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MT46V32M16P-5B IT:F TR MT46V32M16P-5B IT:F TR Micron Technology Inc. 512Mb_DDR.pdf Description: IC DDR SDRAM 512MBIT 5NS 66TSOP
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MT47H128M8CF-25:H TR MT47H128M8CF-25:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 60FBGA
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MT47H128M8CF-25E IT:H TR MT47H128M8CF-25E IT:H TR Micron Technology Inc. 1Gb_DDR2.pdf Description: IC DDR2 SDRAM 1GBIT 2.5NS 60FBGA
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MT47H128M8CF-25E:H TR MT47H128M8CF-25E:H TR Micron Technology Inc. 1Gb_DDR2.pdf Description: IC DDR2 SDRAM 1GBIT 2.5NS 60FBGA
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MT47H128M8CF-3 IT:H TR MT47H128M8CF-3 IT:H TR Micron Technology Inc. 1Gb_DDR2.pdf Description: IC DDR2 SDRAM 1GBIT 3NS 60FBGA
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MT47H128M8CF-3:H TR MT47H128M8CF-3:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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MT47H32M16HR-25E IT:G TR MT47H32M16HR-25E IT:G TR Micron Technology Inc. 512MbDDR2.pdf Description: IC DDR2 SDRAM 512MBIT 84BGA
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MT47H64M16HR-25:H TR MT47H64M16HR-25:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
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MT47H64M16HR-25E IT:H TR MT47H64M16HR-25E IT:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
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MT47H64M16HR-25E:H TR MT47H64M16HR-25E:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
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MT47H64M16HR-3 AAT:H TR MT47H64M16HR-3 AAT:H TR Micron Technology Inc. MT47H256M4%2C128M8%2C64M16.pdf Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT47H64M16HR-3 IT:H TR MT47H64M16HR-3 IT:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
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MT47H64M16HR-3:H TR MT47H64M16HR-3:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT47H64M8CF-25E IT:G TR MT47H64M8CF-25E IT:G TR Micron Technology Inc. MT47H128M4,64M8,32M16.pdf Description: IC DDR2 SDRAM 512MBIT 60BGA
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MT47H64M8CF-25E:G TR MT47H64M8CF-25E:G TR Micron Technology Inc. MT47H128M4,64M8,32M16.pdf Description: IC DDR2 SDRAM 512MBIT 60BGA
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MT48H16M16LFBF-75 IT:H TR MT48H16M16LFBF-75 IT:H TR Micron Technology Inc. Description: IC DRAM 256M PARALLEL 54VFBGA
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MT48H8M16LFB4-75 IT:K TR MT48H8M16LFB4-75 IT:K TR Micron Technology Inc. MT48H_8M16%2C4M32.pdf Description: IC DRAM 128MBIT PAR 54VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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MT48H8M16LFB4-75:K TR MT48H8M16LFB4-75:K TR Micron Technology Inc. Y25M_128Mb_mobile_lpsdr_sdram_x16.pdf Description: IC SDRAM 128MBIT 133MHZ 54VFBGA
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MT29F16G08ABABAWP-IT:B TR MT29F16G08ABABAWP-IT:B TR Micron Technology Inc. Description: IC FLSH 16GBIT PARALLEL 48TSOP I
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MT29F1G08ABADAWP:D TR MT29F1G08ABADAWP:D TR Micron Technology Inc. Description: IC FLASH 1GBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 128M x 8
DigiKey Programmable: Verified
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MT29F1G08ABBDAHC:D TR MT29F1G08ABBDAHC:D TR Micron Technology Inc. Description: IC FLASH 1GBIT 63VFBGA
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)
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MT29F2G08ABAEAH4:E TR MT29F2G08ABAEAH4:E TR Micron Technology Inc. m79a-2gb-embedded-nand-ecc-off.pdf Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Cut Tape (CT)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
2+241.13 грн
10+216.87 грн
25+210.47 грн
50+192.97 грн
100+188.43 грн
250+182.45 грн
500+175.04 грн
Мінімальне замовлення: 2
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MT29F2G08ABAEAWP:E TR MT29F2G08ABAEAWP:E TR Micron Technology Inc. m79a-2gb-embedded-nand-ecc-off.pdf Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Verified
на замовлення 2636 шт:
термін постачання 21-31 дні (днів)
2+238.74 грн
10+214.34 грн
25+208.04 грн
50+190.75 грн
100+186.26 грн
250+180.35 грн
500+173.03 грн
Мінімальне замовлення: 2
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MT29F2G08ABAEAWP-IT:E TR MT29F2G08ABAEAWP-IT:E TR Micron Technology Inc. m79a-2gb-embedded-nand-ecc-off.pdf Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Verified
