Продукція > LITTELFUSE > Всі товари виробника LITTELFUSE (129313) > Сторінка 2117 з 2156
Фото | Назва | Виробник | Інформація |
Доступність |
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30KPA102A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 119.6V; 183A; unidirectional; ±5%; P600; reel,tape Mounting: THT Kind of package: reel; tape Peak pulse power dissipation: 30kW Case: P600 Tolerance: ±5% Max. off-state voltage: 102V Semiconductor structure: unidirectional Max. forward impulse current: 183A Breakdown voltage: 119.6V Leakage current: 2µA Type of diode: TVS Features of semiconductor devices: glass passivated |
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30KPA102CA-B | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; 30kW; bulk Mounting: THT Kind of package: bulk Peak pulse power dissipation: 30kW Case: P600 Tolerance: ±5% Max. off-state voltage: 102V Semiconductor structure: bidirectional Max. forward impulse current: 183A Breakdown voltage: 119.6V Leakage current: 2µA Type of diode: TVS Features of semiconductor devices: glass passivated |
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30KPA102CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; 30kW; reel,tape Mounting: THT Kind of package: reel; tape Peak pulse power dissipation: 30kW Case: P600 Tolerance: ±5% Max. off-state voltage: 102V Semiconductor structure: bidirectional Max. forward impulse current: 183A Breakdown voltage: 119.6V Leakage current: 2µA Type of diode: TVS Features of semiconductor devices: glass passivated |
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30KPA108A-B | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 126.6V; 172.9A; unidirectional; ±5%; P600; bulk Mounting: THT Tolerance: ±5% Max. forward impulse current: 172.9A Leakage current: 2µA Case: P600 Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Max. off-state voltage: 108V Semiconductor structure: unidirectional Breakdown voltage: 126.6V |
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30KPA108A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 126.6V; 172.9A; unidirectional; ±5%; P600 Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 108V Breakdown voltage: 126.6V Max. forward impulse current: 172.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA108CA-B | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 108V Breakdown voltage: 126.6V Max. forward impulse current: 172.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA108CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; 30kW Type of diode: TVS Max. off-state voltage: 108V Breakdown voltage: 126.6V Max. forward impulse current: 172.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA120A-B | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 140.7V; 155.9A; unidirectional; ±5%; P600; bulk Max. off-state voltage: 120V Semiconductor structure: unidirectional Max. forward impulse current: 155.9A Breakdown voltage: 140.7V Leakage current: 2µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Mounting: THT Case: P600 Tolerance: ±5% |
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30KPA120A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 140.7V; 155.9A; unidirectional; ±5%; P600 Max. off-state voltage: 120V Semiconductor structure: unidirectional Max. forward impulse current: 155.9A Breakdown voltage: 140.7V Leakage current: 2µA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Mounting: THT Case: P600 Tolerance: ±5% |
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30KPA120CA-B | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 140.7V; 155.9A; bidirectional; ±5%; P600; 30kW; bulk Max. off-state voltage: 120V Semiconductor structure: bidirectional Max. forward impulse current: 155.9A Breakdown voltage: 140.7V Leakage current: 2µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Mounting: THT Case: P600 Tolerance: ±5% |
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30KPA120CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 140.7V; 155.9A; bidirectional; ±5%; P600; 30kW Max. off-state voltage: 120V Semiconductor structure: bidirectional Max. forward impulse current: 155.9A Breakdown voltage: 140.7V Leakage current: 2µA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Mounting: THT Case: P600 Tolerance: ±5% |
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30KPA132A-B | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 154.8V; 142.3A; unidirectional; ±5%; P600; bulk Type of diode: TVS Max. off-state voltage: 132V Breakdown voltage: 154.8V Max. forward impulse current: 142.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA132A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 154.8V; 142.3A; unidirectional; ±5%; P600 Type of diode: TVS Max. off-state voltage: 132V Breakdown voltage: 154.8V Max. forward impulse current: 142.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA132CA-B | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 132V Breakdown voltage: 154.8V Max. forward impulse current: 142.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA132CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; 30kW Type of diode: TVS Max. off-state voltage: 132V Breakdown voltage: 154.8V Max. forward impulse current: 142.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA144A-B | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 168.8V; 135.8A; unidirectional; ±5%; P600; bulk Type of diode: TVS Max. off-state voltage: 144V Breakdown voltage: 168.8V Max. forward impulse current: 135.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA144A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 168.8V; 135.8A; unidirectional; ±5%; P600 Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 144V Breakdown voltage: 168.8V Max. forward impulse current: 135.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA144CA-B | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 168.8V; 135.8A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 144V Breakdown voltage: 168.8V Max. forward impulse current: 135.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA144CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 168.8V; 135.8A; bidirectional; ±5%; P600; 30kW Type of diode: TVS Max. off-state voltage: 144V Breakdown voltage: 168.8V Max. forward impulse current: 135.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA150A-B | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 176V; 129.8A; unidirectional; ±5%; P600; bulk Type of diode: TVS Max. off-state voltage: 150V Breakdown voltage: 176V Max. forward impulse current: 129.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA150A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 176V; 129.8A; unidirectional; ±5%; P600; reel,tape Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 150V Breakdown voltage: 176V Max. forward impulse current: 129.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA150CA-B | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 150V Breakdown voltage: 176V Max. forward impulse current: 129.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA150CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; 30kW; reel,tape Type of diode: TVS Max. off-state voltage: 150V Breakdown voltage: 176V Max. forward impulse current: 129.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA156A-B | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 183V; 123.7A; unidirectional; ±5%; P600; bulk Type of diode: TVS Max. off-state voltage: 156V Breakdown voltage: 183V Max. forward impulse current: 123.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA156A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 183V; 123.7A; unidirectional; ±5%; P600; reel,tape Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 156V Breakdown voltage: 183V Max. forward impulse current: 123.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA156CA-B | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 156V Breakdown voltage: 183V Max. forward impulse current: 123.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA156CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; reel,tape Type of diode: TVS Max. off-state voltage: 156V Breakdown voltage: 183V Max. forward impulse current: 123.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA160A-B | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 187.6V; 120A; unidirectional; ±5%; P600; bulk Type of diode: TVS Max. off-state voltage: 160V Breakdown voltage: 187.6V Max. forward impulse current: 120A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA160A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 187.6V; 120A; unidirectional; ±5%; P600; reel,tape Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 160V Breakdown voltage: 187.6V Max. forward impulse current: 120A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA160CA-B | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 160V Breakdown voltage: 187.6V Max. forward impulse current: 120A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA160CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; 30kW; reel,tape Type of diode: TVS Max. off-state voltage: 160V Breakdown voltage: 187.6V Max. forward impulse current: 120A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA168A-B | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 197.1V; 111.2A; unidirectional; ±5%; P600; bulk Type of diode: TVS Max. off-state voltage: 168V Breakdown voltage: 197.1V Max. forward impulse current: 111.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA168A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 197.1V; 111.2A; unidirectional; ±5%; P600 Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 168V Breakdown voltage: 197.1V Max. forward impulse current: 111.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA170A-B | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 199.4V; 110.2A; unidirectional; ±5%; P600; bulk Type of diode: TVS Max. off-state voltage: 170V Breakdown voltage: 199.4V Max. forward impulse current: 110.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA170A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 199.4V; 110.2A; unidirectional; ±5%; P600 Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 170V Breakdown voltage: 199.4V Max. forward impulse current: 110.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA170CA-B | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 170V Breakdown voltage: 199.4V Max. forward impulse current: 110.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KPA170CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; 30kW Type of diode: TVS Max. off-state voltage: 170V Breakdown voltage: 199.4V Max. forward impulse current: 110.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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046501.6DR | LITTELFUSE |
Category: UMT SMD Fuses - Time-Lag Description: Fuse: fuse; time-lag; 1.6A; 250VAC; 250V; SMD; ceramic; 12.1x4.5mm Mounting: SMD Manufacturer series: 465 Soldering temperature: 260°C / 10 s Breaking capacity: 100A Type of fuse: fuse Fuse size: 12.1x4.5mm Kind of fuse: ceramic Fuse characteristics: time-lag Breaking characteristics: 1.25In: min 1h; 2In: max 120s; 10In: min 1ms; 10In: max 10ms Trade name: NANO2® Contact plating: silver plated Rated voltage: 0.25kV; 250V AC Operating temperature: -55...125°C Current rating: 1.6A |
на замовлення 1478 шт: термін постачання 21-30 дні (днів) |
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046506.3DR | LITTELFUSE |
Category: UMT SMD Fuses - Time-Lag Description: Fuse: fuse; time-lag; 6.3A; 250VAC; 250V; SMD; ceramic; 12.1x4.5mm Mounting: SMD Manufacturer series: 465 Soldering temperature: 260°C / 10 s Breaking capacity: 100A Type of fuse: fuse Fuse size: 12.1x4.5mm Kind of fuse: ceramic Fuse characteristics: time-lag Breaking characteristics: 1.25In: min 1h; 2In: max 120s; 10In: min 1ms; 10In: max 10ms Trade name: NANO2® Contact plating: silver plated Rated voltage: 0.25kV; 250V AC Operating temperature: -55...125°C Current rating: 6.3A |
на замовлення 1172 шт: термін постачання 21-30 дні (днів) |
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5KP11A-B | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 5kW; 12.9V; 280.2A; unidirectional; ±5%; P600; bulk Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 11V Breakdown voltage: 12.9V Max. forward impulse current: 280.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Features of semiconductor devices: glass passivated |
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04611.25ER | LITTELFUSE |
Category: SMD Fuses - Others Description: Fuse: fuse; time-lag; 1.25A; 600VAC; SMD; ceramic; 10.1x3.12x3.12mm Mounting: SMD Current rating: 1.25A Breaking capacity: 60A Breaking characteristics: 1In: min 4h; 2.5In: min 1s; 2.5In: max 120s Fuse size: 10.1x3.12x3.12mm Fuse characteristics: time-lag Kind of fuse: ceramic Contact plating: silver plated Rated voltage: 600V AC Type of fuse: fuse Contact material: brass |
на замовлення 1997 шт: термін постачання 21-30 дні (днів) |
