Продукція > LITTELFUSE > Всі товари виробника LITTELFUSE (136604) > Сторінка 2258 з 2277
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SMF4L48CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L51CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 4.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L10CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L12CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L14CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L17CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 18.9...20.9V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L20CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L22CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.3A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L26CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L30CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L43CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.8A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 5.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L45CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L9.0CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 10÷11.1V; 26.4A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 26.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L15CA | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L120A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 133÷147V; 1A; unidirectional; ±5%; SOD123F; SMF4L Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L130A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 144÷159V; 1A; unidirectional; ±5%; SOD123F; SMF4L Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 130V Breakdown voltage: 144...159V Max. forward impulse current: 1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L90A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 100÷111V; 1.4A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 1.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L160A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 178÷197V; 800mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 160V Breakdown voltage: 178...197V Max. forward impulse current: 0.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L220A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 246÷272V; 600mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 220V Breakdown voltage: 246...272V Max. forward impulse current: 0.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L12A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L15A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L16A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.4A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L17A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 18.9...20.9V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L100A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 111÷123V; 1.2A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 100V Breakdown voltage: 111...123V Max. forward impulse current: 1.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L10A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L110A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 122÷135V; 1.1A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 110V Breakdown voltage: 122...135V Max. forward impulse current: 1.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L11A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 12.2÷13.5V; 22A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 22A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L13A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L14A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L150A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 167÷185V; 800mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167...185V Max. forward impulse current: 0.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L170A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 189÷209V; 700mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 170V Breakdown voltage: 189...209V Max. forward impulse current: 0.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L180A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 201÷222V; 700mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 180V Breakdown voltage: 201...222V Max. forward impulse current: 0.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L188A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 209÷231V; 700mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 188V Breakdown voltage: 209...231V Max. forward impulse current: 0.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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В кошику од. на суму грн. | ||||||||||||
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SMF4L18A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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TPSMF4L10A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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TPSMF4L15A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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В кошику од. на суму грн. | ||||||||||||
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TPSMF4L11A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 12.85V; 22A; unidirectional; ±5%; SOD123F; TPSMF4L Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.85V Max. forward impulse current: 22A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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В кошику од. на суму грн. | ||||||||||||
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TPSMF4L13A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 15.15V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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В кошику од. на суму грн. | ||||||||||||
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TPSMF4L14A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 16.4V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPSMF4L16A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 18.75V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPSMF4L17A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPSMF4L18A | LITTELFUSE |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 21.05V; 13.7A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 21.05V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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S8020LTP | LITTELFUSE |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 20A; 12.8A; Igt: 30mA; TO220ABIns; THT; tube Mounting: THT Kind of package: tube Features of semiconductor devices: glass passivated Case: TO220ABIns Type of thyristor: thyristor Gate current: 30mA Load current: 12.8A Max. load current: 20A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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Q8025K6TP | LITTELFUSE |
Category: TriacsDescription: Triac; 800V; 25A; TO218AC-ISO; Igt: 80mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO218AC-ISO Gate current: 80mA Features of semiconductor devices: alternistor; glass passivated Mounting: THT Kind of package: tube |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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Q8025L6TP | LITTELFUSE |
Category: TriacsDescription: Triac; 800V; 25A; TO220ABL; Igt: 80mA; Ifsm: 208A; alternistor Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220ABL Gate current: 80mA Max. forward impulse current: 208A Features of semiconductor devices: alternistor Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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Q8025N5RP | LITTELFUSE |
Category: TriacsDescription: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 167A; glass passivated Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: D2PAK Gate current: 50mA Max. forward impulse current: 167A Features of semiconductor devices: glass passivated Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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Q8025NH6RP | LITTELFUSE |
Category: TriacsDescription: Triac; 800V; 25A; D2PAK; Igt: 80mA; Ifsm: 208A; alternistor Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: D2PAK Gate current: 80mA Max. forward impulse current: 208A Features of semiconductor devices: alternistor Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 54010 | LITTELFUSE |
Category: Rocker Switches Description: ROCKER; SPDT; Pos: 2; ON-ON; 10A/12VDC; Leads: connectors; on panel Mounting: on panel Panel thickness: 0.5...6.35mm Mounting hole diameter: 31.42x17.02mm Number of positions: 2 Stable positions number: 2 DC contacts rating @R: 10A / 12V DC Leads: connectors Contact material: copper Contacts configuration: SPDT Switching method: ON-ON Type of switch: ROCKER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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59140-040 | LITTELFUSE |
Category: Reed SensorsDescription: Reed switch; Range: 11.6mm; Pswitch: 5W; 23x14x6mm; 0.25A; max.175V Contacts configuration: SPST-NC Switched voltage: max. 175V Operating temperature: -40...105°C Body dimensions: 23x14x6mm Type of sensor: reed switch Range: 11.6mm Related items: 57140-000 Switched current: 0.25A Lead length: 0.3m Connection: cables Switching capacity: 5W Sensors features: actuator is sold separately |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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L6006D6RP | LITTELFUSE |
Category: TriacsDescription: Triac; 600V; 6A; DPAK; Igt: 5mA; Ifsm: 50A; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 6A Case: DPAK Gate current: 5mA Max. forward impulse current: 50A Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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L6006V6TP | LITTELFUSE |
Category: TriacsDescription: Triac; 600V; 6A; IPAK; Igt: 5mA; Ifsm: 50A; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 6A Case: IPAK Gate current: 5mA Max. forward impulse current: 50A Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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0242.100UAT1 | LITTELFUSE |
Category: Axial Fuses - FastDescription: Fuse: fuse; 100mA; 250V; quick blow; axial; 3x8.4mm; 242 Type of fuse: fuse Current rating: 0.1A Rated voltage: 250V Fuse characteristics: quick blow Kind of fuse: axial; miniature Fuse size: 3x8.4mm Manufacturer series: 242 Breaking capacity: 4kA Breaking characteristics: 1.1In: min 4h; 3In: max 10s; 10In: max 2ms Energy I2t: 0.000977A2s Pin diameter: 0.6mm Kind of package: Ammo Pack; tape Leads: for soldering |
на замовлення 695 шт: термін постачання 21-30 дні (днів) |
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2920L500/16MR | LITTELFUSE |
Category: SMD Polymer FusesDescription: Fuse: PTC polymer; 5A; SMD; 2920L Mounting: SMD Operating temperature: -40...85°C Min. resistance: 5mΩ Max resistance: 25mΩ Power: 2W Current rating: 5A Switched current: 10A Max. voltage: 16V DC Max surge current: 40A Manufacturer series: 2920L Type of fuse: PTC polymer |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SP1005-01WTG | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 8.5V; 10A; bidirectional; ±5%; 0201; reel,tape; Ch: 1; ESD Type of diode: TVS Max. off-state voltage: 6V Breakdown voltage: 8.5V Max. forward impulse current: 10A Semiconductor structure: bidirectional Tolerance: ±5% Case: 0201 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Technology: SPA® Diodes Number of channels: 1 Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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0313012.MXP | LITTELFUSE |
Category: Fuses 6,3x32mm - Time-LagDescription: Fuse: fuse; 12A; 32VAC; time-lag; cylindrical,glass; 6.3x32mm; 313 Manufacturer series: 313 Kind of fuse: cylindrical; glass; miniature Type of fuse: fuse Contact plating: nickel plated Fuses application: standard applications Fuse characteristics: time-lag Operating temperature: -55...125°C Fuse size: 6.3x32mm Breaking characteristics: 1In: min 4h; 1.35In: max 1h; 2In: min 5s; 2In: max 30s Current rating: 12A Rated voltage: 32V AC Soldering temperature: 260°C / 5 s Breaking capacity: 300A Energy I2t: 1200A2s Kind of package: bulk Contact material: brass |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CCMR07.5TXP | LITTELFUSE |
Category: Other FusesDescription: Fuse: fuse; 7.5A; 600VAC; 250VDC; time-lag; ceramic,industrial Rated voltage: 250V DC; 600V AC Breaking capacity: 200kA Kind of fuse: ceramic; industrial Type of fuse: fuse Fuses application: motors start-up circuits Fuse characteristics: time-lag Current rating: 7.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 57003-01 | LITTELFUSE |
Category: Rocker Switches Description: ROCKER; Pos: 3; ON-OFF-ON; 25A/12VDC; Leads: connectors; on panel Type of switch: ROCKER Number of positions: 3 Stable positions number: 3 Switching method: ON-OFF-ON DC contacts rating @R: 25A / 12V DC Leads: connectors Contact material: silver Mounting: on panel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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S6025LTP | LITTELFUSE |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 25A; 16A; Igt: 35mA; TO220ABIns; THT; tube Features of semiconductor devices: glass passivated Kind of package: tube Mounting: THT Type of thyristor: thyristor Gate current: 35mA Max. off-state voltage: 0.6kV Load current: 16A Max. load current: 25A Case: TO220ABIns |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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S6025RTP | LITTELFUSE |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 25A; 16A; Igt: 35mA; TO220AB; THT; tube Mounting: THT Case: TO220AB Type of thyristor: thyristor Kind of package: tube Gate current: 35mA Load current: 16A Max. load current: 25A Max. off-state voltage: 0.6kV Features of semiconductor devices: glass passivated |
на замовлення 782 шт: термін постачання 21-30 дні (днів) |
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S6025R | LITTELFUSE |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 25A; 16A; Igt: 35mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 25A Load current: 16A Gate current: 35mA Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. |
| SMF4L48CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
товару немає в наявності
В кошику
од. на суму грн.
| SMF4L51CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
товару немає в наявності
В кошику
од. на суму грн.
| SMF4L10CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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В кошику
од. на суму грн.
| SMF4L12CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
товару немає в наявності
В кошику
од. на суму грн.
| SMF4L14CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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В кошику
од. на суму грн.
| SMF4L17CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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В кошику
од. на суму грн.
| SMF4L20CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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В кошику
од. на суму грн.
| SMF4L22CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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В кошику
од. на суму грн.
| SMF4L26CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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В кошику
од. на суму грн.
| SMF4L30CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L43CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.8A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.8A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L45CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L9.0CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26.4A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26.4A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L15CA |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L120A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 1A; unidirectional; ±5%; SOD123F; SMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 1A; unidirectional; ±5%; SOD123F; SMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L130A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1A; unidirectional; ±5%; SOD123F; SMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1A; unidirectional; ±5%; SOD123F; SMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L90A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 1.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 1.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 1.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 1.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L160A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 178÷197V; 800mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 0.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 178÷197V; 800mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 0.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L220A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 246÷272V; 600mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 246...272V
Max. forward impulse current: 0.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 246÷272V; 600mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 246...272V
Max. forward impulse current: 0.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L12A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L15A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L16A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L17A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L100A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 1.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 1.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L10A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L110A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 1.1A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 1.1A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L11A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 22A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 22A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L13A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L14A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L150A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 800mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 0.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 800mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 0.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L170A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189÷209V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189÷209V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L180A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 201÷222V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 201...222V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 201÷222V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 201...222V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L188A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209÷231V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209...231V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209÷231V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209...231V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| SMF4L18A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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| TPSMF4L10A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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| TPSMF4L15A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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| TPSMF4L11A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; ±5%; SOD123F; TPSMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; ±5%; SOD123F; TPSMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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| TPSMF4L13A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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| TPSMF4L14A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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| TPSMF4L16A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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| TPSMF4L17A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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| TPSMF4L18A |
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Виробник: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 21.05V; 13.7A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21.05V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 21.05V; 13.7A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21.05V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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| S8020LTP |
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Виробник: LITTELFUSE
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 12.8A; Igt: 30mA; TO220ABIns; THT; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: TO220ABIns
Type of thyristor: thyristor
Gate current: 30mA
Load current: 12.8A
Max. load current: 20A
Max. off-state voltage: 0.8kV
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 12.8A; Igt: 30mA; TO220ABIns; THT; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: TO220ABIns
Type of thyristor: thyristor
Gate current: 30mA
Load current: 12.8A
Max. load current: 20A
Max. off-state voltage: 0.8kV
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| Q8025K6TP |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 800V; 25A; TO218AC-ISO; Igt: 80mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO218AC-ISO
Gate current: 80mA
Features of semiconductor devices: alternistor; glass passivated
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO218AC-ISO; Igt: 80mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO218AC-ISO
Gate current: 80mA
Features of semiconductor devices: alternistor; glass passivated
Mounting: THT
Kind of package: tube
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 489.40 грн |
| 3+ | 357.06 грн |
| 8+ | 338.06 грн |
| Q8025L6TP |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 800V; 25A; TO220ABL; Igt: 80mA; Ifsm: 208A; alternistor
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220ABL
Gate current: 80mA
Max. forward impulse current: 208A
Features of semiconductor devices: alternistor
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220ABL; Igt: 80mA; Ifsm: 208A; alternistor
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220ABL
Gate current: 80mA
Max. forward impulse current: 208A
Features of semiconductor devices: alternistor
Mounting: THT
Kind of package: tube
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| Q8025N5RP |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 167A; glass passivated
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 167A
Features of semiconductor devices: glass passivated
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 167A; glass passivated
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 167A
Features of semiconductor devices: glass passivated
Mounting: SMD
Kind of package: reel; tape
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| Q8025NH6RP |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 80mA; Ifsm: 208A; alternistor
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 80mA
Max. forward impulse current: 208A
Features of semiconductor devices: alternistor
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 80mA; Ifsm: 208A; alternistor
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 80mA
Max. forward impulse current: 208A
Features of semiconductor devices: alternistor
Mounting: SMD
Kind of package: reel; tape
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| 54010 |
Виробник: LITTELFUSE
Category: Rocker Switches
Description: ROCKER; SPDT; Pos: 2; ON-ON; 10A/12VDC; Leads: connectors; on panel
Mounting: on panel
Panel thickness: 0.5...6.35mm
Mounting hole diameter: 31.42x17.02mm
Number of positions: 2
Stable positions number: 2
DC contacts rating @R: 10A / 12V DC
Leads: connectors
Contact material: copper
Contacts configuration: SPDT
Switching method: ON-ON
Type of switch: ROCKER
Category: Rocker Switches
Description: ROCKER; SPDT; Pos: 2; ON-ON; 10A/12VDC; Leads: connectors; on panel
Mounting: on panel
Panel thickness: 0.5...6.35mm
Mounting hole diameter: 31.42x17.02mm
Number of positions: 2
Stable positions number: 2
DC contacts rating @R: 10A / 12V DC
Leads: connectors
Contact material: copper
Contacts configuration: SPDT
Switching method: ON-ON
Type of switch: ROCKER
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| 59140-040 |
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Виробник: LITTELFUSE
Category: Reed Sensors
Description: Reed switch; Range: 11.6mm; Pswitch: 5W; 23x14x6mm; 0.25A; max.175V
Contacts configuration: SPST-NC
Switched voltage: max. 175V
Operating temperature: -40...105°C
Body dimensions: 23x14x6mm
Type of sensor: reed switch
Range: 11.6mm
Related items: 57140-000
Switched current: 0.25A
Lead length: 0.3m
Connection: cables
Switching capacity: 5W
Sensors features: actuator is sold separately
Category: Reed Sensors
Description: Reed switch; Range: 11.6mm; Pswitch: 5W; 23x14x6mm; 0.25A; max.175V
Contacts configuration: SPST-NC
Switched voltage: max. 175V
Operating temperature: -40...105°C
Body dimensions: 23x14x6mm
Type of sensor: reed switch
Range: 11.6mm
Related items: 57140-000
Switched current: 0.25A
Lead length: 0.3m
Connection: cables
Switching capacity: 5W
Sensors features: actuator is sold separately
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 306.09 грн |
| 5+ | 216.93 грн |
| L6006D6RP |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 600V; 6A; DPAK; Igt: 5mA; Ifsm: 50A; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 6A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 50A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 6A; DPAK; Igt: 5mA; Ifsm: 50A; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 6A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 50A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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| L6006V6TP |
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Виробник: LITTELFUSE
Category: Triacs
Description: Triac; 600V; 6A; IPAK; Igt: 5mA; Ifsm: 50A; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 6A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 50A
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 6A; IPAK; Igt: 5mA; Ifsm: 50A; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 6A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 50A
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| 0242.100UAT1 | ![]() |
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Виробник: LITTELFUSE
Category: Axial Fuses - Fast
Description: Fuse: fuse; 100mA; 250V; quick blow; axial; 3x8.4mm; 242
Type of fuse: fuse
Current rating: 0.1A
Rated voltage: 250V
Fuse characteristics: quick blow
Kind of fuse: axial; miniature
Fuse size: 3x8.4mm
Manufacturer series: 242
Breaking capacity: 4kA
Breaking characteristics: 1.1In: min 4h; 3In: max 10s; 10In: max 2ms
Energy I2t: 0.000977A2s
Pin diameter: 0.6mm
Kind of package: Ammo Pack; tape
Leads: for soldering
Category: Axial Fuses - Fast
Description: Fuse: fuse; 100mA; 250V; quick blow; axial; 3x8.4mm; 242
Type of fuse: fuse
Current rating: 0.1A
Rated voltage: 250V
Fuse characteristics: quick blow
Kind of fuse: axial; miniature
Fuse size: 3x8.4mm
Manufacturer series: 242
Breaking capacity: 4kA
Breaking characteristics: 1.1In: min 4h; 3In: max 10s; 10In: max 2ms
Energy I2t: 0.000977A2s
Pin diameter: 0.6mm
Kind of package: Ammo Pack; tape
Leads: for soldering
на замовлення 695 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.65 грн |
| 9+ | 109.26 грн |
| 24+ | 102.92 грн |
| 2920L500/16MR |
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Виробник: LITTELFUSE
Category: SMD Polymer Fuses
Description: Fuse: PTC polymer; 5A; SMD; 2920L
Mounting: SMD
Operating temperature: -40...85°C
Min. resistance: 5mΩ
Max resistance: 25mΩ
Power: 2W
Current rating: 5A
Switched current: 10A
Max. voltage: 16V DC
Max surge current: 40A
Manufacturer series: 2920L
Type of fuse: PTC polymer
Category: SMD Polymer Fuses
Description: Fuse: PTC polymer; 5A; SMD; 2920L
Mounting: SMD
Operating temperature: -40...85°C
Min. resistance: 5mΩ
Max resistance: 25mΩ
Power: 2W
Current rating: 5A
Switched current: 10A
Max. voltage: 16V DC
Max surge current: 40A
Manufacturer series: 2920L
Type of fuse: PTC polymer
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| SP1005-01WTG |
