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2SC4116-O-TP 2SC4116-O-TP Micro Commercial Co 2SC4116-x.pdf Description: TRANS NPN 60V 0.15A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 100 mW
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2SC4215-O-TP 2SC4215-O-TP Micro Commercial Co 2SC4215-x.pdf Description: TRANS NPN 30V 0.02A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 550MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
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2SC4215-R-TP 2SC4215-R-TP Micro Commercial Co 2SC4215-x.pdf Description: TRANS NPN 30V 0.02A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Frequency - Transition: 550MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
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2SC4617-Q-TP 2SC4617-Q-TP Micro Commercial Co 2SC4617-x.pdf Description: TRANS NPN 50V 0.15A SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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2SC4617-S-TP 2SC4617-S-TP Micro Commercial Co 2SC4617-x.pdf Description: TRANS NPN 50V 0.15A SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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2SD1005-U-TP 2SD1005-U-TP Micro Commercial Co 2SD1005-x.pdf Description: TRANS NPN 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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2SD1005-V-TP 2SD1005-V-TP Micro Commercial Co 2SD1005-x.pdf Description: TRANS NPN 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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2SD1005-W-TP 2SD1005-W-TP Micro Commercial Co 2SD1005-x.pdf Description: TRANS NPN 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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BAS40LP-TP BAS40LP-TP Micro Commercial Co BAS40LP.pdf Description: DIODE SCHOTTKY 40V 120MA SOD882
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-882
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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BCP53-10-TP BCP53-10-TP Micro Commercial Co BCP51-BCP53.pdf Description: TRANS PNP 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
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BCX70G-TP BCX70G-TP Micro Commercial Co BCX70G-BCX70K.pdf Description: TRANS NPN 45V 0.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BCX70H-TP BCX70H-TP Micro Commercial Co BCX70G-BCX70K.pdf Description: TRANS NPN 45V 0.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BZT52B18S-TP Micro Commercial Co Description: DIODE ZENER 200MW SOT-323
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BZT52B2V4S-TP Micro Commercial Co Description: DIODE ZENER 2.4V 200MW SOD323
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BZT52B30S-TP Micro Commercial Co Description: DIODE ZENER 200MW SOT-323
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BZT52B62S-TP Micro Commercial Co Description: DIODE ZENER 200MW SOT-323
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BZT52C11LP-TP Micro Commercial Co BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 11V 100MW SOD882
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BZT52C13LP-TP Micro Commercial Co BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 13V 100MW SOD882
Tolerance: ±6.54%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZT52C3V0LP-TP BZT52C3V0LP-TP Micro Commercial Co DS_353_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 3V 100MW SOD882
Tolerance: ±6.67%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZT52C3V9LP-TP BZT52C3V9LP-TP Micro Commercial Co DS_353_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 3.9V 100MW SOD882
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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BZT52C4V3LP-TP BZT52C4V3LP-TP Micro Commercial Co DS_353_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 4.3V 100MW SOD882
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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FZT692B-TP FZT692B-TP Micro Commercial Co Description: TRANS NPN 70V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
Frequency - Transition: 10MHz
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 800 mW
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MBR10100AULPS-TP Micro Commercial Co Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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MBR15120AULPS-TP Micro Commercial Co Description: DIODE SCHOTTKY TO-277A
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MBR20100PS-TP MBR20100PS-TP Micro Commercial Co Description: DIODE SCHOTTKY 100V 20A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-277A
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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MBRX120LSF-TP MBRX120LSF-TP Micro Commercial Co Description: DIODE SCHOTTKY 20V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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TBSL40A-TP Micro Commercial Co Description: DIODE
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TBSL40B-TP Micro Commercial Co Description: DIODE
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TBSL40D-TP Micro Commercial Co Description: DIODE
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TBSL40G-TP Micro Commercial Co Description: DIODE
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TBSL40J-TP Micro Commercial Co Description: DIODE
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TBSL40K-TP Micro Commercial Co Description: DIODE
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TBSL40M-TP Micro Commercial Co Description: DIODE
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2SB1151-G-BP 2SB1151-G-BP Micro Commercial Co 2SB1151-x.pdf Description: TRANS PNP 60V 5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 1V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
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2SB1151-O-BP 2SB1151-O-BP Micro Commercial Co 2SB1151-x.pdf Description: TRANS PNP 60V 5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
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2SB1151-Y-BP 2SB1151-Y-BP Micro Commercial Co 2SB1151-x.pdf Description: TRANS PNP 60V 5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
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2SB1366F-O-BP 2SB1366F-O-BP Micro Commercial Co 2SB1366F-O%2C2SB1366F-Y.pdf Description: TRANS PNP 60V 3A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: TO-220F
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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2SB1366F-Y-BP 2SB1366F-Y-BP Micro Commercial Co 2SB1366F-O%2C2SB1366F-Y.pdf Description: TRANS PNP 60V 3A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: TO-220F
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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2SD2012-BP 2SD2012-BP Micro Commercial Co DS_353_2SD2012.pdf Description: TRANS NPN 60V 3A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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BD433-BP BD433-BP Micro Commercial Co BD433,BD435, BD437.pdf Description: TRANS NPN 22V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 22 V
Power - Max: 1.25 W
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BD434-BP BD434-BP Micro Commercial Co BD434,BD436,BD438.pdf Description: TRANS PNP 22V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 22 V
Power - Max: 1.25 W
товару немає в наявності
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BD435-BP BD435-BP Micro Commercial Co BD433,BD435,%20BD437.pdf Description: TRANS NPN 32V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1.25 W
