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NE85618-A NE85618-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 12V 6.5GHZ SOT343
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NE85618-T1-A NE85618-T1-A CEL Description: RF TRANS NPN 12V 6.5GHZ SOT343
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NE85619-A NE85619-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 12V 4.5GHZ SOT523
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-523
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NE85619-T1 NE85619-T1 CEL ne856.pdf Description: RF TRANS NPN 12V 4.5GHZ SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 6.5dB ~ 12.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-523
Part Status: Obsolete
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NE85619-T1-A NE85619-T1-A CEL Description: RF TRANS NPN 12V 4.5GHZ SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-523
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NE85619-T1-A NE85619-T1-A CEL Description: RF TRANS NPN 12V 4.5GHZ SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-523
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NE85619-T1-A NE85619-T1-A CEL ne85619-611258.pdf RF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor
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NE85630-A NE85630-A CEL Description: RF TRANS NPN 12V 4.5GHZ SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-323
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NE85630-R24-A NE85630-R24-A CEL Description: RF TRANS NPN 12V 4.5GHZ SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-323
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NE85630-R25-A NE85630-R25-A CEL Description: RF TRANS NPN 12V 4.5GHZ SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-323
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NE85630-T1 NE85630-T1 CEL Description: RF TRANS NPN 12V 4.5GHZ SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 6dB ~ 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-323
Part Status: Obsolete
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NE85630-T1-A NE85630-T1-A CEL Description: RF TRANS NPN 12V 4.5GHZ SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-323
Part Status: Obsolete
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NE85630-T1-R24-A NE85630-T1-R24-A CEL ne66219-243335.pdf RF Bipolar Transistors NPN High Frequency
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NE85630-T1-R24-A NE85630-T1-R24-A CEL ne85630.pdf Description: RF TRANS NPN 12V 4.5GHZ SOT323
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NE85630-T1-R25-A NE85630-T1-R25-A CEL Description: RF TRANS NPN 12V 4.5GHZ SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-323
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NE85632 CEL ne856-1186586.pdf RF Bipolar Transistors TO-92 NPN HI FREQ
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NE85633-A CEL ne85633.pdf Description: RF TRANS NPN 12V 7GHZ SOT23
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NE85633L-A NE85633L-A CEL Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE85633-R23-A NE85633-R23-A CEL NE85633_2SC3356_Rev3.00_6-28-11.pdf Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE85633-R24-A NE85633-R24-A CEL NE85633_2SC3356_Rev3.00_6-28-11.pdf Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE85633-R25-A NE85633-R25-A CEL NE85633_2SC3356_Rev3.00_6-28-11.pdf Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE85633-T1B NE85633-T1B CEL NE85633.pdf Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
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NE85633-T1B-A NE85633-T1B-A CEL ne85633-474677.pdf RF Bipolar Transistors NPN High Frequency
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NE85633-T1B-A NE85633-T1B-A CEL NE85633_2SC3356_Rev3.00_6-28-11.pdf Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
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NE85633-T1B-R23-A NE85633-T1B-R23-A CEL NE85633_2SC3356_Rev3.00_6-28-11.pdf Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
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NE85633-T1B-R24-A NE85633-T1B-R24-A CEL NE85633_2SC3356_Rev3.00_6-28-11.pdf Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE85633-T1B-R25-A NE85633-T1B-R25-A CEL ne85633-474677.pdf RF Bipolar Transistors NPN High Frequency
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NE85633-T1B-R25-A NE85633-T1B-R25-A CEL NE85633_2SC3356_Rev3.00_6-28-11.pdf Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE85633-T1B-R25-A NE85633-T1B-R25-A CEL NE85633_2SC3356_Rev3.00_6-28-11.pdf Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE85634-A NE85634-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 12V 6.5GHZ SOT-89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-89
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NE85634-T1 NE85634-T1 CEL Description: RF TRANS NPN 12V 6.5GHZ SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Supplier Device Package: SOT-89
Part Status: Obsolete
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NE85634-T1-A NE85634-T1-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 12V 6.5GHZ SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-89
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NE85634-T1-A NE85634-T1-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 12V 6.5GHZ SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-89
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NE85634-T1-RE-A NE85634-T1-RE-A CEL ne85634.pdf Description: RF TRANS NPN 12V 6.5GHZ SOT89
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NE85634-T1-RF-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 12V 6.5GHZ SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 1.2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-89
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NE85639-A NE85639-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 12V 9GHZ SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-143
Part Status: Obsolete
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NE85639R-T1 NE85639R-T1 CEL Description: RF TRANS NPN 12V 9GHZ SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
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NE85639R-T1 NE85639R-T1 CEL Description: RF TRANS NPN 12V 9GHZ SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
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NE85639R-T1-A NE85639R-T1-A CEL Description: RF TRANS NPN 12V 9GHZ SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Supplier Device Package: SOT-143R
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NE85639R-T1-A NE85639R-T1-A CEL Description: RF TRANS NPN 12V 9GHZ SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Supplier Device Package: SOT-143R
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NE85639-T1-A NE85639-T1-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 12V 9GHZ SOT-143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-143
