Продукція > TSM
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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| TSM060N03ECP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 30V 70A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM060N03ECP ROG | Taiwan Semiconductor | MOSFETs 30V, 70A, Single N-Channel Power MOSFET | на замовлення 5816 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM060N03ECP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 30V 70A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V | на замовлення 8447 шт: термін постачання 21-31 дні (днів) |
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| TSM060N03PQ33 | Taiwan Semiconductor Corporation | Description: 30V, 62A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PDFN (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Part Status: Active Packaging: Tape & Reel (TR) | товару немає в наявності | Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
| TSM060N03PQ33 RGG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 62A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V | на замовлення 12022 шт: термін постачання 21-31 дні (днів) |
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| TSM060N03PQ33 RGG | Taiwan Semiconductor | MOSFETs 30V, 62A, Single N-Channel Power MOSFET | на замовлення 9984 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM060N03PQ33 RGG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 62A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM060NB06CZ C0G | Taiwan Semiconductor Corporation | Description: 60V, 111A, SINGLE N-CHANNEL POWE Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V Power Dissipation (Max): 2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6842 pF @ 30 V | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| TSM060NB06CZ C0G | Taiwan Semiconductor | MOSFET 60V, 111A, Single N-Channel Power MOSFET | товару немає в наявності | Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
| TSM060NB06LCZ C0G | Taiwan Semiconductor | MOSFET 60V, 111A, Single N-Channel Power MOSFET | товару немає в наявності | Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
| TSM060NB06LCZ C0G | Taiwan Semiconductor Corporation | Description: 60V, 111A, SINGLE N-CHANNEL POWE Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V Power Dissipation (Max): 2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6273 pF @ 30 V | на замовлення 3970 шт: термін постачання 21-31 дні (днів) |
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| TSM061NA03CR | Taiwan Semiconductor | MOSFET Power MOSFET, N-CHL 30V, 88A, 6.1mOhm | на замовлення 100 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM061NA03CR RLG | Taiwan Semiconductor | MOSFET Power MOSFET, N-CHL 30V, 88A, 6.1mOhm | на замовлення 100 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM061NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 88A 8PDFN | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM061NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 88A 8PDFN | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| TSM061NA03CV | Taiwan Semiconductor | MOSFET Power MOSFET, N-CHL, 30V, 66A, 6.1mOhm | на замовлення 100 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM061NA03CV RGG | Taiwan Semiconductor | MOSFET Power MOSFET, N-CHL, 30V, 66A, 6.1mOhm | на замовлення 97 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM061NA03CV RGG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 66A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 16A, 10V Power Dissipation (Max): 44.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 15 V | товару немає в наявності | Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
| TSM070NA04LCR | Taiwan Semiconductor | MOSFET Power MOSFET, N-CHL, 40V, 91A, 7mOhm | на замовлення 80 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM070NA04LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 91A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1469 pF @ 20 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM070NA04LCR RLG | Taiwan Semiconductor | MOSFET Power MOSFET, N-CHL, 40V, 91A, 7mOhm | на замовлення 80 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM070NA04LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 91A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1469 pF @ 20 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| TSM070NB04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 75A, Single N-Channel Power MOSFET | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM070NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 15A/75A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 2403 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PDFN (5.2x5.75) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Tape & Reel (TR) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| TSM070NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 15A/75A 8PDFN Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2403 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PDFN (5.2x5.75) | на замовлення 4830 шт: термін постачання 21-31 дні (днів) |
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| TSM070NB04LCR | Taiwan Semiconductor | Trans MOSFET N-CH 40V 75A 8-Pin PDFN EP T/R | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM070NB04LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 15A/75A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM070NB04LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 15A/75A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Tape & Reel (TR) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM070NB04LCR RLG | Taiwan Semiconductor | MOSFETs 40V, 75A, Single N-Channel Power MOSFET | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM070NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 46.8W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 25 V | на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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| TSM070NH04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | на замовлення 2496 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM070NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 46.8W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 25 V | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| TSM070NH04CV RGG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | на замовлення 9972 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM070NH04CV RGG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 25 V | на замовлення 9904 шт: термін постачання 21-31 дні (днів) |