товару немає в наявності
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BD436-BP BD436-BP Micro Commercial Co BD434%2CBD436%2CBD438.pdf Description: TRANS PNP 32V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1.25 W
товару немає в наявності
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D1815-R-BP Micro Commercial Co Description: TRANS NPN 100V 3A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TO-251
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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G2SB60-BP G2SB60-BP Micro Commercial Co Description: DIODE GPP 2A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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GBJL1506-BP Micro Commercial Co GBJL15005-GBJL1510.pdf Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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GBJL1508-BP Micro Commercial Co GBJL15005-GBJL1510.pdf Description: DIODE BRIDGE GBJL
товару немає в наявності
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GBJL606-BP Micro Commercial Co Description: BRIDGE RECT 1PHASE 600V 6A GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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GBL406-BP GBL406-BP Micro Commercial Co GBL4005-GBL410%28GBL%29-C.pdf Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KSD1408-Y-BP KSD1408-Y-BP Micro Commercial Co Description: TRANS NPN 80V 4A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Frequency - Transition: 8MHz
Supplier Device Package: TO-220F
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
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MGR1203-BP MGR1203-BP Micro Commercial Co Description: DIODE GEN PURP 200V 12A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MGR1604-BP MGR1604-BP Micro Commercial Co Description: DIODE STANDARD 400V 16A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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MGR1606-BP MGR1606-BP Micro Commercial Co Description: DIODE GEN PURP 800V 16A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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MGR1607-BP MGR1607-BP Micro Commercial Co Description: DIODE GPP TO-220AC
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MJE2955-BP MJE2955-BP Micro Commercial Co Description: TRANS PNP 60V 10A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 400mA, 4A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
товару немає в наявності
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DTA143ZCA-TP DTA143ZCA-TP Micro Commercial Co DTA143ZCA(SOT-23).pdf Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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MMBZ5246B-TP MMBZ5246B-TP Micro Commercial Co MMBZ5221B-MMBZ5259B(SOT-23).pdf Description: DIODE ZENER 16V 350MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
товару немає в наявності
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2N7002KDWA-TP 2N7002KDWA-TP Micro Commercial Co 2N7002KDWA.pdf Description: MOSFET 2N-CH 60V 0.34A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Obsolete
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BAS70WT-04-TP BAS70WT-04-TP Micro Commercial Co BAS70WT%20Series(SOT-323).pdf Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 4270 шт:
термін постачання 21-31 дні (днів)
24+13.50 грн
38+8.26 грн
100+5.11 грн
500+3.49 грн
1000+3.07 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BAS70WX-TP BAS70WX-TP Micro Commercial Co BAS70WX(SOD-323).pdf Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 16411 шт:
термін постачання 21-31 дні (днів)
15+22.23 грн
24+12.84 грн
100+8.00 грн
500+5.53 грн
1000+4.89 грн
Мінімальне замовлення: 15
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2SC4116-O-TP 2SC4116-x.pdf
2SC4116-O-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 60V 0.15A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 100 mW
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2SC4215-O-TP 2SC4215-x.pdf
2SC4215-O-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.02A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 550MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
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2SC4215-R-TP 2SC4215-x.pdf
2SC4215-R-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.02A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Frequency - Transition: 550MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
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2SC4617-Q-TP 2SC4617-x.pdf
2SC4617-Q-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 50V 0.15A SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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2SC4617-S-TP 2SC4617-x.pdf
2SC4617-S-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 50V 0.15A SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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2SD1005-U-TP 2SD1005-x.pdf
2SD1005-U-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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2SD1005-V-TP 2SD1005-x.pdf
2SD1005-V-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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2SD1005-W-TP 2SD1005-x.pdf
2SD1005-W-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 80V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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BAS40LP-TP BAS40LP.pdf
BAS40LP-TP
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 120MA SOD882
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-882
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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BCP53-10-TP BCP51-BCP53.pdf
BCP53-10-TP
Виробник: Micro Commercial Co
Description: TRANS PNP 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
товару немає в наявності
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BCX70G-TP BCX70G-BCX70K.pdf
BCX70G-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 45V 0.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BCX70H-TP BCX70G-BCX70K.pdf
BCX70H-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 45V 0.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BZT52B18S-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 200MW SOT-323
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BZT52B2V4S-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 2.4V 200MW SOD323
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BZT52B30S-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 200MW SOT-323
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BZT52B62S-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 200MW SOT-323
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BZT52C11LP-TP BZT52C2V4LP-BZT52C39LP.pdf
Виробник: Micro Commercial Co
Description: DIODE ZENER 11V 100MW SOD882
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BZT52C13LP-TP BZT52C2V4LP-BZT52C39LP.pdf
Виробник: Micro Commercial Co
Description: DIODE ZENER 13V 100MW SOD882
Tolerance: ±6.54%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZT52C3V0LP-TP DS_353_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C3V0LP-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 3V 100MW SOD882
Tolerance: ±6.67%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZT52C3V9LP-TP DS_353_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C3V9LP-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 3.9V 100MW SOD882
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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BZT52C4V3LP-TP DS_353_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C4V3LP-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 4.3V 100MW SOD882
