC2D04650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 24A
кількість в упаковці: 7500 шт
товар відсутній
WNSC2D04650Q WeEn Semiconductors WNSC2D04650Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 24A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
WNSC2D04650TJ WeEn Semiconductors WNSC2D04650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 24A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D04650XQ WNSC2D04650XQ WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 20A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D06650DJ WNSC2D06650DJ WeEn Semiconductors WNSC2D06650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 36A
Load current: 6A
кількість в упаковці: 2500 шт
товар відсутній
WNSC2D06650TJ WeEn Semiconductors Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 36A
Load current: 6A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D06650XQ WNSC2D06650XQ WeEn Semiconductors WNSC2D06650X.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 30A
Load current: 6A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D08650DJ WNSC2D08650DJ WeEn Semiconductors WNSC2D08650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
кількість в упаковці: 7500 шт
товар відсутній
WNSC2D08650TJ WeEn Semiconductors WNSC2D08650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D101200WQ WNSC2D101200WQ WeEn Semiconductors WNSC2D101200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.88V
Type of diode: Schottky rectifying
Max. forward impulse current: 72A
Load current: 10A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D10650BJ WeEn Semiconductors WNSC2D10650BJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 2.2V
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
кількість в упаковці: 1 шт
товар відсутній
WNSC2D10650DJ WNSC2D10650DJ WeEn Semiconductors Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
кількість в упаковці: 2500 шт
товар відсутній
WNSC2D10650TJ WeEn Semiconductors WNSC2D10650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D10650XQ WNSC2D10650XQ WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D151200WQ WNSC2D151200WQ WeEn Semiconductors WNSC2D151200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Type of diode: Schottky rectifying
Max. forward impulse current: 102A
Load current: 15A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D16650CWQ WNSC2D16650CWQ WeEn Semiconductors WNSC2D16650CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Max. load current: 16A
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A x2
кількість в упаковці: 240 шт
товар відсутній
WNSC2D201200CWQ WNSC2D201200CWQ WeEn Semiconductors WNSC2D201200CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 72A
Load current: 10A x2
кількість в упаковці: 480 шт
товар відсутній
WNSC2D201200WQ WNSC2D201200WQ WeEn Semiconductors WNSC2D201200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.1V
Type of diode: Schottky rectifying
Max. forward impulse current: 125A
Load current: 20A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D20650CJQ WNSC2D20650CJQ WeEn Semiconductors WNSC2D20650CJ%20%281%29.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.8V
кількість в упаковці: 2400 шт
товар відсутній
WNSC2D20650CWQ WNSC2D20650CWQ WeEn Semiconductors WNSC2D20650CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.8V
кількість в упаковці: 480 шт
товар відсутній
WNSC2D301200CWQ WNSC2D301200CWQ WeEn Semiconductors WNSC2D301200CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 30A
Type of diode: Schottky rectifying
Max. forward impulse current: 102A
Load current: 15A x2
кількість в упаковці: 600 шт
товар відсутній
WNSC2D401200CWQ WNSC2D401200CWQ WeEn Semiconductors WNSC2D401200CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 40A
Type of diode: Schottky rectifying
Max. forward impulse current: 125A
Load current: 20A x2
кількість в упаковці: 600 шт
товар відсутній
WNSC2D401200W6Q WeEn Semiconductors WNSC2D401200W6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Max. load current: 80A
Type of diode: Schottky rectifying
Max. forward impulse current: 350A
Load current: 40A
кількість в упаковці: 1 шт
товар відсутній
WNSC2D501200W6Q WeEn Semiconductors WNSC2D501200W6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Max. load current: 100A
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Load current: 50A
кількість в упаковці: 1 шт
товар відсутній
WNSC2M1K0170WQ WeEn Semiconductors WNSC2M1K0170WQ.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 240 шт
товар відсутній
WNSC2M20120R6Q WeEn Semiconductors WNSC2M20120R.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
WNSC2M40120R6Q WeEn Semiconductors WNSC2M40120R.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
WNSC401200CWQ WNSC401200CWQ WeEn Semiconductors WNSC401200CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 200A
кількість в упаковці: 480 шт
товар відсутній
WNSC5D046506Q WeEn Semiconductors WNSC5D046506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 28A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
