Виробник: onsemi
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W

Виробник: ONSEMI
Description: ONSEMI - 2SC3070-AE - 2SC3070-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

Виробник: Sanyo
Description: 2SC3070 - NPN EPITAXIAL PLANAR S
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W

Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 0.7A; 0.6W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.7A
Power dissipation: 0.6W
Case: TO92
Current gain: 600...3200
Mounting: THT
Frequency: 270MHz