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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FZT692B-TP
FZT692B-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 70V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
Frequency - Transition: 10MHz
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 800 mW
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MBR10100AULPS-TP
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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MBR15120AULPS-TP
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY TO-277A
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MBR20100PS-TP
MBR20100PS-TP
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 20A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-277A
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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MBRX120LSF-TP
MBRX120LSF-TP
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 20V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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TBSL40A-TP
Виробник: Micro Commercial Co
Description: DIODE
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TBSL40B-TP
Виробник: Micro Commercial Co
Description: DIODE
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TBSL40D-TP
Виробник: Micro Commercial Co
Description: DIODE
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TBSL40G-TP
Виробник: Micro Commercial Co
Description: DIODE
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TBSL40J-TP
Виробник: Micro Commercial Co
Description: DIODE
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TBSL40K-TP
Виробник: Micro Commercial Co
Description: DIODE
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TBSL40M-TP
Виробник: Micro Commercial Co
Description: DIODE
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2SB1151-G-BP 2SB1151-x.pdf
2SB1151-G-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 60V 5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 1V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
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2SB1151-O-BP 2SB1151-x.pdf
2SB1151-O-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 60V 5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
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2SB1151-Y-BP 2SB1151-x.pdf
2SB1151-Y-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 60V 5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
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2SB1366F-O-BP 2SB1366F-O%2C2SB1366F-Y.pdf
2SB1366F-O-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 60V 3A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: TO-220F
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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2SB1366F-Y-BP 2SB1366F-O%2C2SB1366F-Y.pdf
2SB1366F-Y-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 60V 3A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: TO-220F
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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2SD2012-BP DS_353_2SD2012.pdf
2SD2012-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 60V 3A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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BD433-BP BD433,BD435, BD437.pdf
BD433-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 22V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 22 V
Power - Max: 1.25 W
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BD434-BP BD434,BD436,BD438.pdf
BD434-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 22V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 22 V
Power - Max: 1.25 W
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BD435-BP BD433,BD435,%20BD437.pdf
BD435-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 32V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1.25 W
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BD436-BP BD434%2CBD436%2CBD438.pdf
BD436-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 32V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1.25 W
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D1815-R-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 100V 3A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TO-251
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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G2SB60-BP
G2SB60-BP
Виробник: Micro Commercial Co
Description: DIODE GPP 2A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBJL1506-BP GBJL15005-GBJL1510.pdf
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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GBJL1508-BP GBJL15005-GBJL1510.pdf
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBJL
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GBJL606-BP
Виробник: Micro Commercial Co
Description: BRIDGE RECT 1PHASE 600V 6A GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBL406-BP GBL4005-GBL410%28GBL%29-C.pdf
GBL406-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KSD1408-Y-BP
KSD1408-Y-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 80V 4A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Frequency - Transition: 8MHz
Supplier Device Package: TO-220F
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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MGR1203-BP
MGR1203-BP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 12A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MGR1604-BP
MGR1604-BP
Виробник: Micro Commercial Co
Description: DIODE STANDARD 400V 16A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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MGR1606-BP
MGR1606-BP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 800V 16A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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MGR1607-BP
MGR1607-BP
Виробник: Micro Commercial Co
Description: DIODE GPP TO-220AC
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MJE2955-BP
MJE2955-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 60V 10A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 400mA, 4A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
товару немає в наявності
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DTA143ZCA-TP DTA143ZCA(SOT-23).pdf
DTA143ZCA-TP
Виробник: Micro Commercial Co
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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MMBZ5246B-TP MMBZ5221B-MMBZ5259B(SOT-23).pdf
MMBZ5246B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 16V 350MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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2N7002KDWA-TP 2N7002KDWA.pdf
2N7002KDWA-TP
Виробник: Micro Commercial Co
Description: MOSFET 2N-CH 60V 0.34A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Obsolete
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BAS70WT-04-TP BAS70WT%20Series(SOT-323).pdf
BAS70WT-04-TP
Виробник: Micro Commercial Co
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 4270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.50 грн
38+8.26 грн
100+5.11 грн
500+3.49 грн
1000+3.07 грн
Мінімальне замовлення: 24
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BAS70WX-TP BAS70WX(SOD-323).pdf
BAS70WX-TP
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 16411 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+22.23 грн
24+12.84 грн
100+8.00 грн
500+5.53 грн
1000+4.89 грн
Мінімальне замовлення: 15
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