WNSC5D04650D6J WeEn Semiconductors WNSC5D04650D6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 26A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
WNSC5D06650T6J WeEn Semiconductors WNSC5D06650T6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 3000 шт
товар відсутній
WNSC5D20650X6Q WeEn Semiconductors WNSC5D20650X6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 80A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
WNSC6D01650MBJ WeEn Semiconductors WNSC6D01650MBJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 18A
кількість в упаковці: 1 шт
товар відсутній
WNSC6D046506Q WeEn Semiconductors WNSC6D046506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.55V
кількість в упаковці: 1000 шт
товар відсутній
WNSC6D04650Q WNSC6D04650Q WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 30A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D06650Q WNSC6D06650Q WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 46A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D06650T6J WeEn Semiconductors WNSC6D06650T6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 45A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D08650Q WeEn Semiconductors WNSC6D08650Q THT Schottky diodes
товар відсутній
WNSC6D10650B6J WeEn Semiconductors WNSC6D10650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 80A
Max. forward voltage: 1.65V
кількість в упаковці: 1 шт
товар відсутній
WNSC6D10650Q WNSC6D10650Q WeEn Semiconductors WNSC6D10650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 75A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D16650CW6Q WeEn Semiconductors WNSC6D16650CW6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 32A
Max. forward voltage: 1.65V
Load current: 16A
Max. forward impulse current: 110A
кількість в упаковці: 1 шт
товар відсутній
WNSC6D20650B6J WeEn Semiconductors WNSC6D20650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 120A
Max. forward voltage: 1.8V
кількість в упаковці: 1 шт
товар відсутній
WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 155A
кількість в упаковці: 1200 шт
товар відсутній
WNSCM80120R6Q WeEn Semiconductors WNSCM80120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
Z0103MA,116 Z0103MA,116 WeEn Semiconductors Z0103MA.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 392 шт:
термін постачання 7-14 дні (днів)
14+21.09 грн
28+ 9.94 грн
100+ 8.54 грн
126+ 8.02 грн
346+ 7.59 грн
2500+ 7.33 грн
Мінімальне замовлення: 14
Z0103MA,126 Z0103MA,126 WeEn Semiconductors Z0103MA.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 7-14 дні (днів)
10+27.87 грн
25+ 10.75 грн
100+ 8.54 грн
128+ 7.94 грн
353+ 7.51 грн
2500+ 7.25 грн
Мінімальне замовлення: 10
Z0103MA,412 Z0103MA,412 WeEn Semiconductors Z0103MA.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
на замовлення 4228 шт:
термін постачання 7-14 дні (днів)
14+20.72 грн
28+ 9.68 грн
100+ 8.2 грн
128+ 7.94 грн
353+ 7.51 грн
500+ 7.42 грн
5000+ 7.25 грн
Мінімальне замовлення: 14
Z0103MA0,116 WeEn Semiconductors Z0103MA0.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
Z0103MN,135 Z0103MN,135 WeEn Semiconductors z0103mn.pdf Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 1200 шт:
термін постачання 7-14 дні (днів)
20+15.05 грн
25+ 12.9 грн
100+ 10.96 грн
110+ 9.49 грн
295+ 8.97 грн
2000+ 8.71 грн
Мінімальне замовлення: 20
Z0103MN0,135 Z0103MN0,135 WeEn Semiconductors Z0103MN0.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3796 шт:
термін постачання 7-14 дні (днів)
14+21.37 грн
25+ 12.9 грн
100+ 11.21 грн
106+ 9.66 грн
289+ 9.14 грн
4000+ 8.71 грн
Мінімальне замовлення: 14
Z0103NA,412 WeEn Semiconductors z0103na.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0103NA0,412 WeEn Semiconductors z0103na0.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0103NA0QP WeEn Semiconductors z0103na0.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
Z0103NN,135 Z0103NN,135 WeEn Semiconductors Z0103NN.PDF Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2635 шт:
термін постачання 7-14 дні (днів)
14+21.09 грн
25+ 12.45 грн
100+ 10.7 грн
114+ 8.89 грн
314+ 8.45 грн
Мінімальне замовлення: 14
Z0103NN0,135 Z0103NN0,135 WeEn Semiconductors Z0103NN0.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2256 шт:
термін постачання 7-14 дні (днів)
6+54.81 грн
12+ 22.93 грн
25+ 13.29 грн
100+ 11.99 грн
111+ 9.14 грн
306+ 8.63 грн
Мінімальне замовлення: 6
Z0107MA,116 Z0107MA,116 WeEn Semiconductors z0107ma.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 5432 шт:
термін постачання 7-14 дні (днів)
7+43.66 грн
14+ 19.71 грн
25+ 11.39 грн
100+ 10.27 грн
120+ 8.45 грн
330+ 8.02 грн
10000+ 7.76 грн
Мінімальне замовлення: 7
Z0107MA,412 WeEn Semiconductors z0107ma.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0107MN,135 Z0107MN,135 WeEn Semiconductors Z0107MN.pdf description Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 1590 шт:
термін постачання 7-14 дні (днів)
25+11.91 грн
100+ 10.18 грн
105+ 9.83 грн
285+ 9.32 грн
500+ 9.06 грн
4000+ 8.97 грн
Мінімальне замовлення: 25
