Продукція > LITTELFUSE > Всі товари виробника LITTELFUSE (114370) > Сторінка 1886 з 1907
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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30KPA84CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 93.8V; 217.7A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 84V Breakdown voltage: 93.8V Max. forward impulse current: 217.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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| 30KPA320CA | LITTELFUSE |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 357.4V; bidirectional; P600; reel,tape; 30kW; 30KPA Type of diode: TVS Max. off-state voltage: 320V Breakdown voltage: 357.4V Semiconductor structure: bidirectional Case: P600 Mounting: THT Kind of package: reel; tape Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
| 30KPA350CA | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 391V; 53.4A; bidirectional; P600; reel,tape; 30kW; 30KPA Type of diode: TVS Max. off-state voltage: 350V Breakdown voltage: 391V Max. forward impulse current: 53.4A Semiconductor structure: bidirectional Case: P600 Mounting: THT Kind of package: reel; tape Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
| 30KPA350A | LITTELFUSE |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 30kW; 391V; 53.4A; unidirectional; P600; reel,tape; Ch: 1 Type of diode: TVS Max. off-state voltage: 350V Breakdown voltage: 391V Max. forward impulse current: 53.4A Semiconductor structure: unidirectional Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
| 30KPA360A | LITTELFUSE |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 30kW; 402.1V; 47.3A; unidirectional; P600; reel,tape Type of diode: TVS Max. off-state voltage: 360V Breakdown voltage: 402.1V Max. forward impulse current: 47.3A Semiconductor structure: unidirectional Case: P600 Mounting: THT Kind of package: reel; tape Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
| 30KPA360CA | LITTELFUSE |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 402.1V; 47.3A; bidirectional; P600; reel,tape; 30kW Type of diode: TVS Max. off-state voltage: 360V Breakdown voltage: 402.1V Max. forward impulse current: 47.3A Semiconductor structure: bidirectional Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
| 30KPA320A | LITTELFUSE |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 30kW; 357.4V; 57.2A; unidirectional; P600; reel,tape Type of diode: TVS Max. off-state voltage: 320V Breakdown voltage: 357.4V Max. forward impulse current: 57.2A Semiconductor structure: unidirectional Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
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30KPA90CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 105.5V; 207A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA Type of diode: TVS Max. off-state voltage: 90V Breakdown voltage: 105.5V Max. forward impulse current: 207A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA102CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA Type of diode: TVS Max. off-state voltage: 102V Breakdown voltage: 119.6V Max. forward impulse current: 183A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA150CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA Type of diode: TVS Max. off-state voltage: 150V Breakdown voltage: 176V Max. forward impulse current: 129.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA156CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA Type of diode: TVS Max. off-state voltage: 156V Breakdown voltage: 183V Max. forward impulse current: 123.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA160CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA Type of diode: TVS Max. off-state voltage: 160V Breakdown voltage: 187.6V Max. forward impulse current: 120A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA58CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 68V; 327.9A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA Type of diode: TVS Max. off-state voltage: 58V Breakdown voltage: 68V Max. forward impulse current: 327.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 40µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA70CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 82.1V; 278A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA Type of diode: TVS Max. off-state voltage: 70V Breakdown voltage: 82.1V Max. forward impulse current: 278A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA54CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 63.3V; 331.5A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 54V Breakdown voltage: 63.3V Max. forward impulse current: 331.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 40µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA33CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 38.7V; 517.9A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 33V Breakdown voltage: 38.7V Max. forward impulse current: 517.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 10mA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA120CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 140.7V; 155.9A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 120V Breakdown voltage: 140.7V Max. forward impulse current: 155.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA30CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 35.2V; 548.9A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 30V Breakdown voltage: 35.2V Max. forward impulse current: 548.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 10mA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA51CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 59.9V; 350.7A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 51V Breakdown voltage: 59.9V Max. forward impulse current: 350.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 0.1mA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA102CA | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; reel,tape; 30kW Type of diode: TVS Max. off-state voltage: 102V Breakdown voltage: 119.6V Max. forward impulse current: 183A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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30KPA108CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 108V Breakdown voltage: 126.6V Max. forward impulse current: 172.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA132CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 132V Breakdown voltage: 154.8V Max. forward impulse current: 142.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA144CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 168.8V; 135.8A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 144V Breakdown voltage: 168.8V Max. forward impulse current: 135.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA150CA | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; reel,tape; 30kW Type of diode: TVS Max. off-state voltage: 150V Breakdown voltage: 176V Max. forward impulse current: 129.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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30KPA156CA | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; reel,tape; 30kW Type of diode: TVS Max. off-state voltage: 156V Breakdown voltage: 183V Max. forward impulse current: 123.