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MT29F8G08ABABAWP:B TR MT29F8G08ABABAWP:B TR Micron Technology Inc. Description: IC FLASH 8GBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 1G x 8
DigiKey Programmable: Verified
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MT29F8G08ABABAWP-IT:B TR MT29F8G08ABABAWP-IT:B TR Micron Technology Inc. Description: IC FLASH 8GBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 1G x 8
DigiKey Programmable: Verified
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MT41J128M16HA-15E:D TR MT41J128M16HA-15E:D TR Micron Technology Inc. MT41J256M4%2C128M8%2C64M16.pdf Description: IC DRAM 2GBIT PAR 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 667 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (9x14)
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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MT41J128M8JP-15E:G TR MT41J128M8JP-15E:G TR Micron Technology Inc. MT41J256M4%2C128M8%2C64M16.pdf Description: IC DRAM 1GBIT PAR 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 667 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x11.5)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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MT41J256M8HX-15E IT:D TR MT41J256M8HX-15E IT:D TR Micron Technology Inc. MT41J512M4_256M8_128M16_Rev_P.pdf Description: IC DRAM 2GBIT PAR 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 667 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9x11.5)
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT41J256M8HX-15E:D TR MT41J256M8HX-15E:D TR Micron Technology Inc. MT41J512M4_256M8_128M16_Rev_P.pdf Description: IC DRAM 2GBIT PAR 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 667 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9x11.5)
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT41J64M16JT-15E:G TR MT41J64M16JT-15E:G TR Micron Technology Inc. MT41J256M4%2C128M8%2C64M16.pdf Description: IC DRAM 1GBIT PAR 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 667 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT46H16M16LFBF-6 IT:H TR MT46H16M16LFBF-6 IT:H TR Micron Technology Inc. T36M_256Mb_mobile_lpddr_sdram.pdf Description: IC LPDDR SDRAM 256MBIT 60VFBGA
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MT46H16M16LFBF-6:H TR MT46H16M16LFBF-6:H TR Micron Technology Inc. T36M_256Mb_mobile_lpddr_sdram.pdf Description: IC LPDDR SDRAM 256MBIT 60VFBGA
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MT46H32M16LFBF-6 IT:C TR MT46H32M16LFBF-6 IT:C TR Micron Technology Inc. T67M_512Mb_mobile_lpddr_sdram.pdf Description: IC LPDDR SDRAM 512MBIT 60VFBGA
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MT46H32M32LFB5-6 IT:B TR MT46H32M32LFB5-6 IT:B TR Micron Technology Inc. T68M_1Gb_mobile_lpddr_sdram.pdf Description: IC LPDDR SDRAM 1GBIT 90VBGA
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MT46H64M16LFBF-6 IT:B TR MT46H64M16LFBF-6 IT:B TR Micron Technology Inc. MT46H_64M16LF,32M32LF,LG.pdf Description: IC DRAM 1GBIT PARALLEL 60VFBGA
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MT46V16M16CY-6 IT:K TR MT46V16M16CY-6 IT:K TR Micron Technology Inc. 256mb_ddr.pdf Description: IC DRAM 256MBIT PAR 60FBGA
Packaging: Cut Tape (CT)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT46V16M16CY-6:K TR MT46V16M16CY-6:K TR Micron Technology Inc. 256mb_ddr.pdf Description: IC DRAM 256MBIT PAR 60FBGA
Packaging: Cut Tape (CT)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT46V16M16P-5B IT:K TR MT46V16M16P-5B IT:K TR Micron Technology Inc. 256mb_ddr.pdf Description: IC DRAM 256MBIT PARALLEL 66TSOP
Packaging: Cut Tape (CT)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT46V16M16P-5B:K TR MT46V16M16P-5B:K TR Micron Technology Inc. DS_557_MT46V64M4, 32M8, 16M16.pdf Description: IC DRAM 256MBIT PARALLEL 66TSOP
Packaging: Cut Tape (CT)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT46V16M16P-6T IT:K TR MT46V16M16P-6T IT:K TR Micron Technology Inc. 256mb_ddr.pdf Description: IC DRAM 256MBIT PAR 66TSOP
Packaging: Cut Tape (CT)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT46V16M16P-6T:K TR MT46V16M16P-6T:K TR Micron Technology Inc. 256mb_ddr.pdf Description: IC DRAM 256MBIT PAR 66TSOP
Packaging: Cut Tape (CT)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT46V32M16P-5B IT:F TR MT46V32M16P-5B IT:F TR Micron Technology Inc. 512Mb_DDR.pdf Description: IC DDR SDRAM 512MBIT 5NS 66TSOP
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MT47H128M8CF-25:H TR MT47H128M8CF-25:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 60FBGA
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В кошику  од. на суму  грн.
MT47H128M8CF-25E IT:H TR MT47H128M8CF-25E IT:H TR Micron Technology Inc. 1Gb_DDR2.pdf Description: IC DDR2 SDRAM 1GBIT 2.5NS 60FBGA
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MT47H128M8CF-25E:H TR MT47H128M8CF-25E:H TR Micron Technology Inc. 1Gb_DDR2.pdf Description: IC DDR2 SDRAM 1GBIT 2.5NS 60FBGA
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MT47H128M8CF-3 IT:H TR MT47H128M8CF-3 IT:H TR Micron Technology Inc. 1Gb_DDR2.pdf Description: IC DDR2 SDRAM 1GBIT 3NS 60FBGA
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MT47H128M8CF-3:H TR MT47H128M8CF-3:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 60FBGA
Packaging: Cut Tape (CT)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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MT47H32M16HR-25E IT:G TR MT47H32M16HR-25E IT:G TR Micron Technology Inc. 512MbDDR2.pdf Description: IC DDR2 SDRAM 512MBIT 84BGA
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MT47H64M16HR-25:H TR MT47H64M16HR-25:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
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MT47H64M16HR-25E IT:H TR MT47H64M16HR-25E IT:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
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MT47H64M16HR-25E:H TR MT47H64M16HR-25E:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
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MT47H64M16HR-3 AAT:H TR MT47H64M16HR-3 AAT:H TR Micron Technology Inc. MT47H256M4%2C128M8%2C64M16.pdf Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT47H64M16HR-3 IT:H TR MT47H64M16HR-3 IT:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
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В кошику  од. на суму  грн.
MT47H64M16HR-3:H TR MT47H64M16HR-3:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT47H64M8CF-25E IT:G TR MT47H64M8CF-25E IT:G TR Micron Technology Inc. MT47H128M4,64M8,32M16.pdf Description: IC DDR2 SDRAM 512MBIT 60BGA
товару немає в наявності
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MT47H64M8CF-25E:G TR MT47H64M8CF-25E:G TR Micron Technology Inc. MT47H128M4,64M8,32M16.pdf Description: IC DDR2 SDRAM 512MBIT 60BGA
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MT48H16M16LFBF-75 IT:H TR MT48H16M16LFBF-75 IT:H TR Micron Technology Inc. Description: IC DRAM 256M PARALLEL 54VFBGA
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MT48H8M16LFB4-75:K TR MT48H8M16LFB4-75:K TR Micron Technology Inc. Y25M_128Mb_mobile_lpsdr_sdram_x16.pdf Description: IC SDRAM 128MBIT 133MHZ 54VFBGA
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MT48LC2M32B2B5-7 IT:G TR MT48LC2M32B2B5-7 IT:G TR Micron Technology Inc. MT48LC2M32B2_.pdf Description: IC DRAM 64MBIT PAR 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 143 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (8x13)
Part Status: Obsolete
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 2M x 32
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MT46V32M16P-5B IT:F TR 512Mb_DDR.pdf
MT46V32M16P-5B IT:F TR
Виробник: Micron Technology Inc.
Description: IC DDR SDRAM 512MBIT 5NS 66TSOP
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MT47H128M8CF-25:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H128M8CF-25:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 60FBGA
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MT47H128M8CF-25E IT:H TR 1Gb_DDR2.pdf
MT47H128M8CF-25E IT:H TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 1GBIT 2.5NS 60FBGA
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MT47H128M8CF-25E:H TR 1Gb_DDR2.pdf
MT47H128M8CF-25E:H TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 1GBIT 2.5NS 60FBGA
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MT47H128M8CF-3 IT:H TR 1Gb_DDR2.pdf
MT47H128M8CF-3 IT:H TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 1GBIT 3NS 60FBGA
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MT47H128M8CF-3:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H128M8CF-3:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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MT47H32M16HR-25E IT:G TR 512MbDDR2.pdf
MT47H32M16HR-25E IT:G TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 512MBIT 84BGA
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MT47H64M16HR-25:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H64M16HR-25:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
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MT47H64M16HR-25E IT:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H64M16HR-25E IT:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
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MT47H64M16HR-25E:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H64M16HR-25E:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
товару немає в наявності
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MT47H64M16HR-3 AAT:H TR MT47H256M4%2C128M8%2C64M16.pdf
MT47H64M16HR-3 AAT:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT47H64M16HR-3 IT:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H64M16HR-3 IT:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
товару немає в наявності
В кошику  од. на суму  грн.
