Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4040) > Сторінка 54 з 68
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM100A23STG | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw Technology: POWER MOS 7® Drain-source voltage: 1kV Drain current: 27A Pulsed drain current: 144A Power dissipation: 694W Case: SP4 Gate-source voltage: ±30V On-state resistance: 0.27Ω Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APTM100AM90FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Technology: FREDFET; POWER MOS 7® Drain-source voltage: 1kV Drain current: 59A Pulsed drain current: 312A Power dissipation: 1.25kW Case: SP6C Gate-source voltage: ±30V On-state resistance: 0.105Ω Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Topology: MOSFET half-bridge Mechanical mounting: screw Type of module: MOSFET transistor |
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| APTM100AM90FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Technology: FREDFET; POWER MOS 7® Drain-source voltage: 1kV Drain current: 59A Pulsed drain current: 312A Power dissipation: 1.25kW Case: SP6C Gate-source voltage: ±30V On-state resistance: 0.105Ω Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Topology: MOSFET half-bridge Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APTM100DA18TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 33A Case: SP4 Topology: boost chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 0.21Ω Pulsed drain current: 172A Power dissipation: 780W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM100DA18TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 33A Case: SP4 Topology: boost chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 0.21Ω Pulsed drain current: 172A Power dissipation: 780W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM100DAM90G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Case: SP6C Pulsed drain current: 312A Power dissipation: 1.25kW On-state resistance: 0.105Ω Drain current: 59A Drain-source voltage: 1kV |
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| APTM100DAM90G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Case: SP6C Pulsed drain current: 312A Power dissipation: 1.25kW On-state resistance: 0.105Ω Drain current: 59A Drain-source voltage: 1kV кількість в упаковці: 1 шт |
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| APTM100DSK35T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A Technology: POWER MOS 7® Semiconductor structure: diode/transistor Case: SP3 Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: buck chopper x2; NTC thermistor Pulsed drain current: 88A Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω |
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| APTM100DSK35T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A Technology: POWER MOS 7® Semiconductor structure: diode/transistor Case: SP3 Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: buck chopper x2; NTC thermistor Pulsed drain current: 88A Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω кількість в упаковці: 1 шт |
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| APTM100H18FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Drain current: 33A Drain-source voltage: 1kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 0.21Ω Topology: H-bridge Pulsed drain current: 172A Power dissipation: 780W |
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| APTM100H18FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Drain current: 33A Drain-source voltage: 1kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 0.21Ω Topology: H-bridge Pulsed drain current: 172A Power dissipation: 780W кількість в упаковці: 1 шт |
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| APTM100H35FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 17A Drain-source voltage: 1kV Electrical mounting: Press-in PCB Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP3 On-state resistance: 0.42Ω Topology: H-bridge; NTC thermistor Pulsed drain current: 88A Power dissipation: 390W Technology: FREDFET; POWER MOS 7® |
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| APTM100H35FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 17A Drain-source voltage: 1kV Electrical mounting: Press-in PCB Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP3 On-state resistance: 0.42Ω Topology: H-bridge; NTC thermistor Pulsed drain current: 88A Power dissipation: 390W Technology: FREDFET; POWER MOS 7® кількість в упаковці: 1 шт |
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| APTM100H35FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 17A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP4 On-state resistance: 0.42Ω Topology: H-bridge; NTC thermistor Pulsed drain current: 88A Power dissipation: 390W Technology: FREDFET; POWER MOS 7® |
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| APTM100H35FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 17A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP4 On-state resistance: 0.42Ω Topology: H-bridge; NTC thermistor Pulsed drain current: 88A Power dissipation: 390W Technology: FREDFET; POWER MOS 7® кількість в упаковці: 1 шт |
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| APTM100H45FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 14A Drain-source voltage: 1kV Electrical mounting: Press-in PCB Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP3 On-state resistance: 0.54Ω Topology: H-bridge; NTC thermistor Pulsed drain current: 72A Power dissipation: 357W Technology: FREDFET; POWER MOS 7® |
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| APTM100H45FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 14A Drain-source voltage: 1kV Electrical mounting: Press-in PCB Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP3 On-state resistance: 0.54Ω Topology: H-bridge; NTC thermistor Pulsed drain current: 72A Power dissipation: 357W Technology: FREDFET; POWER MOS 7® кількість в упаковці: 1 шт |
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| APTM100H45SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw Type of module: MOSFET transistor Case: SP4 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 72A |
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| APTM100H45SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw Type of module: MOSFET transistor Case: SP4 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 72A кількість в упаковці: 1 шт |
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| APTM100H45STG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 14A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 0.54Ω Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor Pulsed drain current: 72A Power dissipation: 357W Technology: POWER MOS 7® |
