Продукція > ISSI, INTEGRATED SILICON SOLUTION INC > Всі товари виробника ISSI, INTEGRATED SILICON SOLUTION INC (4695) > Сторінка 35 з 79
Фото | Назва | Виробник | Інформація |
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IS43QR16256B-083RBL | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 4GBIT PAR 1.2GHZ 96BGA Packaging: Tray Package / Case: 96-BGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 96-BGA Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Memory Organization: 256M x 16 DigiKey Programmable: Not Verified |
на замовлення 396 шт: термін постачання 21-31 дні (днів) |
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IS43QR16256B-083RBLI | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 4GBIT PAR 1.2GHZ 96BGA Packaging: Tray Package / Case: 96-BGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 96-BGA Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Memory Organization: 256M x 16 DigiKey Programmable: Not Verified |
на замовлення 1378 шт: термін постачання 21-31 дні (днів) |
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IS43QR16512A-075VBL | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/ Packaging: Bulk Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.333 GHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 18 ns Memory Organization: 512M x 16 |
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IS43QR16512A-075VBLI | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/ Packaging: Bulk Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.333 GHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 18 ns Memory Organization: 512M x 16 |
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IS43QR16512A-083TBLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/ Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 18 ns Memory Organization: 512M x 16 |
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IS43QR16512A-083TBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/ Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 18 ns Memory Organization: 512M x 16 |
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IS43QR8K02S2A-083TBL | ISSI, Integrated Silicon Solution Inc |
Description: 16G, 1.2V, DDR4, 2MX8, DUAL RANK Packaging: Tray Package / Case: 78-LFBGA Mounting Type: Surface Mount Memory Size: 16Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 90°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 78-LWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 18 ns Memory Organization: 2G x 8 |
на замовлення 133 шт: термін постачання 21-31 дні (днів) |
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IS43R16160B-5TLI | ISSI, Integrated Silicon Solution Inc | Description: IC DDR SDRAM 256MBIT 66TSOP |
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IS43R16160B-5TLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 66TSOP II |
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IS43R16160B-5TL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR SDRAM 256MBIT 66TSOP |
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IS43R16160B-6TL | ISSI, Integrated Silicon Solution Inc | Description: IC DDR SDRAM 256MBIT 66TSOP |
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IS43R16160B-6TLI | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 66TSOP II |
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IS43R16160B-6TLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR SDRAM 256MBIT 66TSOP |
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IS43R16160B-6TL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 66TSOP II |
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IS43R16160D-5BL | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256M 200MHZ 60BGA |
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IS43R16160D-5BLI | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256M 200MHZ 60BGA |
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IS43R16160D-5BLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256M 200MHZ 60BGA |
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IS43R16160D-5BL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256M 200MHZ 60BGA |
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IS43R16160D-5TL | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256M 200MHZ 66TSOP |
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IS43R16160D-5TLI | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256M 200MHZ 66TSOP |
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IS43R16160D-5TLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 66TSOP II |
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IS43R16160D-5TL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256M PARALLEL 66TSOP II |
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IS43R16160D-6BI | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 60TFBGA |
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IS43R16160D-6BI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 60TFBGA |
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IS43R16160D-6BL | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 60TFBGA Packaging: Tray Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
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IS43R16160D-6BLI | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256M 166MHZ 60FBGA |
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IS43R16160D-6BLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256M 166MHZ 60FBGA |
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IS43R16160D-6BL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256M 166MHZ 60BGA |
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IS43R16160D-6TL | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 66TSOP II |
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IS43R16160D-6TLI | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 66TSOP II |
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IS43R16160D-6TLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256M 166MHZ 66TSOP |
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IS43R16160D-6TL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 66TSOP II |
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IS43R16160F-5BL | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256MB 200MHZ 2.5V 60BGA |
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IS43R16160F-5BLI | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PARALLEL 60TFBGA |
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IS43R16160F-5BLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256MB 200MHZ 2.5V 60BGA |
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IS43R16160F-5BL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256MB 200MHZ 2.5V 60BGA |