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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30KPA160CA | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; reel,tape; 30kW Type of diode: TVS Max. off-state voltage: 160V Breakdown voltage: 187.6V Max. forward impulse current: 120A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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30KPA168CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 197.1V; 111.2A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 168V Breakdown voltage: 197.1V Max. forward impulse current: 111.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA170CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 170V Breakdown voltage: 199.4V Max. forward impulse current: 110.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA180CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 211.2V; 104.3A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 180V Breakdown voltage: 211.2V Max. forward impulse current: 104.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA198CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 232.3V; 94.7A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 198V Breakdown voltage: 232.3V Max. forward impulse current: 94.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA240CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 281.5V; 78.3A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 240V Breakdown voltage: 281.5V Max. forward impulse current: 78.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA260CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 304.9V; 72.8A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 260V Breakdown voltage: 304.9V Max. forward impulse current: 72.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30KPA48CA | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 56.3V; 371.3A; bidirectional; ±5%; P600; reel,tape; 30kW Type of diode: TVS Max. off-state voltage: 48V Breakdown voltage: 56.3V Max. forward impulse current: 371.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 0.3mA Kind of package: reel; tape Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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30KPA48CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 56.3V; 371.3A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 48V Breakdown voltage: 56.3V Max. forward impulse current: 371.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 0.3mA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MAC4DCN-1G | LITTELFUSE |
Category: TriacsDescription: Triac; 800V; 4A; IPAK; Igt: 35mA; Ifsm: 40A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: IPAK Gate current: 35mA Max. forward impulse current: 40A Mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
| MAC4DLM-1G | LITTELFUSE |
Category: TriacsDescription: Triac; 600V; 4A; IPAK; Igt: 3mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: IPAK Gate current: 3mA Mounting: THT Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||
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MAC4DLMT4G | LITTELFUSE |
Category: TriacsDescription: Triac; 600V; 4A; DPAK; Igt: 3mA; Ifsm: 40A; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 3mA Max. forward impulse current: 40A Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| MAC4DSM-1G | LITTELFUSE |
Category: TriacsDescription: Triac; 600V; 4A; DPAK; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 10mA Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||
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MAC4DSMT4G | LITTELFUSE |
Category: TriacsDescription: Triac; 600V; 4A; DPAK; Igt: 10mA; Ifsm: 40A; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 10mA Max. forward impulse current: 40A Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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MAC4DSNT4G | LITTELFUSE |
Category: TriacsDescription: Triac; 800V; 4A; DPAK; Igt: 10mA; Ifsm: 40A; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 10mA Max. forward impulse current: 40A Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB22A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 22V; 19.9A; unidirectional; ±5%; DO214AA; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 19.9A Semiconductor structure: unidirectional Case: DO214AA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P6SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB22A-E | LITTELFUSE |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 20.9V; unidirectional; DO214AA,SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Breakdown voltage: 20.9V Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Number of channels: 1 Manufacturer series: P6SMB |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
SZP6SMB22AT3G | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 20.9V; 20A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Breakdown voltage: 20.9V Max. forward impulse current: 20A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Number of channels: 1 Capacitance: 835pF |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
V18MLA0603NH | LITTELFUSE |
Category: SMD varistorsDescription: Varistor: multilayer; SMD; 0603; 14VAC; 18VDC; 30A; 28V; 2500pcs. Type of varistor: multilayer Mounting: SMD Case - inch: 0603 Case - mm: 1608 Max. operating voltage: 14V AC; 18V DC Varistor max current 8/20µs: 30A Varistor voltage: 28V Operating temperature: -55...125°C Quantity in set/package: 2500pcs. |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
V18MLA0603NHAUTO | LITTELFUSE |
Category: SMD varistorsDescription: Varistor: multilayer; SMD; 0603; 14VAC; 18VDC; 30A; 28V Type of varistor: multilayer Mounting: SMD Case - inch: 0603 Case - mm: 1608 Max. operating voltage: 14V AC; 18V DC Varistor max current 8/20µs: 30A Varistor voltage: 28V Conform to the norm: AEC-Q200 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| P6SMB150A-E | LITTELFUSE |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 143V; unidirectional; DO214AA,SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 143V Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Number of channels: 1 Manufacturer series: P6SMB |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SZP6SMB150AT3G | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 143V; 2.9A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 143V Max. forward impulse current: 2.9A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Number of channels: 1 Capacitance: 0.15nF |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
|
SMAJ17A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; ±5%; DO214AC; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Case: DO214AC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ Tolerance: ±5% Features of semiconductor devices: glass passivated |
на замовлення 2199 шт: термін постачання 14-30 дні (днів) |
|
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| PSR031DL0700Z | LITTELFUSE |
Category: NH FusesDescription: Fuse: fuse; ceramic,industrial; 700A; 690VAC; 600VDC; ultra rapid Type of fuse: fuse Kind of fuse: ceramic; industrial Current rating: 700A Rated voltage: 600V DC; 690V AC Fuse characteristics: ultra rapid Fuse size: 51.5x51.5x49.2mm Manufacturer series: PSR Trade name: POWR-SPEED® Breaking capacity: 200kA Fuses application: semiconductors protection Power dissipation: 93W Operating temperature: -55...125°C Related items: MS3H1000C |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||
| PSR032DL0700X | LITTELFUSE |
Category: NH FusesDescription: Fuse: fuse; ceramic,industrial; 700A; 690VAC; 600VDC; ultra rapid Type of fuse: fuse Kind of fuse: ceramic; industrial Current rating: 700A Rated voltage: 600V DC; 690V AC Fuse characteristics: ultra rapid Fuse size: 60x60x49.2mm Manufacturer series: PSR Trade name: POWR-SPEED® Breaking capacity: 200kA Fuses application: semiconductors protection Power dissipation: 127W Operating temperature: -55...125°C Related items: MS3H1000C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSR033DL0700X | LITTELFUSE |
Category: NH FusesDescription: Fuse: fuse; ceramic,industrial; 700A; 690VAC; 600VDC; ultra rapid Type of fuse: fuse Kind of fuse: ceramic; industrial Current rating: 700A Rated voltage: 600V DC; 690V AC Fuse characteristics: ultra rapid Fuse size: 73.5x73.5x50.2mm Manufacturer series: PSR Trade name: POWR-SPEED® Breaking capacity: 200kA Fuses application: semiconductors protection Power dissipation: 116W Operating temperature: -55...125°C Related items: MS3H1000C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 0154.062DR | LITTELFUSE |
Category: SMD Fuses with Holder - FastDescription: Fuse: fuse; 62mA; 125VAC; 125V; 125VDC; quick blow; SMD; 154 Mounting: SMD Operating temperature: -55...125°C Type of fuse: fuse Contact plating: silver plated Fuse characteristics: quick blow Fuse size: 9.73x5.03x3.81mm Current rating: 62mA Rated voltage: 0.125kV; 125V AC; 125V DC Manufacturer series: 154 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 0157.062DR | LITTELFUSE |
Category: SMD Fuses with Holder - Ultra FastDescription: Fuse: fuse; ceramic; 62mA; 125VAC; 125V; 32VDC,125VDC; ultra rapid Mounting: SMD Operating temperature: -55...125°C Kind of fuse: ceramic Type of fuse: fuse Contact plating: tinned Trade name: NANO2® Fuse characteristics: ultra rapid Current rating: 62mA Breaking characteristics: 1In: min 4h; 2In: max 5s Rated voltage: 32V DC; 0.125kV; 125V AC; 125V DC Breaking capacity: 50A Manufacturer series: 157 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||
|
Q8006RH4TP | LITTELFUSE |
Category: TriacsDescription: Triac; 800V; 6A; TO220-3; Igt: 35mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220-3 Gate current: 35mA Mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
S4020LTP | LITTELFUSE |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 20A; 12.8A; Igt: 30mA; TO220ABIns; THT; tube Case: TO220ABIns Features of semiconductor devices: glass passivated Mounting: THT Kind of package: tube Type of thyristor: thyristor Gate current: 30mA Load current: 12.8A Max. load current: 20A Max. off-state voltage: 0.4kV |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
| 20101000531 | LITTELFUSE |
Category: Fuses 5x20mm - Medium Time-LagDescription: Fuse: fuse; glass; 100mA; 250VAC; medium time-lag; 5.9x21mm; THT Manufacturer series: 201 Contact material: brass Kind of package: reel; tape Type of fuse: fuse Kind of fuse: glass Mounting: THT Fuse characteristics: medium time-lag Contact plating: nickel plated Operating temperature: -25...70°C Fuse size: 5.9x21mm Energy I2t: 0.031A2s Current rating: 0.1A Voltage drop: 0.5V Breaking characteristics: 1In: min 1h; 2.1In: max 600s; 4In: min 40ms; 4In: max 2s; 10In: min 5ms; 10In: max 90ms Resistance: 3.55Ω Breaking capacity: 80A Quantity in set/package: 1250pcs. Rated voltage: 250V AC Conform to the norm: cULus |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | |||||||||||||||
| 20101000531P | LITTELFUSE |
Category: Fuses 5x20mm - Medium Time-LagDescription: Fuse: fuse; glass; 100mA; 250VAC; medium time-lag; 5.2x20mm; 201 Manufacturer series: 201 Contact material: brass Kind of package: reel; tape Type of fuse: fuse Kind of fuse: glass Mounting: holders; THT Fuse characteristics: medium time-lag Contact plating: nickel plated Operating temperature: -25...70°C Fuse size: 5.2x20mm Energy I2t: 0.031A2s Current rating: 0.1A Voltage drop: 0.5V Breaking characteristics: 1In: min 1h; 2.1In: max 600s; 4In: min 40ms; 4In: max 2s; 10In: min 5ms; 10In: max 90ms Resistance: 3.55Ω Breaking capacity: 80A Quantity in set/package: 1250pcs. Rated voltage: 250V AC Conform to the norm: cULus |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | |||||||||||||||
|
30R500UF | LITTELFUSE |
Category: THT Polymer FusesDescription: Fuse: PTC polymer; 5A; THT; 30R Mounting: THT Manufacturer series: 30R Operating temperature: -40...85°C Max surge current: 40A Type of fuse: PTC polymer Current rating: 5A C dimension: 10.2mm E dimension: 3mm Max resistance: 50mΩ Min. resistance: 10mΩ D dimension: 7.6mm Switched current: 10A B dimension: 25.6mm A dimension: 14mm Power: 3W Max. voltage: 30V DC |
на замовлення 42 шт: термін постачання 14-30 дні (днів) |
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| 153.0020.5502 | LITTELFUSE |
Category: Other Car Fuses Description: Fuse: fuse; automotive; 50A; 32VDC; medium time-lag; BF1; copper Type of fuse: fuse Kind of fuse: automotive Current rating: 50A Rated voltage: 32V DC Fuse characteristics: medium time-lag Manufacturer series: BF1 Breaking capacity: 2kA / 32V DC Contact material: copper Contact plating: tinned Operating temperature: -40...125°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
| SP1015-04WTG | LITTELFUSE |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; bidirectional; ESD; flip chip4; Ch: 4 Type of diode: TVS array Breakdown voltage: 5.5V Semiconductor structure: bidirectional Version: ESD Mounting: SMD Case: flip chip4 Max. off-state voltage: 5V Leakage current: 0.1µA Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| 30KPA84CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 93.8V; 217.7A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 84V
Breakdown voltage: 93.8V
Max. forward impulse current: 217.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 93.8V; 217.7A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 84V
Breakdown voltage: 93.8V
Max. forward impulse current: 217.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 738.81 грн |
| 30KPA320CA |
Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 357.4V; bidirectional; P600; reel,tape; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 320V
Breakdown voltage: 357.4V
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 357.4V; bidirectional; P600; reel,tape; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 320V
Breakdown voltage: 357.4V
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| 30KPA350CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 391V; 53.4A; bidirectional; P600; reel,tape; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 350V
Breakdown voltage: 391V
Max. forward impulse current: 53.4A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 391V; 53.4A; bidirectional; P600; reel,tape; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 350V
Breakdown voltage: 391V
Max. forward impulse current: 53.4A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| 30KPA350A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 30kW; 391V; 53.4A; unidirectional; P600; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 350V
Breakdown voltage: 391V
Max. forward impulse current: 53.4A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 30kW; 391V; 53.4A; unidirectional; P600; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 350V
Breakdown voltage: 391V
Max. forward impulse current: 53.4A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| 30KPA360A |
Виробник: LITTELFUSE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 30kW; 402.1V; 47.3A; unidirectional; P600; reel,tape
Type of diode: TVS
Max. off-state voltage: 360V
Breakdown voltage: 402.1V
Max. forward impulse current: 47.3A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 30kW; 402.1V; 47.3A; unidirectional; P600; reel,tape
Type of diode: TVS
Max. off-state voltage: 360V
Breakdown voltage: 402.1V
Max. forward impulse current: 47.3A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| 30KPA360CA |
Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 402.1V; 47.3A; bidirectional; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 360V
Breakdown voltage: 402.1V
Max. forward impulse current: 47.3A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 402.1V; 47.3A; bidirectional; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 360V
Breakdown voltage: 402.1V
Max. forward impulse current: 47.3A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| 30KPA320A |
Виробник: LITTELFUSE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 30kW; 357.4V; 57.2A; unidirectional; P600; reel,tape
Type of diode: TVS
Max. off-state voltage: 320V
Breakdown voltage: 357.4V
Max. forward impulse current: 57.2A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 30kW; 357.4V; 57.2A; unidirectional; P600; reel,tape
Type of diode: TVS
Max. off-state voltage: 320V
Breakdown voltage: 357.4V
Max. forward impulse current: 57.2A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| 30KPA90CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 105.5V; 207A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 90V
Breakdown voltage: 105.5V
Max. forward impulse current: 207A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 105.5V; 207A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 90V
Breakdown voltage: 105.5V
Max. forward impulse current: 207A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 30KPA102CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 119.6V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 119.6V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 30KPA150CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 30KPA156CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 30KPA160CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA58CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; 327.9A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 58V
Breakdown voltage: 68V
Max. forward impulse current: 327.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 40µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; 327.9A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 58V
Breakdown voltage: 68V
Max. forward impulse current: 327.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 40µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA70CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82.1V; 278A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 70V
Breakdown voltage: 82.1V
Max. forward impulse current: 278A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82.1V; 278A; bidirectional; ±5%; P600; bulk; 30kW; 30KPA
Type of diode: TVS
Max. off-state voltage: 70V
Breakdown voltage: 82.1V
Max. forward impulse current: 278A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA54CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 63.3V; 331.5A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 54V
Breakdown voltage: 63.3V
Max. forward impulse current: 331.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 40µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 63.3V; 331.5A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 54V
Breakdown voltage: 63.3V
Max. forward impulse current: 331.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 40µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA33CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 38.7V; 517.9A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 38.7V
Max. forward impulse current: 517.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 10mA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 38.7V; 517.9A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 38.7V
Max. forward impulse current: 517.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 10mA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA120CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 140.7V; 155.9A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 120V
Breakdown voltage: 140.7V
Max. forward impulse current: 155.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 140.7V; 155.9A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 120V
Breakdown voltage: 140.7V
Max. forward impulse current: 155.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA30CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 35.2V; 548.9A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 30V
Breakdown voltage: 35.2V
Max. forward impulse current: 548.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 10mA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 35.2V; 548.9A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 30V
Breakdown voltage: 35.2V
Max. forward impulse current: 548.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 10mA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA51CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 59.9V; 350.7A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 51V
Breakdown voltage: 59.9V
Max. forward impulse current: 350.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 0.1mA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 59.9V; 350.7A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 51V
Breakdown voltage: 59.9V
Max. forward impulse current: 350.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 0.1mA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA102CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 119.6V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 119.6V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 800 шт
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| 30KPA108CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 108V
Breakdown voltage: 126.6V
Max. forward impulse current: 172.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 108V
Breakdown voltage: 126.6V
Max. forward impulse current: 172.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA132CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 132V
Breakdown voltage: 154.8V
Max. forward impulse current: 142.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 132V
Breakdown voltage: 154.8V
Max. forward impulse current: 142.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA144CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 168.8V; 135.8A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 144V
Breakdown voltage: 168.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 168.8V; 135.8A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 144V
Breakdown voltage: 168.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA150CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 800 шт
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| 30KPA156CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 800 шт
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| 30KPA160CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 800 шт
