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MCU10N10-TP MCU10N10-TP Micro Commercial Co MCU10N10.pdf Description: MOSFET N-CH 100V 9.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tj)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
товару немає в наявності
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MMBD2004S-TP MMBD2004S-TP Micro Commercial Co MMBD2004S(SOT-23).pdf Description: DIODE ARRAY GP 300V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.28 грн
Мінімальне замовлення: 3000
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P4KE10A-TP P4KE10A-TP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: TVS DIODE 8.55VWM 14.5VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товару немає в наявності
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R3000FGP-TP R3000FGP-TP Micro Commercial Co R3000FGP(DO-41).pdf Description: DIODE GEN PURP 3KV 200MA DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 5 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3000 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+22.68 грн
Мінімальне замовлення: 5000
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R3000GP-TP R3000GP-TP Micro Commercial Co R3000GP-R6000GP(DO-15).pdf Description: 200MAHIGH VOLTAGEDO-15
товару немає в наявності
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R5000GP-TP R5000GP-TP Micro Commercial Co R3000GP-R6000GP(DO-15).pdf Description: 0.2AHIGH VOLTAGE SILICON RECTIFI
товару немає в наявності
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RB717F-TP RB717F-TP Micro Commercial Co RB717F(SOT-323).pdf Description: DIODE ARR SCHOTT 40V 30MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.65 грн
Мінімальне замовлення: 3000
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SD15C-TP SD15C-TP Micro Commercial Co SD15C~SD24C(SOD-323).pdf Description: TVS DIODE 15VWM 40VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Obsolete
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SI2101-TP SI2101-TP Micro Commercial Co SI2101(SOT-323).pdf Description: MOSFET P-CH 20V 1.4A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 8 V
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SI2102-TP SI2102-TP Micro Commercial Co SI2102(SOT-323).pdf Description: MOSFET N-CH 20V 2.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tj)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+6.85 грн
6000+5.98 грн
9000+5.66 грн
Мінімальне замовлення: 3000
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SMBJ250A-TP SMBJ250A-TP Micro Commercial Co SMBJ5.0-SMBJ440CA(DO-214AA).pdf Description: TVS DIODE 250VWM 405VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 279V
Voltage - Clamping (Max) @ Ipp: 405V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJP6KE170A-TP SMBJP6KE170A-TP Micro Commercial Co SMBJP6KE6.8%28C%29A-SMBJP6KE550%28C%29A%28DO-214AA%29.pdf Description: TVS DIODE 145VWM 234VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 600W
Power Line Protection: No
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MCU20N15-TP MCU20N15-TP Micro Commercial Co MCU20N15(DPAK).pdf Description: N-CHANNEL MOSFET, DPAK PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 68W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
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MCS2305B-TP MCS2305B-TP Micro Commercial Co MCS2305B.pdf Description: MOSFET P-CH 20V 8.2A 8TSSOP
товару немає в наявності
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MCU20N15-TP MCU20N15-TP Micro Commercial Co MCU20N15(DPAK).pdf Description: N-CHANNEL MOSFET, DPAK PACKAGE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 68W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
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MCS2305B-TP MCS2305B-TP Micro Commercial Co MCS2305B.pdf Description: MOSFET P-CH 20V 8.2A 8TSSOP
на замовлення 4457 шт:
термін постачання 21-31 дні (днів)
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LMB210S-TP LMB210S-TP Micro Commercial Co LMB24S-LMB210S(LMBS-1).pdf Description: BRIDGE RECT 100V 2A LMBS-1
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Schottky
Supplier Device Package: LMBS-1
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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LMB26S-TP Micro Commercial Co Description: BRIDGE RECT 60V 2A LMBS-1
товару немає в наявності
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LMB210S-TP LMB210S-TP Micro Commercial Co LMB24S-LMB210S(LMBS-1).pdf Description: BRIDGE RECT 100V 2A LMBS-1
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Schottky
Supplier Device Package: LMBS-1
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 3310 шт:
термін постачання 21-31 дні (днів)
7+47.96 грн
10+39.44 грн
100+27.44 грн
500+20.10 грн
1000+16.34 грн
2000+14.61 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
LMB26S-TP Micro Commercial Co Description: BRIDGE RECT 60V 2A LMBS-1
на замовлення 3615 шт:
термін постачання 21-31 дні (днів)
6+55.03 грн
10+45.42 грн
100+33.89 грн
500+24.99 грн
1000+19.31 грн
2000+17.60 грн
Мінімальне замовлення: 6
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MSJW20N65-BP MSJW20N65-BP Micro Commercial Co MSJW20N65(TO-247).pdf Description: MOSFET N-CH TO247
