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FR1002GP-TP FR1002GP-TP Micro Commercial Co FR1001GP-FR1007GP(R-6).pdf Description: DIODE GEN PURP 100V 10A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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FR1002-AP FR1002-AP Micro Commercial Co FR1001-FR1007%28R-6%29.pdf Description: DIODE GEN PURP 100V 10A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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3GBJ3516-BP-HF 3GBJ3516-BP-HF Micro Commercial Co Description: BRIDGE RECTIFIERS
Packaging: Tape & Reel (TR)
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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6A10 6A10 Micro Commercial Co 6A05-6A10.pdf Description: DIODE GEN PURP 1KV 6A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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6A10 6A10 Micro Commercial Co 6A05-6A10.pdf Description: DIODE GEN PURP 1KV 6A R-6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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DDTA113ZCA-TP DDTA113ZCA-TP Micro Commercial Co DDTA113ZCA(SOT-23).pdf Description: PRE-BIASED TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+4.75 грн
6000+3.98 грн
Мінімальне замовлення: 3000
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DDTA113ZCA-TP DDTA113ZCA-TP Micro Commercial Co DDTA113ZCA(SOT-23).pdf Description: PRE-BIASED TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
12+26.99 грн
15+21.41 грн
25+17.89 грн
100+10.64 грн
250+8.21 грн
500+7.00 грн
1000+4.68 грн
Мінімальне замовлення: 12
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DDTA113ZUA-TP DDTA113ZUA-TP Micro Commercial Co Description: DIGITAL TRANSISTOR PNP SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DDTA113ZUA-TP DDTA113ZUA-TP Micro Commercial Co Description: DIGITAL TRANSISTOR PNP SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTA113ZCA-TP DTA113ZCA-TP Micro Commercial Co DTA113ZCA(SOT-23).pdf Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
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DTA113ZUA-TP DTA113ZUA-TP Micro Commercial Co DTA113ZUA(SOT-323).pdf Description: BIPOLAR TRANSISTORS
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
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DTC114YM-TP DTC114YM-TP Micro Commercial Co DTC114YM(SOT-723).pdf Description: BIPOLAR TRANSISTORS
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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RL253GP-BP Micro Commercial Co RL251GP-RL257GP(R-3).pdf Description: Interface
Packaging: Bulk
Package / Case: R-3, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: R-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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UMC4N-TP UMC4N-TP Micro Commercial Co UMC4N.pdf Description: TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-353
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DTA123EUA-TP DTA123EUA-TP Micro Commercial Co DTA123EUA(SOT-323).pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+3.26 грн
6000+2.91 грн
Мінімальне замовлення: 3000
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DTA123EUA-TP DTA123EUA-TP Micro Commercial Co DTA123EUA(SOT-323).pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
20+16.67 грн
32+9.79 грн
100+6.09 грн
500+4.18 грн
1000+3.68 грн
Мінімальне замовлення: 20
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SMBJ14AQ-TP SMBJ14AQ-TP Micro Commercial Co SMBJ5.0AQ_SMBJ190CAQ(SMB).pdf Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S14A-TP SM8S14A-TP Micro Commercial Co SM8S10A-SM8S43A(DO-218AB).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S14AHE3-TP SM8S14AHE3-TP Micro Commercial Co SM8S10AHE3-SM8S43CAHE3(DO-218AB).pdf Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4KE91A-AP P4KE91A-AP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE91A-BP P4KE91A-BP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE91A-TP P4KE91A-TP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJP4KE91A-TP SMAJP4KE91A-TP Micro Commercial Co SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJP4KE91AHE3-TP SMAJP4KE91AHE3-TP Micro Commercial Co SMAJP4KE12(C)AHE3-SMAJP4KE220(C)AHE3(DO-214AC).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJP4KE91AQ-TP SMAJP4KE91AQ-TP Micro Commercial Co SMAJP4KE6.8AQ_SMAJP4KE220CAQ(SMA).pdf Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.45V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJP6KE91AQ-TP SMBJP6KE91AQ-TP Micro Commercial Co SMBJP6KE6.8AQ_SMBJP6KE220CAQ(SMB).pdf Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.45V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MCU029N10YLHE3-TP MCU029N10YLHE3-TP Micro Commercial Co MCU029N10YLHE3(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 20A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 537 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+30.41 грн
5000+27.41 грн
Мінімальне замовлення: 2500
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MCU029N10YLHE3-TP MCU029N10YLHE3-TP Micro Commercial Co MCU029N10YLHE3(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 20A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 537 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3+107.97 грн
10+65.98 грн
25+55.81 грн
100+41.57 грн
250+36.28 грн
500+33.05 грн
1000+29.86 грн
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1F1G-AP Micro Commercial Co 1F1G_thru_1F7G.pdf Description: DIODE GEN PURP 50V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1F5G-AP Micro Commercial Co 1F1G_thru_1F7G.pdf Description: DIODE GEN PURP 600V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1F7G-AP Micro Commercial Co 1F1G_thru_1F7G.pdf Description: DIODE GEN PURP 1KV 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1A1-AP Micro Commercial Co 1A1-1A7.pdf Description: DIODE GEN PURP 50V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1A3-AP Micro Commercial Co 1A1-1A7.pdf Description: DIODE GEN PURP 200V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1A4-AP Micro Commercial Co 1A1-1A7.pdf Description: DIODE GEN PURP 400V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1A5-AP Micro Commercial Co 1A1-1A7.pdf Description: DIODE GEN PURP 600V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1A6-AP Micro Commercial Co 1A1-1A7.pdf Description: DIODE GEN PURP 800V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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1F1-AP Micro Commercial Co 1F1-1F7%28R-1%29.pdf Description: DIODE GEN PURP 50V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1F2-AP Micro Commercial Co 1F1-1F7%28R-1%29.pdf Description: DIODE GEN PURP 100V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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1F3-AP Micro Commercial Co 1F1-1F7%28R-1%29.pdf Description: DIODE GEN PURP 200V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1F4-AP Micro Commercial Co 1F1-1F7%28R-1%29.pdf Description: DIODE GEN PURP 400V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1F5-AP Micro Commercial Co 1F1-1F7%28R-1%29.pdf Description: DIODE GEN PURP 600V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1F6-AP Micro Commercial Co 1F1-1F7%28R-1%29.pdf Description: DIODE GEN PURP 800V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MCACD12NP10YHE3-TP MCACD12NP10YHE3-TP Micro Commercial Co MCACD12NP10YHE3(PDFN5060-8D).pdf Description: MOSFET N/P-CH 100V 40A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 104W (Tj), 69W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V, 1120pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V, 115mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
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1N5953BP-TP 1N5953BP-TP Micro Commercial Co 1N5918BP-1N5956BP(DO-41).pdf Description: Interface
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 114 V
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1N5953B3P-TP 1N5953B3P-TP Micro Commercial Co 1N5918B3P-1N5956B3P(DO-41).pdf Description: Interface
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-41
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 114 V
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UMH10NHE3-TP UMH10NHE3-TP Micro Commercial Co UMH10NHE3(SOT-363).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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UMH2NHE3-TP UMH2NHE3-TP Micro Commercial Co UMH2NHE3(SOT-363).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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SR3010-BP SR3010-BP Micro Commercial Co SR305-SR3010(DO-201AD).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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BZX584C4V7-TP BZX584C4V7-TP Micro Commercial Co BZX584C2V4~BZX584C39(SOD-523).pdf Description: Interface
Packaging: Bulk
Tolerance: ±6.38%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
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BZX584C4V7HE3-TP BZX584C4V7HE3-TP Micro Commercial Co BZX584C2V4HE3_BZX584C39HE3(SOD-523).pdf Description: Interface
Packaging: Bulk
Tolerance: ±6.38%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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ESDLC5V0P7B-TP ESDLC5V0P7B-TP Micro Commercial Co ESDLC5V0P7B(DFN1510-6A).pdf Description: TVS DIODE 5VWM 12VC DFN15106
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1510-6
Bidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 24W
Power Line Protection: No
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1N6005B-TP 1N6005B-TP Micro Commercial Co 1N5985B-1N6016B_DS.pdf Description: DIODE ZENER 16V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 36 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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P4KE12A-BP P4KE12A-BP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE12A-AP P4KE12A-AP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE120CA-AP P4KE120CA-AP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE120A-AP P4KE120A-AP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE120CA-BP P4KE120CA-BP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE120A-BP P4KE120A-BP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJP4KE12A-TP SMAJP4KE12A-TP Micro Commercial Co SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJP4KE120A-TP SMAJP4KE120A-TP Micro Commercial Co SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
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FR1002GP-TP FR1001GP-FR1007GP(R-6).pdf
FR1002GP-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 100V 10A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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FR1002-AP FR1001-FR1007%28R-6%29.pdf
FR1002-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 100V 10A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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3GBJ3516-BP-HF
3GBJ3516-BP-HF
Виробник: Micro Commercial Co
Description: BRIDGE RECTIFIERS
Packaging: Tape & Reel (TR)
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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6A10 6A05-6A10.pdf
6A10
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1KV 6A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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6A10 6A05-6A10.pdf
6A10
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1KV 6A R-6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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DDTA113ZCA-TP DDTA113ZCA(SOT-23).pdf
DDTA113ZCA-TP
Виробник: Micro Commercial Co
Description: PRE-BIASED TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.75 грн
6000+3.98 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DDTA113ZCA-TP DDTA113ZCA(SOT-23).pdf
DDTA113ZCA-TP
Виробник: Micro Commercial Co
Description: PRE-BIASED TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+26.99 грн
15+21.41 грн
25+17.89 грн
100+10.64 грн
250+8.21 грн
500+7.00 грн
1000+4.68 грн
Мінімальне замовлення: 12
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DDTA113ZUA-TP
DDTA113ZUA-TP
Виробник: Micro Commercial Co
Description: DIGITAL TRANSISTOR PNP SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DDTA113ZUA-TP
DDTA113ZUA-TP
Виробник: Micro Commercial Co
Description: DIGITAL TRANSISTOR PNP SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTA113ZCA-TP DTA113ZCA(SOT-23).pdf
DTA113ZCA-TP
Виробник: Micro Commercial Co
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
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DTA113ZUA-TP DTA113ZUA(SOT-323).pdf
DTA113ZUA-TP
Виробник: Micro Commercial Co
Description: BIPOLAR TRANSISTORS
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
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DTC114YM-TP DTC114YM(SOT-723).pdf
DTC114YM-TP
Виробник: Micro Commercial Co
Description: BIPOLAR TRANSISTORS
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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RL253GP-BP RL251GP-RL257GP(R-3).pdf
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: R-3, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: R-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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UMC4N-TP UMC4N.pdf
UMC4N-TP
Виробник: Micro Commercial Co
Description: TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-353
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DTA123EUA-TP DTA123EUA(SOT-323).pdf
DTA123EUA-TP
Виробник: Micro Commercial Co
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.26 грн
6000+2.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTA123EUA-TP DTA123EUA(SOT-323).pdf
DTA123EUA-TP
Виробник: Micro Commercial Co
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+16.67 грн
32+9.79 грн
100+6.09 грн
500+4.18 грн
1000+3.68 грн
Мінімальне замовлення: 20
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SMBJ14AQ-TP SMBJ5.0AQ_SMBJ190CAQ(SMB).pdf
SMBJ14AQ-TP
Виробник: Micro Commercial Co
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S14A-TP SM8S10A-SM8S43A(DO-218AB).pdf
SM8S14A-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S14AHE3-TP SM8S10AHE3-SM8S43CAHE3(DO-218AB).pdf
SM8S14AHE3-TP
Виробник: Micro Commercial Co
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4KE91A-AP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE91A-AP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE91A-BP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE91A-BP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE91A-TP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE91A-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJP4KE91A-TP SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf
SMAJP4KE91A-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJP4KE91AHE3-TP SMAJP4KE12(C)AHE3-SMAJP4KE220(C)AHE3(DO-214AC).pdf
SMAJP4KE91AHE3-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJP4KE91AQ-TP SMAJP4KE6.8AQ_SMAJP4KE220CAQ(SMA).pdf
SMAJP4KE91AQ-TP
Виробник: Micro Commercial Co
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.45V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJP6KE91AQ-TP SMBJP6KE6.8AQ_SMBJP6KE220CAQ(SMB).pdf
SMBJP6KE91AQ-TP
Виробник: Micro Commercial Co
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.45V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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MCU029N10YLHE3-TP MCU029N10YLHE3(DPAK).pdf
MCU029N10YLHE3-TP
Виробник: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 20A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 537 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+30.41 грн
5000+27.41 грн
Мінімальне замовлення: 2500
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MCU029N10YLHE3-TP MCU029N10YLHE3(DPAK).pdf
MCU029N10YLHE3-TP
Виробник: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 20A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 537 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+107.97 грн
10+65.98 грн
25+55.81 грн
100+41.57 грн
250+36.28 грн
500+33.05 грн
1000+29.86 грн
Мінімальне замовлення: 3
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1F1G-AP 1F1G_thru_1F7G.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1F5G-AP 1F1G_thru_1F7G.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1F7G-AP 1F1G_thru_1F7G.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1A1-AP 1A1-1A7.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1A3-AP 1A1-1A7.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1A4-AP 1A1-1A7.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1A5-AP 1A1-1A7.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1A6-AP 1A1-1A7.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 800V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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1F1-AP 1F1-1F7%28R-1%29.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1F2-AP 1F1-1F7%28R-1%29.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 100V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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1F3-AP 1F1-1F7%28R-1%29.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1F4-AP 1F1-1F7%28R-1%29.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1F5-AP 1F1-1F7%28R-1%29.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1F6-AP 1F1-1F7%28R-1%29.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 800V 1A R-1
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MCACD12NP10YHE3-TP MCACD12NP10YHE3(PDFN5060-8D).pdf
MCACD12NP10YHE3-TP
Виробник: Micro Commercial Co
Description: MOSFET N/P-CH 100V 40A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 104W (Tj), 69W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V, 1120pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V, 115mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
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1N5953BP-TP 1N5918BP-1N5956BP(DO-41).pdf
1N5953BP-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 114 V
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1N5953B3P-TP 1N5918B3P-1N5956B3P(DO-41).pdf
1N5953B3P-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-41
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 114 V
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UMH10NHE3-TP UMH10NHE3(SOT-363).pdf
UMH10NHE3-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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UMH2NHE3-TP UMH2NHE3(SOT-363).pdf
UMH2NHE3-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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SR3010-BP SR305-SR3010(DO-201AD).pdf
SR3010-BP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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BZX584C4V7-TP BZX584C2V4~BZX584C39(SOD-523).pdf
BZX584C4V7-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Tolerance: ±6.38%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
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BZX584C4V7HE3-TP BZX584C2V4HE3_BZX584C39HE3(SOD-523).pdf
BZX584C4V7HE3-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Tolerance: ±6.38%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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ESDLC5V0P7B-TP ESDLC5V0P7B(DFN1510-6A).pdf
ESDLC5V0P7B-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 5VWM 12VC DFN15106
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1510-6
Bidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 24W
Power Line Protection: No
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1N6005B-TP 1N5985B-1N6016B_DS.pdf
1N6005B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 16V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 36 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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P4KE12A-BP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE12A-BP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE12A-AP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE12A-AP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE120CA-AP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE120CA-AP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE120A-AP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE120A-AP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE120CA-BP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE120CA-BP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
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P4KE120A-BP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE120A-BP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
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SMAJP4KE12A-TP SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf
SMAJP4KE12A-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
SMAJP4KE120A-TP SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf
SMAJP4KE120A-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
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