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| 30KPA168CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 197.1V; 111.2A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 168V
Breakdown voltage: 197.1V
Max. forward impulse current: 111.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 197.1V; 111.2A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 168V
Breakdown voltage: 197.1V
Max. forward impulse current: 111.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA170CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA180CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 211.2V; 104.3A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 180V
Breakdown voltage: 211.2V
Max. forward impulse current: 104.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 211.2V; 104.3A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 180V
Breakdown voltage: 211.2V
Max. forward impulse current: 104.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA198CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 232.3V; 94.7A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 198V
Breakdown voltage: 232.3V
Max. forward impulse current: 94.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 232.3V; 94.7A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 198V
Breakdown voltage: 232.3V
Max. forward impulse current: 94.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA240CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 281.5V; 78.3A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 240V
Breakdown voltage: 281.5V
Max. forward impulse current: 78.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 281.5V; 78.3A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 240V
Breakdown voltage: 281.5V
Max. forward impulse current: 78.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA260CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 304.9V; 72.8A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 260V
Breakdown voltage: 304.9V
Max. forward impulse current: 72.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 304.9V; 72.8A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 260V
Breakdown voltage: 304.9V
Max. forward impulse current: 72.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| 30KPA48CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 56.3V; 371.3A; bidirectional; ±5%; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 48V
Breakdown voltage: 56.3V
Max. forward impulse current: 371.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 0.3mA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 56.3V; 371.3A; bidirectional; ±5%; P600; reel,tape; 30kW
Type of diode: TVS
Max. off-state voltage: 48V
Breakdown voltage: 56.3V
Max. forward impulse current: 371.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 0.3mA
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 800 шт
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| 30KPA48CA-B |
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Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 56.3V; 371.3A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 48V
Breakdown voltage: 56.3V
Max. forward impulse current: 371.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 0.3mA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 56.3V; 371.3A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 48V
Breakdown voltage: 56.3V
Max. forward impulse current: 371.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 0.3mA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
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| MAC4DCN-1G |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 800V; 4A; IPAK; Igt: 35mA; Ifsm: 40A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: IPAK
Gate current: 35mA
Max. forward impulse current: 40A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; IPAK; Igt: 35mA; Ifsm: 40A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: IPAK
Gate current: 35mA
Max. forward impulse current: 40A
Mounting: THT
Kind of package: tube
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Мінімальне замовлення: 4000 шт
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| MAC4DLM-1G |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 3mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 3mA
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 3mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 3mA
Mounting: THT
Kind of package: reel; tape
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Мінімальне замовлення: 4000 шт
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| MAC4DLMT4G |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 3mA; Ifsm: 40A; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 3mA
Max. forward impulse current: 40A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 3mA; Ifsm: 40A; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 3mA
Max. forward impulse current: 40A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| MAC4DSM-1G |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| MAC4DSMT4G |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 10mA; Ifsm: 40A; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 40A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 10mA; Ifsm: 40A; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 40A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| MAC4DSNT4G |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 10mA; Ifsm: 40A; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 40A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 10mA; Ifsm: 40A; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 40A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| P6SMB22A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 19.9A; unidirectional; ±5%; DO214AA; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 19.9A
Semiconductor structure: unidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 19.9A; unidirectional; ±5%; DO214AA; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 19.9A
Semiconductor structure: unidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
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| P6SMB22A-E |
Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20.9V; unidirectional; DO214AA,SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20.9V; unidirectional; DO214AA,SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: P6SMB
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Мінімальне замовлення: 3000 шт
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| SZP6SMB22AT3G |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20.9V; 20A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Number of channels: 1
Capacitance: 835pF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20.9V; 20A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Number of channels: 1
Capacitance: 835pF
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Мінімальне замовлення: 2500 шт
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| V18MLA0603NH |
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Виробник: LITTELFUSE
Category: SMD varistors
Description: Varistor: multilayer; SMD; 0603; 14VAC; 18VDC; 30A; 28V; 2500pcs.
Type of varistor: multilayer
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Max. operating voltage: 14V AC; 18V DC
Varistor max current 8/20µs: 30A
Varistor voltage: 28V
Operating temperature: -55...125°C
Quantity in set/package: 2500pcs.