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| APTM100H45STG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 14A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 0.54Ω Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor Pulsed drain current: 72A Power dissipation: 357W Technology: POWER MOS 7® кількість в упаковці: 1 шт |
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| APTM100H46FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 14A Drain-source voltage: 1kV Electrical mounting: Press-in PCB Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP3 On-state resistance: 552mΩ Topology: H-bridge; NTC thermistor Pulsed drain current: 120A Power dissipation: 357W Technology: POWER MOS 8® |
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| APTM100H46FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 14A Drain-source voltage: 1kV Electrical mounting: Press-in PCB Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP3 On-state resistance: 552mΩ Topology: H-bridge; NTC thermistor Pulsed drain current: 120A Power dissipation: 357W Technology: POWER MOS 8® кількість в упаковці: 1 шт |
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| APTM100SK33T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A Technology: POWER MOS 8® Semiconductor structure: diode/transistor Case: SP1 Power dissipation: 390W Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 140A Drain-source voltage: 1kV Drain current: 17A On-state resistance: 396mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw |
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| APTM100SK33T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A Technology: POWER MOS 8® Semiconductor structure: diode/transistor Case: SP1 Power dissipation: 390W Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 140A Drain-source voltage: 1kV Drain current: 17A On-state resistance: 396mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM100TA35FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Case: SP6P Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 17A Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 88A On-state resistance: 0.42Ω |
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| APTM100TA35FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Case: SP6P Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 17A Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 88A On-state resistance: 0.42Ω кількість в упаковці: 1 шт |
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| APTM100TA35SCTPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Case: SP6P Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 17A Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: NTC thermistor Pulsed drain current: 88A On-state resistance: 0.42Ω |
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| APTM100TA35SCTPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Case: SP6P Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 17A Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: NTC thermistor Pulsed drain current: 88A On-state resistance: 0.42Ω кількість в упаковці: 1 шт |
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| APTM100UM45DAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 160A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 52mΩ Topology: single transistor + series diode Pulsed drain current: 860A Power dissipation: 5kW Technology: POWER MOS 7® |
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| APTM100UM45DAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 160A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 52mΩ Topology: single transistor + series diode Pulsed drain current: 860A Power dissipation: 5kW Technology: POWER MOS 7® кількість в упаковці: 1 шт |
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| APTM100UM45FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Technology: POWER MOS 7® Case: SP6C Drain-source voltage: 1kV Drain current: 160A On-state resistance: 52mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 860A Semiconductor structure: single transistor |
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| APTM100UM45FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Technology: POWER MOS 7® Case: SP6C Drain-source voltage: 1kV Drain current: 160A On-state resistance: 52mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 860A Semiconductor structure: single transistor кількість в упаковці: 1 шт |
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| APTM100UM60FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw Technology: POWER MOS 7® Case: SP6C Drain-source voltage: 1kV Drain current: 97A On-state resistance: 70mΩ Power dissipation: 2272W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 516A Semiconductor structure: single transistor |
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| APTM100UM60FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw Technology: POWER MOS 7® Case: SP6C Drain-source voltage: 1kV Drain current: 97A On-state resistance: 70mΩ Power dissipation: 2272W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 516A Semiconductor structure: single transistor кількість в упаковці: 1 шт |
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| APTM100UM65DAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 110A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 78mΩ Pulsed drain current: 580A Power dissipation: 3.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM100UM65DAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 110A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 78mΩ Pulsed drain current: 580A Power dissipation: 3.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM100UM65SAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 110A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 78mΩ Topology: single transistor + series diode - parrallel diode Pulsed drain current: 580A Power dissipation: 3.25kW Technology: POWER MOS 7® |
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| APTM100UM65SAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 110A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 78mΩ Topology: single transistor + series diode - parrallel diode Pulsed drain current: 580A Power dissipation: 3.25kW Technology: POWER MOS 7® кількість в упаковці: 1 шт |
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| APTM100UM65SCAVG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Pulsed drain current: 580A Case: SP6 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 110A On-state resistance: 78mΩ Power dissipation: 3.25kW |
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| APTM100UM65SCAVG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Pulsed drain current: 580A Case: SP6 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 110A On-state resistance: 78mΩ Power dissipation: 3.25kW кількість в упаковці: 1 шт |
