Продукція > DC COMPONENTS > Всі товари виробника DC COMPONENTS (2598) > Сторінка 36 з 44
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SMAJ20A | DC COMPONENTS |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 22.2÷25.5V; 12.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Features of semiconductor devices: glass passivated |
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| SMAJ20CA | DC Components |
Супресори |
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В кошику од. на суму грн. | |
| SMAJ220A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 242÷281.6V; 1.1A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 220V Breakdown voltage: 242...281.6V Max. forward impulse current: 1.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Features of semiconductor devices: glass passivated |
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SMAJ22A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMAJ22A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ22A | DC Components |
SMAJ22A 400W, 22V, 5%, DO214AC, SMA Супресори |
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SMAJ24A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
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SMAJ24CA | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Tolerance: ±5% Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ24CA | DC Components |
Супресори |
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В кошику од. на суму грн. | |
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SMAJ26A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ26A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 9.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ26A | DC Components |
SMA (DO214AC), 400Вт; 26В; 9,5А Супресори |
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В кошику од. на суму грн. | |
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SMAJ28A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Tolerance: ±5% Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ30A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ30A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ30A | DC Components |
300W, 30V, 5%, UNIDIR, TVS Супресори |
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| SMAJ30CA | DC Components |
Двунапр. супрессор 30В 10%, 400Вт, SMA (SMD) Супресори |
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В кошику од. на суму грн. | |
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SMAJ33A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 36.7÷42.2V; 7.5A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Tolerance: ±5% Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ33CA | DC Components |
300W, 33V, 5%, BIDIR, TVS Супресори |
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SMAJ36A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 40÷46V; 6.9A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ36A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 40÷46V; 6.9A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 6.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. |
| SMAJ36CA | DC Components |
Супресори |
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В кошику од. на суму грн. | |
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SMAJ40A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...51.1V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
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SMAJ40A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...51.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
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| SMAJ40CA | DC Components |
Двунапр. супрессор 40В 10%, 400Вт, SMA (SMD) Супресори |
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| SMAJ43A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 47.8÷54.9V; 5.7A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8...54.9V Max. forward impulse current: 5.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |
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SMAJ45A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 50÷57.5V; 5.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50...57.5V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Tolerance: ±5% Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. |
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SMAJ48A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 53.3÷61.3V; 5.2A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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SMAJ5,0A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 0.8mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ5,0A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1.6mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ5.0CA | DC Components |
Двунапр. супрессор 5В 10%, 400Вт, SMA (SMD) DO-214AC Супресори |
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В кошику од. на суму грн. | |
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SMAJ51A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 4.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. |
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SMAJ51A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. |
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SMAJ54A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 60÷69V; 4.6A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 4.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. |
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SMAJ54A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 60÷69V; 4.6A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 4.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. |
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SMAJ58A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. |
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SMAJ58A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMAJ6,0A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 6.67÷7.67V; 38.8A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.67V Max. forward impulse current: 38.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1.6mA Tolerance: ±5% Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ6.0A | DC Components |
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори |
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В кошику од. на суму грн. |
| SMAJ6.0A-TR | DC Components |
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори |
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В кошику од. на суму грн. | |
| SMAJ6.0CA | DC Components |
Двунапр. супрессор 6В 10%, 400Вт, SMA (SMD) Супресори |
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В кошику од. на суму грн. | |
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SMAJ6,5A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 7.22÷8.3V; 35.7A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...8.3V Max. forward impulse current: 35.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1mA Tolerance: ±5% Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. |
| SMAJ6.5CA | DC Components |
Супресори |
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В кошику од. на суму грн. | |
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SMAJ60A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 66.7÷76.7V; 4.1A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...76.7V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. |
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SMAJ60A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 66.7÷76.7V; 4.1A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...76.7V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. |
| SMAJ60CA | DC Components |
Супресори |
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В кошику од. на суму грн. | |
| SMAJ64A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 71.1÷81.8V; 3.9A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 64V Breakdown voltage: 71.1...81.8V Max. forward impulse current: 3.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Features of semiconductor devices: glass passivated |
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| SMAJ64A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 71.1÷81.8V; 3.9A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 64V Breakdown voltage: 71.1...81.8V Max. forward impulse current: 3.9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Features of semiconductor devices: glass passivated |
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| SMAJ7.0CA | DC Components |
 400W, 7.0V, 5% Супресори |
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В кошику од. на суму грн. | |
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SMAJ7,5A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 8.33÷9.58V; 31A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.58V Max. forward impulse current: 31A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMAJ7,5A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 8.33÷9.58V; 31A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.58V Max. forward impulse current: 31A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMAJ75A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 83.3÷95.8V; 3.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 3.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. |
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SMAJ75A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 83.3÷95.8V; 3.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 3.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ8.0CA | DC Components |
Супресори |
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В кошику од. на суму грн. | |
| SMAJ9,0A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 10÷11.5V; 26A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 9V Breakdown voltage: 10...11.5V Max. forward impulse current: 26A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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 |
SMB2EZ10 | DC COMPONENTS |
Category: SMD Zener diodes Description: Diode: Zener; 2W; 10V; SMD; SMB; single diode; reel,tape Tolerance: ±5% Mounting: SMD Power dissipation: 2W Features of semiconductor devices: glass passivated Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Zener voltage: 10V Type of diode: Zener |
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Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
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SMB2EZ100 | DC COMPONENTS |
Category: SMD Zener diodes Description: Diode: Zener; 2W; 100V; SMD; SMB; single diode; reel,tape Tolerance: ±5% Mounting: SMD Power dissipation: 2W Features of semiconductor devices: glass passivated Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Zener voltage: 100V Type of diode: Zener |
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Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
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SMB2EZ12 | DC COMPONENTS |
Category: SMD Zener diodes Description: Diode: Zener; 2W; 12V; SMD; SMB; reel,tape; single diode Type of diode: Zener Power dissipation: 2W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Features of semiconductor devices: glass passivated |
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Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
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SMB2EZ150 | DC COMPONENTS |
Category: SMD Zener diodes Description: Diode: Zener; 2W; 150V; SMD; SMB; single diode; reel,tape Tolerance: ±5% Mounting: SMD Power dissipation: 2W Features of semiconductor devices: glass passivated Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Zener voltage: 150V Type of diode: Zener |
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Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
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SMB2EZ190 | DC COMPONENTS |
Category: SMD Zener diodes Description: Diode: Zener; 2W; 190V; SMD; SMB; reel,tape; single diode Kind of package: reel; tape Case: SMB Features of semiconductor devices: glass passivated Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Power dissipation: 2W Tolerance: ±5% Zener voltage: 190V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| SMAJ20A |
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Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷25.5V; 12.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷25.5V; 12.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
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| SMAJ220A |
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Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 242÷281.6V; 1.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...281.6V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 242÷281.6V; 1.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...281.6V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
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| SMAJ22A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ22A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ22A |
|
Виробник: DC Components
SMAJ22A 400W, 22V, 5%, DO214AC, SMA Супресори
SMAJ22A 400W, 22V, 5%, DO214AC, SMA Супресори
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| SMAJ24A |
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Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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| SMAJ24CA |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ26A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ26A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ26A |
|
Виробник: DC Components
SMA (DO214AC), 400Вт; 26В; 9,5А Супресори
SMA (DO214AC), 400Вт; 26В; 9,5А Супресори
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| SMAJ28A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ30A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ30A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ30A |
|
Виробник: DC Components
300W, 30V, 5%, UNIDIR, TVS Супресори
300W, 30V, 5%, UNIDIR, TVS Супресори
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| SMAJ30CA |
|
Виробник: DC Components
Двунапр. супрессор 30В 10%, 400Вт, SMA (SMD) Супресори
Двунапр. супрессор 30В 10%, 400Вт, SMA (SMD) Супресори
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| SMAJ33A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷42.2V; 7.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷42.2V; 7.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ33CA |
|
Виробник: DC Components
300W, 33V, 5%, BIDIR, TVS Супресори
300W, 33V, 5%, BIDIR, TVS Супресори
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| SMAJ36A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ36A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ40A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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| SMAJ40A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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| SMAJ40CA |
