Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4040) > Сторінка 36 з 68
| Фото | Назва | Виробник | Інформація |
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APT41F100J | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W Semiconductor structure: single transistor Case: ISOTOP Power dissipation: 960W Technology: POWER MOS 8® Electrical mounting: screw Pulsed drain current: 260A Polarisation: unipolar Drain current: 42A Kind of channel: enhanced Drain-source voltage: 1kV Mechanical mounting: screw Gate-source voltage: ±30V Type of module: MOSFET transistor On-state resistance: 0.2Ω |
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APT41F100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W Semiconductor structure: single transistor Case: ISOTOP Power dissipation: 960W Technology: POWER MOS 8® Electrical mounting: screw Pulsed drain current: 260A Polarisation: unipolar Drain current: 42A Kind of channel: enhanced Drain-source voltage: 1kV Mechanical mounting: screw Gate-source voltage: ±30V Type of module: MOSFET transistor On-state resistance: 0.2Ω кількість в упаковці: 1 шт |
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| APT41M80B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW Case: TO247MAX Drain current: 27A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.21Ω Gate-source voltage: ±30V Mounting: THT Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® |
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| APT41M80B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW Case: TO247MAX Drain current: 27A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.21Ω Gate-source voltage: ±30V Mounting: THT Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® кількість в упаковці: 1 шт |
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APT41M80L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264 Case: TO264 Drain current: 27A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.21Ω Gate-source voltage: ±30V Mounting: THT Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® |
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APT41M80L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264 Case: TO264 Drain current: 27A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.21Ω Gate-source voltage: ±30V Mounting: THT Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® кількість в упаковці: 1 шт |
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APT42F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 135A Power dissipation: 625W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 170nC Kind of channel: enhanced |
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APT42F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 135A Power dissipation: 625W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 170nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT43F60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced |
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| APT43F60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT43F60L | MICROCHIP (MICROSEMI) |
APT43F60L THT N channel transistors |
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| APT43GA90B | MICROCHIP (MICROSEMI) |
APT43GA90B THT IGBT transistors |
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APT43GA90BD30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3 Mounting: THT Case: TO247-3 Gate charge: 116nC Collector-emitter voltage: 900V Collector current: 43A Gate-emitter voltage: ±30V Pulsed collector current: 129A Turn-on time: 28ns Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 337W Turn-off time: 246ns Type of transistor: IGBT |
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APT43GA90BD30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3 Mounting: THT Case: TO247-3 Gate charge: 116nC Collector-emitter voltage: 900V Collector current: 43A Gate-emitter voltage: ±30V Pulsed collector current: 129A Turn-on time: 28ns Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 337W Turn-off time: 246ns Type of transistor: IGBT |
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| APT43M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced |
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| APT43M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT43M60L | MICROCHIP (MICROSEMI) |
APT43M60L THT N channel transistors |
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| APT44F80B2 | MICROCHIP (MICROSEMI) |
APT44F80B2 THT N channel transistors |
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| APT44F80L | MICROCHIP (MICROSEMI) |
APT44F80L THT N channel transistors |
на замовлення 6 шт: термін постачання 7-14 дні (днів) |
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| APT44GA60B | MICROCHIP (MICROSEMI) |
APT44GA60B THT IGBT transistors |
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| APT44GA60BD30 | MICROCHIP (MICROSEMI) |
APT44GA60BD30 THT IGBT transistors |
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APT45GP120B2DQ2G | MICROCHIP (MICROSEMI) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max Mounting: THT Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 54A Pulsed collector current: 170A Turn-on time: 47ns Turn-off time: 230ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 185nC Technology: POWER MOS 7®; PT |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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APT45GP120B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max Mounting: THT Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 54A Pulsed collector current: 170A Turn-on time: 47ns Turn-off time: 230ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 185nC Technology: POWER MOS 7®; PT кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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APT45GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 54A Pulsed collector current: 170A Turn-on time: 47ns Turn-off time: 230ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 185nC Technology: POWER MOS 7®; PT |
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APT45GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 54A Pulsed collector current: 170A Turn-on time: 47ns Turn-off time: 230ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 185nC Technology: POWER MOS 7®; PT кількість в упаковці: 1 шт |
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| APT45GP120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 34A Pulsed collector current: 170A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7®; PT |
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| APT45GP120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 34A Pulsed collector current: 170A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7®; PT кількість в упаковці: 1 шт |
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APT45GP120JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 34A Pulsed collector current: 170A Power dissipation: 329W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7® |
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APT45GP120JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 34A Pulsed collector current: 170A Power dissipation: 329W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7® кількість в упаковці: 1 шт |
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APT45GR65B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 56A Pulsed collector current: 224A Turn-on time: 47ns Turn-off time: 175ns Type of transistor: IGBT Power dissipation: 543W Kind of package: tube Gate charge: 150nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs |
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APT45GR65B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 56A Pulsed collector current: 224A Turn-on time: 47ns Turn-off time: 175ns Type of transistor: IGBT Power dissipation: 543W Kind of package: tube Gate charge: 150nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs кількість в упаковці: 1 шт |
