Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4031) > Сторінка 60 з 68
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MSC080SMA120B4 | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W Power dissipation: 200W Mounting: THT Case: TO247-4 Features of semiconductor devices: Kelvin terminal Gate charge: 64nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 90A Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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MSC080SMA120B4 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W Power dissipation: 200W Mounting: THT Case: TO247-4 Features of semiconductor devices: Kelvin terminal Gate charge: 64nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 90A Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 35 шт: термін постачання 7-14 дні (днів) |
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MSC080SMA120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A Power dissipation: 200W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Pulsed drain current: 91A Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 0.1Ω |
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MSC080SMA120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A Power dissipation: 200W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Pulsed drain current: 91A Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 0.1Ω кількість в упаковці: 1 шт |
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MSC080SMA120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 87A Power dissipation: 182W Case: D3PAK On-state resistance: 0.1Ω Mounting: SMD Gate charge: 64nC Kind of channel: enhanced |
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MSC080SMA120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 87A Power dissipation: 182W Case: D3PAK On-state resistance: 0.1Ω Mounting: SMD Gate charge: 64nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| MSC080SMA330B4 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W Mounting: THT Drain current: 26A On-state resistance: 105mΩ Gate charge: 55nC Case: TO247-4 Features of semiconductor devices: Kelvin terminal Polarisation: unipolar Kind of channel: enhanced Technology: SiC Power dissipation: 381W Pulsed drain current: 100A Type of transistor: N-MOSFET Drain-source voltage: 3.3kV |
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| MSC080SMA330B4 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W Mounting: THT Drain current: 26A On-state resistance: 105mΩ Gate charge: 55nC Case: TO247-4 Features of semiconductor devices: Kelvin terminal Polarisation: unipolar Kind of channel: enhanced Technology: SiC Power dissipation: 381W Pulsed drain current: 100A Type of transistor: N-MOSFET Drain-source voltage: 3.3kV |
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| MSC090SDA330B2 | MICROCHIP (MICROSEMI) | MSC090SDA330B2 THT Schottky diodes |
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MSC090SMA070B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 20A Pulsed drain current: 69A Power dissipation: 90W Case: TO247-3 On-state resistance: 108mΩ Mounting: THT Gate charge: 38nC Kind of channel: enhanced |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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MSC090SMA070B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 20A Pulsed drain current: 69A Power dissipation: 90W Case: TO247-3 On-state resistance: 108mΩ Mounting: THT Gate charge: 38nC Kind of channel: enhanced |
на замовлення 63 шт: термін постачання 7-14 дні (днів) |
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MSC090SMA070S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 18A Pulsed drain current: 65A Power dissipation: 91W Case: D3PAK On-state resistance: 0.115Ω Mounting: SMD Gate charge: 38nC Kind of channel: enhanced |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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MSC090SMA070S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 18A Pulsed drain current: 65A Power dissipation: 91W Case: D3PAK On-state resistance: 0.115Ω Mounting: SMD Gate charge: 38nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 60 шт: термін постачання 7-14 дні (днів) |
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| MSC100SM70JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 250A Case: SOT227B |
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| MSC100SM70JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 250A Case: SOT227B кількість в упаковці: 1 шт |
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| MSC100SM70JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: buck chopper Pulsed drain current: 250A Case: SOT227B |
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| MSC100SM70JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: buck chopper Pulsed drain current: 250A Case: SOT227B кількість в упаковці: 1 шт |
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| MSC130SM120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 350A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W |
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| MSC130SM120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 350A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W кількість в упаковці: 1 шт |
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| MSC130SM120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: buck chopper Pulsed drain current: 350A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W |
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| MSC130SM120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: buck chopper Pulsed drain current: 350A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W кількість в упаковці: 1 шт |
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MSC180SMA120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 40A Power dissipation: 127W Case: TO247-3 On-state resistance: 0.225Ω Mounting: THT Gate charge: 34nC Kind of channel: enhanced |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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MSC180SMA120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 40A Power dissipation: 127W Case: TO247-3 On-state resistance: 0.225Ω Mounting: THT Gate charge: 34nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 7-14 дні (днів) |
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MSC180SMA120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 40A Power dissipation: 125W Case: D3PAK On-state resistance: 0.225Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhanced |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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MSC180SMA120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 40A Power dissipation: 125W Case: D3PAK On-state resistance: 0.225Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 7-14 дні (днів) |
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| MSC2X100SDA070J | MICROCHIP (MICROSEMI) |
MSC2X100SDA070J Diode modules |
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| MSC2X100SDA120J | MICROCHIP (MICROSEMI) |
MSC2X100SDA120J Diode modules |
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| MSC2X101SDA070J | MICROCHIP (MICROSEMI) |
MSC2X101SDA070J Diode modules |
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| MSC2X101SDA120J | MICROCHIP (MICROSEMI) |
MSC2X101SDA120J Diode modules |
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| MSC2X30SDA070J | MICROCHIP (MICROSEMI) | MSC2X30SDA070J Diode modules |
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| MSC2X30SDA120J | MICROCHIP (MICROSEMI) | MSC2X30SDA120J Diode modules |
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| MSC2X30SDA170J | MICROCHIP (MICROSEMI) | MSC2X30SDA170J Diode modules |
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| MSC2X31SDA070J | MICROCHIP (MICROSEMI) | MSC2X31SDA070J Diode modules |
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| MSC2X31SDA120J | MICROCHIP (MICROSEMI) | MSC2X31SDA120J Diode modules |
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| MSC2X31SDA170J | MICROCHIP (MICROSEMI) | MSC2X31SDA170J Diode modules |
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| MSC2X50SDA070J | MICROCHIP (MICROSEMI) |
MSC2X50SDA070J Diode modules |
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| MSC2X50SDA120J | MICROCHIP (MICROSEMI) |
MSC2X50SDA120J Diode modules |
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| MSC2X50SDA170J | MICROCHIP (MICROSEMI) | MSC2X50SDA170J Diode modules |
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| MSC2X51SDA070J | MICROCHIP (MICROSEMI) |
MSC2X51SDA070J Diode modules |
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| MSC2X51SDA120J | MICROCHIP (MICROSEMI) |
MSC2X51SDA120J Diode modules |
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| MSC2X51SDA170J | MICROCHIP (MICROSEMI) | MSC2X51SDA170J Diode modules |
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MSC360SMA120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 28A Power dissipation: 78W Case: TO247-3 On-state resistance: 0.45Ω Mounting: THT Gate charge: 21nC Kind of channel: enhanced |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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MSC360SMA120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 28A Power dissipation: 78W Case: TO247-3 On-state resistance: 0.45Ω Mounting: THT Gate charge: 21nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 63 шт: термін постачання 7-14 дні (днів) |
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MSC360SMA120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 27A Power dissipation: 71W Case: D3PAK On-state resistance: 0.45Ω Mounting: SMD Gate charge: 21nC Kind of channel: enhanced |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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MSC360SMA120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 27A Power dissipation: 71W Case: D3PAK On-state resistance: 0.45Ω Mounting: SMD Gate charge: 21nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 70 шт: термін постачання 7-14 дні (днів) |
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| MSC400SMA330B4 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W Case: TO247-4 Drain-source voltage: 3.3kV Drain current: 7A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 131W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 37nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 27A Mounting: THT |
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| MSC400SMA330B4 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W Case: TO247-4 Drain-source voltage: 3.3kV Drain current: 7A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 131W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 37nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 27A Mounting: THT кількість в упаковці: 1 шт |
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| MSC40SM120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: boost chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
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| MSC40SM120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: boost chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
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| MSC40SM120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: buck chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
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| MSC40SM120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: buck chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
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| MSC50DC120HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2.1V |
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| MSC50DC120HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2.1V кількість в упаковці: 1 шт |
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| MSC50DC170HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.7kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2V |
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| MSC50DC170HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.7kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2V кількість в упаковці: 1 шт |
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| MSC50DC70HJ | MICROCHIP (MICROSEMI) |
MSC50DC70HJ Sing. ph. diode bridge rectif. - others |
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| MSC70SM120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw |
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| MSC70SM120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
||||||||||
| MSC70SM120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: buck chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
||||||||||
| MSC70SM120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: buck chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
| MSC080SMA120B4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Power dissipation: 200W
Mounting: THT
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 90A
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Power dissipation: 200W
Mounting: THT
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 90A
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 864.39 грн |
| 3+ | 759.05 грн |
| MSC080SMA120B4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Power dissipation: 200W
Mounting: THT
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 90A
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Power dissipation: 200W
Mounting: THT
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 90A
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 35 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1037.26 грн |
| 3+ | 945.9 грн |
| MSC080SMA120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Power dissipation: 200W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Power dissipation: 200W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
товар відсутній
| MSC080SMA120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Power dissipation: 200W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Power dissipation: 200W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
кількість в упаковці: 1 шт
товар відсутній
| MSC080SMA120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 87A
Power dissipation: 182W
Case: D3PAK
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 87A
Power dissipation: 182W
Case: D3PAK
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhanced
товар відсутній
| MSC080SMA120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 87A
Power dissipation: 182W
Case: D3PAK
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 87A
Power dissipation: 182W
Case: D3PAK
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| MSC080SMA330B4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Mounting: THT
Drain current: 26A
On-state resistance: 105mΩ
Gate charge: 55nC
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
Kind of channel: enhanced
Technology: SiC
Power dissipation: 381W
Pulsed drain current: 100A
Type of transistor: N-MOSFET
Drain-source voltage: 3.3kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Mounting: THT
Drain current: 26A
On-state resistance: 105mΩ
Gate charge: 55nC
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
Kind of channel: enhanced
Technology: SiC
Power dissipation: 381W
Pulsed drain current: 100A
Type of transistor: N-MOSFET
Drain-source voltage: 3.3kV
товар відсутній
| MSC080SMA330B4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Mounting: THT
Drain current: 26A
On-state resistance: 105mΩ
Gate charge: 55nC
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
Kind of channel: enhanced
Technology: SiC
Power dissipation: 381W
Pulsed drain current: 100A
Type of transistor: N-MOSFET
Drain-source voltage: 3.3kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Mounting: THT
Drain current: 26A
On-state resistance: 105mΩ
Gate charge: 55nC
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
Kind of channel: enhanced
Technology: SiC
Power dissipation: 381W
Pulsed drain current: 100A
Type of transistor: N-MOSFET
Drain-source voltage: 3.3kV
товар відсутній
| MSC090SMA070B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
на замовлення 63 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 560.36 грн |
| 2+ | 428.31 грн |
| 5+ | 404.78 грн |
| MSC090SMA070B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
на замовлення 63 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 672.43 грн |
| 2+ | 533.74 грн |
| 5+ | 485.74 грн |
| MSC090SMA070S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 18A
Pulsed drain current: 65A
Power dissipation: 91W
Case: D3PAK
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 38nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 18A
Pulsed drain current: 65A
Power dissipation: 91W
Case: D3PAK
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 38nC
Kind of channel: enhanced
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 785.4 грн |
| 2+ | 478.82 грн |
| 3+ | 478.13 грн |
| 5+ | 452.53 грн |
| MSC090SMA070S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 18A
Pulsed drain current: 65A
Power dissipation: 91W
Case: D3PAK
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 38nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 18A
Pulsed drain current: 65A
Power dissipation: 91W
Case: D3PAK
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 38nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 60 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 942.48 грн |
| 2+ | 596.68 грн |
| 3+ | 573.75 грн |
| 5+ | 543.03 грн |
| MSC100SM70JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 250A
Case: SOT227B
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 250A
Case: SOT227B
товар відсутній
| MSC100SM70JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 250A
Case: SOT227B
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 250A
Case: SOT227B
кількість в упаковці: 1 шт
товар відсутній
| MSC100SM70JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 250A
Case: SOT227B
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 250A
Case: SOT227B
товар відсутній
| MSC100SM70JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 250A
Case: SOT227B
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 250A
Case: SOT227B
кількість в упаковці: 1 шт
товар відсутній
| MSC130SM120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 350A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 350A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
товар відсутній
| MSC130SM120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 350A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 350A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
кількість в упаковці: 1 шт
товар відсутній
| MSC130SM120JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 350A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 350A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
товар відсутній
| MSC130SM120JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 350A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 350A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
кількість в упаковці: 1 шт
товар відсутній
| MSC180SMA120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 127W
Case: TO247-3
On-state resistance: 0.225Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 127W
Case: TO247-3
On-state resistance: 0.225Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 803.28 грн |
| 2+ | 487.12 грн |
| 5+ | 460.83 грн |
| MSC180SMA120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 127W
Case: TO247-3
On-state resistance: 0.225Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 127W
Case: TO247-3
On-state resistance: 0.225Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 963.94 грн |
| 2+ | 607.03 грн |
| 5+ | 552.99 грн |
| MSC180SMA120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D3PAK
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D3PAK
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 885.25 грн |
| 2+ | 539.02 грн |
| 5+ | 509.96 грн |
| MSC180SMA120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D3PAK
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D3PAK
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1062.3 грн |
| 2+ | 671.7 грн |
| 5+ | 611.95 грн |
| MSC360SMA120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 78W
Case: TO247-3
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 21nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 78W
Case: TO247-3
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 21nC
Kind of channel: enhanced
на замовлення 63 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 577.5 грн |
| 3+ | 371.57 грн |
| 6+ | 351.5 грн |
| MSC360SMA120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 78W
Case: TO247-3
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 21nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 78W
Case: TO247-3
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 21nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 63 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 693 грн |
| 3+ | 463.03 грн |
| 6+ | 421.8 грн |
| MSC360SMA120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 27A
Power dissipation: 71W
Case: D3PAK
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 27A
Power dissipation: 71W
Case: D3PAK
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhanced
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 552.16 грн |
| 2+ | 474.67 грн |
| 5+ | 449.07 грн |
| 25+ | 438 грн |
| MSC360SMA120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 27A
Power dissipation: 71W
Case: D3PAK
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 27A
Power dissipation: 71W
Case: D3PAK
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 662.6 грн |
| 2+ | 591.51 грн |
| 5+ | 538.88 грн |
| 25+ | 525.59 грн |
| MSC400SMA330B4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
товар відсутній
| MSC400SMA330B4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
| MSC40SM120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
товар відсутній
| MSC40SM120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
товар відсутній
| MSC40SM120JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
товар відсутній
| MSC40SM120JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
товар відсутній
| MSC50DC120HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
товар відсутній
| MSC50DC120HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
товар відсутній
| MSC50DC170HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
товар відсутній
| MSC50DC170HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
кількість в упаковці: 1 шт
товар відсутній
| MSC50DC70HJ |
|
Виробник: MICROCHIP (MICROSEMI)
MSC50DC70HJ Sing. ph. diode bridge rectif. - others
MSC50DC70HJ Sing. ph. diode bridge rectif. - others
товар відсутній
| MSC70SM120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MSC70SM120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MSC70SM120JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MSC70SM120JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній