Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (32043) > Сторінка 348 з 535
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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74LV1T32GVH | Nexperia USA Inc. |
Description: IC GATE OR 1CH 2-INP SC74ACurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 30pF Input Logic Level - Low: 0.58 ~ 0.8V Input Logic Level - High: 0.94 ~ 2.1V Supplier Device Package: SC-74A Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 125°C Logic Type: OR Gate Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LV1T32GVH | Nexperia USA Inc. |
Description: IC GATE OR 1CH 2-INP SC74ACurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 30pF Input Logic Level - Low: 0.58 ~ 0.8V Input Logic Level - High: 0.94 ~ 2.1V Supplier Device Package: SC-74A Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 125°C Logic Type: OR Gate Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 5343 шт: термін постачання 21-31 дні (днів) |
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BUK6E3R4-40C,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A I2PAKInput Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 204W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HCT175PW,118 | Nexperia USA Inc. |
Description: IC FF D-TYPE SGL 4-BIT 16-TSSOPPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 4mA, 4mA Trigger Type: Positive Edge Clock Frequency: 49 MHz Input Capacitance: 3.5 pF Supplier Device Package: 16-TSSOP Max Propagation Delay @ V, Max CL: 33ns @ 4.5V, 50pF Part Status: Active Number of Bits per Element: 4 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74HCT175PW,118 | Nexperia USA Inc. |
Description: IC FF D-TYPE SGL 4-BIT 16-TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 4mA, 4mA Trigger Type: Positive Edge Clock Frequency: 49 MHz Input Capacitance: 3.5 pF Supplier Device Package: 16-TSSOP Max Propagation Delay @ V, Max CL: 33ns @ 4.5V, 50pF Part Status: Active Number of Bits per Element: 4 |
на замовлення 4927 шт: термін постачання 21-31 дні (днів) |
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74HC2G125DC-Q100H | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 6V 8-VSSOPPackaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 8-VSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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74HC2G125DC-Q100H | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 6V 8-VSSOPPackaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 8-VSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2722 шт: термін постачання 21-31 дні (днів) |
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74HC299D-Q100J | Nexperia USA Inc. |
Description: IC SHFT REG TRI-STATE 8BIT 20-SOPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 5V Supplier Device Package: 20-SO Part Status: Active Number of Bits per Element: 8 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1965 шт: термін постачання 21-31 дні (днів) |
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74LVC1GU04GX,125 | Nexperia USA Inc. |
Description: IC INVERTER 1CH 1-INP 5X2SONPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: 5-X2SON (0.80x0.80) Input Logic Level - High: 1.32V ~ 4.4V Input Logic Level - Low: 0.33V ~ 1.1V Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 4 µA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LVC1GU04GX,125 | Nexperia USA Inc. |
Description: IC INVERTER 1CH 1-INP 5X2SONPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: 5-X2SON (0.80x0.80) Input Logic Level - High: 1.32V ~ 4.4V Input Logic Level - Low: 0.33V ~ 1.1V Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 4 µA |
на замовлення 9595 шт: термін постачання 21-31 дні (днів) |
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BZX79-C18,133 | Nexperia USA Inc. |
Description: DIODE ZENER 18V 400MW ALF2Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: ALF2 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V |
на замовлення 6585 шт: термін постачання 21-31 дні (днів) |
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BZX79-C18,133 | Nexperia USA Inc. |
Description: DIODE ZENER 18V 400MW ALF2Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: ALF2 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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PESD18VF1BLS-QYL | Nexperia USA Inc. |
Description: TVS DIODE 18VWM 20VC DFN1006BD2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 0.31pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 18V (Max) Supplier Device Package: DFN1006BD-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 20V (Typ) Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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PESD18VF1BLS-QYL | Nexperia USA Inc. |
Description: TVS DIODE 18VWM 20VC DFN1006BD2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 0.31pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 18V (Max) Supplier Device Package: DFN1006BD-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 20V (Typ) Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 4833 шт: термін постачання 21-31 дні (днів) |
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BZX8850S-C36YL | Nexperia USA Inc. |
Description: DIODE ZENER 36V 365MW DFN1006BDTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DFN1006BD-2 Part Status: Obsolete Power - Max: 365 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
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PDTC144EM,315 | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V SOT883Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-883 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
| S25FL127SABMFI003 | Nexperia USA Inc. |
Description: S25FL127S - (16 MB) 3.0 V SPI Fl Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74HC373DB,112 | Nexperia USA Inc. |
Description: IC D-TYPE TRANSP 8:8 20-SSOPPackaging: Bulk Package / Case: 20-SSOP (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 7.8mA, 7.8mA Delay Time - Propagation: 12ns Supplier Device Package: 20-SSOP Part Status: Obsolete |
на замовлення 7238 шт: термін постачання 21-31 дні (днів) |
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PMXB350UPEZ | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1.2A DFN1010D-3Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: DFN1010D-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Power Dissipation (Max): 360mW (Ta), 5.68W (Tc) Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) FET Type: P-Channel |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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PMXB350UPEZ | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1.2A DFN1010D-3Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: DFN1010D-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 360mW (Ta), 5.68W (Tc) Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 4205 шт: термін постачання 21-31 дні (днів) |
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PMXB43UNEZ | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 3.2A DFN1010D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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PMXB43UNEZ | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 3.2A DFN1010D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMDXB950UPEL/S500Z | Nexperia USA Inc. |
Description: PMDXB950UPEL - 20 V, DUAL P-CHANPackage / Case: 6-XFDFN Exposed Pad Packaging: Bulk Part Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 265mW (Ta), 4.025W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PMCXB900UEL/S500Z | Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 0.6A 6DFN Part Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 0.95V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, 1.4Ohm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, 43pF @ 10V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 265mW (Ta), 4.03W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Bulk |
на замовлення 4300 шт: термін постачання 21-31 дні (днів) |
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PMDXB290UNEZ | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.93A 6DFNPart Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 280mW (Ta), 6W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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PMDXB290UNEZ | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.93A 6DFNPart Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 280mW (Ta), 6W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1607 шт: термін постачання 21-31 дні (днів) |
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BC817DPN | Nexperia USA Inc. |
Description: NOW NEXPERIA BC817 - SMALL SIGNAPackaging: Bulk Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 370mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz, 80MHz Supplier Device Package: SOT-23-6L Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC2G74GT,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SINGLE 1-BIT 8XSONPackaging: Tape & Reel (TR) Package / Case: 8-XFDFN Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Iq): 40 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 200 MHz Input Capacitance: 4 pF Supplier Device Package: 8-XSON, SOT833-1 (1.95x1) Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LVC2G74GT,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SINGLE 1-BIT 8XSONPackaging: Cut Tape (CT) Package / Case: 8-XFDFN Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Iq): 40 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 200 MHz Input Capacitance: 4 pF Supplier Device Package: 8-XSON, SOT833-1 (1.95x1) Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 2912 шт: термін постачання 21-31 дні (днів) |
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74LVC2G74GD,125 | Nexperia USA Inc. |
Description: IC FF D-TYPE SINGLE 1BIT 8XSONPackaging: Tape & Reel (TR) Package / Case: 8-XFDFN Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Iq): 40 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 200 MHz Input Capacitance: 4 pF Supplier Device Package: 8-XSON (2x3) Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF Part Status: Obsolete Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC2G74GN,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SINGLE 1BIT 8XSONPackaging: Tape & Reel (TR) Package / Case: 8-XFDFN Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Iq): 40 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 200 MHz Input Capacitance: 4 pF Supplier Device Package: 8-XSON (1.2x1) Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G175GN,132 | Nexperia USA Inc. |
Description: IC FF D-TYPE SNGL 1BIT 6XSONNumber of Bits per Element: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Supplier Device Package: 6-XSON (0.9x1) Input Capacitance: 2.5 pF Clock Frequency: 200 MHz Trigger Type: Positive Edge Current - Output High, Low: 32mA, 32mA Current - Quiescent (Iq): 40 µA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Type: D-Type Function: Reset Number of Elements: 1 Mounting Type: Surface Mount Output Type: Non-Inverted Package / Case: 6-XFDFN Packaging: Bulk |
на замовлення 109850 шт: термін постачання 21-31 дні (днів) |
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PTVS20VS1UR/8X | Nexperia USA Inc. |
Description: TVS DIODE 20VWM 32.4VC SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: Automotive Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V (Max) Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PTVS20VS1UR-QX | Nexperia USA Inc. |
Description: TVS DIODE 20VWM 32.4VC SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V (Max) Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BC817K-25R | Nexperia USA Inc. |
Description: TRANS NPN 45V 0.5A TO-236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC817K-25R | Nexperia USA Inc. |
Description: TRANS NPN 45V 0.5A TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q100 |
на замовлення 104 шт: термін постачання 21-31 дні (днів) |
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BC857BQB-QZ | Nexperia USA Inc. |
Description: SMALL SIGNAL BIPOLAR IN DFN PACKPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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PMDPB30XNZ | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 4A 6HUSONPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW (Ta), 8.33W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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PMDPB30XNZ | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 4A 6HUSONPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW (Ta), 8.33W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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74LVC257ADB,112 | Nexperia USA Inc. |
Description: IC MULTIPLEXER 4 X 2:1 16-SSOPPackaging: Bulk Package / Case: 16-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SSOP Part Status: Active |
на замовлення 6102 шт: термін постачання 21-31 дні (днів) |
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74HC573BQ,115 | Nexperia USA Inc. |
Description: IC D-TYPE TRANSP 8:8 20-DHVQFNPackaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 7.8mA, 7.8mA Delay Time - Propagation: 14ns Supplier Device Package: 20-DHVQFN (4.5x2.5) Part Status: Active |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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74HC573BQ,115 | Nexperia USA Inc. |
Description: IC D-TYPE TRANSP 8:8 20-DHVQFNPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 7.8mA, 7.8mA Delay Time - Propagation: 14ns Supplier Device Package: 20-DHVQFN (4.5x2.5) Part Status: Active |
на замовлення 21398 шт: термін постачання 21-31 дні (днів) |
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BCX71K,235 | Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HCT86D/C5J | Nexperia USA Inc. |
Description: IC GATE XOR 4CH 2-INP 14SOPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SO Input Logic Level - High: 1.6V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 132500 шт: термін постачання 21-31 дні (днів) |
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PZU5.1B3A-QX | Nexperia USA Inc. |
Description: DIODE ZENER 5.26V 320MW SOD323Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.26 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-323 Grade: Automotive Part Status: Active Power - Max: 320 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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PZU5.1B3A-QX | Nexperia USA Inc. |
Description: DIODE ZENER 5.26V 320MW SOD323Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.26 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-323 Grade: Automotive Part Status: Active Power - Max: 320 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BZX384-C6V8-QX | Nexperia USA Inc. |
Description: BZX384-C6V8-Q/SOD323/SOD2Current - Reverse Leakage @ Vr: 2 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| BZX384-B6V8-QX | Nexperia USA Inc. |
Description: BZX384-B6V8-Q/SOD323/SOD2Current - Reverse Leakage @ Vr: 2 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±2% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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74HCT4053D-Q100,11 | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 3 120OHM 16SOPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 120Ohm -3db Bandwidth: 170MHz Supplier Device Package: 16-SO Voltage - Supply, Single (V+): 4.5V ~ 5.5V Voltage - Supply, Dual (V±): ±1V ~ 5V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 6Ohm Switch Time (Ton, Toff) (Max): 34ns, 31ns Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 100nA Grade: Automotive Part Status: Active Number of Circuits: 3 Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74HCT4053DB,118 | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 3 120OHM 16SSOPPackaging: Tape & Reel (TR) Package / Case: 16-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 120Ohm -3db Bandwidth: 170MHz Supplier Device Package: 16-SSOP Voltage - Supply, Single (V+): 4.5V ~ 5.5V Voltage - Supply, Dual (V±): ±1V ~ 5V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 6Ohm Switch Time (Ton, Toff) (Max): 34ns, 31ns Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Obsolete Number of Circuits: 3 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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GAN190-650FBEZ | Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDEPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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GAN190-650FBEZ | Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDEPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
на замовлення 1393 шт: термін постачання 21-31 дні (днів) |