Category: SMD varistors
Description: Varistor: multilayer; SMD; 0603; 14VAC; 18VDC; 30A; 28V; 2500pcs.
Type of varistor: multilayer
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Max. operating voltage: 14V AC; 18V DC
Varistor max current 8/20µs: 30A
Varistor voltage: 28V
Operating temperature: -55...125°C
Quantity in set/package: 2500pcs.
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Мінімальне замовлення: 2500 шт
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| V18MLA0603NHAUTO |
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Виробник: LITTELFUSE
Category: SMD varistors
Description: Varistor: multilayer; SMD; 0603; 14VAC; 18VDC; 30A; 28V
Type of varistor: multilayer
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Max. operating voltage: 14V AC; 18V DC
Varistor max current 8/20µs: 30A
Varistor voltage: 28V
Conform to the norm: AEC-Q200
Operating temperature: -55...125°C
Category: SMD varistors
Description: Varistor: multilayer; SMD; 0603; 14VAC; 18VDC; 30A; 28V
Type of varistor: multilayer
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Max. operating voltage: 14V AC; 18V DC
Varistor max current 8/20µs: 30A
Varistor voltage: 28V
Conform to the norm: AEC-Q200
Operating temperature: -55...125°C
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Мінімальне замовлення: 2500 шт
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| P6SMB150A-E |
Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 143V; unidirectional; DO214AA,SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 143V; unidirectional; DO214AA,SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: P6SMB
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Мінімальне замовлення: 3000 шт
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| SZP6SMB150AT3G |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 143V; 2.9A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Number of channels: 1
Capacitance: 0.15nF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 143V; 2.9A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Number of channels: 1
Capacitance: 0.15nF
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| SMAJ17A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; ±5%; DO214AC; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; ±5%; DO214AC; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: DO214AC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Features of semiconductor devices: glass passivated
на замовлення 2199 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.74 грн |
| 30+ | 13.84 грн |
| 34+ | 12.35 грн |
| 100+ | 7.47 грн |
| 500+ | 5.25 грн |
| 1000+ | 4.99 грн |
| 1300+ | 4.88 грн |
| PSR031DL0700Z |
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Виробник: LITTELFUSE
Category: NH Fuses
Description: Fuse: fuse; ceramic,industrial; 700A; 690VAC; 600VDC; ultra rapid
Type of fuse: fuse
Kind of fuse: ceramic; industrial
Current rating: 700A
Rated voltage: 600V DC; 690V AC
Fuse characteristics: ultra rapid
Fuse size: 51.5x51.5x49.2mm
Manufacturer series: PSR
Trade name: POWR-SPEED®
Breaking capacity: 200kA
Fuses application: semiconductors protection
Power dissipation: 93W
Operating temperature: -55...125°C
Related items: MS3H1000C
Category: NH Fuses
Description: Fuse: fuse; ceramic,industrial; 700A; 690VAC; 600VDC; ultra rapid
Type of fuse: fuse
Kind of fuse: ceramic; industrial
Current rating: 700A
Rated voltage: 600V DC; 690V AC
Fuse characteristics: ultra rapid
Fuse size: 51.5x51.5x49.2mm
Manufacturer series: PSR
Trade name: POWR-SPEED®
Breaking capacity: 200kA
Fuses application: semiconductors protection
Power dissipation: 93W
Operating temperature: -55...125°C
Related items: MS3H1000C
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Мінімальне замовлення: 3 шт
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| PSR032DL0700X |
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Виробник: LITTELFUSE
Category: NH Fuses
Description: Fuse: fuse; ceramic,industrial; 700A; 690VAC; 600VDC; ultra rapid
Type of fuse: fuse
Kind of fuse: ceramic; industrial
Current rating: 700A
Rated voltage: 600V DC; 690V AC
Fuse characteristics: ultra rapid
Fuse size: 60x60x49.2mm
Manufacturer series: PSR
Trade name: POWR-SPEED®
Breaking capacity: 200kA
Fuses application: semiconductors protection
Power dissipation: 127W
Operating temperature: -55...125°C
Related items: MS3H1000C
Category: NH Fuses
Description: Fuse: fuse; ceramic,industrial; 700A; 690VAC; 600VDC; ultra rapid
Type of fuse: fuse
Kind of fuse: ceramic; industrial
Current rating: 700A
Rated voltage: 600V DC; 690V AC
Fuse characteristics: ultra rapid
Fuse size: 60x60x49.2mm
Manufacturer series: PSR
Trade name: POWR-SPEED®
Breaking capacity: 200kA
Fuses application: semiconductors protection
Power dissipation: 127W
Operating temperature: -55...125°C
Related items: MS3H1000C