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| TSM070NH04CV RGG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 25 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM070NH04LCR | Taiwan Semiconductor | Trans MOSFET N-CH 40V 54A 8-Pin PDFN-U EP | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM070NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 46.8W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) FET Type: N-Channel | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| TSM070NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 46.8W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | на замовлення 4345 шт: термін постачання 21-31 дні (днів) |
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| TSM070NH04LCR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | на замовлення 2500 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM070NH04LCV RGG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1376 pF @ 25 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM070NH04LCV RGG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | на замовлення 9873 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM070NH04LCV RGG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1376 pF @ 25 V | на замовлення 9850 шт: термін постачання 21-31 дні (днів) |
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| TSM075NH10CR RLG | Taiwan Semiconductor Corporation | Description: 100A, 100V, SINGLE, N-CHANNEL LO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1538 pF @ 60 V Qualification: AEC-Q101 | на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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| TSM075NH10CR RLG | Taiwan Semiconductor Corporation | Description: 100A, 100V, SINGLE, N-CHANNEL LO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1538 pF @ 60 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| TSM075NH10LCR RLG | Taiwan Semiconductor Corporation | Description: 100A, 100V, SINGLE, N-CHANNEL LO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 60 V Qualification: AEC-Q101 | на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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| TSM075NH10LCR RLG | Taiwan Semiconductor Corporation | Description: 100A, 100V, SINGLE, N-CHANNEL LO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 60 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| TSM076NH04DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 14A 8PDFNU Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 55.6W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | на замовлення 4432 шт: термін постачання 21-31 дні (днів) |
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| TSM076NH04DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 14A 8PDFNU Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 55.6W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| TSM076NH04DCR RLG | Taiwan Semiconductor | MOSFETs 40V, 34A, Dual N-Channel Power MOSFET | на замовлення 4997 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM076NH04LDCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 14A 8PDFNU Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 55.6W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| TSM076NH04LDCR RLG | Taiwan Semiconductor | MOSFETs 40V, 34A, Dual N-Channel Power MOSFET | на замовлення 2003 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM076NH04LDCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 14A 8PDFNU Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 55.6W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | на замовлення 4425 шт: термін постачання 21-31 дні (днів) |
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| TSM080N03EPQ56 | Taiwan Semiconductor Corporation | Description: 30V, 55A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x5.8) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V | товару немає в наявності | Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||
| TSM080N03EPQ56 RLG | Taiwan Semiconductor | MOSFETs 30V, 55A, Single N-Channel Power MOSFET | на замовлення 7968 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM080N03EPQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 55A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V | на замовлення 3902 шт: термін постачання 21-31 дні (днів) |
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| TSM080N03EPQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 55A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V | товару немає в наявності | Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||
| TSM080N03PQ56 | Taiwan Semiconductor Corporation | Description: 30V, 73A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Power Dissipation (Max): 2.6W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 843 pF @ 15 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM080N03PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 73A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 843 pF @ 15 V | на замовлення 2325 шт: термін постачання 21-31 дні (днів) |
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| TSM080N03PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 73A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 843 pF @ 15 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM080N03PQ56 RLG | Taiwan Semiconductor | MOSFETs 30V, 73A, Single N-Channel Power MOSFET | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM080NB03CR RLG | Taiwan Semiconductor | MOSFET 30V, 59A, Single N-Channel Power MOSFET | на замовлення 2459 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM080NB03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 14A/59A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM080NB03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 14A/59A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM085N03PQ33 | Taiwan Semiconductor Corporation | Description: 30V, 52A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V Power Dissipation (Max): 2.3W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V | товару немає в наявності | Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
| TSM085N03PQ33 RGG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 52A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V | на замовлення 5948 шт: термін постачання 21-31 дні (днів) |
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| TSM085N03PQ33 RGG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 52A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM085N03PQ33 RGG | Taiwan Semiconductor | MOSFET 30V, 52A, Single N-Channel Power MOSFET | на замовлення 3783 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM085NB03CV RGG | Taiwan Semiconductor Corporation | Description: 30V, 58A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 11A, 10V Power Dissipation (Max): 1.92W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1101 pF @ 15 V | на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
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| TSM085NB03CV RGG | Taiwan Semiconductor Corporation | Description: 30V, 58A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 11A, 10V Power Dissipation (Max): 1.92W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1101 pF @ 15 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM085NB03DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 30V 12A/51A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFNU (5x6) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM085NB03DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 30V 12A/51A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFNU (5x6) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM085P03CS | Taiwan Semiconductor Corporation | Description: -30, -34, SINGLE P-CHANNEL Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V Power Dissipation (Max): 14W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3216 pF @ 15 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM085P03CS RLG | Taiwan Semiconductor Co., Ltd. | Transistor P-Channel MOSFET; 30V; 20V; 14mOhm; 34A; 14W; -55°C ~ 150°C; TSM085P03CS RLG TSM085P03CS TTSM085p03cs кількість в упаковці: 25 шт | на замовлення 40 шт: термін постачання 28-31 дні (днів) |
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| TSM085P03CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 30V 34A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V Power Dissipation (Max): 14W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3216 pF @ 15 V | на замовлення 13045 шт: термін постачання 21-31 дні (днів) |
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| TSM085P03CS RLG | Taiwan Semiconductor | MOSFETs -30, -34, Single P-Channel | на замовлення 6006 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM085P03CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 30V 34A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V Power Dissipation (Max): 14W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3216 pF @ 15 V | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| TSM085P03CV RGG | Taiwan Semiconductor | MOSFETs -30, -64, Single P-Channel | на замовлення 9082 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM085P03CV RGG | Taiwan Semiconductor Corporation | Description: MOSFET P-CH 30V 64A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3234 pF @ 15 V | на замовлення 960 шт: термін постачання 21-31 дні (днів) |
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| TSM085P03CV RGG | Taiwan Semiconductor Corporation | Description: MOSFET P-CH 30V 64A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3234 pF @ 15 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM088NA03CR | Taiwan Semiconductor | MOSFET Power MOSFET, N-CHL, 30V, 61A, 8.8mOhm | на замовлення 100 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM088NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 61A 8PDFN | на замовлення 5000 шт: термін постачання 21-31 дні (днів) | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| TSM088NA03CR RLG | Taiwan Semiconductor | MOSFET Power MOSFET, N-CHL, 30V, 61A, 8.8mOhm | на замовлення 80 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM088NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 61A 8PDFN | на замовлення 5000 шт: термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM089N08LCR | Taiwan Semiconductor Corporation | Description: 80V, 67A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 67A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V Power Dissipation (Max): 2.6W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V | товару немає в наявності | Мінімальне замовлення: 60000 шт В кошику од. на суму грн. | ||||||||||||
| TSM089N08LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 80V 67A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V | на замовлення 8736 шт: термін постачання 21-31 дні (днів) |
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| TSM089N08LCR RLG | Taiwan Semiconductor | MOSFETs 80V, 67A, Single N-Channel Power MOSFET | на замовлення 4832 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM089N08LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 80V 67A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V | на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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| TSM090N03CP | Taiwan Semiconductor Corporation | Description: 30V, 50A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM090N03CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 30V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V | на замовлення 4079 шт: термін постачання 21-31 дні (днів) |
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| TSM090N03CP ROG | Taiwan Semiconductor | MOSFETs 30V, 50A, Single N-Channel Power MOSFET | на замовлення 5413 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM090N03CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 30V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| TSM090N03CP ROG | TAIWAN SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| TSM090N03ECP | Taiwan Semiconductor Corporation | Description: 30V, 50A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| TSM090N03ECP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 30V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V | на замовлення 10672 шт: термін постачання 21-31 дні (днів) |
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| TSM090N03ECP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 30V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| TSM090N03ECP ROG | Taiwan Semiconductor | MOSFETs 30V, 50A, Single N-Channel Power MOSFET | на замовлення 474 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM098NM10CP ROG | Taiwan Semiconductor Corporation | Description: 100V, 49A, SINGLE, N-CHANNEL LOW Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-252A Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 50 V Qualification: AEC-Q101 | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| TSM098NM10CP ROG | Taiwan Semiconductor | MOSFETs 100V, 49A, Single, N-Channel Low Voltage MOSFETs | на замовлення 2250 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| TSM098NM10CP ROG | Taiwan Semiconductor Corporation | Description: 100V, 49A, SINGLE, N-CHANNEL LOW Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-252A Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 50 V Qualification: AEC-Q101 | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| TSM0A103F34D1RZ | Thinking Electronics Industrial Co. | Description: NTC Thermistor 0402 10KoHm +/-1% B25/85: 3435K Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 0402 (1005 Metric) Packaging: Bag Power - Max: 170 mW Part Status: Active Resistance Tolerance: ±1% Resistance in Ohms @ 25°C: 10k B Value Tolerance: ±1% | на замовлення 268 шт: термін постачання 21-31 дні (днів) |
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