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MCAC80N045Y-TP MCAC80N045Y-TP Micro Commercial Co MCAC80N045Y(DFN5060).pdf Description: MOSFET N-CH 45 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2554 pF @ 20 V
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MCU12P06-TP MCU12P06-TP Micro Commercial Co MCU12P06(DPAK).pdf Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
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MCAC80N045Y-TP MCAC80N045Y-TP Micro Commercial Co MCAC80N045Y(DFN5060).pdf Description: MOSFET N-CH 45 80A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2554 pF @ 20 V
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MCU12P06-TP MCU12P06-TP Micro Commercial Co MCU12P06(DPAK).pdf Description: MOSFET P-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
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P4KE30A-TP P4KE30A-TP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: TVS DIODE 25.6VWM 41.4VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
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DL5232B-TP DL5232B-TP Micro Commercial Co DL5221-DL5267.pdf Description: DIODE ZENER 5.6V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)
2500+4.77 грн
5000+3.99 грн
12500+3.40 грн
25000+3.00 грн
62500+2.81 грн
Мінімальне замовлення: 2500
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P4KE39A-TP P4KE39A-TP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+6.68 грн
Мінімальне замовлення: 5000
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BC558C-AP BC558C-AP Micro Commercial Co BC556x,BC557x,BC558x.pdf Description: TRANS PNP 30V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPS751-BP MPS751-BP Micro Commercial Co MPS751(TO-92)-V1.pdf Description: TRANS PNP 60V 2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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M8050-C-AP M8050-C-AP Micro Commercial Co M8050(TO-92)-V1.pdf Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2SA684-AP Micro Commercial Co 2SA684%28TO-92L%29-V1.pdf Description: TRANS PNP 50V 1A TO92L
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92L
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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BC548C-BP BC548C-BP Micro Commercial Co BC546-BC548(TO-92)-V1.pdf Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2SA684-BP Micro Commercial Co 2SA684%28TO-92L%29-V1.pdf Description: TRANS PNP 50V 1A TO92L
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92L
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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BC548B-AP BC548B-AP Micro Commercial Co BC546-BC548(TO-92)-V1.pdf Description: TRANS NPN 30V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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KSD471A-Y-BP KSD471A-Y-BP Micro Commercial Co KSD471A-x(TO-92).pdf Description: TRANS NPN 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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BC548A-BP BC548A-BP Micro Commercial Co BC546-BC548(TO-92)-V1.pdf Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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BC548A-AP BC548A-AP Micro Commercial Co BC546-BC548(TO-92)-V1.pdf Description: TRANS NPN 30V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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BC558C-BP BC558C-BP Micro Commercial Co BC556x,BC557x,BC558x.pdf Description: TRANS PNP 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MC79L05BP-BP MC79L05BP-BP Micro Commercial Co MC79L05BP(TO-92)-V1.pdf Description: IC REG LINEAR -5V 100MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -30°C ~ 75°C (TJ)
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -30V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): -5V
Part Status: Obsolete
PSRR: 71dB (120Hz)
Protection Features: Over Temperature, Short Circuit
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MPS751-AP MPS751-AP Micro Commercial Co MPS751(TO-92)-V1.pdf Description: TRANS PNP 60V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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MPSA93-BP MPSA93-BP Micro Commercial Co MPSA93(TO-92)-V1.pdf Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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MC78L06BP-BP MC78L06BP-BP Micro Commercial Co MC78L06BP%28TO-92%29-V1.pdf Description: IC REG LINEAR 6V 100MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -20°C ~ 120°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 6V
Part Status: Obsolete
PSRR: 46dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
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KSD471A-G-BP KSD471A-G-BP Micro Commercial Co KSD471A-x(TO-92).pdf Description: TRANS NPN 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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M8050-D-BP M8050-D-BP Micro Commercial Co M8050(TO-92)-V1.pdf Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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KSD471A-O-BP KSD471A-O-BP Micro Commercial Co KSD471A-x(TO-92).pdf Description: TRANS NPN 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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M8050-C-BP M8050-C-BP Micro Commercial Co M8050(TO-92)-V1.pdf Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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MPS651-BP MPS651-BP Micro Commercial Co MPS651%28TO-92%29-V1.pdf Description: TRANS NPN 60V 2A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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SS8050-C-AP SS8050-C-AP Micro Commercial Co SS8050(TO-92).pdf Description: TRANS NPN 25V 1.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
