Продукція > YJ1
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|
| YJ1.5-21.4-0.5AU | WEIPU | Category: WEIPU connectors Description: Contact; male; gold-plated; crimped; for cable Type of connector: circular Connector: contact Kind of connector: male Contact plating: gold-plated Electrical mounting: crimped Mechanical mounting: for cable кількість в упаковці: 500 шт | товар відсутній | |
| YJ1.5-21.4-0.5AU | WEIPU | Category: WEIPU connectors Description: Contact; male; gold-plated; crimped; for cable Type of connector: circular Connector: contact Kind of connector: male Contact plating: gold-plated Electrical mounting: crimped Mechanical mounting: for cable | товар відсутній | |
| YJ101 | на замовлення 9000 шт: термін постачання 14-28 дні (днів) | |||
| YJ1010BPC | на замовлення 25 шт: термін постачання 14-28 дні (днів) | |||
| YJ1020-5B | на замовлення 4384 шт: термін постачання 14-28 дні (днів) | |||
| YJ10N60CZ | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 40A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm | товар відсутній | |
| YJ10N60CZ | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 40A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm кількість в упаковці: 1 шт | товар відсутній | |
| YJ10N65CI | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 40A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 860mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |
| YJ10N65CI | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 40A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 860mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced | товар відсутній | |
| YJ12N65CZ | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.5A; Idm: 46A; 240W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 46A Power dissipation: 240W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm кількість в упаковці: 1 шт | товар відсутній | |
| YJ12N65CZ | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.5A; Idm: 46A; 240W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 46A Power dissipation: 240W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm | товар відсутній |