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MCAC160N06YHE3-TP MCAC160N06YHE3-TP MCC (Micro Commercial Components) MCAC160N06YHE3(DFN5060).pdf Description: MOSFET N-CH 60 160A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3586 pF @ 20 V
Qualification: AEC-Q101
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MBRB30100CTQ-TP MBRB30100CTQ-TP MCC (Micro Commercial Components) MBRB30100CTQ(D2-PAK).pdf Description: DIODE ARRAY SCHOT 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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MMBD4148TU-TP MMBD4148TU-TP MCC (Micro Commercial Components) MMBD4148TU(SOT23-6L).pdf Description: DIODE ARRAY GP 75V 80MA SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SOT-23-6L
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
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MCACL170N08Y-TP MCACL170N08Y-TP MCC (Micro Commercial Components) MCACL170N08Y(DFN5060).pdf Description: MOSFET N-CH 80 170A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 208W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6452 pF @ 40 V
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BSS84KHE3-TP BSS84KHE3-TP MCC (Micro Commercial Components) BSS84KHE3(SOT-23).pdf Description: SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 400mA, 10V
Power Dissipation (Max): 960mW (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 25 V
Qualification: AEC-Q101
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BCX56-TPQ4 BCX56-TPQ4 MCC (Micro Commercial Components) Description: MEDIUM POWER BIPOLAR TRANSISTOR
Packaging: Tape & Reel (TR)
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MIW60N65AS2Y-BP MIW60N65AS2Y-BP MCC (Micro Commercial Components) Description: IGBT TRENCH FS 650V 80A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 155 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/81ns
Switching Energy: 2.47mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 283 W
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MIF15N65AT0Y-BP MIF15N65AT0Y-BP MCC (Micro Commercial Components) Description: IGBT TRENCH FS 650V 20A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 34 W
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MIP15N65AT0Y-BP MIP15N65AT0Y-BP MCC (Micro Commercial Components) Description: IGBT TRENCH FS 650V 30A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
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MIB15N65AT0Y-TP MIB15N65AT0Y-TP MCC (Micro Commercial Components) MIB15N65AT0Y(D2-PAK).pdf Description: IGBT TRENCH FS 650V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
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MIP20N65AT0Y-BP MIP20N65AT0Y-BP MCC (Micro Commercial Components) MIP20N65AT0Y(TO-220AB).PDF Description: IGBT TRENCH FS 650V 40A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 120 W
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MIF20N65AT0Y-BP MIF20N65AT0Y-BP MCC (Micro Commercial Components) MIF20N65AT0Y(ITO-220AB).PDF Description: IGBT TRENCH FS 650V 25A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 37 W
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UMD3NHE3-TP UMD3NHE3-TP MCC (Micro Commercial Components) UMD3NHE3(SOT-363).pdf Description: TRANS PREBIAS 1NPN 1PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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FMMT591B-TP FMMT591B-TP MCC (Micro Commercial Components) FMMT591B(SOT-23).pdf Description: TRANS PNP 40V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
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FMMT591BHE3-TP FMMT591BHE3-TP MCC (Micro Commercial Components) FMMT591BHE3(SOT-23).pdf Description: TRANS PNP 40V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Qualification: AEC-Q101
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FMMT591HE3-TP FMMT591HE3-TP MCC (Micro Commercial Components) FMMT591HE3(SOT-23).pdf Description: TRANS PNP 60V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Qualification: AEC-Q101
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MIW75N65AH2Y-BP MIW75N65AH2Y-BP MCC (Micro Commercial Components) Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/143ns
Switching Energy: 3.26mJ (on), 840µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 428 W
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MIW85N65AS2Y-BP MIW85N65AS2Y-BP MCC (Micro Commercial Components) Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/116ns
Switching Energy: 3.67mJ (on), 1.26mJ (off)
Test Condition: 400V, 85A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 428 W
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MIW75N65AS2Y-BP MIW75N65AS2Y-BP MCC (Micro Commercial Components) Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/121ns
Switching Energy: 3.12mJ (on), 1.11mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 428 W
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SL26HL-TP SL26HL-TP MCC (Micro Commercial Components) SL24HL_SL210HL(SOD-123HL).pdf Description: DIODE SCHOTTKY 60V 2A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+5.50 грн
Мінімальне замовлення: 2500
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MIF10N65AT0Y-BP MIF10N65AT0Y-BP MCC (Micro Commercial Components) Description: IGBT TRENCH FS 650V 15A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 360µJ (on), 170µJ (off)
Test Condition: 300V, 10A, 51Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 31 W
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MIB10N65AT0Y-TP MIB10N65AT0Y-TP MCC (Micro Commercial Components) MIB10N65AT0Y(D2-PAK).pdf Description: IGBT TRENCH FS 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 360µJ (on), 170µJ (off)
Test Condition: 300V, 10A, 51Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
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UF4007GP-AP-HF UF4007GP-AP-HF MCC (Micro Commercial Components) UF4001GP_UF4007GP(DO-41).PDF Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SIC1060PL8-TP SIC1060PL8-TP MCC (Micro Commercial Components) SIC1060PL8(DFN8080A).pdf Description: DIODE SIL CARB 650V 10A DFN8080A
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+188.20 грн
Мінімальне замовлення: 3000
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SIC1060PL8-TP SIC1060PL8-TP MCC (Micro Commercial Components) SIC1060PL8(DFN8080A).pdf Description: DIODE SIL CARB 650V 10A DFN8080A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1+478.67 грн
10+309.42 грн
100+223.33 грн
500+175.13 грн
1000+170.08 грн
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SK54AFLQ-TP SK54AFLQ-TP MCC (Micro Commercial Components) SK54AFLQ_SK56AFLQ(DO-221AC).pdf Description: DIODE SCHOTTKY 40V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 265pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+10.90 грн
Мінімальне замовлення: 5000
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MCACD60N04YHE3-TP MCACD60N04YHE3-TP MCC (Micro Commercial Components) MCACD60N04YHE3(PDFN5060-8D).pdf Description: MOSFET 2N-CH 40V 60A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
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1N4007GP-AP-HF 1N4007GP-AP-HF MCC (Micro Commercial Components) Description: DIODE STANDARD 1000V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MCW240N10Y-BP MCW240N10Y-BP MCC (Micro Commercial Components) MCW240N10Y(TO-247).pdf Description: POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 312.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16232 pF @ 50 V
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
1+342.84 грн
10+218.65 грн
100+155.38 грн
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SMAJ15CAV-TP MCC (Micro Commercial Components) MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf Description: TVS
Packaging: Tape & Reel (TR)
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GS1MHL-TP GS1MHL-TP MCC (Micro Commercial Components) GS1MHL(SOD-123HL).pdf Description: DIODE STANDARD 1000V 1A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+2.91 грн
Мінімальне замовлення: 2500
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SMBJP6KE15CAV-TP MCC (Micro Commercial Components) MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf Description: TVS
Packaging: Tape & Reel (TR)
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SS14FLQ-TP SS14FLQ-TP MCC (Micro Commercial Components) SS14FLQ_SS16FLQ(DO-221AC).pdf Description: DIODE SCHOTTKY 40V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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BZT52C12HE3-TP-A001 BZT52C12HE3-TP-A001 MCC (Micro Commercial Components) Description: ZENER DIODE
Packaging: Tape & Reel (TR)
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SS210FLQ-TP SS210FLQ-TP MCC (Micro Commercial Components) SS210FLQ_SS220FLQ(DO-221AC).pdf Description: DIODE SCHOTTKY 100V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: DO-221AC (SMA-FL)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+7.56 грн
Мінімальне замовлення: 10000
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SMCJ1.5KE36CAV-TP MCC (Micro Commercial Components) MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf Description: TVS
Packaging: Tape & Reel (TR)
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ES2DHL-TP ES2DHL-TP MCC (Micro Commercial Components) ES2DHL_ES2JHL(SOD-123HL).pdf Description: DIODE STANDARD 200V 2A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+3.95 грн
Мінімальне замовлення: 2500
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SMH80A-TP SMH80A-TP MCC (Micro Commercial Components) SMH5.0A_SMH100A(SOD-123HL).pdf Description: TVS DIODE 80VWM 129VC SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.55A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: SOD-123HL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.8V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 200W
Power Line Protection: No
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ESDHSBULC3V3LB-TP ESDHSBULC3V3LB-TP MCC (Micro Commercial Components) ESDHSBULC3V3LB(DFN1006-2).pdf Description: TVS DIODE 3.3VWM 10VC 2DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 26A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-DFN1006
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 260W
Power Line Protection: No
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SICBG160N120A-TP SICBG160N120A-TP MCC (Micro Commercial Components) SICBG160N120A(TO-263-7L).pdf Description: MOSFET N-CH 1200V 18A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 20V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 3V @ 2.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 16V, 20V
Vgs (Max): +22V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 1000 V
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SS24FLQ-TP SS24FLQ-TP MCC (Micro Commercial Components) SS24FLQ_SS26FLQ(DO-221AC).pdf Description: DIODE SCHOTTKY 40V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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DDTC114ECA-TP DDTC114ECA-TP MCC (Micro Commercial Components) DDTC114ECA(SOT-23).pdf Description: PRE-BIASED TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.68 грн
Мінімальне замовлення: 3000
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SIL3415CHE3-TP SIL3415CHE3-TP MCC (Micro Commercial Components) SIL3415CHE3(SOT23-6L).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Tj)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-6L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Qualification: AEC-Q101
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ST40100CT-BP ST40100CT-BP MCC (Micro Commercial Components) Description: DIODE ARR SCHOT 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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2N7002KDW-13P 2N7002KDW-13P MCC (Micro Commercial Components) 2N7002KDW(SOT-363).PDF Description: MOSFET 2N-CH 60V 0.34A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Tj)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 880pC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
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SMBJP6KE30AQ-TP SMBJP6KE30AQ-TP MCC (Micro Commercial Components) SMBJP6KE6.8AQ_SMBJP6KE220CAQ(SMB).pdf Description: TVS DIODE 25.6VWM 41.4V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 14.5A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MBR1550LPS-TP MBR1550LPS-TP MCC (Micro Commercial Components) Description: DIODE SCHOTTKY 50V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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CSPSBULC18VAE-TP CSPSBULC18VAE-TP MCC (Micro Commercial Components) CSPSBULC18VAE(CSP0201).pdf Description: TVS DIODE 18VWM 8VC CSP0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: CSP0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 35W
Power Line Protection: No
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SMCJ1.5KE110AQ-TP SMCJ1.5KE110AQ-TP MCC (Micro Commercial Components) SMCJ1.5KE6.8AQ_SMCJ1.5KE220CAQ(SMC).pdf Description: TVS DIODE 94VWM 152VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ES2JHL-TP ES2JHL-TP MCC (Micro Commercial Components) ES2DHL_ES2JHL(SOD-123HL).pdf Description: DIODE STANDARD 600V 2A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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AZ23C2V7-TP AZ23C2V7-TP MCC (Micro Commercial Components) AZ23C2V7~AZ23C51(SOT-23).pdf Description: DIODE ZENER ARRAY 2.7V SOT-23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
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AZ23C2V7HE3-TP AZ23C2V7HE3-TP MCC (Micro Commercial Components) AZ23C2V4HE3~AZ23C39HE3(SOT-23).pdf Description: DIODE ZENER ARRAY 2.7V SOT-23
Tolerance: ±7.41%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
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AZ23C2V7W-TP AZ23C2V7W-TP MCC (Micro Commercial Components) AZ23C2V7W~AZ23C39W(SOT-323).pdf Description: DIODE ZENER ARRAY 2.7V SOT-323
Tolerance: ±5%
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
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GBL410S-BP GBL410S-BP MCC (Micro Commercial Components) GBL410S(GBL).pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MCACD50N04YHE3-TP MCACD50N04YHE3-TP MCC (Micro Commercial Components) MCACD50N04YHE3(PDFN5060-8D).pdf Description: MOSFET 2N-CH 40V 50A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 42W (Tj)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1392pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
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SMCJ30CAQ-TP SMCJ30CAQ-TP MCC (Micro Commercial Components) SMCJ5.0AQ_SMCJ190CAQ(SMC).pdf Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MJD31CS-TP MJD31CS-TP MCC (Micro Commercial Components) MJD31CS(DPAK).pdf Description: TRANS NPN 100V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+12.14 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MJD31CS-TP MJD31CS-TP MCC (Micro Commercial Components) MJD31CS(DPAK).pdf Description: TRANS NPN 100V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
7+50.73 грн
11+30.34 грн
100+19.53 грн
500+13.92 грн