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04661.25NR | LITTELFUSE |
Category: 1206 SMD Fuses - Ultra Fast Description: Fuse: fuse; ultra rapid; 1.25A; 63VAC; 63V; 63VDC; SMD; 466; 1206 Manufacturer series: 466 Current rating: 1.25A Soldering temperature: 260°C / 10 s Breaking capacity: 50A Type of fuse: fuse Fuse size: 3.18x1.52x0.58mm Fuse characteristics: ultra rapid Breaking characteristics: 2In: max 5s; 3In: max 200ms Mounting: SMD Contact plating: tinned Rated voltage: 63V; 63V AC; 63V DC Operating temperature: -55...90°C Case: 1206 |
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LSIC2SD120D15 | LITTELFUSE |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 15A; TO263; 93W Technology: SiC Power dissipation: 93W Case: TO263 Mounting: SMD Manufacturer series: LSIC2SD Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. forward impulse current: 120A Load current: 15A Max. forward voltage: 2.2V |
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0312.200MXP | LITTELFUSE |
Category: Fuses 6,3x32mm - Fast Description: Fuse: fuse; quick blow; 200mA; 250VAC; cylindrical,glass; 6.3x32mm Type of fuse: fuse Fuse characteristics: quick blow Breaking capacity: 35A Current rating: 0.2A Rated voltage: 250V AC Kind of fuse: cylindrical; glass; miniature Fuse size: 6.3x32mm Breaking characteristics: 1In: min 4h; 1.35In: max 1h; 2In: max 5s Contact material: brass Manufacturer series: 312 Energy I2t: 0.0165A2s Fuses application: standard applications Soldering temperature: 260°C / 5 s Kind of package: bulk Contact plating: nickel plated Operating temperature: -55...125°C |
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TMOV25SP440M | LITTELFUSE |
Category: THT varistors Description: Varistor: metal-oxide; THT; 440VAC; 585VDC; 715V; 20kA; iTMOV; 470J Type of varistor: metal-oxide Mounting: THT Varistor voltage: 715V Varistor max current 8/20µs: 20kA Max body dimensions: Ø25mm Terminal pitch: 19.2mm Manufacturer series: iTMOV Energy 2 ms: 470J Number of terminals: 3 Varistors features: monitor lead; with thermal protection Max. operating voltage: 440V AC; 585V DC |
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DSTF10200C | LITTELFUSE |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; ITO220AB; Ufmax: 1.6V Type of diode: Schottky rectifying Case: ITO220AB Mounting: THT Max. off-state voltage: 200V Max. forward voltage: 1.6V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 120A |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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P4KE180A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 400W; 180V; 1.7A; unidirectional; ±5%; DO41; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 1.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO41 Mounting: THT Leakage current: 1µA Kind of package: reel; tape |
на замовлення 4680 шт: термін постачання 21-30 дні (днів) |
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880014225 | LITTELFUSE |
Category: Car Fuseholders Description: Fuse holder; 225A; M6 screw; Leads: solder lugs M6; -50÷125°C Mounting: M6 screw Fuses application: automotive fuses Type of fuse accessories: fuse holder Rated voltage: 32V Operating temperature: -50...125°C IP rating: IP66; IP69K Leads: solder lugs M6 Maximum current: 225A |
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880014300 | LITTELFUSE |
Category: Car Fuseholders Description: Fuse holder; 300A; M6 screw; Leads: solder lugs M6; -50÷125°C Mounting: M6 screw Fuses application: automotive fuses Type of fuse accessories: fuse holder Rated voltage: 32V Operating temperature: -50...125°C IP rating: IP66; IP69K Leads: solder lugs M6 Maximum current: 300A |
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880014450 | LITTELFUSE |
Category: Car Fuseholders Description: Fuse holder; 450A; M6 screw; Leads: solder lugs M6; -50÷125°C Mounting: M6 screw Fuses application: automotive fuses Type of fuse accessories: fuse holder Rated voltage: 32V Operating temperature: -50...125°C IP rating: IP66; IP69K Leads: solder lugs M6 Maximum current: 450A |
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SMDJ33CA | LITTELFUSE |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 38.65V; 56.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 38.65V Max. forward impulse current: 56.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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5.0SMDJ33CA | LITTELFUSE |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5kW; 38.65V; 300A; bidirectional; ±5%; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 33V Breakdown voltage: 38.65V Max. forward impulse current: 300A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товар відсутній |
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5.0SMDJ33CA-T7 | LITTELFUSE |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5kW; 38.65V; 300A; bidirectional; ±5%; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 33V Breakdown voltage: 38.65V Max. forward impulse current: 300A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товар відсутній |
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5.0SMDJ33CAS | LITTELFUSE |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5kW; 38.65V; 300A; bidirectional; ±5%; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 33V Breakdown voltage: 38.65V Max. forward impulse current: 300A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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8.0SMDJ33CA | LITTELFUSE |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 8kW; 36.7÷40.6V; 150.1A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 8kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 150.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товар відсутній |
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8.0SMDJ33CA-T7 | LITTELFUSE |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 8kW; 36.7÷40.6V; 150.1A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 8kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 150.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товар відсутній |
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5KP48A-B | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 5kW; 56.1V; 65.9A; unidirectional; ±5%; P600; bulk Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 65.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Features of semiconductor devices: glass passivated |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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155.0892.5751 | LITTELFUSE |
Category: Other Car Fuses Description: Fuse: fuse; 75A; 58VDC; ceramic,automotive; CF Manufacturer series: CF Breaking capacity: 2kA / 58V DC Max voltage drop: 90mV Energy I2t: 12000A2s Fuses application: for rechargeabl battery Type of fuse: fuse Kind of fuse: automotive; ceramic Rated voltage: 58V DC Current rating: 75A |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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155.0892.6101 | LITTELFUSE |
Category: Other Car Fuses Description: Fuse: fuse; 100A; 58VDC; crimped; automotive; 20x23.5x11mm; CF Manufacturer series: CF Breaking capacity: 2kA / 58V DC Energy I2t: 14000A2s Fuses application: for rechargeabl battery Type of fuse: fuse Fuse size: 20x23.5x11mm Kind of fuse: automotive Dimensions (W x H x D): 20x11x23.5mm Breaking characteristics: 1.35In: max 1h; 1.5In: min 1s; 1.5In: max 10min; 2In: min 200ms; 2In: max 60s; 3In: min 50ms; 3In: max 1.5s; 4In: min 20ms; 4In: max 500ms; 6In: max 200ms Mounting: crimped Rated voltage: 58V DC Current rating: 100A Voltage drop: 80mV |
на замовлення 392 шт: термін постачання 21-30 дні (днів) |
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155.0892.6151 | LITTELFUSE |
Category: Other Car Fuses Description: Fuse: fuse; 150A; 58VDC; crimped; automotive; 20x23.5x11mm; CF Manufacturer series: CF Breaking capacity: 2kA / 58V DC Energy I2t: 63800A2s Fuses application: for rechargeabl battery Type of fuse: fuse Fuse size: 20x23.5x11mm Kind of fuse: automotive Dimensions (W x H x D): 20x11x23.5mm Breaking characteristics: 1.35In: max 1h; 1.5In: min 1s; 1.5In: max 10min; 2In: min 200ms; 2In: max 60s; 3In: min 50ms; 3In: max 1.5s; 4In: min 20ms; 4In: max 500ms; 6In: max 200ms Mounting: crimped Rated voltage: 58V DC Current rating: 150A Voltage drop: 70mV |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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30KPA102A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 119.6V; 183A; unidirectional; ±5%; P600; reel,tape
Mounting: THT
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Case: P600
Tolerance: ±5%
Max. off-state voltage: 102V
Semiconductor structure: unidirectional
Max. forward impulse current: 183A
Breakdown voltage: 119.6V
Leakage current: 2µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 119.6V; 183A; unidirectional; ±5%; P600; reel,tape
Mounting: THT
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Case: P600
Tolerance: ±5%
Max. off-state voltage: 102V
Semiconductor structure: unidirectional
Max. forward impulse current: 183A
Breakdown voltage: 119.6V
Leakage current: 2µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
товар відсутній
30KPA102CA-B |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; 30kW; bulk
Mounting: THT
Kind of package: bulk
Peak pulse power dissipation: 30kW
Case: P600
Tolerance: ±5%
Max. off-state voltage: 102V
Semiconductor structure: bidirectional
Max. forward impulse current: 183A
Breakdown voltage: 119.6V
Leakage current: 2µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; 30kW; bulk
Mounting: THT
Kind of package: bulk
Peak pulse power dissipation: 30kW
Case: P600
Tolerance: ±5%
Max. off-state voltage: 102V
Semiconductor structure: bidirectional
Max. forward impulse current: 183A
Breakdown voltage: 119.6V
Leakage current: 2µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
товар відсутній
30KPA102CA |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; 30kW; reel,tape
Mounting: THT
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Case: P600
Tolerance: ±5%
Max. off-state voltage: 102V
Semiconductor structure: bidirectional
Max. forward impulse current: 183A
Breakdown voltage: 119.6V
Leakage current: 2µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; 30kW; reel,tape
Mounting: THT
Kind of package: reel; tape
Peak pulse power dissipation: 30kW
Case: P600
Tolerance: ±5%
Max. off-state voltage: 102V
Semiconductor structure: bidirectional
Max. forward impulse current: 183A
Breakdown voltage: 119.6V
Leakage current: 2µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
товар відсутній
30KPA108A-B |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 126.6V; 172.9A; unidirectional; ±5%; P600; bulk
Mounting: THT
Tolerance: ±5%
Max. forward impulse current: 172.9A
Leakage current: 2µA
Case: P600
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Max. off-state voltage: 108V
Semiconductor structure: unidirectional
Breakdown voltage: 126.6V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 126.6V; 172.9A; unidirectional; ±5%; P600; bulk
Mounting: THT
Tolerance: ±5%
Max. forward impulse current: 172.9A
Leakage current: 2µA
Case: P600
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Max. off-state voltage: 108V
Semiconductor structure: unidirectional
Breakdown voltage: 126.6V
товар відсутній
30KPA108A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 126.6V; 172.9A; unidirectional; ±5%; P600
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 108V
Breakdown voltage: 126.6V
Max. forward impulse current: 172.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 126.6V; 172.9A; unidirectional; ±5%; P600
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 108V
Breakdown voltage: 126.6V
Max. forward impulse current: 172.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA108CA-B |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 108V
Breakdown voltage: 126.6V
Max. forward impulse current: 172.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 108V
Breakdown voltage: 126.6V
Max. forward impulse current: 172.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA108CA |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; 30kW
Type of diode: TVS
Max. off-state voltage: 108V
Breakdown voltage: 126.6V
Max. forward impulse current: 172.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; 30kW
Type of diode: TVS
Max. off-state voltage: 108V
Breakdown voltage: 126.6V
Max. forward impulse current: 172.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA120A-B |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 140.7V; 155.9A; unidirectional; ±5%; P600; bulk
Max. off-state voltage: 120V
Semiconductor structure: unidirectional
Max. forward impulse current: 155.9A
Breakdown voltage: 140.7V
Leakage current: 2µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: P600
Tolerance: ±5%
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 140.7V; 155.9A; unidirectional; ±5%; P600; bulk
Max. off-state voltage: 120V
Semiconductor structure: unidirectional
Max. forward impulse current: 155.9A
Breakdown voltage: 140.7V
Leakage current: 2µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: P600
Tolerance: ±5%
товар відсутній
30KPA120A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 140.7V; 155.9A; unidirectional; ±5%; P600
Max. off-state voltage: 120V
Semiconductor structure: unidirectional
Max. forward impulse current: 155.9A
Breakdown voltage: 140.7V
Leakage current: 2µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: P600
Tolerance: ±5%
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 140.7V; 155.9A; unidirectional; ±5%; P600
Max. off-state voltage: 120V
Semiconductor structure: unidirectional
Max. forward impulse current: 155.9A
Breakdown voltage: 140.7V
Leakage current: 2µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: P600
Tolerance: ±5%
товар відсутній
30KPA120CA-B |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 140.7V; 155.9A; bidirectional; ±5%; P600; 30kW; bulk
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 155.9A
Breakdown voltage: 140.7V
Leakage current: 2µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: P600
Tolerance: ±5%
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 140.7V; 155.9A; bidirectional; ±5%; P600; 30kW; bulk
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 155.9A
Breakdown voltage: 140.7V
Leakage current: 2µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: P600
Tolerance: ±5%
товар відсутній
30KPA120CA |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 140.7V; 155.9A; bidirectional; ±5%; P600; 30kW
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 155.9A
Breakdown voltage: 140.7V
Leakage current: 2µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: P600
Tolerance: ±5%
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 140.7V; 155.9A; bidirectional; ±5%; P600; 30kW
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 155.9A
Breakdown voltage: 140.7V
Leakage current: 2µA
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: P600
Tolerance: ±5%
товар відсутній
30KPA132A-B |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 154.8V; 142.3A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 132V
Breakdown voltage: 154.8V
Max. forward impulse current: 142.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 154.8V; 142.3A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 132V
Breakdown voltage: 154.8V
Max. forward impulse current: 142.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA132A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 154.8V; 142.3A; unidirectional; ±5%; P600
Type of diode: TVS
Max. off-state voltage: 132V
Breakdown voltage: 154.8V
Max. forward impulse current: 142.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 154.8V; 142.3A; unidirectional; ±5%; P600
Type of diode: TVS
Max. off-state voltage: 132V
Breakdown voltage: 154.8V
Max. forward impulse current: 142.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA132CA-B |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 132V
Breakdown voltage: 154.8V
Max. forward impulse current: 142.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 132V
Breakdown voltage: 154.8V
Max. forward impulse current: 142.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA132CA |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; 30kW
Type of diode: TVS
Max. off-state voltage: 132V
Breakdown voltage: 154.8V
Max. forward impulse current: 142.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; 30kW
Type of diode: TVS
Max. off-state voltage: 132V
Breakdown voltage: 154.8V
Max. forward impulse current: 142.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA144A-B |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 168.8V; 135.8A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 144V
Breakdown voltage: 168.8V
Max. forward impulse current: 135.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 168.8V; 135.8A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 144V
Breakdown voltage: 168.8V
Max. forward impulse current: 135.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA144A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 168.8V; 135.8A; unidirectional; ±5%; P600
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 168.8V
Max. forward impulse current: 135.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 168.8V; 135.8A; unidirectional; ±5%; P600
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 168.8V
Max. forward impulse current: 135.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA144CA-B |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 168.8V; 135.8A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 144V
Breakdown voltage: 168.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 168.8V; 135.8A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 144V
Breakdown voltage: 168.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA144CA |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 168.8V; 135.8A; bidirectional; ±5%; P600; 30kW
Type of diode: TVS
Max. off-state voltage: 144V
Breakdown voltage: 168.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 168.8V; 135.8A; bidirectional; ±5%; P600; 30kW
Type of diode: TVS
Max. off-state voltage: 144V
Breakdown voltage: 168.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA150A-B |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 176V; 129.8A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 176V; 129.8A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA150A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 176V; 129.8A; unidirectional; ±5%; P600; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 176V; 129.8A; unidirectional; ±5%; P600; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA150CA-B |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA150CA |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 150V
Breakdown voltage: 176V
Max. forward impulse current: 129.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA156A-B |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 183V; 123.7A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 183V; 123.7A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA156A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 183V; 123.7A; unidirectional; ±5%; P600; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 183V; 123.7A; unidirectional; ±5%; P600; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA156CA-B |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA156CA |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA160A-B |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 187.6V; 120A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 187.6V; 120A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA160A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 187.6V; 120A; unidirectional; ±5%; P600; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 187.6V; 120A; unidirectional; ±5%; P600; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA160CA-B |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA160CA |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 160V
Breakdown voltage: 187.6V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA168A-B |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 197.1V; 111.2A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 168V
Breakdown voltage: 197.1V
Max. forward impulse current: 111.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 197.1V; 111.2A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 168V
Breakdown voltage: 197.1V
Max. forward impulse current: 111.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA168A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 197.1V; 111.2A; unidirectional; ±5%; P600
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 168V
Breakdown voltage: 197.1V
Max. forward impulse current: 111.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 197.1V; 111.2A; unidirectional; ±5%; P600
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 168V
Breakdown voltage: 197.1V
Max. forward impulse current: 111.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA170A-B |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 199.4V; 110.2A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 199.4V; 110.2A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA170A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 199.4V; 110.2A; unidirectional; ±5%; P600
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 199.4V; 110.2A; unidirectional; ±5%; P600
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA170CA-B |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
30KPA170CA |
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; 30kW
Type of diode: TVS
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; 30kW
Type of diode: TVS
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
046501.6DR |
Виробник: LITTELFUSE
Category: UMT SMD Fuses - Time-Lag
Description: Fuse: fuse; time-lag; 1.6A; 250VAC; 250V; SMD; ceramic; 12.1x4.5mm
Mounting: SMD
Manufacturer series: 465
Soldering temperature: 260°C / 10 s
Breaking capacity: 100A
Type of fuse: fuse
Fuse size: 12.1x4.5mm
Kind of fuse: ceramic
Fuse characteristics: time-lag
Breaking characteristics: 1.25In: min 1h; 2In: max 120s; 10In: min 1ms; 10In: max 10ms
Trade name: NANO2®
Contact plating: silver plated
Rated voltage: 0.25kV; 250V AC
Operating temperature: -55...125°C
Current rating: 1.6A
Category: UMT SMD Fuses - Time-Lag
Description: Fuse: fuse; time-lag; 1.6A; 250VAC; 250V; SMD; ceramic; 12.1x4.5mm
Mounting: SMD
Manufacturer series: 465
Soldering temperature: 260°C / 10 s
Breaking capacity: 100A
Type of fuse: fuse
Fuse size: 12.1x4.5mm
Kind of fuse: ceramic
Fuse characteristics: time-lag
Breaking characteristics: 1.25In: min 1h; 2In: max 120s; 10In: min 1ms; 10In: max 10ms
Trade name: NANO2®
Contact plating: silver plated
Rated voltage: 0.25kV; 250V AC
Operating temperature: -55...125°C
Current rating: 1.6A
на замовлення 1478 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 123.09 грн |
10+ | 110.79 грн |
11+ | 79.33 грн |
29+ | 75 грн |
500+ | 73.63 грн |
046506.3DR |
Виробник: LITTELFUSE
Category: UMT SMD Fuses - Time-Lag
Description: Fuse: fuse; time-lag; 6.3A; 250VAC; 250V; SMD; ceramic; 12.1x4.5mm
Mounting: SMD
Manufacturer series: 465
Soldering temperature: 260°C / 10 s
Breaking capacity: 100A
Type of fuse: fuse
Fuse size: 12.1x4.5mm
Kind of fuse: ceramic
Fuse characteristics: time-lag
Breaking characteristics: 1.25In: min 1h; 2In: max 120s; 10In: min 1ms; 10In: max 10ms
Trade name: NANO2®
Contact plating: silver plated
Rated voltage: 0.25kV; 250V AC
Operating temperature: -55...125°C
Current rating: 6.3A
Category: UMT SMD Fuses - Time-Lag
Description: Fuse: fuse; time-lag; 6.3A; 250VAC; 250V; SMD; ceramic; 12.1x4.5mm
Mounting: SMD
Manufacturer series: 465
Soldering temperature: 260°C / 10 s
Breaking capacity: 100A
Type of fuse: fuse
Fuse size: 12.1x4.5mm
Kind of fuse: ceramic
Fuse characteristics: time-lag
Breaking characteristics: 1.25In: min 1h; 2In: max 120s; 10In: min 1ms; 10In: max 10ms
Trade name: NANO2®
Contact plating: silver plated
Rated voltage: 0.25kV; 250V AC
Operating temperature: -55...125°C
Current rating: 6.3A
на замовлення 1172 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 123.09 грн |
10+ | 110.79 грн |
11+ | 80.02 грн |
29+ | 75.65 грн |
5KP11A-B |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 5kW; 12.9V; 280.2A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 11V
Breakdown voltage: 12.9V
Max. forward impulse current: 280.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 5kW; 12.9V; 280.2A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 11V
Breakdown voltage: 12.9V
Max. forward impulse current: 280.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
04611.25ER |
Виробник: LITTELFUSE
Category: SMD Fuses - Others
Description: Fuse: fuse; time-lag; 1.25A; 600VAC; SMD; ceramic; 10.1x3.12x3.12mm
Mounting: SMD
Current rating: 1.25A
Breaking capacity: 60A
Breaking characteristics: 1In: min 4h; 2.5In: min 1s; 2.5In: max 120s
Fuse size: 10.1x3.12x3.12mm
Fuse characteristics: time-lag
Kind of fuse: ceramic
Contact plating: silver plated
Rated voltage: 600V AC
Type of fuse: fuse
Contact material: brass
Category: SMD Fuses - Others
Description: Fuse: fuse; time-lag; 1.25A; 600VAC; SMD; ceramic; 10.1x3.12x3.12mm
Mounting: SMD
Current rating: 1.25A
Breaking capacity: 60A
Breaking characteristics: 1In: min 4h; 2.5In: min 1s; 2.5In: max 120s
Fuse size: 10.1x3.12x3.12mm
Fuse characteristics: time-lag
Kind of fuse: ceramic
Contact plating: silver plated
Rated voltage: 600V AC
Type of fuse: fuse
Contact material: brass
на замовлення 1997 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 110.25 грн |
11+ | 78.17 грн |
29+ | 73.9 грн |
04661.25NR |
Виробник: LITTELFUSE
Category: 1206 SMD Fuses - Ultra Fast
Description: Fuse: fuse; ultra rapid; 1.25A; 63VAC; 63V; 63VDC; SMD; 466; 1206
Manufacturer series: 466
Current rating: 1.25A
Soldering temperature: 260°C / 10 s
Breaking capacity: 50A
Type of fuse: fuse
Fuse size: 3.18x1.52x0.58mm
Fuse characteristics: ultra rapid
Breaking characteristics: 2In: max 5s; 3In: max 200ms
Mounting: SMD
Contact plating: tinned
Rated voltage: 63V; 63V AC; 63V DC
Operating temperature: -55...90°C
Case: 1206
Category: 1206 SMD Fuses - Ultra Fast
Description: Fuse: fuse; ultra rapid; 1.25A; 63VAC; 63V; 63VDC; SMD; 466; 1206
Manufacturer series: 466
Current rating: 1.25A
Soldering temperature: 260°C / 10 s
Breaking capacity: 50A
Type of fuse: fuse
Fuse size: 3.18x1.52x0.58mm
Fuse characteristics: ultra rapid
Breaking characteristics: 2In: max 5s; 3In: max 200ms
Mounting: SMD
Contact plating: tinned
Rated voltage: 63V; 63V AC; 63V DC
Operating temperature: -55...90°C
Case: 1206
товар відсутній
LSIC2SD120D15 |
Виробник: LITTELFUSE
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 15A; TO263; 93W
Technology: SiC
Power dissipation: 93W
Case: TO263
Mounting: SMD
Manufacturer series: LSIC2SD
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Load current: 15A
Max. forward voltage: 2.2V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 15A; TO263; 93W
Technology: SiC
Power dissipation: 93W
Case: TO263
Mounting: SMD
Manufacturer series: LSIC2SD
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Load current: 15A
Max. forward voltage: 2.2V
товар відсутній
0312.200MXP |
Виробник: LITTELFUSE
Category: Fuses 6,3x32mm - Fast
Description: Fuse: fuse; quick blow; 200mA; 250VAC; cylindrical,glass; 6.3x32mm
Type of fuse: fuse
Fuse characteristics: quick blow
Breaking capacity: 35A
Current rating: 0.2A
Rated voltage: 250V AC
Kind of fuse: cylindrical; glass; miniature
Fuse size: 6.3x32mm
Breaking characteristics: 1In: min 4h; 1.35In: max 1h; 2In: max 5s
Contact material: brass
Manufacturer series: 312
Energy I2t: 0.0165A2s
Fuses application: standard applications
Soldering temperature: 260°C / 5 s
Kind of package: bulk
Contact plating: nickel plated
Operating temperature: -55...125°C
Category: Fuses 6,3x32mm - Fast
Description: Fuse: fuse; quick blow; 200mA; 250VAC; cylindrical,glass; 6.3x32mm
Type of fuse: fuse
Fuse characteristics: quick blow
Breaking capacity: 35A
Current rating: 0.2A
Rated voltage: 250V AC
Kind of fuse: cylindrical; glass; miniature
Fuse size: 6.3x32mm
Breaking characteristics: 1In: min 4h; 1.35In: max 1h; 2In: max 5s
Contact material: brass
Manufacturer series: 312
Energy I2t: 0.0165A2s
Fuses application: standard applications
Soldering temperature: 260°C / 5 s
Kind of package: bulk
Contact plating: nickel plated
Operating temperature: -55...125°C
товар відсутній
TMOV25SP440M |
Виробник: LITTELFUSE
Category: THT varistors
Description: Varistor: metal-oxide; THT; 440VAC; 585VDC; 715V; 20kA; iTMOV; 470J
Type of varistor: metal-oxide
Mounting: THT
Varistor voltage: 715V
Varistor max current 8/20µs: 20kA
Max body dimensions: Ø25mm
Terminal pitch: 19.2mm
Manufacturer series: iTMOV
Energy 2 ms: 470J
Number of terminals: 3
Varistors features: monitor lead; with thermal protection
Max. operating voltage: 440V AC; 585V DC
Category: THT varistors
Description: Varistor: metal-oxide; THT; 440VAC; 585VDC; 715V; 20kA; iTMOV; 470J
Type of varistor: metal-oxide
Mounting: THT
Varistor voltage: 715V
Varistor max current 8/20µs: 20kA
Max body dimensions: Ø25mm
Terminal pitch: 19.2mm
Manufacturer series: iTMOV
Energy 2 ms: 470J
Number of terminals: 3
Varistors features: monitor lead; with thermal protection
Max. operating voltage: 440V AC; 585V DC
товар відсутній
DSTF10200C |
Виробник: LITTELFUSE
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; ITO220AB; Ufmax: 1.6V
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 1.6V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; ITO220AB; Ufmax: 1.6V
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 1.6V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
на замовлення 34 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 59.6 грн |
19+ | 43.48 грн |
P4KE180A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 400W; 180V; 1.7A; unidirectional; ±5%; DO41; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 1.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO41
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 400W; 180V; 1.7A; unidirectional; ±5%; DO41; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 1.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO41
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 4680 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 42.29 грн |
19+ | 18.51 грн |
100+ | 10.1 грн |
125+ | 6.48 грн |
344+ | 6.13 грн |
880014225 |
Виробник: LITTELFUSE
Category: Car Fuseholders
Description: Fuse holder; 225A; M6 screw; Leads: solder lugs M6; -50÷125°C
Mounting: M6 screw
Fuses application: automotive fuses
Type of fuse accessories: fuse holder
Rated voltage: 32V
Operating temperature: -50...125°C
IP rating: IP66; IP69K
Leads: solder lugs M6
Maximum current: 225A
Category: Car Fuseholders
Description: Fuse holder; 225A; M6 screw; Leads: solder lugs M6; -50÷125°C
Mounting: M6 screw
Fuses application: automotive fuses
Type of fuse accessories: fuse holder
Rated voltage: 32V
Operating temperature: -50...125°C
IP rating: IP66; IP69K
Leads: solder lugs M6
Maximum current: 225A
товар відсутній
880014300 |
Виробник: LITTELFUSE
Category: Car Fuseholders
Description: Fuse holder; 300A; M6 screw; Leads: solder lugs M6; -50÷125°C
Mounting: M6 screw
Fuses application: automotive fuses
Type of fuse accessories: fuse holder
Rated voltage: 32V
Operating temperature: -50...125°C
IP rating: IP66; IP69K
Leads: solder lugs M6
Maximum current: 300A
Category: Car Fuseholders
Description: Fuse holder; 300A; M6 screw; Leads: solder lugs M6; -50÷125°C
Mounting: M6 screw
Fuses application: automotive fuses
Type of fuse accessories: fuse holder
Rated voltage: 32V
Operating temperature: -50...125°C
IP rating: IP66; IP69K
Leads: solder lugs M6
Maximum current: 300A
товар відсутній
880014450 |
Виробник: LITTELFUSE
Category: Car Fuseholders
Description: Fuse holder; 450A; M6 screw; Leads: solder lugs M6; -50÷125°C
Mounting: M6 screw
Fuses application: automotive fuses
Type of fuse accessories: fuse holder
Rated voltage: 32V
Operating temperature: -50...125°C
IP rating: IP66; IP69K
Leads: solder lugs M6
Maximum current: 450A
Category: Car Fuseholders
Description: Fuse holder; 450A; M6 screw; Leads: solder lugs M6; -50÷125°C
Mounting: M6 screw
Fuses application: automotive fuses
Type of fuse accessories: fuse holder
Rated voltage: 32V
Operating temperature: -50...125°C
IP rating: IP66; IP69K
Leads: solder lugs M6