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| PSR033DL0700X |
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Виробник: LITTELFUSE
Category: NH Fuses
Description: Fuse: fuse; ceramic,industrial; 700A; 690VAC; 600VDC; ultra rapid
Type of fuse: fuse
Kind of fuse: ceramic; industrial
Current rating: 700A
Rated voltage: 600V DC; 690V AC
Fuse characteristics: ultra rapid
Fuse size: 73.5x73.5x50.2mm
Manufacturer series: PSR
Trade name: POWR-SPEED®
Breaking capacity: 200kA
Fuses application: semiconductors protection
Power dissipation: 116W
Operating temperature: -55...125°C
Related items: MS3H1000C
Category: NH Fuses
Description: Fuse: fuse; ceramic,industrial; 700A; 690VAC; 600VDC; ultra rapid
Type of fuse: fuse
Kind of fuse: ceramic; industrial
Current rating: 700A
Rated voltage: 600V DC; 690V AC
Fuse characteristics: ultra rapid
Fuse size: 73.5x73.5x50.2mm
Manufacturer series: PSR
Trade name: POWR-SPEED®
Breaking capacity: 200kA
Fuses application: semiconductors protection
Power dissipation: 116W
Operating temperature: -55...125°C
Related items: MS3H1000C
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| 0154.062DR |
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Виробник: LITTELFUSE
Category: SMD Fuses with Holder - Fast
Description: Fuse: fuse; 62mA; 125VAC; 125V; 125VDC; quick blow; SMD; 154
Mounting: SMD
Operating temperature: -55...125°C
Type of fuse: fuse
Contact plating: silver plated
Fuse characteristics: quick blow
Fuse size: 9.73x5.03x3.81mm
Current rating: 62mA
Rated voltage: 0.125kV; 125V AC; 125V DC
Manufacturer series: 154
Category: SMD Fuses with Holder - Fast
Description: Fuse: fuse; 62mA; 125VAC; 125V; 125VDC; quick blow; SMD; 154
Mounting: SMD
Operating temperature: -55...125°C
Type of fuse: fuse
Contact plating: silver plated
Fuse characteristics: quick blow
Fuse size: 9.73x5.03x3.81mm
Current rating: 62mA
Rated voltage: 0.125kV; 125V AC; 125V DC
Manufacturer series: 154
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| 0157.062DR |
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Виробник: LITTELFUSE
Category: SMD Fuses with Holder - Ultra Fast
Description: Fuse: fuse; ceramic; 62mA; 125VAC; 125V; 32VDC,125VDC; ultra rapid
Mounting: SMD
Operating temperature: -55...125°C
Kind of fuse: ceramic
Type of fuse: fuse
Contact plating: tinned
Trade name: NANO2®
Fuse characteristics: ultra rapid
Current rating: 62mA
Breaking characteristics: 1In: min 4h; 2In: max 5s
Rated voltage: 32V DC; 0.125kV; 125V AC; 125V DC
Breaking capacity: 50A
Manufacturer series: 157
Category: SMD Fuses with Holder - Ultra Fast
Description: Fuse: fuse; ceramic; 62mA; 125VAC; 125V; 32VDC,125VDC; ultra rapid
Mounting: SMD
Operating temperature: -55...125°C
Kind of fuse: ceramic
Type of fuse: fuse
Contact plating: tinned
Trade name: NANO2®
Fuse characteristics: ultra rapid
Current rating: 62mA
Breaking characteristics: 1In: min 4h; 2In: max 5s
Rated voltage: 32V DC; 0.125kV; 125V AC; 125V DC
Breaking capacity: 50A
Manufacturer series: 157
товару немає в наявності
Мінімальне замовлення: 1500 шт
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| Q8006RH4TP |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 800V; 6A; TO220-3; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220-3
Gate current: 35mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220-3; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220-3
Gate current: 35mA
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| S4020LTP |
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Виробник: LITTELFUSE
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 20A; 12.8A; Igt: 30mA; TO220ABIns; THT; tube
Case: TO220ABIns
Features of semiconductor devices: glass passivated
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
Load current: 12.8A
Max. load current: 20A
Max. off-state voltage: 0.4kV
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 20A; 12.8A; Igt: 30mA; TO220ABIns; THT; tube
Case: TO220ABIns
Features of semiconductor devices: glass passivated
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
Load current: 12.8A
Max. load current: 20A
Max. off-state voltage: 0.4kV
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 20101000531 |
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Виробник: LITTELFUSE
Category: Fuses 5x20mm - Medium Time-Lag
Description: Fuse: fuse; glass; 100mA; 250VAC; medium time-lag; 5.9x21mm; THT
Manufacturer series: 201
Contact material: brass
Kind of package: reel; tape
Type of fuse: fuse
Kind of fuse: glass
Mounting: THT
Fuse characteristics: medium time-lag
Contact plating: nickel plated
Operating temperature: -25...70°C
Fuse size: 5.9x21mm
Energy I2t: 0.031A2s
Current rating: 0.1A
Voltage drop: 0.5V
Breaking characteristics: 1In: min 1h; 2.1In: max 600s; 4In: min 40ms; 4In: max 2s; 10In: min 5ms; 10In: max 90ms
Resistance: 3.55Ω
Breaking capacity: 80A
Quantity in set/package: 1250pcs.