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Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 8.5V; 10A; bidirectional; ±5%; 0201; reel,tape; Ch: 1; ESD
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 8.5V
Max. forward impulse current: 10A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: 0201
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Technology: SPA® Diodes
Number of channels: 1
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 8.5V; 10A; bidirectional; ±5%; 0201; reel,tape; Ch: 1; ESD
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 8.5V
Max. forward impulse current: 10A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: 0201
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Technology: SPA® Diodes
Number of channels: 1
Version: ESD
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| 0313012.MXP |
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Виробник: LITTELFUSE
Category: Fuses 6,3x32mm - Time-Lag
Description: Fuse: fuse; 12A; 32VAC; time-lag; cylindrical,glass; 6.3x32mm; 313
Manufacturer series: 313
Kind of fuse: cylindrical; glass; miniature
Type of fuse: fuse
Contact plating: nickel plated
Fuses application: standard applications
Fuse characteristics: time-lag
Operating temperature: -55...125°C
Fuse size: 6.3x32mm
Breaking characteristics: 1In: min 4h; 1.35In: max 1h; 2In: min 5s; 2In: max 30s
Current rating: 12A
Rated voltage: 32V AC
Soldering temperature: 260°C / 5 s
Breaking capacity: 300A
Energy I2t: 1200A2s
Kind of package: bulk
Contact material: brass
Category: Fuses 6,3x32mm - Time-Lag
Description: Fuse: fuse; 12A; 32VAC; time-lag; cylindrical,glass; 6.3x32mm; 313
Manufacturer series: 313
Kind of fuse: cylindrical; glass; miniature
Type of fuse: fuse
Contact plating: nickel plated
Fuses application: standard applications
Fuse characteristics: time-lag
Operating temperature: -55...125°C
Fuse size: 6.3x32mm
Breaking characteristics: 1In: min 4h; 1.35In: max 1h; 2In: min 5s; 2In: max 30s
Current rating: 12A
Rated voltage: 32V AC
Soldering temperature: 260°C / 5 s
Breaking capacity: 300A
Energy I2t: 1200A2s
Kind of package: bulk
Contact material: brass
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| CCMR07.5TXP |
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Виробник: LITTELFUSE
Category: Other Fuses
Description: Fuse: fuse; 7.5A; 600VAC; 250VDC; time-lag; ceramic,industrial
Rated voltage: 250V DC; 600V AC
Breaking capacity: 200kA
Kind of fuse: ceramic; industrial
Type of fuse: fuse
Fuses application: motors start-up circuits
Fuse characteristics: time-lag
Current rating: 7.5A
Category: Other Fuses
Description: Fuse: fuse; 7.5A; 600VAC; 250VDC; time-lag; ceramic,industrial
Rated voltage: 250V DC; 600V AC
Breaking capacity: 200kA
Kind of fuse: ceramic; industrial
Type of fuse: fuse
Fuses application: motors start-up circuits
Fuse characteristics: time-lag
Current rating: 7.5A
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| 57003-01 |
Виробник: LITTELFUSE
Category: Rocker Switches
Description: ROCKER; Pos: 3; ON-OFF-ON; 25A/12VDC; Leads: connectors; on panel
Type of switch: ROCKER
Number of positions: 3
Stable positions number: 3
Switching method: ON-OFF-ON
DC contacts rating @R: 25A / 12V DC
Leads: connectors
Contact material: silver
Mounting: on panel
Category: Rocker Switches
Description: ROCKER; Pos: 3; ON-OFF-ON; 25A/12VDC; Leads: connectors; on panel
Type of switch: ROCKER
Number of positions: 3
Stable positions number: 3
Switching method: ON-OFF-ON
DC contacts rating @R: 25A / 12V DC
Leads: connectors
Contact material: silver
Mounting: on panel
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| S6025LTP |
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Виробник: LITTELFUSE
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 25A; 16A; Igt: 35mA; TO220ABIns; THT; tube
Features of semiconductor devices: glass passivated
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 35mA
Max. off-state voltage: 0.6kV
Load current: 16A
Max. load current: 25A
Case: TO220ABIns
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 25A; 16A; Igt: 35mA; TO220ABIns; THT; tube
Features of semiconductor devices: glass passivated
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 35mA
Max. off-state voltage: 0.6kV
Load current: 16A
Max. load current: 25A
Case: TO220ABIns
на замовлення 980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 249.82 грн |
| 5+ | 197.93 грн |
| 7+ | 141.72 грн |
| 19+ | 133.80 грн |
| 250+ | 132.22 грн |
| 500+ | 129.05 грн |
| S6025RTP |
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Виробник: LITTELFUSE
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 25A; 16A; Igt: 35mA; TO220AB; THT; tube
Mounting: THT
Case: TO220AB
Type of thyristor: thyristor
Kind of package: tube
Gate current: 35mA
Load current: 16A
Max. load current: 25A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 25A; 16A; Igt: 35mA; TO220AB; THT; tube
Mounting: THT
Case: TO220AB
Type of thyristor: thyristor
Kind of package: tube
Gate current: 35mA
Load current: 16A
Max. load current: 25A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
на замовлення 782 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.41 грн |
| 11+ | 91.05 грн |
| 29+ | 86.30 грн |
| S6025R |
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Виробник: LITTELFUSE
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 25A; 16A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 25A
Load current: 16A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 25A; 16A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 25A
Load current: 16A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: glass passivated
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