| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|
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CC-C2-B15-0322 | CoolCAD |
 Description: SiC Power MOSFET 1200V 12APackaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 10A, 15V FET Feature: Standard Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 5mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 200 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
|
| CC-C2-B15-0322 |
|
Виробник: CoolCAD
Description: SiC Power MOSFET 1200V 12A
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 10A, 15V
FET Feature: Standard
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 200 V
Description: SiC Power MOSFET 1200V 12A
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 10A, 15V
FET Feature: Standard
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 1179.26 грн |
| 10+ | 908.47 грн |