Z0107MN0,135 Z0107MN0,135 WeEn Semiconductors Z0107MN0.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1120 шт:
термін постачання 7-14 дні (днів)
14+21.09 грн
28+ 9.85 грн
100+ 8.37 грн
129+ 7.85 грн
355+ 7.42 грн
4000+ 7.16 грн
Мінімальне замовлення: 14
Z0107NA,116 WeEn Semiconductors z0107na.pdf WEEN-S-A0001703492-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
WNSC2D04650DJ WNSC2D04650D.pdf
WNSC2D04650DJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 24A
кількість в упаковці: 7500 шт
товар відсутній
WNSC2D04650Q WNSC2D04650Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 24A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
WNSC2D04650TJ WNSC2D04650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 24A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D04650XQ
WNSC2D04650XQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 20A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D06650DJ WNSC2D06650D.pdf
WNSC2D06650DJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 36A
Load current: 6A
кількість в упаковці: 2500 шт
товар відсутній
WNSC2D06650TJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 36A
Load current: 6A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D06650XQ WNSC2D06650X.pdf
WNSC2D06650XQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 30A
Load current: 6A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D08650DJ WNSC2D08650D.pdf
WNSC2D08650DJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
кількість в упаковці: 7500 шт
товар відсутній
WNSC2D08650TJ WNSC2D08650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D101200WQ WNSC2D101200W.pdf
WNSC2D101200WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.88V
Type of diode: Schottky rectifying
Max. forward impulse current: 72A
Load current: 10A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D10650BJ WNSC2D10650BJ.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 2.2V
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
кількість в упаковці: 1 шт
товар відсутній
WNSC2D10650DJ
WNSC2D10650DJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
кількість в упаковці: 2500 шт
товар відсутній
WNSC2D10650TJ WNSC2D10650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D10650XQ
WNSC2D10650XQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D151200WQ WNSC2D151200W.pdf
WNSC2D151200WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Type of diode: Schottky rectifying
Max. forward impulse current: 102A
Load current: 15A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D16650CWQ WNSC2D16650CW.pdf
WNSC2D16650CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Max. load current: 16A
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A x2
кількість в упаковці: 240 шт
товар відсутній
WNSC2D201200CWQ WNSC2D201200CW.pdf
WNSC2D201200CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 72A
Load current: 10A x2
кількість в упаковці: 480 шт
товар відсутній
WNSC2D201200WQ WNSC2D201200W.pdf
WNSC2D201200WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.1V
Type of diode: Schottky rectifying
Max. forward impulse current: 125A
Load current: 20A
кількість в упаковці: 3000 шт
товар відсутній
WNSC2D20650CJQ WNSC2D20650CJ%20%281%29.pdf
WNSC2D20650CJQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.8V
кількість в упаковці: 2400 шт
товар відсутній
WNSC2D20650CWQ WNSC2D20650CW.pdf
WNSC2D20650CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.8V
кількість в упаковці: 480 шт
товар відсутній
WNSC2D301200CWQ WNSC2D301200CW.pdf
WNSC2D301200CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 30A
Type of diode: Schottky rectifying
Max. forward impulse current: 102A
Load current: 15A x2
кількість в упаковці: 600 шт
товар відсутній
WNSC2D401200CWQ WNSC2D401200CW.pdf
WNSC2D401200CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 40A
Type of diode: Schottky rectifying
Max. forward impulse current: 125A
Load current: 20A x2
кількість в упаковці: 600 шт
товар відсутній
WNSC2D401200W6Q WNSC2D401200W6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Max. load current: 80A
Type of diode: Schottky rectifying
Max. forward impulse current: 350A
Load current: 40A
кількість в упаковці: 1 шт
товар відсутній
WNSC2D501200W6Q WNSC2D501200W6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Max. load current: 100A
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Load current: 50A
кількість в упаковці: 1 шт
товар відсутній
WNSC2M1K0170WQ WNSC2M1K0170WQ.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 240 шт
товар відсутній
WNSC2M20120R6Q WNSC2M20120R.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
WNSC2M40120R6Q WNSC2M40120R.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
WNSC401200CWQ WNSC401200CW.pdf
WNSC401200CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 200A
кількість в упаковці: 480 шт
товар відсутній
WNSC5D046506Q WNSC5D046506Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 28A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
WNSC5D04650D6J WNSC5D04650D6J.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 26A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
