Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4031) > Сторінка 30 з 68
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APT25GN120SG | MICROCHIP (MICROSEMI) |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 1200V; 33A; 272W; D3PAK Case: D3PAK Power dissipation: 272W Gate charge: 155nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 75A |
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APT25GN120SG | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK Case: D3PAK Power dissipation: 272W Gate charge: 155nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 75A кількість в упаковці: 1 шт |
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APT25GP120BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 200ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A |
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APT25GP120BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 200ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A кількість в упаковці: 1 шт |
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APT25GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 197ns Gate-emitter voltage: ±20V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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APT25GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 197ns Gate-emitter voltage: ±20V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A кількість в упаковці: 1 шт |
на замовлення 41 шт: термін постачання 7-14 дні (днів) |
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APT25GP90BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 36A Type of transistor: IGBT Turn-on time: 29ns Turn-off time: 190ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 900V Pulsed collector current: 110A |
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APT25GP90BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 36A Type of transistor: IGBT Turn-on time: 29ns Turn-off time: 190ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 900V Pulsed collector current: 110A кількість в упаковці: 1 шт |
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APT25GP90BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Collector current: 36A Type of transistor: IGBT Turn-on time: 29ns Turn-off time: 190ns Gate-emitter voltage: ±20V Mounting: THT Collector-emitter voltage: 900V Pulsed collector current: 110A |
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APT25GP90BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Collector current: 36A Type of transistor: IGBT Turn-on time: 29ns Turn-off time: 190ns Gate-emitter voltage: ±20V Mounting: THT Collector-emitter voltage: 900V Pulsed collector current: 110A кількість в упаковці: 1 шт |
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APT25GR120B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Mounting: THT Power dissipation: 521W Kind of package: tube Gate charge: 154nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 100A Turn-on time: 26ns Turn-off time: 164ns Type of transistor: IGBT |
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APT25GR120B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Mounting: THT Power dissipation: 521W Kind of package: tube Gate charge: 154nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 100A Turn-on time: 26ns Turn-off time: 164ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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APT25GR120BD15 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Mounting: THT Power dissipation: 521W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 154nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 100A Turn-on time: 26ns Turn-off time: 164ns Type of transistor: IGBT |
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APT25GR120BD15 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Mounting: THT Power dissipation: 521W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 154nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 100A Turn-on time: 26ns Turn-off time: 164ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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APT25GR120S | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK Mounting: SMD Power dissipation: 521W Kind of package: tube Gate charge: 154nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: D3PAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 100A Turn-on time: 26ns Turn-off time: 164ns Type of transistor: IGBT |
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APT25GR120S | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK Mounting: SMD Power dissipation: 521W Kind of package: tube Gate charge: 154nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: D3PAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 100A Turn-on time: 26ns Turn-off time: 164ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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APT25GR120SD15 | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK Mounting: SMD Power dissipation: 521W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 154nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: D3PAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 100A Turn-on time: 26ns Turn-off time: 164ns Type of transistor: IGBT |
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APT25GR120SD15 | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK Mounting: SMD Power dissipation: 521W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 154nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: D3PAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 100A Turn-on time: 26ns Turn-off time: 164ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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APT25GT120BRDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3 Type of transistor: IGBT Technology: Thunderblot IGBT® Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 347W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 41ns Turn-off time: 0.22µs |
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APT25GT120BRDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3 Type of transistor: IGBT Technology: Thunderblot IGBT® Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 347W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 41ns Turn-off time: 0.22µs кількість в упаковці: 1 шт |
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APT25GT120BRG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3 Type of transistor: IGBT Technology: Thunderblot IGBT® Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 347W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 41ns Turn-off time: 0.22µs |
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APT25GT120BRG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3 Type of transistor: IGBT Technology: Thunderblot IGBT® Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 347W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 41ns Turn-off time: 0.22µs кількість в упаковці: 1 шт |
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| APT25M100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 16A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 140A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
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| APT25M100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 16A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 140A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT26F120B2 | MICROCHIP (MICROSEMI) |
APT26F120B2 THT N channel transistors |
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APT26F120L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264 Mounting: THT Pulsed drain current: 105A Power dissipation: 1135W Gate charge: 300nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 16A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: TO264 On-state resistance: 0.58Ω Gate-source voltage: ±30V |
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APT26F120L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264 Mounting: THT Pulsed drain current: 105A Power dissipation: 1135W Gate charge: 300nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 16A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: TO264 On-state resistance: 0.58Ω Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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| APT26M100JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W Pulsed drain current: 140A Power dissipation: 543W Polarisation: unipolar Technology: POWER MOS 8® Drain current: 20A Drain-source voltage: 1kV Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: ISOTOP On-state resistance: 396mΩ Gate-source voltage: ±30V Topology: boost chopper |