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| APTM10AM02FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1900A Case: SP6C |
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| APTM10AM02FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1900A Case: SP6C кількість в упаковці: 1 шт |
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| APTM10AM05FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W Technology: FREDFET; POWER MOS 5® Drain-source voltage: 100V Drain current: 207A Pulsed drain current: 1100A Power dissipation: 780W Case: SP4 Gate-source voltage: ±30V On-state resistance: 5mΩ Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Topology: MOSFET half-bridge; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor |
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| APTM10AM05FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W Technology: FREDFET; POWER MOS 5® Drain-source voltage: 100V Drain current: 207A Pulsed drain current: 1100A Power dissipation: 780W Case: SP4 Gate-source voltage: ±30V On-state resistance: 5mΩ Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Topology: MOSFET half-bridge; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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| APTM10DAM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 1900A Case: SP6C |
товар відсутній |
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| APTM10DAM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 1900A Case: SP6C кількість в упаковці: 1 шт |
товар відсутній |
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| APTM10DAM05TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Electrical mounting: FASTON connectors; screw Case: SP4 Mechanical mounting: screw Semiconductor structure: diode/transistor Drain current: 207A Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper; NTC thermistor Pulsed drain current: 1100A Type of module: MOSFET transistor On-state resistance: 5mΩ Power dissipation: 780W Drain-source voltage: 100V |
товар відсутній |
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| APTM10DAM05TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Electrical mounting: FASTON connectors; screw Case: SP4 Mechanical mounting: screw Semiconductor structure: diode/transistor Drain current: 207A Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper; NTC thermistor Pulsed drain current: 1100A Type of module: MOSFET transistor On-state resistance: 5mΩ Power dissipation: 780W Drain-source voltage: 100V кількість в упаковці: 1 шт |
товар відсутній |
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| APTM10DHM05G | MICROCHIP (MICROSEMI) |
APTM10DHM05G Transistor modules MOSFET |
товар відсутній |
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| APTM10DSKM09T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A Electrical mounting: Press-in PCB Case: SP3 Mechanical mounting: screw Semiconductor structure: diode/transistor Drain current: 100A Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper x2; NTC thermistor Pulsed drain current: 430A Type of module: MOSFET transistor On-state resistance: 10mΩ Power dissipation: 390W Drain-source voltage: 100V |
товар відсутній |
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| APTM10DSKM09T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A Electrical mounting: Press-in PCB Case: SP3 Mechanical mounting: screw Semiconductor structure: diode/transistor Drain current: 100A Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper x2; NTC thermistor Pulsed drain current: 430A Type of module: MOSFET transistor On-state resistance: 10mΩ Power dissipation: 390W Drain-source voltage: 100V кількість в упаковці: 1 шт |
товар відсутній |
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| APTM10DSKM19T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper x2; NTC thermistor Case: SP3 Electrical mounting: Press-in PCB Power dissipation: 208W Technology: POWER MOS 5® Mechanical mounting: screw Pulsed drain current: 300A Drain current: 50A Gate-source voltage: ±30V Drain-source voltage: 100V On-state resistance: 21mΩ |
товар відсутній |
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| APTM10DSKM19T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper x2; NTC thermistor Case: SP3 Electrical mounting: Press-in PCB Power dissipation: 208W Technology: POWER MOS 5® Mechanical mounting: screw Pulsed drain current: 300A Drain current: 50A Gate-source voltage: ±30V Drain-source voltage: 100V On-state resistance: 21mΩ кількість в упаковці: 1 шт |
товар відсутній |
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| APTM10DUM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 100V; 370A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET x2 Pulsed drain current: 1900A Case: SP6C |
товар відсутній |
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| APTM10DUM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 100V; 370A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET x2 Pulsed drain current: 1900A Case: SP6C кількість в упаковці: 1 шт |
товар відсутній |
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| APTM10HM05FG | MICROCHIP (MICROSEMI) |
APTM10HM05FG Transistor modules MOSFET |
товар відсутній |
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| APTM10HM09FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 430A Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 100A On-state resistance: 10mΩ Power dissipation: 390W |
товар відсутній |
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| APTM10HM09FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 430A Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 100A On-state resistance: 10mΩ Power dissipation: 390W кількість в упаковці: 1 шт |
товар відсутній |
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| APTM10HM19FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 50A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 300A Power dissipation: 208W Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |
| APTM100A23STG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw
Technology: POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SP4
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw
Technology: POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SP4
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APTM100AM90FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 59A
Pulsed drain current: 312A
Power dissipation: 1.25kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 59A
Pulsed drain current: 312A
Power dissipation: 1.25kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APTM100AM90FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 59A
Pulsed drain current: 312A
Power dissipation: 1.25kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 59A
Pulsed drain current: 312A
Power dissipation: 1.25kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APTM100DA18TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 33A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 0.21Ω
Pulsed drain current: 172A
Power dissipation: 780W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 33A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 0.21Ω
Pulsed drain current: 172A
Power dissipation: 780W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM100DA18TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 33A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 0.21Ω
Pulsed drain current: 172A
Power dissipation: 780W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 33A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 0.21Ω
Pulsed drain current: 172A
Power dissipation: 780W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM100DAM90G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Case: SP6C
Pulsed drain current: 312A
Power dissipation: 1.25kW
On-state resistance: 0.105Ω
Drain current: 59A
Drain-source voltage: 1kV
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Case: SP6C
Pulsed drain current: 312A
Power dissipation: 1.25kW
On-state resistance: 0.105Ω
Drain current: 59A
Drain-source voltage: 1kV
товар відсутній
| APTM100DAM90G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Case: SP6C
Pulsed drain current: 312A
Power dissipation: 1.25kW
On-state resistance: 0.105Ω
Drain current: 59A
Drain-source voltage: 1kV
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Case: SP6C
Pulsed drain current: 312A
Power dissipation: 1.25kW
On-state resistance: 0.105Ω
Drain current: 59A
Drain-source voltage: 1kV
кількість в упаковці: 1 шт
товар відсутній
| APTM100DSK35T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A
Technology: POWER MOS 7®
Semiconductor structure: diode/transistor
Case: SP3
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 88A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A
Technology: POWER MOS 7®
Semiconductor structure: diode/transistor
Case: SP3
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 88A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
товар відсутній
| APTM100DSK35T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A
Technology: POWER MOS 7®
Semiconductor structure: diode/transistor
Case: SP3
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 88A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A
Technology: POWER MOS 7®
Semiconductor structure: diode/transistor
Case: SP3
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 88A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
кількість в упаковці: 1 шт
товар відсутній
| APTM100H18FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Drain current: 33A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 0.21Ω
Topology: H-bridge
Pulsed drain current: 172A
Power dissipation: 780W
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Drain current: 33A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 0.21Ω
Topology: H-bridge
Pulsed drain current: 172A
Power dissipation: 780W
товар відсутній
| APTM100H18FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Drain current: 33A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 0.21Ω
Topology: H-bridge
Pulsed drain current: 172A
Power dissipation: 780W
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Drain current: 33A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 0.21Ω
Topology: H-bridge
Pulsed drain current: 172A
Power dissipation: 780W
кількість в упаковці: 1 шт
товар відсутній
| APTM100H35FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
товар відсутній
| APTM100H35FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
кількість в упаковці: 1 шт
товар відсутній
| APTM100H35FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP4
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP4
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
товар відсутній
| APTM100H35FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP4
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP4
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
кількість в упаковці: 1 шт
товар відсутній
| APTM100H45FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.54Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 72A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.54Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 72A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
товар відсутній
| APTM100H45FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.54Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 72A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.54Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 72A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
кількість в упаковці: 1 шт
товар відсутній
| APTM100H45SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of module: MOSFET transistor
Case: SP4
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 72A
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of module: MOSFET transistor
Case: SP4
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 72A
товар відсутній
| APTM100H45SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of module: MOSFET transistor
Case: SP4
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 72A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of module: MOSFET transistor
Case: SP4
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 72A
кількість в упаковці: 1 шт
товар відсутній
| APTM100H45STG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 0.54Ω
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Pulsed drain current: 72A
Power dissipation: 357W
Technology: POWER MOS 7®
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 0.54Ω
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Pulsed drain current: 72A
Power dissipation: 357W
Technology: POWER MOS 7®
товар відсутній
| APTM100H45STG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 0.54Ω
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Pulsed drain current: 72A
Power dissipation: 357W
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 0.54Ω
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Pulsed drain current: 72A
Power dissipation: 357W
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
товар відсутній
| APTM100H46FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 552mΩ
Topology: H-bridge; NTC thermistor
Pulsed drain current: 120A
Power dissipation: 357W
Technology: POWER MOS 8®
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 552mΩ
Topology: H-bridge; NTC thermistor
Pulsed drain current: 120A
Power dissipation: 357W
Technology: POWER MOS 8®
товар відсутній
| APTM100H46FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 552mΩ
Topology: H-bridge; NTC thermistor
Pulsed drain current: 120A
Power dissipation: 357W
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 552mΩ
Topology: H-bridge; NTC thermistor
Pulsed drain current: 120A
Power dissipation: 357W
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
товар відсутній
| APTM100SK33T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A
Technology: POWER MOS 8®
Semiconductor structure: diode/transistor
Case: SP1
Power dissipation: 390W
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 396mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A
Technology: POWER MOS 8®
Semiconductor structure: diode/transistor
Case: SP1
Power dissipation: 390W
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 396mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товар відсутній
| APTM100SK33T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A
Technology: POWER MOS 8®
Semiconductor structure: diode/transistor
Case: SP1
Power dissipation: 390W
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 396mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A
Technology: POWER MOS 8®
Semiconductor structure: diode/transistor
Case: SP1
Power dissipation: 390W
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 396mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM100TA35FPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 88A
On-state resistance: 0.42Ω
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 88A
On-state resistance: 0.42Ω
товар відсутній
| APTM100TA35FPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 88A
On-state resistance: 0.42Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 88A
On-state resistance: 0.42Ω
кількість в упаковці: 1 шт
товар відсутній
| APTM100TA35SCTPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: NTC thermistor
Pulsed drain current: 88A
On-state resistance: 0.42Ω
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: NTC thermistor
Pulsed drain current: 88A
On-state resistance: 0.42Ω
товар відсутній
| APTM100TA35SCTPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: NTC thermistor
Pulsed drain current: 88A
On-state resistance: 0.42Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: NTC thermistor
Pulsed drain current: 88A
On-state resistance: 0.42Ω
кількість в упаковці: 1 шт
товар відсутній
| APTM100UM45DAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 160A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 52mΩ
Topology: single transistor + series diode
Pulsed drain current: 860A
Power dissipation: 5kW
Technology: POWER MOS 7®
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 160A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 52mΩ
Topology: single transistor + series diode
Pulsed drain current: 860A
Power dissipation: 5kW
Technology: POWER MOS 7®
товар відсутній
| APTM100UM45DAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 160A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 52mΩ
Topology: single transistor + series diode
Pulsed drain current: 860A
Power dissipation: 5kW
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 160A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 52mΩ
Topology: single transistor + series diode
Pulsed drain current: 860A
Power dissipation: 5kW
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
товар відсутній
| APTM100UM45FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Technology: POWER MOS 7®
Case: SP6C
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 860A
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Technology: POWER MOS 7®
Case: SP6C
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 860A
Semiconductor structure: single transistor
товар відсутній
| APTM100UM45FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Technology: POWER MOS 7®
Case: SP6C
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 860A
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Technology: POWER MOS 7®
Case: SP6C
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 860A
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
товар відсутній
| APTM100UM60FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw
Technology: POWER MOS 7®
Case: SP6C
Drain-source voltage: 1kV
Drain current: 97A
On-state resistance: 70mΩ
Power dissipation: 2272W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 516A
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw
Technology: POWER MOS 7®
Case: SP6C
Drain-source voltage: 1kV
Drain current: 97A
On-state resistance: 70mΩ
Power dissipation: 2272W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 516A
Semiconductor structure: single transistor
товар відсутній
| APTM100UM60FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw
Technology: POWER MOS 7®
Case: SP6C
Drain-source voltage: 1kV
Drain current: 97A
On-state resistance: 70mΩ
Power dissipation: 2272W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 516A
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw
Technology: POWER MOS 7®
Case: SP6C
Drain-source voltage: 1kV
Drain current: 97A
On-state resistance: 70mΩ
Power dissipation: 2272W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 516A
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
товар відсутній
| APTM100UM65DAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 110A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 78mΩ
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 110A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 78mΩ
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM100UM65DAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 110A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 78mΩ
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 110A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 78mΩ
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM100UM65SAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 110A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 78mΩ
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 110A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 78mΩ
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®
товар відсутній
| APTM100UM65SAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 110A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 78mΩ
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 110A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 78mΩ
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
товар відсутній
| APTM100UM65SCAVG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Case: SP6
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Case: SP6
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
товар відсутній
| APTM100UM65SCAVG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Case: SP6