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| APT45M100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.18Ω Power dissipation: 960W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 260A |
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| APT45M100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.18Ω Power dissipation: 960W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 260A кількість в упаковці: 1 шт |
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| APT46GA90JD40 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B Case: SOT227B Pulsed collector current: 136A Collector current: 46A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 900V Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT46GA90JD40 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B Case: SOT227B Pulsed collector current: 136A Collector current: 46A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 900V Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| APT47F60J | MICROCHIP (MICROSEMI) |
APT47F60J Transistor modules MOSFET |
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| APT47GA60JD40 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B Case: SOT227B Pulsed collector current: 139A Collector current: 47A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 0.6kV Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT47GA60JD40 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B Case: SOT227B Pulsed collector current: 139A Collector current: 47A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 0.6kV Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| APT47M60J | MICROCHIP (MICROSEMI) |
APT47M60J Transistor modules MOSFET |
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APT47N60BC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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APT47N60BC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 7-14 дні (днів) |
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APT47N60SC3G | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced |
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APT47N60SC3G | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT48M80B2 | MICROCHIP (MICROSEMI) |
APT48M80B2 THT N channel transistors |
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| APT48M80L | MICROCHIP (MICROSEMI) |
APT48M80L THT N channel transistors |
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APT4F120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Pulsed drain current: 15A Power dissipation: 225W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 43nC Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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APT4F120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Pulsed drain current: 15A Power dissipation: 225W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 43nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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| APT4F120S | MICROCHIP (MICROSEMI) |
APT4F120S SMD N channel transistors |
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APT4M120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Pulsed drain current: 15A Power dissipation: 225W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3.8Ω Mounting: THT Gate charge: 43nC Kind of channel: enhanced |
на замовлення 170 шт: термін постачання 21-30 дні (днів) |
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APT4M120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Pulsed drain current: 15A Power dissipation: 225W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3.8Ω Mounting: THT Gate charge: 43nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 170 шт: термін постачання 7-14 дні (днів) |
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| APT5010B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
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| APT5010B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT5010B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
товар відсутній |
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| APT5010B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| APT5010B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max Type of transistor: N-MOSFET Technology: FREDFET; POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Power dissipation: 520W Case: T-Max Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| APT5010B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max Type of transistor: N-MOSFET Technology: FREDFET; POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Power dissipation: 520W Case: T-Max Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| APT5010B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
товар відсутній |
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| APT5010B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| APT5010JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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| APT5010JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
| APT41F100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W
Semiconductor structure: single transistor
Case: ISOTOP
Power dissipation: 960W
Technology: POWER MOS 8®
Electrical mounting: screw
Pulsed drain current: 260A
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhanced
Drain-source voltage: 1kV
Mechanical mounting: screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
On-state resistance: 0.2Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W
Semiconductor structure: single transistor
Case: ISOTOP
Power dissipation: 960W
Technology: POWER MOS 8®
Electrical mounting: screw
Pulsed drain current: 260A
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhanced
Drain-source voltage: 1kV
Mechanical mounting: screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
On-state resistance: 0.2Ω
товар відсутній
| APT41F100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W
Semiconductor structure: single transistor
Case: ISOTOP
Power dissipation: 960W
Technology: POWER MOS 8®
Electrical mounting: screw
Pulsed drain current: 260A
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhanced
Drain-source voltage: 1kV
Mechanical mounting: screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
On-state resistance: 0.2Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W
Semiconductor structure: single transistor
Case: ISOTOP
Power dissipation: 960W
Technology: POWER MOS 8®
Electrical mounting: screw
Pulsed drain current: 260A
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhanced
Drain-source voltage: 1kV
Mechanical mounting: screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
On-state resistance: 0.2Ω
кількість в упаковці: 1 шт
товар відсутній
| APT41M80B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW
Case: TO247MAX
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW
Case: TO247MAX
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
товар відсутній
| APT41M80B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW
Case: TO247MAX
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW
Case: TO247MAX
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
товар відсутній
| APT41M80L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264
Case: TO264
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264
Case: TO264
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
товар відсутній
| APT41M80L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264
Case: TO264
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264
Case: TO264
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
товар відсутній
| APT42F50S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
товар відсутній
| APT42F50S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT43F60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
| APT43F60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT43GA90BD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Gate charge: 116nC
Collector-emitter voltage: 900V
Collector current: 43A
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 337W
Turn-off time: 246ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Gate charge: 116nC
Collector-emitter voltage: 900V
Collector current: 43A
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 337W
Turn-off time: 246ns
Type of transistor: IGBT
товар відсутній
| APT43GA90BD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Gate charge: 116nC
Collector-emitter voltage: 900V
Collector current: 43A
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 337W
Turn-off time: 246ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Gate charge: 116nC
Collector-emitter voltage: 900V
Collector current: 43A
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 337W
Turn-off time: 246ns
Type of transistor: IGBT
товар відсутній
| APT43M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
| APT43M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT44F80L |
|
Виробник: MICROCHIP (MICROSEMI)
APT44F80L THT N channel transistors
APT44F80L THT N channel transistors
на замовлення 6 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1645.96 грн |
| 2+ | 1556.24 грн |
| APT45GP120B2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max
Mounting: THT
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 185nC
Technology: POWER MOS 7®; PT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max
Mounting: THT
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 185nC
Technology: POWER MOS 7®; PT
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1607.21 грн |
| 2+ | 1411.17 грн |
| APT45GP120B2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max
Mounting: THT
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 185nC
Technology: POWER MOS 7®; PT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max
Mounting: THT
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 185nC
Technology: POWER MOS 7®; PT
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1928.65 грн |
| 2+ | 1758.54 грн |
| APT45GP120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 185nC
Technology: POWER MOS 7®; PT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 185nC
Technology: POWER MOS 7®; PT
товар відсутній
| APT45GP120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 185nC
Technology: POWER MOS 7®; PT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 185nC
Technology: POWER MOS 7®; PT
кількість в упаковці: 1 шт
товар відсутній
| APT45GP120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 170A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®; PT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 170A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®; PT
товар відсутній
| APT45GP120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 170A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®; PT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 170A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®; PT
кількість в упаковці: 1 шт
товар відсутній
| APT45GP120JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 34A
Pulsed collector current: 170A
Power dissipation: 329W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 34A
Pulsed collector current: 170A
Power dissipation: 329W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®
товар відсутній
| APT45GP120JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 34A
Pulsed collector current: 170A
Power dissipation: 329W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 34A
Pulsed collector current: 170A
Power dissipation: 329W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
товар відсутній
| APT45GR65B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 56A
Pulsed collector current: 224A
Turn-on time: 47ns
Turn-off time: 175ns
Type of transistor: IGBT
Power dissipation: 543W
Kind of package: tube
Gate charge: 150nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 56A
Pulsed collector current: 224A
Turn-on time: 47ns
Turn-off time: 175ns
Type of transistor: IGBT
Power dissipation: 543W
Kind of package: tube
Gate charge: 150nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
товар відсутній
| APT45GR65B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 56A
Pulsed collector current: 224A
Turn-on time: 47ns
Turn-off time: 175ns
Type of transistor: IGBT
Power dissipation: 543W
Kind of package: tube
Gate charge: 150nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 56A
Pulsed collector current: 224A
Turn-on time: 47ns
Turn-off time: 175ns
Type of transistor: IGBT
Power dissipation: 543W
Kind of package: tube
Gate charge: 150nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
кількість в упаковці: 1 шт
товар відсутній
| APT45M100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.18Ω
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 260A
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.18Ω
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 260A
товар відсутній
| APT45M100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.18Ω
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 260A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.18Ω
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 260A
кількість в упаковці: 1 шт
товар відсутній
| APT46GA90JD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT46GA90JD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT47GA60JD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT47GA60JD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT47N60BC3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1360.24 грн |
| 2+ | 1203.41 грн |
| 3+ | 1156.69 грн |
| APT47N60BC3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1632.29 грн |
| 2+ | 1499.64 грн |
| 3+ | 1388.02 грн |
| APT47N60SC3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
товар відсутній
| APT47N60SC3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT4F120K |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 15A
Power dissipation: 225W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 15A
Power dissipation: 225W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 347.61 грн |
| 3+ | 306.96 грн |
| 8+ | 305.53 грн |
| 10+ | 294.02 грн |
| APT4F120K |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 15A
Power dissipation: 225W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 15A
Power dissipation: 225W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 417.13 грн |
| 3+ | 382.52 грн |
| 8+ | 366.63 грн |
| 10+ | 352.83 грн |
| APT4M120K |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 15A
Power dissipation: 225W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.8Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 15A
Power dissipation: 225W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.8Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
на замовлення 170 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 408.77 грн |
| 3+ | 347.94 грн |
| 4+ | 268.86 грн |
| 9+ | 253.77 грн |
| APT4M120K |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 15A
Power dissipation: 225W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.8Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 15A
Power dissipation: 225W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.8Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 170 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 490.52 грн |
| 3+ | 433.59 грн |
| 4+ | 322.64 грн |
| 9+ | 304.52 грн |
| APT5010B2FLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT5010B2FLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5010B2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT5010B2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5010B2VFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| APT5010B2VFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5010B2VRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
товар відсутній
| APT5010B2VRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5010JFLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JFLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній