Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube

Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
кількість в упаковці: 1 шт

Виробник: MULTICOMP PRO
Description: MULTICOMP PRO - BD680 - Darlington-Transistor, Darlington, PNP, 80 V, 40 W, 4 A, TO-126, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
DC-Stromverstärkung hFE: 750hFE
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 40W
euEccn: NLR
Bauform - HF-Transistor: TO-126
Kollektor-Emitter-Spannung V(br)ceo: 80V
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Wandlerpolarität: PNP
DC-Kollektorstrom: 4A
Betriebstemperatur, max.: 150°C
SVHC: Lead (17-Jan-2023)

Виробник: STMicroelectronics
Description: TRANS PNP DARL 80V 4A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W

Виробник: STMicroelectronics
Trans Darlington PNP 80V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube

Виробник: STMicroelectronics
Trans Darlington PNP 80V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube

Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - BD680 - Darlington-Transistor, Darlington, PNP, 80 V, 40 W, 4 A, SOT-32, 3 Pin(s)
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
DC-Kollektorstrom: 4A
Anzahl der Pins: 3Pin(s)
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Kollektor-Emitter-Spannung V(br)ceo: 80V
Verlustleistung Pd: 40W
Betriebstemperatur, max.: 150°C
usEccn: EAR99
Produktpalette: Multicomp Pro RJ45 Adapter

Виробник: STMicroelectronics
Trans Darlington PNP 80V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube

Виробник: STMicroelectronics
Trans Darlington PNP 80V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube

Виробник: ST
Darl.PNP 4A 80V 40W 1MHz BD680 TBD680
кількість в упаковці: 50 шт

Виробник: ST
Darl.PNP 4A 80V 40W 1MHz BD680 TBD680
кількість в упаковці: 50 шт

Виробник: STMicroelectronics
Darlington Transistors DARLINGTON TRAN

Виробник: ONSEMI
Description: ONSEMI - BD680AG - Darlington-Transistor, PNP, 3 Pin(s)
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Anzahl der Pins: 3Pin(s)
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, max.: 150°C
usEccn: EAR99

Виробник: ONSEMI
Description: ONSEMI - BD680ASTU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

Виробник: ONSEMI
Description: ONSEMI - BD680G - Darlington-Transistor, PNP, 80 V, 40 W, 4 A, TO-225AA, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
DC-Stromverstärkung hFE: 750hFE
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 40W
euEccn: NLR
Bauform - HF-Transistor: TO-225AA
Kollektor-Emitter-Spannung V(br)ceo: 80V
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
DC-Kollektorstrom: 4A
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (19-Jan-2021)

Виробник: ON Semiconductor
Trans Darlington PNP 80V 4A 40000mW 3-Pin(3+Tab) TO-225 Box

Виробник: STMicroelectronics NV
PNP 80 V 4 A SOT-32

Виробник: YFW
Darl.PNP 4A 80V 40W 1MHz BD680 TBD680 c

Виробник: YFW
Darl.PNP 4A 100V 40W 1MHz BD680A TBD680a

Виробник: Panasonic Electronic Components
Description: RES 680 OHM 0.5% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±0.5%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±50ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 680 Ohms

Виробник: Panasonic
Thick Film Resistors - SMD 0603 Resistor 0.5% 50ppm 680Ohm

Виробник: Panasonic Electronic Components
Description: RES 680 OHM 0.5% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±0.5%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±50ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 680 Ohms

Виробник: PANASONIC
Category: SMD resistors
Description: Resistor: thick film
Type of resistor: thick film

Виробник: Panasonic
Thick Film Resistors - SMD Thick Film Chip Resistor, 0603,0.5%Preci

Виробник: Panasonic Electronic Components
Description: RES 68K OHM 0.5% 1/10W 0603
Packaging: Tape & Reel (TR)
Part Status: Active
Power (Watts): 0.1W, 1/10W
Tolerance: ±0.5%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±50ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 68 kOhms

Виробник: Panasonic Electronic Components
Description: RES 68K OHM 0.5% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±0.5%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±50ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 68 kOhms

Виробник: Panasonic
Thick Film Resistors - SMD 68K OHM .5%

Виробник: Panasonic Electronic Components
Description: RES 680 OHM 0.5% 1/10W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±0.5%
Features: Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±50ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 680 Ohms

Виробник: Panasonic Electronic Components
Description: RES 680 OHM 0.5% 1/10W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±0.5%
Features: Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±50ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 680 Ohms

Виробник: Panasonic
Thick Film Resistors - SMD 0805 Resistor 0.5% 50ppm 680Ohm

Виробник: Panasonic
Thick Film Resistors - SMD 0805 Resistor 0.5% 50ppm 6.8KOhm

Виробник: Panasonic
Thick Film Resistors - SMD 0805 Resistor 0.5% 50ppm 68KOhm

Виробник: CDIL
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Current gain: 750
Mounting: THT
Kind of package: tube

Виробник: CDIL
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Current gain: 750
Mounting: THT
Kind of package: tube
кількість в упаковці: 5 шт

Виробник: CDIL
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Current gain: 750
Mounting: THT
Kind of package: tube

Виробник: CDIL
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Current gain: 750
Mounting: THT
Kind of package: tube
кількість в упаковці: 5 шт

Виробник: NTE Electronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Current gain: 2k
Mounting: THT
Kind of package: bulk

Транзистори > Біполярні PNP
Корпус: SOT-32
Uке, В: 80 V
Uкб, В: 80 V
Iк, А: 4 А
h21,max: 750

Транзистори > Біполярні PNP
Корпус: SOT-32
Uке, В: 80 V
Uкб, В: 80 V
Iк, А: 4 А
h21,max: 750

Транзистори > Біполярні PNP

Транзистори > Біполярні PNP

Виробник: onsemi
Description: TRANS PNP DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W

Виробник: STMicroelectronics
Trans Darlington PNP 80V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube

Виробник: STMicroelectronics
Trans Darlington PNP 80V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube

Виробник: onsemi
Darlington Transistors 4A 80V Bipolar

Виробник: STMicroelectronics
Trans Darlington PNP 80V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube

Виробник: STMicroelectronics
Description: TRANS PNP DARL 80V 4A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W

Виробник: ON Semiconductor
Trans Darlington PNP 80V 4A 40000mW 3-Pin(3+Tab) TO-225 Box

Виробник: onsemi
Description: TRANS PNP DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W

Виробник: ON Semiconductor
Trans Darlington PNP 80V 4A 14000mW 3-Pin(3+Tab) TO-126 Bag

Виробник: onsemi
Description: TRANS PNP DARL 80V 4A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 14 W

Виробник: ON Semiconductor
Trans Darlington PNP 80V 4A 14000mW 3-Pin(3+Tab) TO-126 Tube

Виробник: onsemi
Description: TRANS PNP DARL 80V 4A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 14 W

Виробник: Panjit
Schottky Diodes & Rectifiers

Виробник: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 80V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V

Виробник: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 80V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V

Виробник: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 80V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V

Виробник: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 80V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V

Виробник: onsemi
Description: TRANS PNP DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W

Виробник: onsemi
Darlington Transistors 4A 80V Bipolar Power PNP