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Case: SP6
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
кількість в упаковці: 1 шт
товар відсутній
| APTM10AM02FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1900A
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1900A
Case: SP6C
товар відсутній
| APTM10AM02FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM10AM05FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 207A
Pulsed drain current: 1100A
Power dissipation: 780W
Case: SP4
Gate-source voltage: ±30V
On-state resistance: 5mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Topology: MOSFET half-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 207A
Pulsed drain current: 1100A
Power dissipation: 780W
Case: SP4
Gate-source voltage: ±30V
On-state resistance: 5mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Topology: MOSFET half-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APTM10AM05FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 207A
Pulsed drain current: 1100A
Power dissipation: 780W
Case: SP4
Gate-source voltage: ±30V
On-state resistance: 5mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Topology: MOSFET half-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 207A
Pulsed drain current: 1100A
Power dissipation: 780W
Case: SP4
Gate-source voltage: ±30V
On-state resistance: 5mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Topology: MOSFET half-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APTM10DAM02G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
товар відсутній
| APTM10DAM02G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM10DAM05TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Electrical mounting: FASTON connectors; screw
Case: SP4
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Drain current: 207A
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 1100A
Type of module: MOSFET transistor
On-state resistance: 5mΩ
Power dissipation: 780W
Drain-source voltage: 100V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Electrical mounting: FASTON connectors; screw
Case: SP4
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Drain current: 207A
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 1100A
Type of module: MOSFET transistor
On-state resistance: 5mΩ
Power dissipation: 780W
Drain-source voltage: 100V
товар відсутній
| APTM10DAM05TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Electrical mounting: FASTON connectors; screw
Case: SP4
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Drain current: 207A
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 1100A
Type of module: MOSFET transistor
On-state resistance: 5mΩ
Power dissipation: 780W
Drain-source voltage: 100V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Electrical mounting: FASTON connectors; screw
Case: SP4
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Drain current: 207A
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 1100A
Type of module: MOSFET transistor
On-state resistance: 5mΩ
Power dissipation: 780W
Drain-source voltage: 100V
кількість в упаковці: 1 шт
товар відсутній
| APTM10DSKM09T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Electrical mounting: Press-in PCB
Case: SP3
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Drain current: 100A
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 430A
Type of module: MOSFET transistor
On-state resistance: 10mΩ
Power dissipation: 390W
Drain-source voltage: 100V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Electrical mounting: Press-in PCB
Case: SP3
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Drain current: 100A
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 430A
Type of module: MOSFET transistor
On-state resistance: 10mΩ
Power dissipation: 390W
Drain-source voltage: 100V
товар відсутній
| APTM10DSKM09T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Electrical mounting: Press-in PCB
Case: SP3
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Drain current: 100A
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 430A
Type of module: MOSFET transistor
On-state resistance: 10mΩ
Power dissipation: 390W
Drain-source voltage: 100V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Electrical mounting: Press-in PCB
Case: SP3
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Drain current: 100A
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 430A
Type of module: MOSFET transistor
On-state resistance: 10mΩ
Power dissipation: 390W
Drain-source voltage: 100V
кількість в упаковці: 1 шт
товар відсутній
| APTM10DSKM19T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper x2; NTC thermistor
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 208W
Technology: POWER MOS 5®
Mechanical mounting: screw
Pulsed drain current: 300A
Drain current: 50A
Gate-source voltage: ±30V
Drain-source voltage: 100V
On-state resistance: 21mΩ
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper x2; NTC thermistor
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 208W
Technology: POWER MOS 5®
Mechanical mounting: screw
Pulsed drain current: 300A
Drain current: 50A
Gate-source voltage: ±30V
Drain-source voltage: 100V
On-state resistance: 21mΩ
товар відсутній
| APTM10DSKM19T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper x2; NTC thermistor
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 208W
Technology: POWER MOS 5®
Mechanical mounting: screw
Pulsed drain current: 300A
Drain current: 50A
Gate-source voltage: ±30V
Drain-source voltage: 100V
On-state resistance: 21mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper x2; NTC thermistor
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 208W
Technology: POWER MOS 5®
Mechanical mounting: screw
Pulsed drain current: 300A
Drain current: 50A
Gate-source voltage: ±30V
Drain-source voltage: 100V
On-state resistance: 21mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTM10DUM02G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
товар відсутній
| APTM10DUM02G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM10HM09FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 430A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Power dissipation: 390W
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 430A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Power dissipation: 390W
товар відсутній
| APTM10HM09FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 430A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Power dissipation: 390W
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 430A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Power dissipation: 390W
кількість в упаковці: 1 шт
товар відсутній
| APTM10HM19FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній