Продукція > ISSI, INTEGRATED SILICON SOLUTION INC > Всі товари виробника ISSI, INTEGRATED SILICON SOLUTION INC (5029) > Сторінка 70 з 84
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IS21ES08GA-JQLI-TR | ISSI, Integrated Silicon Solution Inc |
 Description: IC FLASH 64GBIT EMMC 100LFBGAPackaging: Cut Tape (CT) Package / Case: 100-LBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (MLC) Memory Format: FLASH Supplier Device Package: 100-LFBGA (14x18) Part Status: Active Memory Interface: eMMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified |
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IS21ES08GA-JQLI | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 64GBIT EMMC 100LFBGA Packaging: Tray Package / Case: 100-LBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (MLC) Memory Format: FLASH Supplier Device Package: 100-LFBGA (14x18) Part Status: Active Memory Interface: eMMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified |
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| IS34MW02G084-BLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 2Gbit (x8, 4 bit ECC), 63 BALL Memory Organization: 256M x 8 Access Time: 30 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Part Status: Active Supplier Device Package: 63-VFBGA (9x11) Memory Format: FLASH Technology: FLASH - NAND (SLC) Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 2Gbit Mounting Type: Surface Mount Package / Case: 63-VFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
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| IS34MW02G084-BLI | ISSI, Integrated Silicon Solution Inc |
Description: 2Gbit (x8, 4 bit ECC), 63 BALL DigiKey Programmable: Not Verified Qualification: AEC-Q100 Grade: Automotive Memory Organization: 256M x 8 Access Time: 30 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Part Status: Active Supplier Device Package: 63-VFBGA (9x11) Memory Format: FLASH Technology: FLASH - NAND (SLC) Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 2Gbit Mounting Type: Surface Mount Package / Case: 63-VFBGA Packaging: Bulk |
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IS25LQ020B-JVLE | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 2MBIT SPI/QUAD 8VVSOP Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Memory Organization: 256K x 8 Access Time: 8 ns Memory Interface: SPI - Quad I/O Write Cycle Time - Word, Page: 800µs Part Status: Obsolete Supplier Device Package: 8-VVSOP Memory Format: FLASH Clock Frequency: 104 MHz Technology: FLASH - NOR Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 2Mbit Mounting Type: Surface Mount DigiKey Programmable: Not Verified |
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| IS43TR16512S1DL-125KBLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M Packaging: Tape & Reel (TR) Package / Case: 96-LFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-LFBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43TR16512BL-125KBLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43TR16512S1DL-125KBL | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M Packaging: Bulk Package / Case: 96-LFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-LWBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43TR16512S1DL-125KBLI | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M Packaging: Bulk Package / Case: 96-LFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-LWBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43TR16512BL-125KBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43TR16512B-107MBL | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.5V, DDR3, 512Mx16, 1866MT/ Packaging: Bulk Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43TR16512S1DL-125KBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M Packaging: Tape & Reel (TR) Package / Case: 96-LFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-LFBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43TR16512B-125KBLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.5V, DDR3, 512Mx16, 1600MT/ Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43QR16512A-083TBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/ Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 18 ns Memory Organization: 512M x 16 |
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| IS43TR16512B-107MBLI | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.5V, DDR3, 512Mx16, 1866MT/ Packaging: Bulk Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43TR16512S2DL-107MBL | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M Packaging: Bulk Package / Case: 96-LFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-LWBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43TR16512B-107MBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.5V, DDR3, 512Mx16, 1866MT/ Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43TR16512S2DL-107MBLI | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M Packaging: Bulk Package / Case: 96-LFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-LWBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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| IS43QR16512A-075VBL | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/ Packaging: Bulk Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.333 GHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 18 ns Memory Organization: 512M x 16 |
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| IS43QR16512A-083TBLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/ Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 18 ns Memory Organization: 512M x 16 |
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| IS43QR16512A-075VBLI | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/ Packaging: Bulk Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.333 GHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 18 ns Memory Organization: 512M x 16 |
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| IS62WV25616ECLL-35BLI | ISSI, Integrated Silicon Solution Inc |
Description: 4Mb, Low Power/Power Saver,Async Packaging: Bulk Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 256K x 16 |
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| IS62WV25616ECLL-35TLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 4Mb, Low Power/Power Saver,Async Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 256K x 16 |
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| IS62WV25616ECLL-35TLI | ISSI, Integrated Silicon Solution Inc |
Description: 4Mb, Low Power/Power Saver,Async Packaging: Bulk Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 256K x 16 |
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| IS62WV25616ECLL-35BLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 4Mb, Low Power/Power Saver,Async Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 256K x 16 |
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IS43TR16256B-125KBLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 4GBIT PARALLEL 96TWBGA Part Status: Active Supplier Device Package: 96-TWBGA (9x13) Memory Format: DRAM Clock Frequency: 800 MHz Technology: SDRAM - DDR3 Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 96-TFBGA Packaging: Tape & Reel (TR) Memory Organization: 256M x 16 Access Time: 20 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 15ns |
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IS67WVC4M16ALL-7010BLA1 | ISSI, Integrated Silicon Solution Inc |
Description: IC PSRAM 64MBIT PAR 54VFBGA Packaging: Tray Package / Case: 54-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 104 MHz Memory Format: PSRAM Supplier Device Package: 54-VFBGA (6x8) Part Status: Discontinued at Digi-Key Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 4M x 16 DigiKey Programmable: Not Verified |
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%20Renders/706;48TFBGA-1.2-6x8;;48.jpg "IS66WVE1M16BLL-70BLI") |
IS66WVE1M16BLL-70BLI | ISSI, Integrated Silicon Solution Inc |
Description: IC PSRAM 16MBIT PARALLEL 48TFBGA Packaging: Tray Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Memory Format: PSRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Discontinued at Digi-Key Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 1M x 16 |
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| IS43TR16512S2DL-107MBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M Packaging: Tape & Reel (TR) Package / Case: 96-LFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-LWBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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В кошику од. на суму грн. | |
| IS43TR16512B-125KBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.5V, DDR3, 512Mx16, 1600MT/ Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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В кошику од. на суму грн. | |
| IS43TR16512BL-107MBLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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В кошику од. на суму грн. | |
| IS43TR16512BL-107MBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (10x14) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 16 |
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%20Renders/706;-78TWBGA-1.2-8x10.5;-;-78.jpg "IS43TR81280B-125KBLI") |
IS43TR81280B-125KBLI | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 1GBIT PARALLEL 78TWBGA Memory Organization: 128M x 8 Access Time: 20 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 15ns Part Status: Obsolete Supplier Device Package: 78-TWBGA (8x10.5) Memory Format: DRAM Clock Frequency: 800 MHz Technology: SDRAM - DDR3 Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Memory Type: Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 78-TFBGA Packaging: Tray |
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IS46TR81280B-125JBLA25 | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 1GBIT PARALLEL 78TWBGA Memory Organization: 128M x 8 Access Time: 20 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 15ns Part Status: Obsolete Supplier Device Package: 78-TWBGA (8x10.5) Memory Format: DRAM Clock Frequency: 800 MHz Technology: SDRAM - DDR3 Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 115°C (TC) Memory Type: Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 78-TFBGA Packaging: Tray |
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IS46TR81280B-125JBLA25-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 1GBIT PARALLEL 78TWBGA Memory Organization: 128M x 8 Access Time: 20 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 15ns Part Status: Obsolete Supplier Device Package: 78-TWBGA (8x10.5) Memory Format: DRAM Clock Frequency: 800 MHz Technology: SDRAM - DDR3 Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 115°C (TC) Memory Type: Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 78-TFBGA Packaging: Tape & Reel (TR) |
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| IS34ML01G084-BLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 1 Gbit (x8, 4 bit ECC), 63 Ball Grade: Automotive Memory Format: FLASH Technology: FLASH - NAND (SLC) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 63-VFBGA Packaging: Tape & Reel (TR) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 20 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 25ns Part Status: Active Supplier Device Package: 63-VFBGA (9x11) |
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| IS34ML01G081-BLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 1 Gbit(x8, 1 bit ECC), 63 Ball V Qualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 63-VFBGA Packaging: Tape & Reel (TR) Memory Organization: 128M x 8 Access Time: 20 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 25ns Part Status: Active Supplier Device Package: 63-VFBGA (9x11) Memory Format: FLASH Technology: FLASH - NAND (SLC) |
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| IS43TR16128D-107MBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 2G, 1.5V, DDR3, 128Mx16, 1866MT/ Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 16 |
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 |
IS43TR82560C-125KBL | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 78TWBGA Packaging: Bulk Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 |
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IS43TR82560C-125KBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 78TWBGA Packaging: Tape & Reel (TR) Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 |
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| IS43TR16128DL-107MBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 2G, 1.5V, DDR3, 128Mx16, 1866MT/ Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 16 |
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| IS43TR82560D-107MBLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 2G, 1.5V, DDR3L, 256Mx8, 1866MT/ Packaging: Tape & Reel (TR) Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 |
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| IS43TR82560D-107MBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 2G, 1.5V, DDR3L, 256Mx8, 1866MT/ Packaging: Tape & Reel (TR) Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 |
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| IS43TR82560D-107MBLI | ISSI, Integrated Silicon Solution Inc |
Description: 2G, 1.5V, DDR3L, 256Mx8, 1866MT/ Packaging: Bulk Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 |
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| IS43TR82560DL-107MBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT Packaging: Tape & Reel (TR) Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 |
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IS43TR82560CL-125KBL | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 78TWBGA Packaging: Bulk Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 |
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| IS43TR82560DL-107MBL | ISSI, Integrated Silicon Solution Inc |
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT Packaging: Bulk Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
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| IS43TR82560DL-107MBLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT Packaging: Tape & Reel (TR) Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 |
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| IS43TR16128CL-125KBL | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 96TWBGA Packaging: Bulk Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 16 |
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| IS43TR82560DL-107MBLI | ISSI, Integrated Silicon Solution Inc |
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT Packaging: Bulk Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 |
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|
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IS43TR82560CL-125KBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 78TWBGA Packaging: Tape & Reel (TR) Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
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| IS46TR16128DL-107MBLA1-TR | ISSI, Integrated Silicon Solution Inc |
Description: Automotive (Tc: -40 to +95C), 2G Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 16 |
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| IS46TR16128DL-107MBLA1 | ISSI, Integrated Silicon Solution Inc |
Description: Automotive (Tc: -40 to +95C), 2G Packaging: Bulk Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 16 |
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| IS61WV6416EEBLL-10KLI | ISSI, Integrated Silicon Solution Inc |
Description: 1Mb,High-Speed/Low Power,Async w Packaging: Bulk Package / Case: 36-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-SOJ Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 64K x 16 |
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| IS25WP256E-RHLA3 | ISSI, Integrated Silicon Solution Inc |
Description: 256Mb QPI/QSPI, 24-ball TFBGA 6x Memory Organization: 32M x 8 Access Time: 5.5 ns Memory Interface: SPI - Quad I/O, QPI, DTR Write Cycle Time - Word, Page: 50µs, 1ms Part Status: Active Supplier Device Package: 24-TFBGA (6x8) Memory Format: FLASH Clock Frequency: 166 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Bulk |
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| IS25WP064D-JBLE-TR | ISSI, Integrated Silicon Solution Inc |
Description: 64Mb QPI/QSPI, 8-pin SOP 208Mil, Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O, QPI, DTR Write Cycle Time - Word, Page: 40µs, 800µs Part Status: Active Supplier Device Package: 8-SOIC Memory Format: FLASH Clock Frequency: 166 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
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| IS25WP020E-JYLE-TR | ISSI, Integrated Silicon Solution Inc |
Description: 2Mb QSPI, 8-pin USON 2x3mm , RoH Memory Organization: 256K x 8 Access Time: 8 ns Memory Interface: SPI - Quad I/O, QPI Write Cycle Time - Word, Page: 40µs, 1.2ms Part Status: Active Supplier Device Package: 8-USON (2x3) Memory Format: FLASH Clock Frequency: 104 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 2Mbit Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
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IS25LP032D-JNLA3-TR | ISSI, Integrated Silicon Solution Inc |
Description: 32Mb QSPI, 8-pin SOP 150Mil, RoH Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Memory Organization: 4M x 8 Access Time: 7 ns Memory Interface: SPI - Quad I/O, QPI, DTR Write Cycle Time - Word, Page: 40µs, 800µs Part Status: Active Supplier Device Package: 8-SOIC Memory Format: FLASH Clock Frequency: 133 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 32Mbit Mounting Type: Surface Mount DigiKey Programmable: Not Verified |
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IS25WP128F-JBLA3-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC Write Cycle Time - Word, Page: 40µs, 800µs Part Status: Active Supplier Device Package: 8-SOIC Memory Format: FLASH Clock Frequency: 166 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 128Mbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) Memory Organization: 16M x 8 Access Time: 5.5 ns Memory Interface: SPI - Quad I/O, QPI, DTR Qualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive |
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IS25WE256E-RHLA3-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 256MBIT SPI/OCT Memory Organization: 32M x 8 Access Time: 5.5 ns Memory Interface: SPI - Quad I/O, QPI, DTR Write Cycle Time - Word, Page: 50µs, 1ms Qualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Part Status: Active Supplier Device Package: 24-TFBGA (6x8) Memory Format: FLASH Clock Frequency: 166 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tape & Reel (TR) |
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| IS21ES08GA-JQLI-TR |
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Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 64GBIT EMMC 100LFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Memory Format: FLASH
Supplier Device Package: 100-LFBGA (14x18)
Part Status: Active
Memory Interface: eMMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64GBIT EMMC 100LFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Memory Format: FLASH
Supplier Device Package: 100-LFBGA (14x18)
Part Status: Active
Memory Interface: eMMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
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| IS21ES08GA-JQLI |
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Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 64GBIT EMMC 100LFBGA
Packaging: Tray
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Memory Format: FLASH
Supplier Device Package: 100-LFBGA (14x18)
Part Status: Active
Memory Interface: eMMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64GBIT EMMC 100LFBGA
Packaging: Tray
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Memory Format: FLASH
Supplier Device Package: 100-LFBGA (14x18)
Part Status: Active
Memory Interface: eMMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
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| IS34MW02G084-BLI-TR |
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Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2Gbit (x8, 4 bit ECC), 63 BALL
Memory Organization: 256M x 8
Access Time: 30 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 63-VFBGA (9x11)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: 2Gbit (x8, 4 bit ECC), 63 BALL
Memory Organization: 256M x 8
Access Time: 30 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 63-VFBGA (9x11)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| IS34MW02G084-BLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2Gbit (x8, 4 bit ECC), 63 BALL
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 256M x 8
Access Time: 30 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 63-VFBGA (9x11)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Packaging: Bulk
Description: 2Gbit (x8, 4 bit ECC), 63 BALL
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 256M x 8
Access Time: 30 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 63-VFBGA (9x11)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Packaging: Bulk
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| IS25LQ020B-JVLE |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 2MBIT SPI/QUAD 8VVSOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Memory Organization: 256K x 8
Access Time: 8 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 800µs
Part Status: Obsolete
Supplier Device Package: 8-VVSOP
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Description: IC FLASH 2MBIT SPI/QUAD 8VVSOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Memory Organization: 256K x 8
Access Time: 8 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 800µs
Part Status: Obsolete
Supplier Device Package: 8-VVSOP
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
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| IS43TR16512S1DL-125KBLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Tape & Reel (TR)
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-LFBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Tape & Reel (TR)
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-LFBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512BL-125KBLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512S1DL-125KBL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Bulk
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Bulk
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512S1DL-125KBLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Bulk
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Bulk
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512BL-125KBL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512B-107MBL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.5V, DDR3, 512Mx16, 1866MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.5V, DDR3, 512Mx16, 1866MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512S1DL-125KBL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Tape & Reel (TR)
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-LFBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.35V, DDR3L, 512Mx16, 1600M
Packaging: Tape & Reel (TR)
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-LFBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512B-125KBLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.5V, DDR3, 512Mx16, 1600MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.5V, DDR3, 512Mx16, 1600MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43QR16512A-083TBL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
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| IS43TR16512B-107MBLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.5V, DDR3, 512Mx16, 1866MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.5V, DDR3, 512Mx16, 1866MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512S2DL-107MBL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M
Packaging: Bulk
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M
Packaging: Bulk
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512B-107MBL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.5V, DDR3, 512Mx16, 1866MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.5V, DDR3, 512Mx16, 1866MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512S2DL-107MBLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M
Packaging: Bulk
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M
Packaging: Bulk
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43QR16512A-075VBL |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
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| IS43QR16512A-083TBLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
Description: 8G, 1.2V, DDR4, 512Mx16, 2400MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
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| IS43QR16512A-075VBLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
Description: 8G, 1.2V, DDR4, 512Mx16, 2666MT/
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 512M x 16
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| IS62WV25616ECLL-35BLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 4Mb, Low Power/Power Saver,Async
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 256K x 16
Description: 4Mb, Low Power/Power Saver,Async
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 256K x 16
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| IS62WV25616ECLL-35TLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 4Mb, Low Power/Power Saver,Async
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 256K x 16
Description: 4Mb, Low Power/Power Saver,Async
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 256K x 16
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| IS62WV25616ECLL-35TLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 4Mb, Low Power/Power Saver,Async
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 256K x 16
Description: 4Mb, Low Power/Power Saver,Async
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 256K x 16
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| IS62WV25616ECLL-35BLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 4Mb, Low Power/Power Saver,Async
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 256K x 16
Description: 4Mb, Low Power/Power Saver,Async
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 256K x 16
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| IS43TR16256B-125KBLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 4GBIT PARALLEL 96TWBGA
Part Status: Active
Supplier Device Package: 96-TWBGA (9x13)
Memory Format: DRAM
Clock Frequency: 800 MHz
Technology: SDRAM - DDR3
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Packaging: Tape & Reel (TR)
Memory Organization: 256M x 16
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Description: IC DRAM 4GBIT PARALLEL 96TWBGA
Part Status: Active
Supplier Device Package: 96-TWBGA (9x13)
Memory Format: DRAM
Clock Frequency: 800 MHz
Technology: SDRAM - DDR3
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Packaging: Tape & Reel (TR)
Memory Organization: 256M x 16
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
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| IS67WVC4M16ALL-7010BLA1 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC PSRAM 64MBIT PAR 54VFBGA
Packaging: Tray
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 54-VFBGA (6x8)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Description: IC PSRAM 64MBIT PAR 54VFBGA
Packaging: Tray
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 54-VFBGA (6x8)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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| IS66WVE1M16BLL-70BLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC PSRAM 16MBIT PARALLEL 48TFBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Memory Format: PSRAM
Supplier Device Package: 48-TFBGA (6x8)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 16
Description: IC PSRAM 16MBIT PARALLEL 48TFBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Memory Format: PSRAM
Supplier Device Package: 48-TFBGA (6x8)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 16
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| IS43TR16512S2DL-107MBL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M
Packaging: Tape & Reel (TR)
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M
Packaging: Tape & Reel (TR)
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512B-125KBL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.5V, DDR3, 512Mx16, 1600MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.5V, DDR3, 512Mx16, 1600MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512BL-107MBLI-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR16512BL-107MBL-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
Description: 8G, 1.35V, DDR3L, 512Mx16, 1866M
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (10x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
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| IS43TR81280B-125KBLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 78TWBGA
Memory Organization: 128M x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Obsolete
Supplier Device Package: 78-TWBGA (8x10.5)
Memory Format: DRAM
Clock Frequency: 800 MHz
Technology: SDRAM - DDR3
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Packaging: Tray
Description: IC DRAM 1GBIT PARALLEL 78TWBGA
Memory Organization: 128M x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Obsolete
Supplier Device Package: 78-TWBGA (8x10.5)
Memory Format: DRAM
Clock Frequency: 800 MHz
Technology: SDRAM - DDR3
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Packaging: Tray
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| IS46TR81280B-125JBLA25 |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 78TWBGA
Memory Organization: 128M x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Obsolete
Supplier Device Package: 78-TWBGA (8x10.5)
Memory Format: DRAM
Clock Frequency: 800 MHz
Technology: SDRAM - DDR3
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 115°C (TC)
Memory Type: Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Packaging: Tray
Description: IC DRAM 1GBIT PARALLEL 78TWBGA
Memory Organization: 128M x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Obsolete
Supplier Device Package: 78-TWBGA (8x10.5)
Memory Format: DRAM
Clock Frequency: 800 MHz
Technology: SDRAM - DDR3
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 115°C (TC)
Memory Type: Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Packaging: Tray
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| IS46TR81280B-125JBLA25-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 78TWBGA
Memory Organization: 128M x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Obsolete
Supplier Device Package: 78-TWBGA (8x10.5)
Memory Format: DRAM
Clock Frequency: 800 MHz
Technology: SDRAM - DDR3
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 115°C (TC)
Memory Type: Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Packaging: Tape & Reel (TR)
Description: IC DRAM 1GBIT PARALLEL 78TWBGA
Memory Organization: 128M x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Obsolete
Supplier Device Package: 78-TWBGA (8x10.5)
Memory Format: DRAM
Clock Frequency: 800 MHz
Technology: SDRAM - DDR3
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 115°C (TC)
Memory Type: Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Packaging: Tape & Reel (TR)
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| IS34ML01G084-BLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 1 Gbit (x8, 4 bit ECC), 63 Ball
Grade: Automotive
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Part Status: Active
Supplier Device Package: 63-VFBGA (9x11)
Description: 1 Gbit (x8, 4 bit ECC), 63 Ball
Grade: Automotive
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Part Status: Active
Supplier Device Package: 63-VFBGA (9x11)
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| IS34ML01G081-BLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 1 Gbit(x8, 1 bit ECC), 63 Ball V
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Packaging: Tape & Reel (TR)
Memory Organization: 128M x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Part Status: Active
Supplier Device Package: 63-VFBGA (9x11)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Description: 1 Gbit(x8, 1 bit ECC), 63 Ball V
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Packaging: Tape & Reel (TR)
Memory Organization: 128M x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Part Status: Active
Supplier Device Package: 63-VFBGA (9x11)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
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| IS43TR16128D-107MBL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2G, 1.5V, DDR3, 128Mx16, 1866MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
Description: 2G, 1.5V, DDR3, 128Mx16, 1866MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
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| IS43TR82560C-125KBL |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
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| IS43TR82560C-125KBL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
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| IS43TR16128DL-107MBL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2G, 1.5V, DDR3, 128Mx16, 1866MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
Description: 2G, 1.5V, DDR3, 128Mx16, 1866MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
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| IS43TR82560D-107MBLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2G, 1.5V, DDR3L, 256Mx8, 1866MT/
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
Description: 2G, 1.5V, DDR3L, 256Mx8, 1866MT/
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
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| IS43TR82560D-107MBL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2G, 1.5V, DDR3L, 256Mx8, 1866MT/
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
Description: 2G, 1.5V, DDR3L, 256Mx8, 1866MT/
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
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| IS43TR82560D-107MBLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2G, 1.5V, DDR3L, 256Mx8, 1866MT/
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
Description: 2G, 1.5V, DDR3L, 256Mx8, 1866MT/
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
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| IS43TR82560DL-107MBL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
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| IS43TR82560CL-125KBL |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
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| IS43TR82560DL-107MBL |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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| IS43TR82560DL-107MBLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
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| IS43TR16128CL-125KBL |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 96TWBGA
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
Description: IC DRAM 2GBIT PARALLEL 96TWBGA
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
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| IS43TR82560DL-107MBLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
Description: 2G, 1.35V, DDR3L, 256Mx8, 1866MT
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
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| IS43TR82560CL-125KBL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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| IS46TR16128DL-107MBLA1-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: Automotive (Tc: -40 to +95C), 2G
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
Description: Automotive (Tc: -40 to +95C), 2G
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
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| IS46TR16128DL-107MBLA1 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: Automotive (Tc: -40 to +95C), 2G
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
Description: Automotive (Tc: -40 to +95C), 2G
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
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| IS61WV6416EEBLL-10KLI |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 1Mb,High-Speed/Low Power,Async w
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
Description: 1Mb,High-Speed/Low Power,Async w
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
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| IS25WP256E-RHLA3 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 256Mb QPI/QSPI, 24-ball TFBGA 6x
Memory Organization: 32M x 8
Access Time: 5.5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 50µs, 1ms
Part Status: Active
Supplier Device Package: 24-TFBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Bulk
Description: 256Mb QPI/QSPI, 24-ball TFBGA 6x
Memory Organization: 32M x 8
Access Time: 5.5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 50µs, 1ms
Part Status: Active
Supplier Device Package: 24-TFBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Bulk
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| IS25WP064D-JBLE-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 64Mb QPI/QSPI, 8-pin SOP 208Mil,
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 40µs, 800µs
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: 64Mb QPI/QSPI, 8-pin SOP 208Mil,
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 40µs, 800µs
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| IS25WP020E-JYLE-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 2Mb QSPI, 8-pin USON 2x3mm , RoH
Memory Organization: 256K x 8
Access Time: 8 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 40µs, 1.2ms
Part Status: Active
Supplier Device Package: 8-USON (2x3)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: 2Mb QSPI, 8-pin USON 2x3mm , RoH
Memory Organization: 256K x 8
Access Time: 8 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 40µs, 1.2ms
Part Status: Active
Supplier Device Package: 8-USON (2x3)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| IS25LP032D-JNLA3-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 32Mb QSPI, 8-pin SOP 150Mil, RoH
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 4M x 8
Access Time: 7 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 40µs, 800µs
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Description: 32Mb QSPI, 8-pin SOP 150Mil, RoH
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 4M x 8
Access Time: 7 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 40µs, 800µs
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
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| IS25WP128F-JBLA3-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Write Cycle Time - Word, Page: 40µs, 800µs
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 16M x 8
Access Time: 5.5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Write Cycle Time - Word, Page: 40µs, 800µs
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 16M x 8
Access Time: 5.5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
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| IS25WE256E-RHLA3-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 256MBIT SPI/OCT
Memory Organization: 32M x 8
Access Time: 5.5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 50µs, 1ms
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Part Status: Active
Supplier Device Package: 24-TFBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 256MBIT SPI/OCT
Memory Organization: 32M x 8
Access Time: 5.5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 50µs, 1ms
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Part Status: Active
Supplier Device Package: 24-TFBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
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