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BC369-AP BC369-AP Micro Commercial Co BC369(TO-92)-V1.pdf Description: TRANS PNP 20V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
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BC548B-BP BC548B-BP Micro Commercial Co BC546-BC548(TO-92)-V1.pdf Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPS651-AP MPS651-AP Micro Commercial Co MPS651%28TO-92%29-V1.pdf Description: TRANS NPN 60V 2A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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BC369-BP BC369-BP Micro Commercial Co BC369(TO-92)-V1.pdf Description: TRANS PNP 20V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
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BF423-BP BF423-BP Micro Commercial Co BF421,BF423(TO-92)-V1.pdf Description: TRANS PNP 250V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 830 mW
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2N4124-BP 2N4124-BP Micro Commercial Co 2N4123_2N4124.pdf Description: TRANS NPN 25V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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M8050-D-AP M8050-D-AP Micro Commercial Co M8050(TO-92)-V1.pdf Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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MPSA43-BP MPSA43-BP Micro Commercial Co MPSA42,MPSA43(TO-92)-V1.pdf Description: TRANS NPN 200V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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BF423-AP BF423-AP Micro Commercial Co BF421,BF423(TO-92)-V1.pdf Description: TRANS PNP 250V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 830 mW
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HER307G-AP HER307G-AP Micro Commercial Co HER301G~HER308G(DO-201AD).pdf Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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BZT52B27JS-TP BZT52B27JS-TP Micro Commercial Co BZT52B3V0JS-BZT52B75JS(200mW)(SOD-323).pdf Description: DIODE ZENER 27V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
товару немає в наявності
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MCU10N10-TP MCU10N10.pdf
MCU10N10-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 100V 9.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tj)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
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MMBD2004S-TP MMBD2004S(SOT-23).pdf
MMBD2004S-TP
Виробник: Micro Commercial Co
Description: DIODE ARRAY GP 300V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.28 грн
Мінімальне замовлення: 3000
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P4KE10A-TP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE10A-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 8.55VWM 14.5VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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R3000FGP-TP R3000FGP(DO-41).pdf
R3000FGP-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 3KV 200MA DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 5 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3000 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+22.68 грн
Мінімальне замовлення: 5000
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R3000GP-TP R3000GP-R6000GP(DO-15).pdf
R3000GP-TP
Виробник: Micro Commercial Co
Description: 200MAHIGH VOLTAGEDO-15
товару немає в наявності
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R5000GP-TP R3000GP-R6000GP(DO-15).pdf
R5000GP-TP
Виробник: Micro Commercial Co
Description: 0.2AHIGH VOLTAGE SILICON RECTIFI
товару немає в наявності
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RB717F-TP RB717F(SOT-323).pdf
RB717F-TP
Виробник: Micro Commercial Co
Description: DIODE ARR SCHOTT 40V 30MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.65 грн
Мінімальне замовлення: 3000
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SD15C-TP SD15C~SD24C(SOD-323).pdf
SD15C-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 15VWM 40VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Obsolete
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SI2101-TP SI2101(SOT-323).pdf
SI2101-TP
Виробник: Micro Commercial Co
Description: MOSFET P-CH 20V 1.4A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 8 V
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SI2102-TP SI2102(SOT-323).pdf
SI2102-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 20V 2.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tj)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.85 грн
6000+5.98 грн
9000+5.66 грн
Мінімальне замовлення: 3000
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SMBJ250A-TP SMBJ5.0-SMBJ440CA(DO-214AA).pdf
SMBJ250A-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 250VWM 405VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 279V
Voltage - Clamping (Max) @ Ipp: 405V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJP6KE170A-TP SMBJP6KE6.8%28C%29A-SMBJP6KE550%28C%29A%28DO-214AA%29.pdf
SMBJP6KE170A-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 145VWM 234VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 600W
Power Line Protection: No
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MCU20N15-TP MCU20N15(DPAK).pdf
MCU20N15-TP
Виробник: Micro Commercial Co
Description: N-CHANNEL MOSFET, DPAK PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 68W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
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MCS2305B-TP MCS2305B.pdf
MCS2305B-TP
Виробник: Micro Commercial Co
Description: MOSFET P-CH 20V 8.2A 8TSSOP
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MCU20N15-TP MCU20N15(DPAK).pdf
MCU20N15-TP
Виробник: Micro Commercial Co
Description: N-CHANNEL MOSFET, DPAK PACKAGE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 68W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
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MCS2305B-TP MCS2305B.pdf
MCS2305B-TP
Виробник: Micro Commercial Co
Description: MOSFET P-CH 20V 8.2A 8TSSOP
на замовлення 4457 шт:
термін постачання 21-31 дні (днів)
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LMB210S-TP LMB24S-LMB210S(LMBS-1).pdf
LMB210S-TP
Виробник: Micro Commercial Co
Description: BRIDGE RECT 100V 2A LMBS-1
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Schottky
Supplier Device Package: LMBS-1
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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LMB26S-TP
Виробник: Micro Commercial Co
Description: BRIDGE RECT 60V 2A LMBS-1
товару немає в наявності
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LMB210S-TP LMB24S-LMB210S(LMBS-1).pdf
LMB210S-TP
Виробник: Micro Commercial Co
Description: BRIDGE RECT 100V 2A LMBS-1
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Schottky
Supplier Device Package: LMBS-1
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 3310 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.96 грн
10+39.44 грн
100+27.44 грн
500+20.10 грн
1000+16.34 грн
2000+14.61 грн
Мінімальне замовлення: 7
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LMB26S-TP
Виробник: Micro Commercial Co
Description: BRIDGE RECT 60V 2A LMBS-1
на замовлення 3615 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+55.03 грн
10+45.42 грн
100+33.89 грн
500+24.99 грн
1000+19.31 грн
2000+17.60 грн
Мінімальне замовлення: 6
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MSJW20N65-BP MSJW20N65(TO-247).pdf
MSJW20N65-BP
Виробник: Micro Commercial Co
Description: MOSFET N-CH TO247
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MCAC80N045Y-TP MCAC80N045Y(DFN5060).pdf
MCAC80N045Y-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 45 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2554 pF @ 20 V
товару немає в наявності
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MCU12P06-TP MCU12P06(DPAK).pdf
MCU12P06-TP
Виробник: Micro Commercial Co
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
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MCAC80N045Y-TP MCAC80N045Y(DFN5060).pdf
MCAC80N045Y-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 45 80A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2554 pF @ 20 V
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MCU12P06-TP MCU12P06(DPAK).pdf
MCU12P06-TP
Виробник: Micro Commercial Co
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
товару немає в наявності
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P4KE30A-TP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE30A-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 25.6VWM 41.4VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.9A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
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DL5232B-TP DL5221-DL5267.pdf
DL5232B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 5.6V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+4.77 грн
5000+3.99 грн
12500+3.40 грн
25000+3.00 грн
62500+2.81 грн
Мінімальне замовлення: 2500
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P4KE39A-TP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE39A-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+6.68 грн
Мінімальне замовлення: 5000
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BC558C-AP BC556x,BC557x,BC558x.pdf
BC558C-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 30V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPS751-BP MPS751(TO-92)-V1.pdf
MPS751-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 60V 2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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M8050-C-AP M8050(TO-92)-V1.pdf
M8050-C-AP
Виробник: Micro Commercial Co
Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2SA684-AP 2SA684%28TO-92L%29-V1.pdf
Виробник: Micro Commercial Co
Description: TRANS PNP 50V 1A TO92L
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92L
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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BC548C-BP BC546-BC548(TO-92)-V1.pdf
BC548C-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2SA684-BP 2SA684%28TO-92L%29-V1.pdf
Виробник: Micro Commercial Co
Description: TRANS PNP 50V 1A TO92L
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92L
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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BC548B-AP BC546-BC548(TO-92)-V1.pdf
BC548B-AP
Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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KSD471A-Y-BP KSD471A-x(TO-92).pdf
KSD471A-Y-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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BC548A-BP BC546-BC548(TO-92)-V1.pdf
BC548A-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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BC548A-AP BC546-BC548(TO-92)-V1.pdf
BC548A-AP
Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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BC558C-BP BC556x,BC557x,BC558x.pdf
BC558C-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MC79L05BP-BP MC79L05BP(TO-92)-V1.pdf
MC79L05BP-BP
Виробник: Micro Commercial Co
Description: IC REG LINEAR -5V 100MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -30°C ~ 75°C (TJ)
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -30V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): -5V
Part Status: Obsolete
PSRR: 71dB (120Hz)
Protection Features: Over Temperature, Short Circuit
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MPS751-AP MPS751(TO-92)-V1.pdf
MPS751-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 60V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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MPSA93-BP MPSA93(TO-92)-V1.pdf
MPSA93-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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MC78L06BP-BP MC78L06BP%28TO-92%29-V1.pdf
MC78L06BP-BP
Виробник: Micro Commercial Co
Description: IC REG LINEAR 6V 100MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -20°C ~ 120°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 6V
Part Status: Obsolete
PSRR: 46dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
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KSD471A-G-BP KSD471A-x(TO-92).pdf
KSD471A-G-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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M8050-D-BP M8050(TO-92)-V1.pdf
M8050-D-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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KSD471A-O-BP KSD471A-x(TO-92).pdf
KSD471A-O-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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M8050-C-BP M8050(TO-92)-V1.pdf
M8050-C-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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MPS651-BP MPS651%28TO-92%29-V1.pdf
MPS651-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 60V 2A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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SS8050-C-AP SS8050(TO-92).pdf
SS8050-C-AP
Виробник: Micro Commercial Co
Description: TRANS NPN 25V 1.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
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BC369-AP BC369(TO-92)-V1.pdf
BC369-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 20V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
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BC548B-BP BC546-BC548(TO-92)-V1.pdf
BC548B-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPS651-AP MPS651%28TO-92%29-V1.pdf
MPS651-AP
Виробник: Micro Commercial Co
Description: TRANS NPN 60V 2A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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BC369-BP BC369(TO-92)-V1.pdf
BC369-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 20V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
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BF423-BP BF421,BF423(TO-92)-V1.pdf
BF423-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 250V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 830 mW
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2N4124-BP 2N4123_2N4124.pdf
2N4124-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 25V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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M8050-D-AP M8050(TO-92)-V1.pdf
M8050-D-AP
Виробник: Micro Commercial Co
Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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MPSA43-BP MPSA42,MPSA43(TO-92)-V1.pdf
MPSA43-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 200V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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BF423-AP BF421,BF423(TO-92)-V1.pdf
BF423-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 250V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 830 mW
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HER307G-AP HER301G~HER308G(DO-201AD).pdf
HER307G-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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BZT52B27JS-TP BZT52B3V0JS-BZT52B75JS(200mW)(SOD-323).pdf
BZT52B27JS-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 27V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
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