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NE85639-T1-A NE85639-T1-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 12V 9GHZ SOT-143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-143
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NE85639-T1-A NE85639-T1-A CEL ne85639-611283.pdf RF Bipolar Transistors NPN High Frequency
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NE85639-T1-R27-A NE85639-T1-R27-A CEL Description: RF TRANS NPN 12V 9GHZ SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-143
Part Status: Obsolete
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+147.94 грн
9000+110.81 грн
Мінімальне замовлення: 3000
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NE856M02-AZ NE856M02-AZ CEL ne856m02.pdf Description: RF TRANS NPN 12V 6.5GHZ SOT89
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NE856M02-T1-AZ NE856M02-T1-AZ CEL ne856m02.pdf Description: SAME AS 2SC5336 NPN SILICON AMPL
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 1.2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: SOT-89
Part Status: Last Time Buy
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NE856M02-T1-AZ NE856M02-T1-AZ CEL ne856m02-16484.pdf RF Bipolar Transistors NPN Low Distort Amp
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NE856M03-A CEL NE856M03.pdf Description: RF TRANS NPN 12V 4.5GHZ 3-MINI
Packaging: Bulk
Package / Case: SOT-623F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 125mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.5dB @ 1GHz
Supplier Device Package: 3-SuperMiniMold (M03)
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NE894M13-A NE894M13-A CEL ne894m13.pdf Description: TRANS NPN 3GHZ M13
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
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NE894M13-T3 CEL RF Bipolar Transistors
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NE94430-T1-A NE94430-T1-A CEL Description: TRANS NPN OSC FT=2GHZ SOT-323
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NE94433-T1B NE94433-T1B CEL ne944.pdf Description: RF TRANS NPN 15V 2GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V
Frequency - Transition: 2GHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
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NE94433-T1B-A NE94433-T1B-A CEL ne944.pdf Description: RF TRANS NPN 15V 2GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Power - Max: 150mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V
Frequency - Transition: 2GHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
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NE97733-A NE97733-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS PNP 12V 8.5GHZ SOT-23-3
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE97733-T1B-A NE97733-T1B-A CEL Description: RF TRANS PNP 12V 8.5GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE97833-A NE97833-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS PNP 12V 5.5GHZ SOT-23-3
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Gain: 10dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE97833-T1B-A NE97833-T1B-A CEL ne97833.pdf Description: RF TRANSISTOR PNP SOT-23
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
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NE97833-T1B-A NE97833-T1B-A CEL ne97833-56053.pdf RF Bipolar Transistors Same as 2SA1978 PNP Silicon High Frequency Transistor, 5.5 GHz fT, RoHS compliant
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NESG2021M05-EVNF58 CEL Description: EVAL BOARD NESG2021M05 5.8GHZ
Packaging: Bulk
For Use With/Related Products: NESG2021M05@5.8GHz
Frequency: 5.2GHz
Type: Transistor
Supplied Contents: Board(s)
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NESG2021M16 CEL nesg2101m05-1186777.pdf RF Bipolar Transistors
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NE85618-A RF-Wireless-Brochure.pdf
NE85618-A
Виробник: CEL
Description: RF TRANS NPN 12V 6.5GHZ SOT343
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NE85618-T1-A
NE85618-T1-A
Виробник: CEL
Description: RF TRANS NPN 12V 6.5GHZ SOT343
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NE85619-A RF-Wireless-Brochure.pdf
NE85619-A
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ SOT523
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-523
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NE85619-T1 ne856.pdf
NE85619-T1
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 6.5dB ~ 12.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-523
Part Status: Obsolete
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NE85619-T1-A
NE85619-T1-A
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-523
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NE85619-T1-A
NE85619-T1-A
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-523
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NE85619-T1-A ne85619-611258.pdf
NE85619-T1-A
Виробник: CEL
RF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor
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NE85630-A
NE85630-A
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-323
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NE85630-R24-A
NE85630-R24-A
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-323
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NE85630-R25-A
NE85630-R25-A
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-323
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NE85630-T1
NE85630-T1
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 6dB ~ 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-323
Part Status: Obsolete
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NE85630-T1-A
NE85630-T1-A
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-323
Part Status: Obsolete
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NE85630-T1-R24-A ne66219-243335.pdf
NE85630-T1-R24-A
Виробник: CEL
RF Bipolar Transistors NPN High Frequency
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NE85630-T1-R24-A ne85630.pdf
NE85630-T1-R24-A
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ SOT323
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NE85630-T1-R25-A
NE85630-T1-R25-A
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-323
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NE85632 ne856-1186586.pdf
Виробник: CEL
RF Bipolar Transistors TO-92 NPN HI FREQ
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NE85633-A ne85633.pdf
Виробник: CEL
Description: RF TRANS NPN 12V 7GHZ SOT23
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NE85633L-A
NE85633L-A
Виробник: CEL
Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE85633-R23-A NE85633_2SC3356_Rev3.00_6-28-11.pdf
NE85633-R23-A
Виробник: CEL
Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE85633-R24-A NE85633_2SC3356_Rev3.00_6-28-11.pdf
NE85633-R24-A
Виробник: CEL
Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE85633-R25-A NE85633_2SC3356_Rev3.00_6-28-11.pdf
NE85633-R25-A
Виробник: CEL
Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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В кошику  од. на суму  грн.