Rated voltage: 250V AC
Conform to the norm: cULus
Category: Fuses 5x20mm - Medium Time-Lag
Description: Fuse: fuse; glass; 100mA; 250VAC; medium time-lag; 5.9x21mm; THT
Manufacturer series: 201
Contact material: brass
Kind of package: reel; tape
Type of fuse: fuse
Kind of fuse: glass
Mounting: THT
Fuse characteristics: medium time-lag
Contact plating: nickel plated
Operating temperature: -25...70°C
Fuse size: 5.9x21mm
Energy I2t: 0.031A2s
Current rating: 0.1A
Voltage drop: 0.5V
Breaking characteristics: 1In: min 1h; 2.1In: max 600s; 4In: min 40ms; 4In: max 2s; 10In: min 5ms; 10In: max 90ms
Resistance: 3.55Ω
Breaking capacity: 80A
Quantity in set/package: 1250pcs.
Rated voltage: 250V AC
Conform to the norm: cULus
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику
од. на суму грн.
| 20101000531P |
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Виробник: LITTELFUSE
Category: Fuses 5x20mm - Medium Time-Lag
Description: Fuse: fuse; glass; 100mA; 250VAC; medium time-lag; 5.2x20mm; 201
Manufacturer series: 201
Contact material: brass
Kind of package: reel; tape
Type of fuse: fuse
Kind of fuse: glass
Mounting: holders; THT
Fuse characteristics: medium time-lag
Contact plating: nickel plated
Operating temperature: -25...70°C
Fuse size: 5.2x20mm
Energy I2t: 0.031A2s
Current rating: 0.1A
Voltage drop: 0.5V
Breaking characteristics: 1In: min 1h; 2.1In: max 600s; 4In: min 40ms; 4In: max 2s; 10In: min 5ms; 10In: max 90ms
Resistance: 3.55Ω
Breaking capacity: 80A
Quantity in set/package: 1250pcs.
Rated voltage: 250V AC
Conform to the norm: cULus
Category: Fuses 5x20mm - Medium Time-Lag
Description: Fuse: fuse; glass; 100mA; 250VAC; medium time-lag; 5.2x20mm; 201
Manufacturer series: 201
Contact material: brass
Kind of package: reel; tape
Type of fuse: fuse
Kind of fuse: glass
Mounting: holders; THT
Fuse characteristics: medium time-lag
Contact plating: nickel plated
Operating temperature: -25...70°C
Fuse size: 5.2x20mm
Energy I2t: 0.031A2s
Current rating: 0.1A
Voltage drop: 0.5V
Breaking characteristics: 1In: min 1h; 2.1In: max 600s; 4In: min 40ms; 4In: max 2s; 10In: min 5ms; 10In: max 90ms
Resistance: 3.55Ω
Breaking capacity: 80A
Quantity in set/package: 1250pcs.
Rated voltage: 250V AC
Conform to the norm: cULus
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику
од. на суму грн.
| 30R500UF |
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Виробник: LITTELFUSE
Category: THT Polymer Fuses
Description: Fuse: PTC polymer; 5A; THT; 30R
Mounting: THT
Manufacturer series: 30R
Operating temperature: -40...85°C
Max surge current: 40A
Type of fuse: PTC polymer
Current rating: 5A
C dimension: 10.2mm
E dimension: 3mm
Max resistance: 50mΩ
Min. resistance: 10mΩ
D dimension: 7.6mm
Switched current: 10A
B dimension: 25.6mm
A dimension: 14mm
Power: 3W
Max. voltage: 30V DC
Category: THT Polymer Fuses
Description: Fuse: PTC polymer; 5A; THT; 30R
Mounting: THT
Manufacturer series: 30R
Operating temperature: -40...85°C
Max surge current: 40A
Type of fuse: PTC polymer
Current rating: 5A
C dimension: 10.2mm
E dimension: 3mm
Max resistance: 50mΩ
Min. resistance: 10mΩ
D dimension: 7.6mm
Switched current: 10A
B dimension: 25.6mm
A dimension: 14mm
Power: 3W
Max. voltage: 30V DC
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 32.61 грн |
| 14+ | 30.39 грн |
| 153.0020.5502 |
Виробник: LITTELFUSE
Category: Other Car Fuses
Description: Fuse: fuse; automotive; 50A; 32VDC; medium time-lag; BF1; copper
Type of fuse: fuse
Kind of fuse: automotive
Current rating: 50A
Rated voltage: 32V DC
Fuse characteristics: medium time-lag
Manufacturer series: BF1
Breaking capacity: 2kA / 32V DC
Contact material: copper
Contact plating: tinned
Operating temperature: -40...125°C
Category: Other Car Fuses
Description: Fuse: fuse; automotive; 50A; 32VDC; medium time-lag; BF1; copper
Type of fuse: fuse
Kind of fuse: automotive
Current rating: 50A
Rated voltage: 32V DC
Fuse characteristics: medium time-lag
Manufacturer series: BF1
Breaking capacity: 2kA / 32V DC
Contact material: copper
Contact plating: tinned
Operating temperature: -40...125°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SP1015-04WTG |
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Виробник: LITTELFUSE
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; bidirectional; ESD; flip chip4; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: flip chip4
Max. off-state voltage: 5V
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; bidirectional; ESD; flip chip4; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: flip chip4
Max. off-state voltage: 5V
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.