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| APT26M100JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W Pulsed drain current: 140A Power dissipation: 543W Polarisation: unipolar Technology: POWER MOS 8® Drain current: 20A Drain-source voltage: 1kV Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: ISOTOP On-state resistance: 396mΩ Gate-source voltage: ±30V Topology: boost chopper кількість в упаковці: 1 шт |
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| APT26M100JCU3 | MICROCHIP (MICROSEMI) |
APT26M100JCU3 Transistor modules MOSFET |
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| APT27GA90BD15 | MICROCHIP (MICROSEMI) |
APT27GA90BD15 THT IGBT transistors |
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| APT28M120B2 | MICROCHIP (MICROSEMI) |
APT28M120B2 THT N channel transistors |
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| APT28M120L | MICROCHIP (MICROSEMI) |
APT28M120L THT N channel transistors |
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| APT29F100B2 | MICROCHIP (MICROSEMI) |
APT29F100B2 THT N channel transistors |
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APT29F100L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264 Mounting: THT Case: TO264 On-state resistance: 440mΩ Pulsed drain current: 120A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 19A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±30V |
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APT29F100L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264 Mounting: THT Case: TO264 On-state resistance: 440mΩ Pulsed drain current: 120A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 19A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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| APT29F80J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 173A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 19A On-state resistance: 0.21Ω Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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| APT29F80J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 173A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 19A On-state resistance: 0.21Ω Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT2X100D100J | MICROCHIP (MICROSEMI) |
APT2X100D100J Diode modules |
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| APT2X100D120J | MICROCHIP (MICROSEMI) |
APT2X100D120J Diode modules |
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APT2X100D20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 100A; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 100A Case: SOT227B Max. forward voltage: 1V Max. forward impulse current: 1kA Electrical mounting: screw Max. load current: 171A Mechanical mounting: screw Technology: FRED |
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APT2X100D20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 100A; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 100A Case: SOT227B Max. forward voltage: 1V Max. forward impulse current: 1kA Electrical mounting: screw Max. load current: 171A Mechanical mounting: screw Technology: FRED кількість в упаковці: 1 шт |
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APT2X100D40J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED Technology: FRED Case: SOT227B Semiconductor structure: double independent Max. off-state voltage: 400V Electrical mounting: screw Mechanical mounting: screw Type of module: diode Load current: 100A |
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APT2X100D40J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED Technology: FRED Case: SOT227B Semiconductor structure: double independent Max. off-state voltage: 400V Electrical mounting: screw Mechanical mounting: screw Type of module: diode Load current: 100A |
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| APT2X100D60J | MICROCHIP (MICROSEMI) |
APT2X100D60J Diode modules |
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APT2X100DQ100J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw Case: SOT227B Technology: FRED Max. off-state voltage: 1kV Load current: 100A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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APT2X100DQ100J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw Case: SOT227B Technology: FRED Max. off-state voltage: 1kV Load current: 100A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode кількість в упаковці: 1 шт |
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| APT2X100DQ120J | MICROCHIP (MICROSEMI) |
APT2X100DQ120J Diode modules |
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| APT2X100DQ60J | MICROCHIP (MICROSEMI) |
APT2X100DQ60J Diode modules |
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| APT2X101D100J | MICROCHIP (MICROSEMI) |
APT2X101D100J Diode modules |
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| APT2X101D120J | MICROCHIP (MICROSEMI) |
APT2X101D120J Diode modules |
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APT2X101D20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; 100A; SOT227B; screw; FRED Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 100A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: FRED |
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APT2X101D20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; 100A; SOT227B; screw; FRED Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 100A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: FRED кількість в упаковці: 1 шт |
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APT2X101D30J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 100A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: FRED |
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APT2X101D30J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 100A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: FRED кількість в упаковці: 1 шт |
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APT2X101D40J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED Technology: FRED Case: SOT227B Semiconductor structure: double independent Max. off-state voltage: 400V Electrical mounting: screw Mechanical mounting: screw Type of module: diode Load current: 100A |
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APT2X101D40J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED Technology: FRED Case: SOT227B Semiconductor structure: double independent Max. off-state voltage: 400V Electrical mounting: screw Mechanical mounting: screw Type of module: diode Load current: 100A |
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| APT2X101D60J | MICROCHIP (MICROSEMI) |
APT2X101D60J Diode modules |
товар відсутній |
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APT2X101DQ100J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw Case: SOT227B Technology: FRED Max. off-state voltage: 1kV Load current: 100A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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APT2X101DQ100J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw Case: SOT227B Technology: FRED Max. off-state voltage: 1kV Load current: 100A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 7-14 дні (днів) |
|
| APT25GN120SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK
Case: D3PAK
Power dissipation: 272W
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK
Case: D3PAK
Power dissipation: 272W
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
товар відсутній
| APT25GN120SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK
Case: D3PAK
Power dissipation: 272W
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK
Case: D3PAK
Power dissipation: 272W
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
кількість в упаковці: 1 шт
товар відсутній
| APT25GP120BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 200ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 200ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
товар відсутній
| APT25GP120BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 200ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 200ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
кількість в упаковці: 1 шт
товар відсутній
| APT25GP120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 944.12 грн |
| 3+ | 828.94 грн |
| APT25GP120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1132.94 грн |
| 3+ | 1032.99 грн |
| APT25GP90BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
товар відсутній
| APT25GP90BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
кількість в упаковці: 1 шт
товар відсутній
| APT25GP90BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
товар відсутній
| APT25GP90BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
кількість в упаковці: 1 шт
товар відсутній
| APT25GR120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Mounting: THT
Power dissipation: 521W
Kind of package: tube
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Mounting: THT