NE85633-T1B NE85633.pdf
NE85633-T1B
Виробник: CEL
Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
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NE85633-T1B-A ne85633-474677.pdf
NE85633-T1B-A
Виробник: CEL
RF Bipolar Transistors NPN High Frequency
товару немає в наявності
В кошику  од. на суму  грн.
NE85633-T1B-A NE85633_2SC3356_Rev3.00_6-28-11.pdf
NE85633-T1B-A
Виробник: CEL
Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
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В кошику  од. на суму  грн.
NE85633-T1B-R23-A NE85633_2SC3356_Rev3.00_6-28-11.pdf
NE85633-T1B-R23-A
Виробник: CEL
Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
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NE85633-T1B-R24-A NE85633_2SC3356_Rev3.00_6-28-11.pdf
NE85633-T1B-R24-A
Виробник: CEL
Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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В кошику  од. на суму  грн.
NE85633-T1B-R25-A ne85633-474677.pdf
NE85633-T1B-R25-A
Виробник: CEL
RF Bipolar Transistors NPN High Frequency
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NE85633-T1B-R25-A NE85633_2SC3356_Rev3.00_6-28-11.pdf
NE85633-T1B-R25-A
Виробник: CEL
Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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В кошику  од. на суму  грн.
NE85633-T1B-R25-A NE85633_2SC3356_Rev3.00_6-28-11.pdf
NE85633-T1B-R25-A
Виробник: CEL
Description: RF TRANS NPN 12V 7GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-23-3
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В кошику  од. на суму  грн.
NE85634-A RF-Wireless-Brochure.pdf
NE85634-A
Виробник: CEL
Description: RF TRANS NPN 12V 6.5GHZ SOT-89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-89
товару немає в наявності
В кошику  од. на суму  грн.
NE85634-T1
NE85634-T1
Виробник: CEL
Description: RF TRANS NPN 12V 6.5GHZ SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Supplier Device Package: SOT-89
Part Status: Obsolete
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В кошику  од. на суму  грн.
NE85634-T1-A RF-Wireless-Brochure.pdf
NE85634-T1-A
Виробник: CEL
Description: RF TRANS NPN 12V 6.5GHZ SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-89
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В кошику  од. на суму  грн.
NE85634-T1-A RF-Wireless-Brochure.pdf
NE85634-T1-A
Виробник: CEL
Description: RF TRANS NPN 12V 6.5GHZ SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-89
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NE85634-T1-RE-A ne85634.pdf
NE85634-T1-RE-A
Виробник: CEL
Description: RF TRANS NPN 12V 6.5GHZ SOT89
товару немає в наявності
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NE85634-T1-RF-A RF-Wireless-Brochure.pdf
Виробник: CEL
Description: RF TRANS NPN 12V 6.5GHZ SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 1.2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-89
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В кошику  од. на суму  грн.
NE85639-A RF-Wireless-Brochure.pdf
NE85639-A
Виробник: CEL
Description: RF TRANS NPN 12V 9GHZ SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-143
Part Status: Obsolete
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NE85639R-T1
NE85639R-T1
Виробник: CEL
Description: RF TRANS NPN 12V 9GHZ SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
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В кошику  од. на суму  грн.
NE85639R-T1
NE85639R-T1
Виробник: CEL
Description: RF TRANS NPN 12V 9GHZ SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
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NE85639R-T1-A
NE85639R-T1-A
Виробник: CEL
Description: RF TRANS NPN 12V 9GHZ SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Supplier Device Package: SOT-143R
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NE85639R-T1-A
NE85639R-T1-A
Виробник: CEL
Description: RF TRANS NPN 12V 9GHZ SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Supplier Device Package: SOT-143R
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NE85639-T1-A RF-Wireless-Brochure.pdf
NE85639-T1-A
Виробник: CEL
Description: RF TRANS NPN 12V 9GHZ SOT-143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-143
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В кошику  од. на суму  грн.
NE85639-T1-A RF-Wireless-Brochure.pdf
NE85639-T1-A
Виробник: CEL
Description: RF TRANS NPN 12V 9GHZ SOT-143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-143
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В кошику  од. на суму  грн.
NE85639-T1-A ne85639-611283.pdf
NE85639-T1-A
Виробник: CEL
RF Bipolar Transistors NPN High Frequency
товару немає в наявності
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NE85639-T1-R27-A
NE85639-T1-R27-A
Виробник: CEL
Description: RF TRANS NPN 12V 9GHZ SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-143
Part Status: Obsolete
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+147.94 грн
9000+110.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NE856M02-AZ ne856m02.pdf
NE856M02-AZ
Виробник: CEL
Description: RF TRANS NPN 12V 6.5GHZ SOT89
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NE856M02-T1-AZ ne856m02.pdf
NE856M02-T1-AZ
Виробник: CEL
Description: SAME AS 2SC5336 NPN SILICON AMPL
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 1.2W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: SOT-89
Part Status: Last Time Buy
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NE856M02-T1-AZ ne856m02-16484.pdf
NE856M02-T1-AZ
Виробник: CEL
RF Bipolar Transistors NPN Low Distort Amp
товару немає в наявності
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NE856M03-A NE856M03.pdf
Виробник: CEL
Description: RF TRANS NPN 12V 4.5GHZ 3-MINI
Packaging: Bulk
Package / Case: SOT-623F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 125mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.5dB @ 1GHz
Supplier Device Package: 3-SuperMiniMold (M03)
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NE894M13-A ne894m13.pdf
NE894M13-A
Виробник: CEL
Description: TRANS NPN 3GHZ M13
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
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NE894M13-T3
Виробник: CEL
RF Bipolar Transistors
товару немає в наявності
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NE94430-T1-A
NE94430-T1-A
Виробник: CEL
Description: TRANS NPN OSC FT=2GHZ SOT-323
товару немає в наявності
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NE94433-T1B ne944.pdf
NE94433-T1B
Виробник: CEL
Description: RF TRANS NPN 15V 2GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V
Frequency - Transition: 2GHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
товару немає в наявності
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NE94433-T1B-A ne944.pdf
NE94433-T1B-A
Виробник: CEL
Description: RF TRANS NPN 15V 2GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Power - Max: 150mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V
Frequency - Transition: 2GHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
NE97733-A RF-Wireless-Brochure.pdf
NE97733-A
Виробник: CEL
Description: RF TRANS PNP 12V 8.5GHZ SOT-23-3
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Supplier Device Package: SOT-23-3
товару немає в наявності
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NE97733-T1B-A
NE97733-T1B-A
Виробник: CEL
Description: RF TRANS PNP 12V 8.5GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Supplier Device Package: SOT-23-3
товару немає в наявності
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NE97833-A RF-Wireless-Brochure.pdf
NE97833-A
Виробник: CEL
Description: RF TRANS PNP 12V 5.5GHZ SOT-23-3
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Gain: 10dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Supplier Device Package: SOT-23-3
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NE97833-T1B-A ne97833.pdf
NE97833-T1B-A
Виробник: CEL
Description: RF TRANSISTOR PNP SOT-23
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
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NE97833-T1B-A ne97833-56053.pdf
NE97833-T1B-A
Виробник: CEL
RF Bipolar Transistors Same as 2SA1978 PNP Silicon High Frequency Transistor, 5.5 GHz fT, RoHS compliant
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NESG2021M05-EVNF58
Виробник: CEL
Description: EVAL BOARD NESG2021M05 5.8GHZ
Packaging: Bulk
For Use With/Related Products: NESG2021M05@5.8GHz
Frequency: 5.2GHz
Type: Transistor
Supplied Contents: Board(s)
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NESG2021M16 nesg2101m05-1186777.pdf
Виробник: CEL
RF Bipolar Transistors
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