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IS43R16160F-5TL | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 66TSOP II |
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IS43R16160F-5TLI | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256MB 200MHZ 2.5V 66TSOP |
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IS43R16160F-5TLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 66TSOP II |
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IS43R16160F-5TL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256M PARALLEL 66TSOP II |
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IS43R16160F-6BL | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256MB 166MHZ 2.5V 60BGA |
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IS43R16160F-6BLI | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 60TFBGA Packaging: Tray Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IS43R16160F-6BLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256MB 166MHZ 2.5V 60BGA |
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IS43R16160F-6BL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 60TFBGA |
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IS43R16160F-6TL | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 66TSOP II Packaging: Tray Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
на замовлення 299 шт: термін постачання 21-31 дні (днів) |
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IS43R16160F-6TLI | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 66TSOP II Packaging: Tray Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
на замовлення 215 шт: термін постачання 21-31 дні (днів) |
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IS43R16160F-6TLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256MBIT PAR 66TSOP II |
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IS43R16160F-6TL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 256M PARALLEL 66TSOP II |
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IS43R16320D-5BL | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 512M 200MHZ 60BGA |
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IS43R16320D-5BLI | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 512MBIT PAR 60TFBGA |
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IS43R16320D-5BLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 512MBIT PAR 60TFBGA |
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IS43R16320D-5BL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 512M 200MHZ 60BGA |
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IS43R16320D-5TL | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 512M 200MHZ 66TSOP |
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IS43R16320D-5TLI | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 512M 200MHZ 66TSOP |
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IS43R16320D-5TLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 512MBIT PAR 66TSOP II |
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IS43R16320D-5TL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 512M 200MHZ 66TSOP |
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IS43R16320D-6BL | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 512M 166MHZ 60BGA |
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IS43R16320D-6BLI | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 512M 166MHZ 60BGA |
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IS43R16320D-6BLI-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 512M 166MHZ 60BGA |
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IS43R16320D-6BL-TR | ISSI, Integrated Silicon Solution Inc | Description: IC DDR 512M 166MHZ 60BGA |
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IS43QR16256B-083RBL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 4GBIT PAR 1.2GHZ 96BGA
Packaging: Tray
Package / Case: 96-BGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-BGA
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 4GBIT PAR 1.2GHZ 96BGA
Packaging: Tray
Package / Case: 96-BGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-BGA
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 396 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 658.01 грн |
10+ | 586.99 грн |
25+ | 573.7 грн |
40+ | 535.53 грн |
198+ | 471.43 грн |
396+ | 448.04 грн |
IS43QR16256B-083RBLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 4GBIT PAR 1.2GHZ 96BGA
Packaging: Tray
Package / Case: 96-BGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-BGA
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 4GBIT PAR 1.2GHZ 96BGA
Packaging: Tray
Package / Case: 96-BGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-BGA
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 1378 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 753.28 грн |
10+ | 671.33 грн |
25+ | 656.11 грн |
40+ | 612.43 грн |
198+ | 539.12 грн |
396+ | 512.37 грн |
594+ | 498.92 грн |
990+ | 482.34 грн |
IS43QR16512A-075VBL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
товар відсутній
IS43QR16512A-075VBLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
товар відсутній
IS43QR16512A-083TBLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
товар відсутній
IS43QR16512A-083TBL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
товар відсутній
IS43QR8K02S2A-083TBL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 16G, 1.2V, DDR4, 2MX8, DUAL RANK
Packaging: Tray
Package / Case: 78-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 90°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 78-LWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 2G x 8
Description: 16G, 1.2V, DDR4, 2MX8, DUAL RANK
Packaging: Tray
Package / Case: 78-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 90°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 78-LWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 2G x 8
на замовлення 133 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3185.19 грн |
10+ | 2845.05 грн |
25+ | 2743.47 грн |
40+ | 2510.51 грн |
IS43R16160B-5TLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR SDRAM 256MBIT 66TSOP
Description: IC DDR SDRAM 256MBIT 66TSOP
товар відсутній
IS43R16160B-5TLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Description: IC DRAM 256MBIT PAR 66TSOP II
товар відсутній
IS43R16160B-5TL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR SDRAM 256MBIT 66TSOP
Description: IC DDR SDRAM 256MBIT 66TSOP
товар відсутній
IS43R16160B-6TL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR SDRAM 256MBIT 66TSOP
Description: IC DDR SDRAM 256MBIT 66TSOP
товар відсутній
IS43R16160B-6TLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Description: IC DRAM 256MBIT PAR 66TSOP II
товар відсутній
IS43R16160B-6TLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR SDRAM 256MBIT 66TSOP