MT47H64M16HR-3:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H64M16HR-3:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT47H64M8CF-25E IT:G TR MT47H128M4,64M8,32M16.pdf
MT47H64M8CF-25E IT:G TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 512MBIT 60BGA
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MT47H64M8CF-25E:G TR MT47H128M4,64M8,32M16.pdf
MT47H64M8CF-25E:G TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 512MBIT 60BGA
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MT48H16M16LFBF-75 IT:H TR
MT48H16M16LFBF-75 IT:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256M PARALLEL 54VFBGA
товару немає в наявності
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MT48H8M16LFB4-75 IT:K TR MT48H_8M16%2C4M32.pdf
MT48H8M16LFB4-75 IT:K TR
Виробник: Micron Technology Inc.
Description: IC DRAM 128MBIT PAR 54VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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MT48H8M16LFB4-75:K TR Y25M_128Mb_mobile_lpsdr_sdram_x16.pdf
MT48H8M16LFB4-75:K TR
Виробник: Micron Technology Inc.
Description: IC SDRAM 128MBIT 133MHZ 54VFBGA
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MT29F16G08ABABAWP-IT:B TR
MT29F16G08ABABAWP-IT:B TR
Виробник: Micron Technology Inc.
Description: IC FLSH 16GBIT PARALLEL 48TSOP I
товару немає в наявності
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MT29F1G08ABADAWP:D TR
MT29F1G08ABADAWP:D TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 128M x 8
DigiKey Programmable: Verified
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MT29F1G08ABBDAHC:D TR
MT29F1G08ABBDAHC:D TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1GBIT 63VFBGA
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)
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MT29F2G08ABAEAH4:E TR m79a-2gb-embedded-nand-ecc-off.pdf
MT29F2G08ABAEAH4:E TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Cut Tape (CT)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+241.13 грн
10+216.87 грн
25+210.47 грн
50+192.97 грн
100+188.43 грн
250+182.45 грн
500+175.04 грн
Мінімальне замовлення: 2
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MT29F2G08ABAEAWP:E TR m79a-2gb-embedded-nand-ecc-off.pdf
MT29F2G08ABAEAWP:E TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Verified
на замовлення 2636 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+238.74 грн
10+214.34 грн
25+208.04 грн
50+190.75 грн
100+186.26 грн
250+180.35 грн
500+173.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MT29F2G08ABAEAWP-IT:E TR m79a-2gb-embedded-nand-ecc-off.pdf
MT29F2G08ABAEAWP-IT:E TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Verified
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MT29F8G08ABABAWP:B TR
MT29F8G08ABABAWP:B TR
Виробник: Micron Technology Inc.
Description: IC FLASH 8GBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 1G x 8
DigiKey Programmable: Verified
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MT29F8G08ABABAWP-IT:B TR
MT29F8G08ABABAWP-IT:B TR
Виробник: Micron Technology Inc.
Description: IC FLASH 8GBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 1G x 8
DigiKey Programmable: Verified
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MT41J128M16HA-15E:D TR MT41J256M4%2C128M8%2C64M16.pdf
MT41J128M16HA-15E:D TR
Виробник: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 667 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (9x14)
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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MT41J128M8JP-15E:G TR MT41J256M4%2C128M8%2C64M16.pdf
MT41J128M8JP-15E:G TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 667 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x11.5)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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MT41J256M8HX-15E IT:D TR MT41J512M4_256M8_128M16_Rev_P.pdf
MT41J256M8HX-15E IT:D TR
Виробник: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 667 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9x11.5)
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT41J256M8HX-15E:D TR MT41J512M4_256M8_128M16_Rev_P.pdf
MT41J256M8HX-15E:D TR
Виробник: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 667 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9x11.5)
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT41J64M16JT-15E:G TR MT41J256M4%2C128M8%2C64M16.pdf
MT41J64M16JT-15E:G TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 667 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT46H16M16LFBF-6 IT:H TR T36M_256Mb_mobile_lpddr_sdram.pdf
MT46H16M16LFBF-6 IT:H TR
Виробник: Micron Technology Inc.
Description: IC LPDDR SDRAM 256MBIT 60VFBGA
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MT46H16M16LFBF-6:H TR T36M_256Mb_mobile_lpddr_sdram.pdf
MT46H16M16LFBF-6:H TR
Виробник: Micron Technology Inc.
Description: IC LPDDR SDRAM 256MBIT 60VFBGA
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MT46H32M16LFBF-6 IT:C TR T67M_512Mb_mobile_lpddr_sdram.pdf
MT46H32M16LFBF-6 IT:C TR
Виробник: Micron Technology Inc.