|
Виробник: DC Components
Двунапр. супрессор 40В 10%, 400Вт, SMA (SMD) Супресори
Двунапр. супрессор 40В 10%, 400Вт, SMA (SMD) Супресори
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| SMAJ43A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 47.8÷54.9V; 5.7A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 5.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 47.8÷54.9V; 5.7A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 5.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ45A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 50÷57.5V; 5.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 50÷57.5V; 5.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ48A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 53.3÷61.3V; 5.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 53.3÷61.3V; 5.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ5,0A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ5,0A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ5.0CA |
|
Виробник: DC Components
Двунапр. супрессор 5В 10%, 400Вт, SMA (SMD) DO-214AC Супресори
Двунапр. супрессор 5В 10%, 400Вт, SMA (SMD) DO-214AC Супресори
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| SMAJ51A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ51A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ54A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷69V; 4.6A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷69V; 4.6A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ54A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷69V; 4.6A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷69V; 4.6A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ58A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ58A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ6,0A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.67÷7.67V; 38.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.67÷7.67V; 38.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ6.0A |
|
Виробник: DC Components
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори
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| SMAJ6.0A-TR |
|
Виробник: DC Components
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори
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| SMAJ6.0CA |
|
Виробник: DC Components
Двунапр. супрессор 6В 10%, 400Вт, SMA (SMD) Супресори
Двунапр. супрессор 6В 10%, 400Вт, SMA (SMD) Супресори
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| SMAJ6,5A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.22÷8.3V; 35.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.22÷8.3V; 35.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ60A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 66.7÷76.7V; 4.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 66.7÷76.7V; 4.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ60A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 66.7÷76.7V; 4.1A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 66.7÷76.7V; 4.1A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ64A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 71.1÷81.8V; 3.9A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 71.1÷81.8V; 3.9A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
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| SMAJ64A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 71.1÷81.8V; 3.9A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 3.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 71.1÷81.8V; 3.9A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 3.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
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| SMAJ7.0CA |
|
Виробник: DC Components
400W, 7.0V, 5% Супресори
400W, 7.0V, 5% Супресори
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| SMAJ7,5A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 8.33÷9.58V; 31A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 8.33÷9.58V; 31A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ7,5A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 8.33÷9.58V; 31A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 8.33÷9.58V; 31A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ75A |
|
Виробник: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 83.3÷95.8V; 3.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 83.3÷95.8V; 3.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ75A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 83.3÷95.8V; 3.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 83.3÷95.8V; 3.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ9,0A |
|
Виробник: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 10÷11.5V; 26A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.5V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 10÷11.5V; 26A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.5V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMB2EZ10 |
|
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 10V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 2W
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 10V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 10V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 2W
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 10V
Type of diode: Zener
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Мінімальне замовлення: 10 шт
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| SMB2EZ100 |
|
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 100V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 2W
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 100V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 100V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 2W
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 100V
Type of diode: Zener
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Мінімальне замовлення: 10 шт
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| SMB2EZ12 |
|
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 12V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 12V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 10 шт
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| SMB2EZ150 |
|
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 150V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 2W
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 150V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 150V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 2W
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 150V
Type of diode: Zener
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Мінімальне замовлення: 10 шт
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| SMB2EZ190 |
|
Виробник: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 190V; SMD; SMB; reel,tape; single diode
Kind of package: reel; tape
Case: SMB
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 2W
Tolerance: ±5%
Zener voltage: 190V
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 190V; SMD; SMB; reel,tape; single diode
Kind of package: reel; tape
Case: SMB
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 2W
Tolerance: ±5%
Zener voltage: 190V
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Мінімальне замовлення: 10 шт
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