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SK56-DC DC Components DIODE SCHOTTKY, 5A, 60V, SMC
на замовлення 5 шт:
термін постачання 5 дні (днів)
В кошику  од. на суму  грн.
SM4001 SM4001 DC COMPONENTS sm4001_7.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; DO213AB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO213AB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 184 шт:
термін постачання 14-30 дні (днів)
85+5.34 грн
Мінімальне замовлення: 85
В кошику  од. на суму  грн.
SM4001 DC Components sm4001.pdf 1.0A 50V MELF=DO-213AB
на замовлення 5 шт:
термін постачання 5 дні (днів)
В кошику  од. на суму  грн.
SM4005 SM4005 DC COMPONENTS sm4001_7.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; DO213AB; Ufmax: 1.1V; Ifsm: 30A
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: DO213AB
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)
140+3.31 грн
200+2.14 грн
500+1.93 грн
2500+1.71 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
SM4007 DC COMPONENTS sm4001.pdf SM4007
на замовлення 71951 шт:
термін постачання 21-31 дні (днів)
3522+3.67 грн
5000+2.99 грн
10000+2.62 грн
25000+2.30 грн
Мінімальне замовлення: 3522
В кошику  од. на суму  грн.
SM4007 SM4007 DC COMPONENTS sm4001_7.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO213AB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DO213AB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 63426 шт:
термін постачання 14-30 дні (днів)
50+9.06 грн
65+6.48 грн
80+5.32 грн
100+4.34 грн
250+3.04 грн
500+2.43 грн
1000+2.17 грн
5000+1.83 грн
10000+1.64 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SM4007 DC Components sm4001.pdf Випрямний діод SMD; Io, A = 1; Uзвор, В = 1 000; Uf (max), В = 1,1; Тексп, °C = -65...+175; I, мкА @ Ur, В = 5 @ 1000; DO-213AB
на замовлення 36 шт:
термін постачання 3 дні (днів)
В кошику  од. на суму  грн.
SM5399 SM5399 DC COMPONENTS SM5391_ser.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; DO213AB; Ufmax: 1.1V; Ifsm: 30A
Case: DO213AB
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Kind of package: reel; tape
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SM5406 SM5406 DC COMPONENTS SM5400_ser.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; DO213AB; Ufmax: 1.1V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Load current: 3A
Max. forward impulse current: 100A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO213AB
на замовлення 4355 шт:
термін постачання 14-30 дні (днів)
45+10.51 грн
85+4.98 грн
100+4.46 грн
500+3.95 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
SM5408 SM5408 DC COMPONENTS SM5400_ser.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; DO213AB; Ufmax: 1.1V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: DO213AB
Max. forward voltage: 1.1V
на замовлення 2225 шт:
термін постачання 14-30 дні (днів)
45+10.33 грн
85+5.05 грн
100+4.56 грн
500+4.03 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
SM5819 DC Components sm5817.pdf Діод Шотткі smd; Io, A = 1; Uзвор, В = 40; Uf (max), В = 0,6; If, А = 1; Тексп, °C = -65...+125; Темп.опір,°C/Вт = 75; I, мкА @ Ur, В = 1000 @ 40; DO-213AB(MELF)
на замовлення 121 шт:
термін постачання 3 дні (днів)
В кошику  од. на суму  грн.