Description: IC LPDDR SDRAM 512MBIT 60VFBGA
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MT46H32M32LFB5-6 IT:B TR T68M_1Gb_mobile_lpddr_sdram.pdf
MT46H32M32LFB5-6 IT:B TR
Виробник: Micron Technology Inc.
Description: IC LPDDR SDRAM 1GBIT 90VBGA
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MT46H64M16LFBF-6 IT:B TR MT46H_64M16LF,32M32LF,LG.pdf
MT46H64M16LFBF-6 IT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 60VFBGA
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MT46V16M16CY-6 IT:K TR 256mb_ddr.pdf
MT46V16M16CY-6 IT:K TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256MBIT PAR 60FBGA
Packaging: Cut Tape (CT)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT46V16M16CY-6:K TR 256mb_ddr.pdf
MT46V16M16CY-6:K TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256MBIT PAR 60FBGA
Packaging: Cut Tape (CT)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT46V16M16P-5B IT:K TR 256mb_ddr.pdf
MT46V16M16P-5B IT:K TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256MBIT PARALLEL 66TSOP
Packaging: Cut Tape (CT)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT46V16M16P-5B:K TR DS_557_MT46V64M4, 32M8, 16M16.pdf
MT46V16M16P-5B:K TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256MBIT PARALLEL 66TSOP
Packaging: Cut Tape (CT)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT46V16M16P-6T IT:K TR 256mb_ddr.pdf
MT46V16M16P-6T IT:K TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256MBIT PAR 66TSOP
Packaging: Cut Tape (CT)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT46V16M16P-6T:K TR 256mb_ddr.pdf
MT46V16M16P-6T:K TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256MBIT PAR 66TSOP
Packaging: Cut Tape (CT)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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MT46V32M16P-5B IT:F TR 512Mb_DDR.pdf
MT46V32M16P-5B IT:F TR
Виробник: Micron Technology Inc.
Description: IC DDR SDRAM 512MBIT 5NS 66TSOP
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MT47H128M8CF-25:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H128M8CF-25:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 60FBGA
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MT47H128M8CF-25E IT:H TR 1Gb_DDR2.pdf
MT47H128M8CF-25E IT:H TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 1GBIT 2.5NS 60FBGA
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MT47H128M8CF-25E:H TR 1Gb_DDR2.pdf
MT47H128M8CF-25E:H TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 1GBIT 2.5NS 60FBGA
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MT47H128M8CF-3 IT:H TR 1Gb_DDR2.pdf
MT47H128M8CF-3 IT:H TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 1GBIT 3NS 60FBGA
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MT47H128M8CF-3:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H128M8CF-3:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 60FBGA
Packaging: Cut Tape (CT)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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MT47H32M16HR-25E IT:G TR 512MbDDR2.pdf
MT47H32M16HR-25E IT:G TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 512MBIT 84BGA
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MT47H64M16HR-25:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H64M16HR-25:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
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MT47H64M16HR-25E IT:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H64M16HR-25E IT:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
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MT47H64M16HR-25E:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H64M16HR-25E:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
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MT47H64M16HR-3 AAT:H TR MT47H256M4%2C128M8%2C64M16.pdf
MT47H64M16HR-3 AAT:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT47H64M16HR-3 IT:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H64M16HR-3 IT:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
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MT47H64M16HR-3:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
MT47H64M16HR-3:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT47H64M8CF-25E IT:G TR MT47H128M4,64M8,32M16.pdf
MT47H64M8CF-25E IT:G TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 512MBIT 60BGA
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MT47H64M8CF-25E:G TR MT47H128M4,64M8,32M16.pdf
MT47H64M8CF-25E:G TR
Виробник: Micron Technology Inc.
Description: IC DDR2 SDRAM 512MBIT 60BGA
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MT48H16M16LFBF-75 IT:H TR
MT48H16M16LFBF-75 IT:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 256M PARALLEL 54VFBGA
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MT48H8M16LFB4-75:K TR Y25M_128Mb_mobile_lpsdr_sdram_x16.pdf
MT48H8M16LFB4-75:K TR
Виробник: Micron Technology Inc.
Description: IC SDRAM 128MBIT 133MHZ 54VFBGA
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MT48LC2M32B2B5-7 IT:G TR MT48LC2M32B2_.pdf
MT48LC2M32B2B5-7 IT:G TR
Виробник: Micron Technology Inc.
Description: IC DRAM 64MBIT PAR 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 143 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (8x13)
Part Status: Obsolete
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 2M x 32
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