Maximum current: 450A
товар відсутній
SMDJ33CA |
Виробник: LITTELFUSE
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 38.65V; 56.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 38.65V
Max. forward impulse current: 56.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 38.65V; 56.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 38.65V
Max. forward impulse current: 56.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 55.88 грн |
14+ | 25.8 грн |
25+ | 23.42 грн |
39+ | 21.25 грн |
100+ | 21.11 грн |
106+ | 20.05 грн |
500+ | 19.63 грн |
5.0SMDJ33CA |
Виробник: LITTELFUSE
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5kW; 38.65V; 300A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.65V
Max. forward impulse current: 300A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5kW; 38.65V; 300A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.65V
Max. forward impulse current: 300A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
5.0SMDJ33CA-T7 |
Виробник: LITTELFUSE
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5kW; 38.65V; 300A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.65V
Max. forward impulse current: 300A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5kW; 38.65V; 300A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.65V
Max. forward impulse current: 300A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
5.0SMDJ33CAS |
Виробник: LITTELFUSE
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5kW; 38.65V; 300A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.65V
Max. forward impulse current: 300A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5kW; 38.65V; 300A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.65V
Max. forward impulse current: 300A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
8.0SMDJ33CA |
Виробник: LITTELFUSE
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 36.7÷40.6V; 150.1A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 8kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 150.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 36.7÷40.6V; 150.1A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 8kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 150.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
8.0SMDJ33CA-T7 |
Виробник: LITTELFUSE
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 36.7÷40.6V; 150.1A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 8kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 150.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 36.7÷40.6V; 150.1A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 8kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 150.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
5KP48A-B |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 5kW; 56.1V; 65.9A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 5kW; 56.1V; 65.9A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
на замовлення 25 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 119.21 грн |
9+ | 90.46 грн |
25+ | 85.55 грн |
155.0892.5751 |
Виробник: LITTELFUSE
Category: Other Car Fuses
Description: Fuse: fuse; 75A; 58VDC; ceramic,automotive; CF
Manufacturer series: CF
Breaking capacity: 2kA / 58V DC
Max voltage drop: 90mV
Energy I2t: 12000A2s
Fuses application: for rechargeabl battery
Type of fuse: fuse
Kind of fuse: automotive; ceramic
Rated voltage: 58V DC
Current rating: 75A
Category: Other Car Fuses
Description: Fuse: fuse; 75A; 58VDC; ceramic,automotive; CF
Manufacturer series: CF
Breaking capacity: 2kA / 58V DC
Max voltage drop: 90mV
Energy I2t: 12000A2s
Fuses application: for rechargeabl battery
Type of fuse: fuse
Kind of fuse: automotive; ceramic
Rated voltage: 58V DC
Current rating: 75A
на замовлення 31 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 542.21 грн |
3+ | 349.91 грн |
7+ | 330.98 грн |
155.0892.6101 |
Виробник: LITTELFUSE
Category: Other Car Fuses
Description: Fuse: fuse; 100A; 58VDC; crimped; automotive; 20x23.5x11mm; CF
Manufacturer series: CF
Breaking capacity: 2kA / 58V DC
Energy I2t: 14000A2s
Fuses application: for rechargeabl battery
Type of fuse: fuse
Fuse size: 20x23.5x11mm
Kind of fuse: automotive
Dimensions (W x H x D): 20x11x23.5mm
Breaking characteristics: 1.35In: max 1h; 1.5In: min 1s; 1.5In: max 10min; 2In: min 200ms; 2In: max 60s; 3In: min 50ms; 3In: max 1.5s; 4In: min 20ms; 4In: max 500ms; 6In: max 200ms
Mounting: crimped
Rated voltage: 58V DC
Current rating: 100A
Voltage drop: 80mV
Category: Other Car Fuses
Description: Fuse: fuse; 100A; 58VDC; crimped; automotive; 20x23.5x11mm; CF
Manufacturer series: CF
Breaking capacity: 2kA / 58V DC
Energy I2t: 14000A2s
Fuses application: for rechargeabl battery
Type of fuse: fuse
Fuse size: 20x23.5x11mm
Kind of fuse: automotive
Dimensions (W x H x D): 20x11x23.5mm
Breaking characteristics: 1.35In: max 1h; 1.5In: min 1s; 1.5In: max 10min; 2In: min 200ms; 2In: max 60s; 3In: min 50ms; 3In: max 1.5s; 4In: min 20ms; 4In: max 500ms; 6In: max 200ms
Mounting: crimped
Rated voltage: 58V DC
Current rating: 100A
Voltage drop: 80mV
на замовлення 392 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 595.07 грн |
3+ | 342.9 грн |
7+ | 324.67 грн |
155.0892.6151 |
Виробник: LITTELFUSE
Category: Other Car Fuses
Description: Fuse: fuse; 150A; 58VDC; crimped; automotive; 20x23.5x11mm; CF
Manufacturer series: CF
Breaking capacity: 2kA / 58V DC
Energy I2t: 63800A2s
Fuses application: for rechargeabl battery
Type of fuse: fuse
Fuse size: 20x23.5x11mm
Kind of fuse: automotive
Dimensions (W x H x D): 20x11x23.5mm
Breaking characteristics: 1.35In: max 1h; 1.5In: min 1s; 1.5In: max 10min; 2In: min 200ms; 2In: max 60s; 3In: min 50ms; 3In: max 1.5s; 4In: min 20ms; 4In: max 500ms; 6In: max 200ms
Mounting: crimped
Rated voltage: 58V DC
Current rating: 150A
Voltage drop: 70mV
Category: Other Car Fuses
Description: Fuse: fuse; 150A; 58VDC; crimped; automotive; 20x23.5x11mm; CF
Manufacturer series: CF
Breaking capacity: 2kA / 58V DC
Energy I2t: 63800A2s
Fuses application: for rechargeabl battery
Type of fuse: fuse
Fuse size: 20x23.5x11mm
Kind of fuse: automotive
Dimensions (W x H x D): 20x11x23.5mm
Breaking characteristics: 1.35In: max 1h; 1.5In: min 1s; 1.5In: max 10min; 2In: min 200ms; 2In: max 60s; 3In: min 50ms; 3In: max 1.5s; 4In: min 20ms; 4In: max 500ms; 6In: max 200ms
Mounting: crimped
Rated voltage: 58V DC
Current rating: 150A
Voltage drop: 70mV
на замовлення 28 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 777.82 грн |
2+ | 483.14 грн |
5+ | 457.2 грн |