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GAN140-650EBEZ | Nexperia USA Inc. |
Description: 650 V, 140 MOHM GALLIUM NITRIDEPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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GAN140-650EBEZ | Nexperia USA Inc. |
Description: 650 V, 140 MOHM GALLIUM NITRIDEPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
на замовлення 2355 шт: термін постачання 21-31 дні (днів) |
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GAN190-650EBEZ | Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDEPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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GAN190-650EBEZ | Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDEPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
на замовлення 933 шт: термін постачання 21-31 дні (днів) |
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GAN140-650FBEZ | Nexperia USA Inc. |
Description: 650 V, 140 MOHM GALLIUM NITRIDEPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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GAN140-650FBEZ | Nexperia USA Inc. |
Description: 650 V, 140 MOHM GALLIUM NITRIDEPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
на замовлення 1942 шт: термін постачання 21-31 дні (днів) |
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PTVS9V0S1UTR,115 | Nexperia USA Inc. |
Description: TVS DIODE 9VWM 15.4VC SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 185°C (TA) Current - Peak Pulse (10/1000µs): 26A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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PTVS9V0S1UTR,115 | Nexperia USA Inc. |
Description: TVS DIODE 9VWM 15.4VC SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 185°C (TA) Current - Peak Pulse (10/1000µs): 26A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 2742 шт: термін постачання 21-31 дні (днів) |
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| 74LV1T32GVH |
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Виробник: Nexperia USA Inc.
Description: IC GATE OR 1CH 2-INP SC74A
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 30pF
Input Logic Level - Low: 0.58 ~ 0.8V
Input Logic Level - High: 0.94 ~ 2.1V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC GATE OR 1CH 2-INP SC74A
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 30pF
Input Logic Level - Low: 0.58 ~ 0.8V
Input Logic Level - High: 0.94 ~ 2.1V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| 74LV1T32GVH |
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Виробник: Nexperia USA Inc.
Description: IC GATE OR 1CH 2-INP SC74A
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 30pF
Input Logic Level - Low: 0.58 ~ 0.8V
Input Logic Level - High: 0.94 ~ 2.1V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC GATE OR 1CH 2-INP SC74A
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 30pF
Input Logic Level - Low: 0.58 ~ 0.8V
Input Logic Level - High: 0.94 ~ 2.1V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 5343 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.52 грн |
| 21+ | 14.66 грн |
| 25+ | 12.98 грн |
| 100+ | 10.48 грн |
| 250+ | 9.66 грн |
| 500+ | 9.17 грн |
| 1000+ | 8.62 грн |
| BUK6E3R4-40C,127 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 40V 100A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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| 74HCT175PW,118 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SGL 4-BIT 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 49 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-TSSOP
Max Propagation Delay @ V, Max CL: 33ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 4
Description: IC FF D-TYPE SGL 4-BIT 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 49 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-TSSOP
Max Propagation Delay @ V, Max CL: 33ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 4
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 20.03 грн |
| 74HCT175PW,118 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SGL 4-BIT 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 49 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-TSSOP
Max Propagation Delay @ V, Max CL: 33ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 4
Description: IC FF D-TYPE SGL 4-BIT 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 49 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-TSSOP
Max Propagation Delay @ V, Max CL: 33ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 4
на замовлення 4927 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.04 грн |
| 10+ | 30.29 грн |
| 50+ | 25.23 грн |
| 100+ | 22.20 грн |
| 74HC2G125DC-Q100H |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 6V 8-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 8-VSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 6V 8-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 8-VSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| 74HC2G125DC-Q100H |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 6V 8-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 8-VSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 6V 8-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 8-VSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2722 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.73 грн |
| 13+ | 24.38 грн |
| 25+ | 21.78 грн |
| 100+ | 17.78 грн |
| 250+ | 16.51 грн |
| 500+ | 15.75 грн |
| 1000+ | 15.06 грн |
| 74HC299D-Q100J |
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Виробник: Nexperia USA Inc.
Description: IC SHFT REG TRI-STATE 8BIT 20-SO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5V
Supplier Device Package: 20-SO
Part Status: Active
Number of Bits per Element: 8
Grade: Automotive
Qualification: AEC-Q100
Description: IC SHFT REG TRI-STATE 8BIT 20-SO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5V
Supplier Device Package: 20-SO
Part Status: Active
Number of Bits per Element: 8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.89 грн |
| 10+ | 54.00 грн |
| 25+ | 48.79 грн |
| 100+ | 40.47 грн |
| 250+ | 37.93 грн |
| 500+ | 36.72 грн |
| 74LVC1GU04GX,125 |
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Виробник: Nexperia USA Inc.
Description: IC INVERTER 1CH 1-INP 5X2SON
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-X2SON (0.80x0.80)
Input Logic Level - High: 1.32V ~ 4.4V
Input Logic Level - Low: 0.33V ~ 1.1V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Description: IC INVERTER 1CH 1-INP 5X2SON
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-X2SON (0.80x0.80)
Input Logic Level - High: 1.32V ~ 4.4V
Input Logic Level - Low: 0.33V ~ 1.1V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 74LVC1GU04GX,125 |
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Виробник: Nexperia USA Inc.
Description: IC INVERTER 1CH 1-INP 5X2SON
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-X2SON (0.80x0.80)
Input Logic Level - High: 1.32V ~ 4.4V
Input Logic Level - Low: 0.33V ~ 1.1V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Description: IC INVERTER 1CH 1-INP 5X2SON
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 5-X2SON (0.80x0.80)
Input Logic Level - High: 1.32V ~ 4.4V
Input Logic Level - Low: 0.33V ~ 1.1V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
на замовлення 9595 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.20 грн |
| 35+ | 8.60 грн |
| 40+ | 7.54 грн |
| 100+ | 6.04 грн |
| 250+ | 5.53 грн |
| 500+ | 5.23 грн |
| 1000+ | 4.90 грн |
| 2500+ | 4.71 грн |
| BZX79-C18,133 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 18V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Description: DIODE ZENER 18V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 6585 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.54 грн |
| 75+ | 4.04 грн |
| 163+ | 1.84 грн |
| 500+ | 1.60 грн |
| 1000+ | 1.36 грн |
| 2000+ | 1.30 грн |
| 5000+ | 1.21 грн |
| BZX79-C18,133 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 18V 400MW ALF2
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Description: DIODE ZENER 18V 400MW ALF2
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PESD18VF1BLS-QYL |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 18VWM 20VC DFN1006BD2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006BD-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 20VC DFN1006BD2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006BD-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PESD18VF1BLS-QYL |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 18VWM 20VC DFN1006BD2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006BD-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 20VC DFN1006BD2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006BD-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 4833 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.42 грн |
| 28+ | 10.69 грн |
| 100+ | 7.28 грн |
| 500+ | 5.61 грн |
| 1000+ | 4.77 грн |
| 2000+ | 4.59 грн |
| BZX8850S-C36YL |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 36V 365MW DFN1006BD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Obsolete
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Description: DIODE ZENER 36V 365MW DFN1006BD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Obsolete
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
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Мінімальне замовлення: 30000 шт
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| PDTC144EM,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V SOT883
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: TRANS PREBIAS NPN 50V SOT883
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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Мінімальне замовлення: 10000 шт
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| S25FL127SABMFI003 |
Виробник: Nexperia USA Inc.
Description: S25FL127S - (16 MB) 3.0 V SPI Fl
Packaging: Bulk
Part Status: Active
Description: S25FL127S - (16 MB) 3.0 V SPI Fl
Packaging: Bulk
Part Status: Active
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| 74HC373DB,112 |
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Виробник: Nexperia USA Inc.
Description: IC D-TYPE TRANSP 8:8 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 12ns
Supplier Device Package: 20-SSOP
Part Status: Obsolete
Description: IC D-TYPE TRANSP 8:8 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 12ns
Supplier Device Package: 20-SSOP
Part Status: Obsolete
на замовлення 7238 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 449+ | 45.61 грн |
| PMXB350UPEZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
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Мінімальне замовлення: 5000 шт
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| PMXB350UPEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 4205 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.85 грн |
| 21+ | 14.51 грн |
| 100+ | 7.18 грн |
| 500+ | 6.48 грн |
| 1000+ | 6.16 грн |
| PMXB43UNEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
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Мінімальне замовлення: 5000 шт
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| PMXB43UNEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
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| PMDXB950UPEL/S500Z |
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Виробник: Nexperia USA Inc.
Description: PMDXB950UPEL - 20 V, DUAL P-CHAN
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 265mW (Ta), 4.025W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Description: PMDXB950UPEL - 20 V, DUAL P-CHAN
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 265mW (Ta), 4.025W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3579+ | 6.21 грн |
| PMCXB900UEL/S500Z |
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.6A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 0.95V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, 1.4Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 265mW (Ta), 4.03W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
Description: MOSFET N/P-CH 20V 0.6A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 0.95V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, 1.4Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 265mW (Ta), 4.03W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
на замовлення 4300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4300+ | 6.62 грн |
| PMDXB290UNEZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 0.93A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 280mW (Ta), 6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 0.93A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 280mW (Ta), 6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 5000 шт
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| PMDXB290UNEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 0.93A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 280mW (Ta), 6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 0.93A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 280mW (Ta), 6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1607 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.07 грн |
| 15+ | 21.31 грн |
| 100+ | 10.75 грн |
| 500+ | 8.24 грн |
| 1000+ | 6.11 грн |
| BC817DPN |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA BC817 - SMALL SIGNA
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz, 80MHz
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: NOW NEXPERIA BC817 - SMALL SIGNA
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz, 80MHz
Supplier Device Package: SOT-23-6L
Part Status: Active
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| 74LVC2G74GT,115 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 1-BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE SINGLE 1-BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| 74LVC2G74GT,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 1-BIT 8XSON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE SINGLE 1-BIT 8XSON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 2912 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.53 грн |
| 31+ | 9.80 грн |
| 35+ | 8.62 грн |
| 100+ | 6.93 грн |
| 250+ | 6.36 грн |
| 500+ | 6.02 грн |
| 1000+ | 5.65 грн |
| 2500+ | 5.48 грн |
| 74LVC2G74GD,125 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 1BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON (2x3)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 1
Description: IC FF D-TYPE SINGLE 1BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON (2x3)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 1
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| 74LVC2G74GN,115 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 1BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON (1.2x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE SINGLE 1BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON (1.2x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 74LVC1G175GN,132 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Number of Bits per Element: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Supplier Device Package: 6-XSON (0.9x1)
Input Capacitance: 2.5 pF
Clock Frequency: 200 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 32mA
Current - Quiescent (Iq): 40 µA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 6-XFDFN
Packaging: Bulk
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Number of Bits per Element: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Supplier Device Package: 6-XSON (0.9x1)
Input Capacitance: 2.5 pF
Clock Frequency: 200 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 32mA
Current - Quiescent (Iq): 40 µA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 6-XFDFN
Packaging: Bulk
на замовлення 109850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2882+ | 7.40 грн |
| PTVS20VS1UR/8X |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 20VWM 32.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 20VWM 32.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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В кошику
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| PTVS20VS1UR-QX |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 20VWM 32.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BC817K-25R |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q100
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q100
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| BC817K-25R |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q100
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q100
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.43 грн |
| 41+ | 7.33 грн |
| 100+ | 4.55 грн |
| BC857BQB-QZ |
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Виробник: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Qualification: AEC-Q101
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PMDPB30XNZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta), 8.33W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta), 8.33W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMDPB30XNZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta), 8.33W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta), 8.33W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.37 грн |
| 74LVC257ADB,112 |
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Виробник: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16-SSOP
Packaging: Bulk
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SSOP
Part Status: Active
Description: IC MULTIPLEXER 4 X 2:1 16-SSOP
Packaging: Bulk
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SSOP
Part Status: Active
на замовлення 6102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 418+ | 47.90 грн |
| 74HC573BQ,115 |
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Виробник: Nexperia USA Inc.
Description: IC D-TYPE TRANSP 8:8 20-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 14ns
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 14ns
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.21 грн |
| 6000+ | 14.26 грн |
| 9000+ | 14.06 грн |
| 15000+ | 12.99 грн |
| 74HC573BQ,115 |
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Виробник: Nexperia USA Inc.
Description: IC D-TYPE TRANSP 8:8 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 14ns
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 14ns
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
на замовлення 21398 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.95 грн |
| 13+ | 23.41 грн |
| 25+ | 20.91 грн |
| 100+ | 17.07 грн |
| 250+ | 15.84 грн |
| 500+ | 15.11 грн |
| 1000+ | 14.40 грн |
| BCX71K,235 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| 74HCT86D/C5J |
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Виробник: Nexperia USA Inc.
Description: IC GATE XOR 4CH 2-INP 14SO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.6V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE XOR 4CH 2-INP 14SO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.6V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 132500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1043+ | 19.74 грн |
| PZU5.1B3A-QX |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.26V 320MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.26 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.26V 320MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.26 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PZU5.1B3A-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.26V 320MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.26 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.26V 320MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.26 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZX384-C6V8-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: BZX384-C6V8-Q/SOD323/SOD2
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: BZX384-C6V8-Q/SOD323/SOD2
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZX384-B6V8-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: BZX384-B6V8-Q/SOD323/SOD2
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: BZX384-B6V8-Q/SOD323/SOD2
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74HCT4053D-Q100,11 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC SWITCH SPDT X 3 120OHM 16SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 170MHz
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 34ns, 31ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Qualification: AEC-Q100
Description: IC SWITCH SPDT X 3 120OHM 16SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 170MHz
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 34ns, 31ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 499+ | 40.75 грн |
| 74HCT4053DB,118 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC SWITCH SPDT X 3 120OHM 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 170MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 34ns, 31ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 120OHM 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 170MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 34ns, 31ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 3
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| GAN190-650FBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GAN190-650FBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
на замовлення 1393 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 388.32 грн |
| 10+ | 249.41 грн |
| 100+ | 178.45 грн |
| 500+ | 150.59 грн |
| GAN140-650EBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GAN140-650EBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
на замовлення 2355 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 587.91 грн |
| 10+ | 385.45 грн |
| 100+ | 282.93 грн |
| 500+ | 261.45 грн |
| GAN190-650EBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GAN190-650EBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
на замовлення 933 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 420.94 грн |
| 10+ | 270.88 грн |
| 100+ | 194.74 грн |
| 500+ | 167.33 грн |
| GAN140-650FBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GAN140-650FBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
на замовлення 1942 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 542.87 грн |
| 10+ | 354.42 грн |
| 100+ | 258.92 грн |
| 500+ | 235.30 грн |
| PTVS9V0S1UTR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PTVS9V0S1UTR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.82 грн |
| 11+ | 27.30 грн |
| 50+ | 19.83 грн |
| 100+ | 16.32 грн |




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