1000+12.51 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MMBZ5250BW-TP MMBZ5250BW-TP MCC (Micro Commercial Components) MMBZ5221BW-MMBZ5259BW(SOT-323).pdf Description: DIODE ZENER 20V 200MW SOT323
Packaging: Bulk
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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SI3134KEA-13P SI3134KEA-13P MCC (Micro Commercial Components) SI3134KEA(SOT-523).pdf Description: SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 16 V
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MCAC160N06YHE3-TP MCAC160N06YHE3(DFN5060).pdf
MCAC160N06YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 60 160A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3586 pF @ 20 V
Qualification: AEC-Q101
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MBRB30100CTQ-TP MBRB30100CTQ(D2-PAK).pdf
MBRB30100CTQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARRAY SCHOT 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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MMBD4148TU-TP MMBD4148TU(SOT23-6L).pdf
MMBD4148TU-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARRAY GP 75V 80MA SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SOT-23-6L
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
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MCACL170N08Y-TP MCACL170N08Y(DFN5060).pdf
MCACL170N08Y-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 80 170A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 208W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6452 pF @ 40 V
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BSS84KHE3-TP BSS84KHE3(SOT-23).pdf
BSS84KHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 400mA, 10V
Power Dissipation (Max): 960mW (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 25 V
Qualification: AEC-Q101
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BCX56-TPQ4
BCX56-TPQ4
Виробник: MCC (Micro Commercial Components)
Description: MEDIUM POWER BIPOLAR TRANSISTOR
Packaging: Tape & Reel (TR)
товару немає в наявності
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MIW60N65AS2Y-BP
MIW60N65AS2Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 80A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 155 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/81ns
Switching Energy: 2.47mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 283 W
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MIF15N65AT0Y-BP
MIF15N65AT0Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 20A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 34 W
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MIP15N65AT0Y-BP
MIP15N65AT0Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 30A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
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MIB15N65AT0Y-TP MIB15N65AT0Y(D2-PAK).pdf
MIB15N65AT0Y-TP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
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MIP20N65AT0Y-BP MIP20N65AT0Y(TO-220AB).PDF
MIP20N65AT0Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 40A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 120 W
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MIF20N65AT0Y-BP MIF20N65AT0Y(ITO-220AB).PDF
MIF20N65AT0Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 25A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 37 W
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UMD3NHE3-TP UMD3NHE3(SOT-363).pdf
UMD3NHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PREBIAS 1NPN 1PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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FMMT591B-TP FMMT591B(SOT-23).pdf
FMMT591B-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 40V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
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FMMT591BHE3-TP FMMT591BHE3(SOT-23).pdf
FMMT591BHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 40V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Qualification: AEC-Q101
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FMMT591HE3-TP FMMT591HE3(SOT-23).pdf
FMMT591HE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 60V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Qualification: AEC-Q101
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MIW75N65AH2Y-BP
MIW75N65AH2Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/143ns
Switching Energy: 3.26mJ (on), 840µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 428 W
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MIW85N65AS2Y-BP
MIW85N65AS2Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/116ns
Switching Energy: 3.67mJ (on), 1.26mJ (off)
Test Condition: 400V, 85A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 428 W
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MIW75N65AS2Y-BP
MIW75N65AS2Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/121ns
Switching Energy: 3.12mJ (on), 1.11mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 428 W
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SL26HL-TP SL24HL_SL210HL(SOD-123HL).pdf
SL26HL-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 60V 2A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+5.50 грн
Мінімальне замовлення: 2500
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MIF10N65AT0Y-BP
MIF10N65AT0Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 15A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 360µJ (on), 170µJ (off)
Test Condition: 300V, 10A, 51Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 31 W
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MIB10N65AT0Y-TP MIB10N65AT0Y(D2-PAK).pdf
MIB10N65AT0Y-TP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 360µJ (on), 170µJ (off)
Test Condition: 300V, 10A, 51Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
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UF4007GP-AP-HF UF4001GP_UF4007GP(DO-41).PDF
UF4007GP-AP-HF
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SIC1060PL8-TP SIC1060PL8(DFN8080A).pdf
SIC1060PL8-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SIL CARB 650V 10A DFN8080A
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+188.20 грн
Мінімальне замовлення: 3000
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SIC1060PL8-TP SIC1060PL8(DFN8080A).pdf
SIC1060PL8-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SIL CARB 650V 10A DFN8080A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+478.67 грн
10+309.42 грн
100+223.33 грн
500+175.13 грн
1000+170.08 грн
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SK54AFLQ-TP SK54AFLQ_SK56AFLQ(DO-221AC).pdf
SK54AFLQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 265pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+10.90 грн
Мінімальне замовлення: 5000
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MCACD60N04YHE3-TP MCACD60N04YHE3(PDFN5060-8D).pdf
MCACD60N04YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 40V 60A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
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1N4007GP-AP-HF
1N4007GP-AP-HF
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MCW240N10Y-BP MCW240N10Y(TO-247).pdf
MCW240N10Y-BP
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 312.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16232 pF @ 50 V
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+342.84 грн
10+218.65 грн
100+155.38 грн
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SMAJ15CAV-TP MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf
Виробник: MCC (Micro Commercial Components)
Description: TVS
Packaging: Tape & Reel (TR)
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GS1MHL-TP GS1MHL(SOD-123HL).pdf
GS1MHL-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 1A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+2.91 грн
Мінімальне замовлення: 2500
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SMBJP6KE15CAV-TP MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf
Виробник: MCC (Micro Commercial Components)
Description: TVS
Packaging: Tape & Reel (TR)
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SS14FLQ-TP SS14FLQ_SS16FLQ(DO-221AC).pdf
SS14FLQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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BZT52C12HE3-TP-A001
BZT52C12HE3-TP-A001
Виробник: MCC (Micro Commercial Components)
Description: ZENER DIODE
Packaging: Tape & Reel (TR)
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SS210FLQ-TP SS210FLQ_SS220FLQ(DO-221AC).pdf
SS210FLQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 100V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: DO-221AC (SMA-FL)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+7.56 грн
Мінімальне замовлення: 10000
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SMCJ1.5KE36CAV-TP MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf
Виробник: MCC (Micro Commercial Components)
Description: TVS
Packaging: Tape & Reel (TR)
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ES2DHL-TP ES2DHL_ES2JHL(SOD-123HL).pdf
ES2DHL-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 200V 2A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+3.95 грн
Мінімальне замовлення: 2500
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SMH80A-TP SMH5.0A_SMH100A(SOD-123HL).pdf
SMH80A-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 80VWM 129VC SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.55A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: SOD-123HL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.8V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 200W
Power Line Protection: No
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ESDHSBULC3V3LB-TP ESDHSBULC3V3LB(DFN1006-2).pdf
ESDHSBULC3V3LB-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 3.3VWM 10VC 2DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 26A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-DFN1006
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 260W
Power Line Protection: No
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SICBG160N120A-TP SICBG160N120A(TO-263-7L).pdf