Description: IC DDR SDRAM 256MBIT 66TSOP
товар відсутній
IS43R16160B-6TL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Description: IC DRAM 256MBIT PAR 66TSOP II
товар відсутній
IS43R16160D-5BL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256M 200MHZ 60BGA
Description: IC DDR 256M 200MHZ 60BGA
товар відсутній
IS43R16160D-5BLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256M 200MHZ 60BGA
Description: IC DDR 256M 200MHZ 60BGA
товар відсутній
IS43R16160D-5BLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256M 200MHZ 60BGA
Description: IC DDR 256M 200MHZ 60BGA
товар відсутній
IS43R16160D-5BL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256M 200MHZ 60BGA
Description: IC DDR 256M 200MHZ 60BGA
товар відсутній
IS43R16160D-5TL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256M 200MHZ 66TSOP
Description: IC DDR 256M 200MHZ 66TSOP
товар відсутній
IS43R16160D-5TLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256M 200MHZ 66TSOP
Description: IC DDR 256M 200MHZ 66TSOP
товар відсутній
IS43R16160D-5TLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Description: IC DRAM 256MBIT PAR 66TSOP II
товар відсутній
IS43R16160D-5TL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256M PARALLEL 66TSOP II
Description: IC DRAM 256M PARALLEL 66TSOP II
товар відсутній
IS43R16160D-6BI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
Description: IC DRAM 256MBIT PAR 60TFBGA
товар відсутній
IS43R16160D-6BI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
Description: IC DRAM 256MBIT PAR 60TFBGA
товар відсутній
IS43R16160D-6BL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товар відсутній
IS43R16160D-6BLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256M 166MHZ 60FBGA
Description: IC DDR 256M 166MHZ 60FBGA
товар відсутній
IS43R16160D-6BLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256M 166MHZ 60FBGA
Description: IC DDR 256M 166MHZ 60FBGA
товар відсутній
IS43R16160D-6BL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256M 166MHZ 60BGA
Description: IC DDR 256M 166MHZ 60BGA
товар відсутній
IS43R16160D-6TL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Description: IC DRAM 256MBIT PAR 66TSOP II
товар відсутній
IS43R16160D-6TLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Description: IC DRAM 256MBIT PAR 66TSOP II
товар відсутній
IS43R16160D-6TLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256M 166MHZ 66TSOP
Description: IC DDR 256M 166MHZ 66TSOP
товар відсутній
IS43R16160D-6TL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Description: IC DRAM 256MBIT PAR 66TSOP II
товар відсутній
IS43R16160F-5BL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256MB 200MHZ 2.5V 60BGA
Description: IC DDR 256MB 200MHZ 2.5V 60BGA
товар відсутній
IS43R16160F-5BLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PARALLEL 60TFBGA
Description: IC DRAM 256MBIT PARALLEL 60TFBGA
товар відсутній
IS43R16160F-5BLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256MB 200MHZ 2.5V 60BGA
Description: IC DDR 256MB 200MHZ 2.5V 60BGA
товар відсутній
IS43R16160F-5BL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256MB 200MHZ 2.5V 60BGA
Description: IC DDR 256MB 200MHZ 2.5V 60BGA
товар відсутній
IS43R16160F-5TL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Description: IC DRAM 256MBIT PAR 66TSOP II
товар відсутній
IS43R16160F-5TLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256MB 200MHZ 2.5V 66TSOP
Description: IC DDR 256MB 200MHZ 2.5V 66TSOP
товар відсутній
IS43R16160F-5TLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Description: IC DRAM 256MBIT PAR 66TSOP II
товар відсутній
IS43R16160F-5TL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256M PARALLEL 66TSOP II
Description: IC DRAM 256M PARALLEL 66TSOP II
товар відсутній
IS43R16160F-6BL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256MB 166MHZ 2.5V 60BGA
Description: IC DDR 256MB 166MHZ 2.5V 60BGA
товар відсутній
IS43R16160F-6BLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 412.83 грн |
IS43R16160F-6BLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 256MB 166MHZ 2.5V 60BGA
Description: IC DDR 256MB 166MHZ 2.5V 60BGA
товар відсутній
IS43R16160F-6BL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
Description: IC DRAM 256MBIT PAR 60TFBGA
товар відсутній
IS43R16160F-6TL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 256MBIT PAR 66TSOP II
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 299 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 254.79 грн |
10+ | 220.24 грн |
25+ | 216.87 грн |
40+ | 203 грн |
108+ | 181.39 грн |
IS43R16160F-6TLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 256MBIT PAR 66TSOP II
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 215 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 245.92 грн |
10+ | 214.98 грн |
25+ | 210.36 грн |
40+ | 196.33 грн |
108+ | 176.04 грн |
IS43R16160F-6TLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 66TSOP II
Description: IC DRAM 256MBIT PAR 66TSOP II
товар відсутній
IS43R16160F-6TL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256M PARALLEL 66TSOP II
Description: IC DRAM 256M PARALLEL 66TSOP II
товар відсутній
IS43R16320D-5BL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 512M 200MHZ 60BGA
Description: IC DDR 512M 200MHZ 60BGA
товар відсутній
IS43R16320D-5BLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 60TFBGA
Description: IC DRAM 512MBIT PAR 60TFBGA
товар відсутній
IS43R16320D-5BLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 60TFBGA
Description: IC DRAM 512MBIT PAR 60TFBGA
товар відсутній
IS43R16320D-5BL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 512M 200MHZ 60BGA
Description: IC DDR 512M 200MHZ 60BGA
товар відсутній
IS43R16320D-5TL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 512M 200MHZ 66TSOP
Description: IC DDR 512M 200MHZ 66TSOP
товар відсутній
IS43R16320D-5TLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 512M 200MHZ 66TSOP
Description: IC DDR 512M 200MHZ 66TSOP
товар відсутній
IS43R16320D-5TLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 66TSOP II
Description: IC DRAM 512MBIT PAR 66TSOP II
товар відсутній
IS43R16320D-5TL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 512M 200MHZ 66TSOP
Description: IC DDR 512M 200MHZ 66TSOP
товар відсутній
IS43R16320D-6BL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 512M 166MHZ 60BGA
Description: IC DDR 512M 166MHZ 60BGA
товар відсутній
IS43R16320D-6BLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 512M 166MHZ 60BGA
Description: IC DDR 512M 166MHZ 60BGA
товар відсутній
IS43R16320D-6BLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 512M 166MHZ 60BGA
Description: IC DDR 512M 166MHZ 60BGA
товар відсутній
IS43R16320D-6BL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DDR 512M 166MHZ 60BGA
Description: IC DDR 512M 166MHZ 60BGA
товар відсутній