SMA2EZ15 SMA2EZ15 DC COMPONENTS SMA2EZ_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 2W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 1640 шт:
термін постачання 14-30 дні (днів)
80+5.89 грн
90+4.77 грн
105+4.17 грн
600+3.64 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA3EZ18 SMA3EZ18 DC COMPONENTS SMA3EZ_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 1975 шт:
термін постачання 14-30 дні (днів)
80+5.89 грн
85+5.05 грн
100+4.46 грн
600+4.09 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA4732A SMA4732A DC COMPONENTS SMA47xx_SZ1xxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 2145 шт:
термін постачання 14-30 дні (днів)
80+5.89 грн
100+4.32 грн
110+3.88 грн
600+3.14 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA4733A SMA4733A DC COMPONENTS SMA47xx_SZ1xxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 170 шт:
термін постачання 14-30 дні (днів)
80+5.80 грн
100+4.21 грн
115+3.79 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA4744A SMA4744A DC COMPONENTS SMA47xx_SZ1xxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 1249 шт:
термін постачання 14-30 дні (днів)
80+5.80 грн
100+4.23 грн
115+3.81 грн
600+3.08 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA4746A SMA4746A DC COMPONENTS SMA47xx_SZ1xxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 3130 шт:
термін постачання 14-30 дні (днів)
80+5.80 грн
100+4.21 грн
115+3.79 грн
600+3.07 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA5929B SMA5929B DC COMPONENTS SMA59xxB.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
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SMA5938B SMA5938B DC COMPONENTS SMA59xxB.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
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SMA5945B SMA5945B DC COMPONENTS SMA59xxB.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
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SMAJ120A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 133÷153V; 2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ120A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 133÷153V; 2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ12A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ12A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ13A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ13A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ14A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15.6÷17.9V; 17.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ180A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ180A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ18A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷23.3V; 13.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ18A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷23.3V; 13.7A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ200A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 220÷256V; 1.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ200A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 220÷256V; 1.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ20A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷25.5V; 12.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ220A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 242÷281.6V; 1.1A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...281.6V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ220A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 242÷281.6V; 1.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...281.6V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ22A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ22A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ24A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ24A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ28A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ28A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ30A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ30A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ33A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷42.2V; 7.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ33A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷42.2V; 7.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ36A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ36A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ40A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ40A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ5,0A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ5,0A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ58A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ58A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ6,0A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.67÷7.67V; 38.8A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ6,0A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.67÷7.67V; 38.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ6,5A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.22÷8.3V; 35.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ8,0A DC COMPONENTS smaj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 8.89÷10.23V; 29.4A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 29.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ8,0A DC COMPONENTS smaj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 8.89÷10.23V; 29.4A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMB5380B SMB5380B DC COMPONENTS SMB53xxB.pdf Category: SMD Zener diodes
Description: Diode: Zener; 5W; 120V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
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SK56-DC
Виробник: DC Components
DIODE SCHOTTKY, 5A, 60V, SMC
на замовлення 5 шт:
термін постачання 5 дні (днів)
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SM4001 sm4001_7.pdf
SM4001
Виробник: DC COMPONENTS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; DO213AB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO213AB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 184 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
85+5.34 грн
Мінімальне замовлення: 85
В кошику  од. на суму  грн.
SM4001 sm4001.pdf
Виробник: DC Components
1.0A 50V MELF=DO-213AB
на замовлення 5 шт:
термін постачання 5 дні (днів)
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SM4005 sm4001_7.pdf
SM4005
Виробник: DC COMPONENTS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; DO213AB; Ufmax: 1.1V; Ifsm: 30A
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: DO213AB
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
140+3.31 грн
200+2.14 грн
500+1.93 грн
2500+1.71 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
SM4007 sm4001.pdf
Виробник: DC COMPONENTS
SM4007
на замовлення 71951 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3522+3.67 грн
5000+2.99 грн
10000+2.62 грн
25000+2.30 грн
Мінімальне замовлення: 3522
В кошику  од. на суму  грн.
SM4007 sm4001_7.pdf
SM4007
Виробник: DC COMPONENTS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO213AB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DO213AB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 63426 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.06 грн
65+6.48 грн
80+5.32 грн
100+4.34 грн
250+3.04 грн
500+2.43 грн
1000+2.17 грн
5000+1.83 грн
10000+1.64 грн
Мінімальне замовлення: 50
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SM4007 sm4001.pdf
Виробник: DC Components
Випрямний діод SMD; Io, A = 1; Uзвор, В = 1 000; Uf (max), В = 1,1; Тексп, °C = -65...+175; I, мкА @ Ur, В = 5 @ 1000; DO-213AB
на замовлення 36 шт:
термін постачання 3 дні (днів)
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SM5399 SM5391_ser.pdf
SM5399
Виробник: DC COMPONENTS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; DO213AB; Ufmax: 1.1V; Ifsm: 30A
Case: DO213AB
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Kind of package: reel; tape
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SM5406 SM5400_ser.pdf
SM5406
Виробник: DC COMPONENTS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; DO213AB; Ufmax: 1.1V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Load current: 3A
Max. forward impulse current: 100A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO213AB
на замовлення 4355 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
45+10.51 грн
85+4.98 грн
100+4.46 грн
500+3.95 грн
Мінімальне замовлення: 45
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SM5408 SM5400_ser.pdf
SM5408
Виробник: DC COMPONENTS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; DO213AB; Ufmax: 1.1V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: DO213AB
Max. forward voltage: 1.1V
на замовлення 2225 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
45+10.33 грн
85+5.05 грн
100+4.56 грн
500+4.03 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
SM5819 sm5817.pdf
Виробник: DC Components
Діод Шотткі smd; Io, A = 1; Uзвор, В = 40; Uf (max), В = 0,6; If, А = 1; Тексп, °C = -65...+125; Темп.опір,°C/Вт = 75; I, мкА @ Ur, В = 1000 @ 40; DO-213AB(MELF)
на замовлення 121 шт:
термін постачання 3 дні (днів)
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SMA2EZ15 SMA2EZ_ser.pdf
SMA2EZ15
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 1640 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
80+5.89 грн
90+4.77 грн
105+4.17 грн
600+3.64 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA3EZ18 SMA3EZ_ser.pdf
SMA3EZ18
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 1975 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
80+5.89 грн
85+5.05 грн
100+4.46 грн
600+4.09 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA4732A SMA47xx_SZ1xxx.pdf
SMA4732A
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 2145 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
80+5.89 грн
100+4.32 грн
110+3.88 грн
600+3.14 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA4733A SMA47xx_SZ1xxx.pdf
SMA4733A
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 170 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
80+5.80 грн
100+4.21 грн
115+3.79 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA4744A SMA47xx_SZ1xxx.pdf
SMA4744A
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 1249 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
80+5.80 грн
100+4.23 грн
115+3.81 грн
600+3.08 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA4746A SMA47xx_SZ1xxx.pdf
SMA4746A
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
на замовлення 3130 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
80+5.80 грн
100+4.21 грн
115+3.79 грн
600+3.07 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
SMA5929B SMA59xxB.pdf
SMA5929B
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
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SMA5938B SMA59xxB.pdf
SMA5938B
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
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SMA5945B SMA59xxB.pdf
SMA5945B
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
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SMAJ120A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 133÷153V; 2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ120A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 133÷153V; 2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ12A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ12A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ13A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ13A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ14A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15.6÷17.9V; 17.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ180A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ180A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ18A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷23.3V; 13.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ18A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷23.3V; 13.7A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ200A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 220÷256V; 1.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ200A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 220÷256V; 1.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ20A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷25.5V; 12.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ220A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 242÷281.6V; 1.1A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...281.6V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ220A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 242÷281.6V; 1.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...281.6V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ22A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ22A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ24A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ24A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ28A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ28A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ30A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ30A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ33A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷42.2V; 7.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ33A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷42.2V; 7.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ36A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ36A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ40A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ40A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ5,0A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ5,0A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ58A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ58A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ6,0A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.67÷7.67V; 38.8A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ6,0A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.67÷7.67V; 38.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ6,5A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.22÷8.3V; 35.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ8,0A smaj.pdf
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 8.89÷10.23V; 29.4A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 29.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ8,0A smaj.pdf
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 8.89÷10.23V; 29.4A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMB5380B SMB53xxB.pdf
SMB5380B
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 5W; 120V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
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