WNSC5D06650T6J WNSC5D06650T6J.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 3000 шт
товар відсутній
WNSC5D20650X6Q WNSC5D20650X6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 80A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
WNSC6D01650MBJ WNSC6D01650MBJ.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 18A
кількість в упаковці: 1 шт
товар відсутній
WNSC6D046506Q WNSC6D046506Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.55V
кількість в упаковці: 1000 шт
товар відсутній
WNSC6D04650Q
WNSC6D04650Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 30A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D06650Q
WNSC6D06650Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 46A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D06650T6J WNSC6D06650T6J.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 45A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D08650Q
Виробник: WeEn Semiconductors
WNSC6D08650Q THT Schottky diodes
товар відсутній
WNSC6D10650B6J WNSC6D10650B6J.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 80A
Max. forward voltage: 1.65V
кількість в упаковці: 1 шт
товар відсутній
WNSC6D10650Q WNSC6D10650.pdf
WNSC6D10650Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 75A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D16650CW6Q WNSC6D16650CW6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 32A
Max. forward voltage: 1.65V
Load current: 16A
Max. forward impulse current: 110A
кількість в упаковці: 1 шт
товар відсутній
WNSC6D20650B6J WNSC6D20650B6J.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 120A
Max. forward voltage: 1.8V
кількість в упаковці: 1 шт
товар відсутній
WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 155A
кількість в упаковці: 1200 шт
товар відсутній
WNSCM80120R6Q WNSCM80120R6Q.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
Z0103MA,116 Z0103MA.pdf _ween_psg2020.pdf
Z0103MA,116
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 392 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
14+21.09 грн
28+ 9.94 грн
100+ 8.54 грн
126+ 8.02 грн
346+ 7.59 грн
2500+ 7.33 грн
Мінімальне замовлення: 14
Z0103MA,126 Z0103MA.pdf _ween_psg2020.pdf
Z0103MA,126
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
10+27.87 грн
25+ 10.75 грн
100+ 8.54 грн
128+ 7.94 грн
353+ 7.51 грн
2500+ 7.25 грн
Мінімальне замовлення: 10
Z0103MA,412 Z0103MA.pdf _ween_psg2020.pdf
Z0103MA,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
на замовлення 4228 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
14+20.72 грн
28+ 9.68 грн
100+ 8.2 грн
128+ 7.94 грн
353+ 7.51 грн
500+ 7.42 грн
5000+ 7.25 грн
Мінімальне замовлення: 14
Z0103MA0,116 Z0103MA0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
Z0103MN,135 z0103mn.pdf
Z0103MN,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 1200 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+15.05 грн
25+ 12.9 грн
100+ 10.96 грн
110+ 9.49 грн
295+ 8.97 грн
2000+ 8.71 грн
Мінімальне замовлення: 20
Z0103MN0,135 Z0103MN0.pdf _ween_psg2020.pdf
Z0103MN0,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3796 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
14+21.37 грн
25+ 12.9 грн
100+ 11.21 грн
106+ 9.66 грн
289+ 9.14 грн
4000+ 8.71 грн
Мінімальне замовлення: 14
Z0103NA,412 z0103na.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0103NA0,412 z0103na0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0103NA0QP z0103na0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
Z0103NN,135 Z0103NN.PDF
Z0103NN,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2635 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
14+21.09 грн
25+ 12.45 грн
100+ 10.7 грн
114+ 8.89 грн
314+ 8.45 грн
Мінімальне замовлення: 14
Z0103NN0,135 Z0103NN0.pdf _ween_psg2020.pdf
Z0103NN0,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2256 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
6+54.81 грн
12+ 22.93 грн
25+ 13.29 грн
100+ 11.99 грн
111+ 9.14 грн
306+ 8.63 грн
Мінімальне замовлення: 6
Z0107MA,116 z0107ma.pdf
Z0107MA,116
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 5432 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
7+43.66 грн
14+ 19.71 грн
25+ 11.39 грн
100+ 10.27 грн
120+ 8.45 грн
330+ 8.02 грн
10000+ 7.76 грн
Мінімальне замовлення: 7
Z0107MA,412 z0107ma.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0107MN,135 description Z0107MN.pdf
Z0107MN,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 1590 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
25+11.91 грн
100+ 10.18 грн
105+ 9.83 грн
285+ 9.32 грн
500+ 9.06 грн
4000+ 8.97 грн
Мінімальне замовлення: 25
Z0107MN0,135 Z0107MN0.pdf _ween_psg2020.pdf
Z0107MN0,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1120 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
14+21.09 грн
28+ 9.85 грн
100+ 8.37 грн
129+ 7.85 грн
355+ 7.42 грн
4000+ 7.16 грн
Мінімальне замовлення: 14
Z0107NA,116 z0107na.pdf WEEN-S-A0001703492-1.pdf?t.download=true&u=5oefqw
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
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