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MT46V16M16BG-6 IT:F TR MT46V16M16BG-6 IT:F TR Micron Technology Inc. DS_557_MT46V64M4, 32M8, 16M16.pdf Description: IC DRAM 256MBIT PAR 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-FBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT47H128M8HQ-3:E TR MT47H128M8HQ-3:E TR Micron Technology Inc. MT47H256M4,128M8,64M16.pdf Description: IC DRAM 1G PARALLEL 60FBGA
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MT47H256M4HQ-3:E TR MT47H256M4HQ-3:E TR Micron Technology Inc. MT47H256M4,128M8,64M16.pdf Description: IC DRAM 1GBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-FBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 256M x 4
DigiKey Programmable: Not Verified
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MT47H64M16HR-3:E TR MT47H64M16HR-3:E TR Micron Technology Inc. MT47H256M4%2C128M8%2C64M16.pdf Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT4VDDT3264AY-40BF1 MT4VDDT3264AY-40BF1 Micron Technology Inc. DD4C16_32x64a.pdf Description: MODULE DDR SDRAM 256MB 184UDIMM
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MT36VDDF25672Y-335F3 MT36VDDF25672Y-335F3 Micron Technology Inc. MT36VDDF12872,%2025672.pdf Description: MODULE DDR SDRAM 2GB 184RDIMM
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MT4VDDT1664HY-335F3 MT4VDDT1664HY-335F3 Micron Technology Inc. Description: MODULE DDR SDRAM 128MB 200SODIMM
Packaging: Tray
Package / Case: 200-SODIMM
Memory Size: 128MB
Memory Type: DDR SDRAM
Part Status: Discontinued at Digi-Key
Transfer Rate (Mb/s, MT/s, MHz): 200
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MT16HTF25664HY-667E1 MT16HTF25664HY-667E1 Micron Technology Inc. MT16HTFzzz64H-xGB.pdf Description: MODULE DDR2 SDRAM 2GB 200SODIMM
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MT16HTF25664AY-667E1 MT16HTF25664AY-667E1 Micron Technology Inc. MT16HTFxxx64AY.pdf Description: MODULE DDR2 SDRAM 2GB 240UDIMM
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MT18HTF25672PY-667E1 MT18HTF25672PY-667E1 Micron Technology Inc. MT18HTFxx72.pdf Description: MODULE DDR2 SDRAM 2GB 240RDIMM
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MT36HTF51272PY-667E1 MT36HTF51272PY-667E1 Micron Technology Inc. MT36HTFxxx72(P).pdf Description: MODULE DDR2 SDRAM 4GB 240RDIMM
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MT4HTF6464HY-667E1 MT4HTF6464HY-667E1 Micron Technology Inc. Description: MOD DDR2 SDRAM 512MB 200SODIMM
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MT4HTF6464AY-667E1 MT4HTF6464AY-667E1 Micron Technology Inc. MT4HTFxx64AY.pdf Description: MODULE DDR2 SDRAM 512MB 240UDIMM
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MT8HTF12864HDY-667E1 MT8HTF12864HDY-667E1 Micron Technology Inc. MT8HTFxx64HDY.pdf Description: MODULE DDR2 SDRAM 1GB 200SODIMM
Packaging: Tray
Package / Case: 200-SODIMM
Memory Size: 1GB
Memory Type: DDR2 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 667
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MT45W2MW16PGA-70 WT TR MT45W2MW16PGA-70 WT TR Micron Technology Inc. 32mb_asyncpage_c1_0_p24z.pdf Description: IC PSRAM 32MBIT 70NS 48VFBGA
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MT45W2MW16PGA-70 IT TR MT45W2MW16PGA-70 IT TR Micron Technology Inc. 32mb_asyncpage_c1_0_p24z.pdf Description: IC PSRAM 32MBIT 70NS 48VFBGA
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MT45W2MW16BGB-708 WT TR MT45W2MW16BGB-708 WT TR Micron Technology Inc. 32mb_burst_c1_0_p24z.pdf Description: IC PSRAM 32MBIT 70NS 54VFBGA
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MT46H16M16LFBF-6:A TR MT46H16M16LFBF-6:A TR Micron Technology Inc. T36M_256Mb_mobile_lpddr_sdram.pdf Description: IC LPDDR SDRAM 256MBIT 60VFBGA