Power dissipation: 521W
Kind of package: tube
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
товар відсутній
| APT25GR120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Mounting: THT
Power dissipation: 521W
Kind of package: tube
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Mounting: THT
Power dissipation: 521W
Kind of package: tube
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT25GR120BD15 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Mounting: THT
Power dissipation: 521W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Mounting: THT
Power dissipation: 521W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
товар відсутній
| APT25GR120BD15 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Mounting: THT
Power dissipation: 521W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Mounting: THT
Power dissipation: 521W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT25GR120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Mounting: SMD
Power dissipation: 521W
Kind of package: tube
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Mounting: SMD
Power dissipation: 521W
Kind of package: tube
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
товар відсутній
| APT25GR120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Mounting: SMD
Power dissipation: 521W
Kind of package: tube
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Mounting: SMD
Power dissipation: 521W
Kind of package: tube
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT25GR120SD15 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Mounting: SMD
Power dissipation: 521W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Mounting: SMD
Power dissipation: 521W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
товар відсутній
| APT25GR120SD15 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Mounting: SMD
Power dissipation: 521W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Mounting: SMD
Power dissipation: 521W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 26ns
Turn-off time: 164ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT25GT120BRDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
товар відсутній
| APT25GT120BRDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
| APT25GT120BRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
товар відсутній
| APT25GT120BRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
| APT25M100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 16A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 140A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 16A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 140A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APT25M100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 16A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 140A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 16A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 140A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT26F120L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264
Mounting: THT
Pulsed drain current: 105A
Power dissipation: 1135W
Gate charge: 300nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: TO264
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264
Mounting: THT
Pulsed drain current: 105A
Power dissipation: 1135W
Gate charge: 300nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: TO264
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
товар відсутній
| APT26F120L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264
Mounting: THT
Pulsed drain current: 105A
Power dissipation: 1135W
Gate charge: 300nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: TO264
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264
Mounting: THT
Pulsed drain current: 105A
Power dissipation: 1135W
Gate charge: 300nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: TO264
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT26M100JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W
Pulsed drain current: 140A
Power dissipation: 543W
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 20A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: ISOTOP
On-state resistance: 396mΩ
Gate-source voltage: ±30V
Topology: boost chopper
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W
Pulsed drain current: 140A
Power dissipation: 543W
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 20A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: ISOTOP
On-state resistance: 396mΩ
Gate-source voltage: ±30V
Topology: boost chopper
товар відсутній
| APT26M100JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W
Pulsed drain current: 140A
Power dissipation: 543W
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 20A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: ISOTOP
On-state resistance: 396mΩ
Gate-source voltage: ±30V
Topology: boost chopper
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W
Pulsed drain current: 140A
Power dissipation: 543W
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 20A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: ISOTOP
On-state resistance: 396mΩ
Gate-source voltage: ±30V
Topology: boost chopper
кількість в упаковці: 1 шт
товар відсутній
| APT26M100JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
APT26M100JCU3 Transistor modules MOSFET
APT26M100JCU3 Transistor modules MOSFET
товар відсутній
| APT29F100L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264
Mounting: THT
Case: TO264
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 19A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264
Mounting: THT
Case: TO264
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 19A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
товар відсутній
| APT29F100L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264
Mounting: THT
Case: TO264
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 19A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264
Mounting: THT
Case: TO264
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 19A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT29F80J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 19A
On-state resistance: 0.21Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 19A
On-state resistance: 0.21Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
товар відсутній
| APT29F80J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 19A
On-state resistance: 0.21Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 19A
On-state resistance: 0.21Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT2X100D20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100A; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 100A
Case: SOT227B
Max. forward voltage: 1V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 171A
Mechanical mounting: screw
Technology: FRED
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100A; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 100A
Case: SOT227B
Max. forward voltage: 1V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 171A
Mechanical mounting: screw
Technology: FRED
товар відсутній
| APT2X100D20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100A; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 100A
Case: SOT227B
Max. forward voltage: 1V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 171A
Mechanical mounting: screw
Technology: FRED
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100A; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 100A
Case: SOT227B
Max. forward voltage: 1V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 171A
Mechanical mounting: screw
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT2X100D40J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
товар відсутній
| APT2X100D40J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
товар відсутній
| APT2X100DQ100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| APT2X100DQ100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
| APT2X101D20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Category: Diode modules
Description: Module: diode; double independent; 200V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
товар відсутній
| APT2X101D20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 200V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT2X101D30J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Category: Diode modules
Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
товар відсутній
| APT2X101D30J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT2X101D40J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
товар відсутній
| APT2X101D40J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
товар відсутній
| APT2X101DQ100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2638.62 грн |
| APT2X101DQ100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3166.34 грн |