SICBG160N120A-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 1200V 18A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 20V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 3V @ 2.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 16V, 20V
Vgs (Max): +22V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 1000 V
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SS24FLQ-TP SS24FLQ_SS26FLQ(DO-221AC).pdf
SS24FLQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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DDTC114ECA-TP DDTC114ECA(SOT-23).pdf
DDTC114ECA-TP
Виробник: MCC (Micro Commercial Components)
Description: PRE-BIASED TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.68 грн
Мінімальне замовлення: 3000
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SIL3415CHE3-TP SIL3415CHE3(SOT23-6L).pdf
SIL3415CHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Tj)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-6L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Qualification: AEC-Q101
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ST40100CT-BP
ST40100CT-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOT 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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2N7002KDW-13P 2N7002KDW(SOT-363).PDF
2N7002KDW-13P
Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 60V 0.34A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Tj)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 880pC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
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SMBJP6KE30AQ-TP SMBJP6KE6.8AQ_SMBJP6KE220CAQ(SMB).pdf
SMBJP6KE30AQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 25.6VWM 41.4V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 14.5A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MBR1550LPS-TP
MBR1550LPS-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 50V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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CSPSBULC18VAE-TP CSPSBULC18VAE(CSP0201).pdf
CSPSBULC18VAE-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 18VWM 8VC CSP0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: CSP0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 35W
Power Line Protection: No
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SMCJ1.5KE110AQ-TP SMCJ1.5KE6.8AQ_SMCJ1.5KE220CAQ(SMC).pdf
SMCJ1.5KE110AQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 94VWM 152VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ES2JHL-TP ES2DHL_ES2JHL(SOD-123HL).pdf
ES2JHL-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 600V 2A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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AZ23C2V7-TP AZ23C2V7~AZ23C51(SOT-23).pdf
AZ23C2V7-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER ARRAY 2.7V SOT-23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
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AZ23C2V7HE3-TP AZ23C2V4HE3~AZ23C39HE3(SOT-23).pdf
AZ23C2V7HE3-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER ARRAY 2.7V SOT-23
Tolerance: ±7.41%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
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AZ23C2V7W-TP AZ23C2V7W~AZ23C39W(SOT-323).pdf
AZ23C2V7W-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER ARRAY 2.7V SOT-323
Tolerance: ±5%
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
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GBL410S-BP GBL410S(GBL).pdf
GBL410S-BP
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MCACD50N04YHE3-TP MCACD50N04YHE3(PDFN5060-8D).pdf
MCACD50N04YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 40V 50A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 42W (Tj)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1392pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
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SMCJ30CAQ-TP SMCJ5.0AQ_SMCJ190CAQ(SMC).pdf
SMCJ30CAQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MJD31CS-TP MJD31CS(DPAK).pdf
MJD31CS-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS NPN 100V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+12.14 грн
Мінімальне замовлення: 2500
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MJD31CS-TP MJD31CS(DPAK).pdf
MJD31CS-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS NPN 100V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.73 грн
11+30.34 грн
100+19.53 грн
500+13.92 грн
1000+12.51 грн
Мінімальне замовлення: 7
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MMBZ5250BW-TP MMBZ5221BW-MMBZ5259BW(SOT-323).pdf
MMBZ5250BW-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 20V 200MW SOT323
Packaging: Bulk
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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SI3134KEA-13P SI3134KEA(SOT-523).pdf
SI3134KEA-13P
Виробник: MCC (Micro Commercial Components)
Description: SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 16 V
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