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MT46H16M32LFCM-6 TR MT46H16M32LFCM-6 TR Micron Technology Inc. MT46H32M%2C16M32LF.pdf Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
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MT46H16M32LFCM-6 IT TR MT46H16M32LFCM-6 IT TR Micron Technology Inc. MT46H32M%2C16M32LF.pdf Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
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MT46H32M16LFCK-6 TR MT46H32M16LFCK-6 TR Micron Technology Inc. MT46H32M,16M32LF.pdf Description: IC DRAM 512M PARALLEL 60VFBGA
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MT46H32M16LFCK-6 IT TR MT46H32M16LFCK-6 IT TR Micron Technology Inc. MT46H32M,16M32LF.pdf Description: IC DRAM 512M PARALLEL 60VFBGA
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MT48H8M16LFB4-8:J TR MT48H8M16LFB4-8:J TR Micron Technology Inc. Y25M_128Mb_mobile_lpsdr_sdram_x16.pdf Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
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MT48H16M16LFBF-75 IT:G TR MT48H16M16LFBF-75 IT:G TR Micron Technology Inc. MT48H(16,8)M(16,32)LF.pdf Description: IC DRAM 256M PARALLEL 54VFBGA
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MT48H16M16LFBF-75:G TR MT48H16M16LFBF-75:G TR Micron Technology Inc. MT48H(16,8)M(16,32)LF.pdf Description: IC DRAM 256M PARALLEL 54VFBGA
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MT48H8M32LFB5-75 IT:G TR MT48H8M32LFB5-75 IT:G TR Micron Technology Inc. Y36M_256Mb_mobile_lpsdr_sdram.pdf Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
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MT48H8M32LFB5-75:G TR MT48H8M32LFB5-75:G TR Micron Technology Inc. Y36M_256Mb_mobile_lpsdr_sdram.pdf Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
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MT48H16M32LFCM-75 IT:A TR MT48H16M32LFCM-75 IT:A TR Micron Technology Inc. MT48H%2816%2C32%29MxxL%28F%2CG%29.pdf Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
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MT48H16M32LFCM-75:A TR MT48H16M32LFCM-75:A TR Micron Technology Inc. MT48H%2816%2C32%29MxxL%28F%2CG%29.pdf Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
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MT48H32M16LFCJ-75 L IT:A TR MT48H32M16LFCJ-75 L IT:A TR Micron Technology Inc. MT48H(16,32)MxxL(F,G).pdf Description: IC SDRAM 512MBIT 133MHZ 54VFBGA
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MT48H32M16LFCJ-75:A TR MT48H32M16LFCJ-75:A TR Micron Technology Inc. MT48H(16,32)MxxL(F,G).pdf Description: IC DRAM 512MBIT PAR 54VFBGA
Packaging: Cut Tape (CT)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (10x11.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
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MT46H32M32LFCM-6 IT:A TR MT46H32M32LFCM-6 IT:A TR Micron Technology Inc. MT46H%2832%2C64%29MxxLF.pdf Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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MT46H32M32LFCM-6:A TR MT46H32M32LFCM-6:A TR Micron Technology Inc. MT46H%2832%2C64%29MxxLF.pdf Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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MT46H64M16LFCK-6 IT:A TR MT46H64M16LFCK-6 IT:A TR Micron Technology Inc. MT46H64M16LF,MT46H32M32LF.pdf Description: IC DRAM 1GBIT PARALLEL 60VFBGA
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MT46H64M16LFCK-6:A TR MT46H64M16LFCK-6:A TR Micron Technology Inc. MT46H64M16LF%2CMT46H32M32LF.pdf Description: IC DRAM 1GBIT PARALLEL 60VFBGA
Packaging: Cut Tape (CT)
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (10x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT46V8M16P-5B:D TR MT46V8M16P-5B:D TR Micron Technology Inc. MT46V8M16,16M8,32M4.pdf Description: IC DDR SDRAM 128MBIT 5NS 66TSOP
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MT46V16M16BG-6 IT:F TR MT46V16M16BG-6 IT:F TR Micron Technology Inc. DS_557_MT46V64M4, 32M8, 16M16.pdf Description: IC DRAM 256MBIT PAR 60FBGA
Packaging: Cut Tape (CT)
Package / Case: 60-FBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT47H64M16HR-3:E TR MT47H64M16HR-3:E TR Micron Technology Inc. MT47H256M4%2C128M8%2C64M16.pdf Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT45W2MW16PGA-70 WT TR MT45W2MW16PGA-70 WT TR Micron Technology Inc. 32mb_asyncpage_c1_0_p24z.pdf Description: IC PSRAM 32MBIT 70NS 48VFBGA
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MT45W2MW16PGA-70 IT TR MT45W2MW16PGA-70 IT TR Micron Technology Inc. 32mb_asyncpage_c1_0_p24z.pdf Description: IC PSRAM 32MBIT 70NS 48VFBGA
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MT45W2MW16BGB-708 WT TR MT45W2MW16BGB-708 WT TR Micron Technology Inc. 32mb_burst_c1_0_p24z.pdf Description: IC PSRAM 32MBIT 70NS 54VFBGA
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MT46H16M16LFBF-6:A TR MT46H16M16LFBF-6:A TR Micron Technology Inc. T36M_256Mb_mobile_lpddr_sdram.pdf Description: IC LPDDR SDRAM 256MBIT 60VFBGA
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MT48H8M16LFB4-8:J TR MT48H8M16LFB4-8:J TR Micron Technology Inc. Y25M_128Mb_mobile_lpsdr_sdram_x16.pdf Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
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M25P80-VMN6TP TR M25P80-VMN6TP TR Micron Technology Inc. m25p80.pdf Description: IC FLASH 8MBIT SPI 75MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 75 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Verified
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MT29F2G08AADWP:D TR MT29F2G08AADWP:D TR Micron Technology Inc. MT29F2G%2808%2C16%29AAD%2CABD.pdf Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT29F2G08AADWP-ET:D TR MT29F2G08AADWP-ET:D TR Micron Technology Inc. MT29F2G(08,16)AAD,ABD.pdf Description: IC FLASH 2GBIT 48TSOP
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MT29F2G08ABDHC:D TR MT29F2G08ABDHC:D TR Micron Technology Inc. MT29F2G%2808%2C16%29AAD%2CABD.pdf Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT29F2G08ABDHC-ET:D TR MT29F2G08ABDHC-ET:D TR Micron Technology Inc. MT29F2G%2808%2C16%29AAD%2CABD.pdf Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT29F2G16AADWP:D TR MT29F2G16AADWP:D TR Micron Technology Inc. MT29F2G%2808%2C16%29AAD%2CABD.pdf Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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MT29F2G16AADWP-ET:D TR MT29F2G16AADWP-ET:D TR Micron Technology Inc. MT29F2G(08,16)AAD,ABD.pdf Description: IC FLASH 2GBIT PARALLEL 48TSOP I
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MT29F2G16ABDHC:D TR MT29F2G16ABDHC:D TR Micron Technology Inc. MT29F2G%2808%2C16%29AAD%2CABD.pdf Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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MT29F2G16ABDHC-ET:D TR MT29F2G16ABDHC-ET:D TR Micron Technology Inc. MT29F2G%2808%2C16%29AAD%2CABD.pdf Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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MT29F4G08AACWC:C TR MT29F4G08AACWC:C TR Micron Technology Inc. Description: IC FLASH 4GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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MT29F4G08AACWC-ET:C TR MT29F4G08AACWC-ET:C TR Micron Technology Inc. Description: IC FLASH 4GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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MT29F4G08ABCHC:C TR MT29F4G08ABCHC:C TR Micron Technology Inc. Description: IC FLASH 4GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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MT29F4G08ABCHC-ET:C TR MT29F4G08ABCHC-ET:C TR Micron Technology Inc. Description: IC FLASH 4GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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MT29F4G08ABCWC-ET:C TR MT29F4G08ABCWC-ET:C TR Micron Technology Inc. Description: IC FLASH 4GBIT 48TSOP
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MT29F4G16AACWC:C TR MT29F4G16AACWC:C TR Micron Technology Inc. Description: IC FLASH 4GBIT 48TSOP
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MT29F4G16AACWC-ET:C TR MT29F4G16AACWC-ET:C TR Micron Technology Inc. Description: IC FLASH 4GBIT 48TSOP
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MT29F4G16ABCHC:C TR MT29F4G16ABCHC:C TR Micron Technology Inc. Description: IC FLASH 4GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
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MT46V16M16BG-6 IT:F TR DS_557_MT46V64M4, 32M8, 16M16.pdf
MT46V16M16BG-6 IT:F TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256MBIT PAR 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-FBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT47H128M8HQ-3:E TR MT47H256M4,128M8,64M16.pdf
MT47H128M8HQ-3:E TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1G PARALLEL 60FBGA
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MT47H256M4HQ-3:E TR MT47H256M4,128M8,64M16.pdf
MT47H256M4HQ-3:E TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-FBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 256M x 4
DigiKey Programmable: Not Verified
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MT47H64M16HR-3:E TR MT47H256M4%2C128M8%2C64M16.pdf
MT47H64M16HR-3:E TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT4VDDT3264AY-40BF1 DD4C16_32x64a.pdf
MT4VDDT3264AY-40BF1
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 256MB 184UDIMM
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MT36VDDF25672Y-335F3 MT36VDDF12872,%2025672.pdf
MT36VDDF25672Y-335F3
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 2GB 184RDIMM
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MT4VDDT1664HY-335F3
MT4VDDT1664HY-335F3
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 128MB 200SODIMM
Packaging: Tray
Package / Case: 200-SODIMM
Memory Size: 128MB
Memory Type: DDR SDRAM
Part Status: Discontinued at Digi-Key
Transfer Rate (Mb/s, MT/s, MHz): 200
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MT16HTF25664HY-667E1 MT16HTFzzz64H-xGB.pdf
MT16HTF25664HY-667E1
Виробник: Micron Technology Inc.
Description: MODULE DDR2 SDRAM 2GB 200SODIMM
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MT16HTF25664AY-667E1 MT16HTFxxx64AY.pdf
MT16HTF25664AY-667E1
Виробник: Micron Technology Inc.
Description: MODULE DDR2 SDRAM 2GB 240UDIMM
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MT18HTF25672PY-667E1 MT18HTFxx72.pdf
MT18HTF25672PY-667E1
Виробник: Micron Technology Inc.
Description: MODULE DDR2 SDRAM 2GB 240RDIMM
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MT36HTF51272PY-667E1 MT36HTFxxx72(P).pdf
MT36HTF51272PY-667E1
Виробник: Micron Technology Inc.
Description: MODULE DDR2 SDRAM 4GB 240RDIMM
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MT4HTF6464HY-667E1
MT4HTF6464HY-667E1
Виробник: Micron Technology Inc.
Description: MOD DDR2 SDRAM 512MB 200SODIMM
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MT4HTF6464AY-667E1 MT4HTFxx64AY.pdf
MT4HTF6464AY-667E1
Виробник: Micron Technology Inc.
Description: MODULE DDR2 SDRAM 512MB 240UDIMM
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MT8HTF12864HDY-667E1 MT8HTFxx64HDY.pdf
MT8HTF12864HDY-667E1
Виробник: Micron Technology Inc.
Description: MODULE DDR2 SDRAM 1GB 200SODIMM
Packaging: Tray
Package / Case: 200-SODIMM
Memory Size: 1GB
Memory Type: DDR2 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 667
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MT45W2MW16PGA-70 WT TR 32mb_asyncpage_c1_0_p24z.pdf
MT45W2MW16PGA-70 WT TR
Виробник: Micron Technology Inc.
Description: IC PSRAM 32MBIT 70NS 48VFBGA
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MT45W2MW16PGA-70 IT TR 32mb_asyncpage_c1_0_p24z.pdf
MT45W2MW16PGA-70 IT TR
Виробник: Micron Technology Inc.
Description: IC PSRAM 32MBIT 70NS 48VFBGA
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MT45W2MW16BGB-708 WT TR 32mb_burst_c1_0_p24z.pdf
MT45W2MW16BGB-708 WT TR
Виробник: Micron Technology Inc.
Description: IC PSRAM 32MBIT 70NS 54VFBGA
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MT46H16M16LFBF-6:A TR T36M_256Mb_mobile_lpddr_sdram.pdf
MT46H16M16LFBF-6:A TR
Виробник: Micron Technology Inc.
Description: IC LPDDR SDRAM 256MBIT 60VFBGA
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MT46H16M32LFCM-6 TR MT46H32M%2C16M32LF.pdf
MT46H16M32LFCM-6 TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
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MT46H16M32LFCM-6 IT TR MT46H32M%2C16M32LF.pdf
MT46H16M32LFCM-6 IT TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
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MT46H32M16LFCK-6 TR MT46H32M,16M32LF.pdf
MT46H32M16LFCK-6 TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512M PARALLEL 60VFBGA
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MT46H32M16LFCK-6 IT TR MT46H32M,16M32LF.pdf
MT46H32M16LFCK-6 IT TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512M PARALLEL 60VFBGA
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MT48H8M16LFB4-8:J TR Y25M_128Mb_mobile_lpsdr_sdram_x16.pdf
MT48H8M16LFB4-8:J TR
Виробник: Micron Technology Inc.
Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
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MT48H16M16LFBF-75 IT:G TR MT48H(16,8)M(16,32)LF.pdf
MT48H16M16LFBF-75 IT:G TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256M PARALLEL 54VFBGA
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MT48H16M16LFBF-75:G TR MT48H(16,8)M(16,32)LF.pdf
MT48H16M16LFBF-75:G TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256M PARALLEL 54VFBGA
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MT48H8M32LFB5-75 IT:G TR Y36M_256Mb_mobile_lpsdr_sdram.pdf
MT48H8M32LFB5-75 IT:G TR
Виробник: Micron Technology Inc.
Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
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MT48H8M32LFB5-75:G TR Y36M_256Mb_mobile_lpsdr_sdram.pdf
MT48H8M32LFB5-75:G TR
Виробник: Micron Technology Inc.
Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
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MT48H16M32LFCM-75 IT:A TR MT48H%2816%2C32%29MxxL%28F%2CG%29.pdf
MT48H16M32LFCM-75 IT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
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MT48H16M32LFCM-75:A TR MT48H%2816%2C32%29MxxL%28F%2CG%29.pdf
MT48H16M32LFCM-75:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
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MT48H32M16LFCJ-75 L IT:A TR MT48H(16,32)MxxL(F,G).pdf
MT48H32M16LFCJ-75 L IT:A TR
Виробник: Micron Technology Inc.
Description: IC SDRAM 512MBIT 133MHZ 54VFBGA
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MT48H32M16LFCJ-75:A TR MT48H(16,32)MxxL(F,G).pdf
MT48H32M16LFCJ-75:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 54VFBGA
Packaging: Cut Tape (CT)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (10x11.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
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MT46H32M32LFCM-6 IT:A TR MT46H%2832%2C64%29MxxLF.pdf
MT46H32M32LFCM-6 IT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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MT46H32M32LFCM-6:A TR MT46H%2832%2C64%29MxxLF.pdf
MT46H32M32LFCM-6:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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MT46H64M16LFCK-6 IT:A TR MT46H64M16LF,MT46H32M32LF.pdf
MT46H64M16LFCK-6 IT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 60VFBGA
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MT46H64M16LFCK-6:A TR MT46H64M16LF%2CMT46H32M32LF.pdf
MT46H64M16LFCK-6:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 60VFBGA
Packaging: Cut Tape (CT)
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (10x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT46V8M16P-5B:D TR MT46V8M16,16M8,32M4.pdf
MT46V8M16P-5B:D TR
Виробник: Micron Technology Inc.
Description: IC DDR SDRAM 128MBIT 5NS 66TSOP
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MT46V16M16BG-6 IT:F TR DS_557_MT46V64M4, 32M8, 16M16.pdf
MT46V16M16BG-6 IT:F TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256MBIT PAR 60FBGA
Packaging: Cut Tape (CT)
Package / Case: 60-FBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT47H64M16HR-3:E TR MT47H256M4%2C128M8%2C64M16.pdf
MT47H64M16HR-3:E TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT45W2MW16PGA-70 WT TR 32mb_asyncpage_c1_0_p24z.pdf
MT45W2MW16PGA-70 WT TR
Виробник: Micron Technology Inc.
Description: IC PSRAM 32MBIT 70NS 48VFBGA
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MT45W2MW16PGA-70 IT TR 32mb_asyncpage_c1_0_p24z.pdf
MT45W2MW16PGA-70 IT TR
Виробник: Micron Technology Inc.
Description: IC PSRAM 32MBIT 70NS 48VFBGA
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MT45W2MW16BGB-708 WT TR 32mb_burst_c1_0_p24z.pdf
MT45W2MW16BGB-708 WT TR
Виробник: Micron Technology Inc.
Description: IC PSRAM 32MBIT 70NS 54VFBGA
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MT46H16M16LFBF-6:A TR T36M_256Mb_mobile_lpddr_sdram.pdf
MT46H16M16LFBF-6:A TR
Виробник: Micron Technology Inc.
Description: IC LPDDR SDRAM 256MBIT 60VFBGA
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MT48H8M16LFB4-8:J TR Y25M_128Mb_mobile_lpsdr_sdram_x16.pdf
MT48H8M16LFB4-8:J TR
Виробник: Micron Technology Inc.
Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
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M25P80-VMN6TP TR m25p80.pdf
M25P80-VMN6TP TR
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT SPI 75MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 75 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Verified
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MT29F2G08AADWP:D TR MT29F2G%2808%2C16%29AAD%2CABD.pdf
MT29F2G08AADWP:D TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT29F2G08AADWP-ET:D TR MT29F2G(08,16)AAD,ABD.pdf
MT29F2G08AADWP-ET:D TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT 48TSOP
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MT29F2G08ABDHC:D TR MT29F2G%2808%2C16%29AAD%2CABD.pdf
MT29F2G08ABDHC:D TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT29F2G08ABDHC-ET:D TR MT29F2G%2808%2C16%29AAD%2CABD.pdf
MT29F2G08ABDHC-ET:D TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT29F2G16AADWP:D TR MT29F2G%2808%2C16%29AAD%2CABD.pdf
MT29F2G16AADWP:D TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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MT29F2G16AADWP-ET:D TR MT29F2G(08,16)AAD,ABD.pdf
MT29F2G16AADWP-ET:D TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
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MT29F2G16ABDHC:D TR MT29F2G%2808%2C16%29AAD%2CABD.pdf
MT29F2G16ABDHC:D TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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MT29F2G16ABDHC-ET:D TR MT29F2G%2808%2C16%29AAD%2CABD.pdf
MT29F2G16ABDHC-ET:D TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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MT29F4G08AACWC:C TR
MT29F4G08AACWC:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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MT29F4G08AACWC-ET:C TR
MT29F4G08AACWC-ET:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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MT29F4G08ABCHC:C TR
MT29F4G08ABCHC:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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MT29F4G08ABCHC-ET:C TR
MT29F4G08ABCHC-ET:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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MT29F4G08ABCWC-ET:C TR
MT29F4G08ABCWC-ET:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT 48TSOP
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MT29F4G16AACWC:C TR
MT29F4G16AACWC:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT 48TSOP
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MT29F4G16AACWC-ET:C TR
MT29F4G16AACWC-ET:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT 48TSOP
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MT29F4G16ABCHC:C TR
MT29F4G16ABCHC:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (10.5x13)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
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