| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| PSMN3R3-40MLHX | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 84A; Idm: 475A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 84A Pulsed drain current: 475A Power dissipation: 101W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN3R3-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 546A; 117W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 546A Power dissipation: 117W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PSMN3R3-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 830A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 830A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 139nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMN4R5-40PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 545A; 148W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 545A Power dissipation: 148W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: THT Gate charge: 42.3nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PSMN4R5-40BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 96A; Idm: 545A; 148W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 96A Pulsed drain current: 545A Power dissipation: 148W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 42.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NZH16C,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123F; Ifmax: 250mA Type of diode: Zener Case: SOD123F Mounting: SMD Semiconductor structure: single diode Max. forward voltage: 0.9V Leakage current: 0.04µA Kind of package: reel; tape Zener voltage: 16V Power dissipation: 0.5W Tolerance: ±2.5% Max. load current: 0.25A |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
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| PSMN2R0-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 667A Power dissipation: 97W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BUK964R7-80E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 667A; 324W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 667A Power dissipation: 324W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 92.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74ALVCH16841DGGY | NEXPERIA |
Category: Latches Description: IC: digital; 20bit,3-state,bus interface,D latch; Ch: 2; IN: 12 Number of inputs: 12 Supply voltage: 1.2...3.6V DC Type of integrated circuit: digital Number of channels: 2 Kind of output: 3-state Kind of package: reel; tape Technology: CMOS; TTL Kind of integrated circuit: 3-state; 20bit; bus interface; D latch Family: ALVCH Mounting: SMD Operating temperature: -40...85°C Case: TSSOP56 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
BZT52-C13X | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOD123; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.35W Zener voltage: 13V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Max. load current: 0.25A Max. forward voltage: 0.9V |
на замовлення 5735 шт: термін постачання 21-30 дні (днів) |
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| 74LVC2G04GW-Q100H | NEXPERIA |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
на замовлення 155500 шт: термін постачання 21-30 дні (днів) |
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74HCT03PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Family: HCT Delay time: 36ns Kind of output: open drain Kind of package: reel; tape Quiescent current: 40µA Technology: CMOS; TTL Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
TDZ20J,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; Ifmax: 250mA Power dissipation: 0.5W Case: SOD323F Mounting: SMD Kind of package: reel; tape Max. load current: 0.25A Max. forward voltage: 1.1V Semiconductor structure: single diode Zener voltage: 20V Leakage current: 50nA Type of diode: Zener Tolerance: ±2% |
на замовлення 1239 шт: термін постачання 21-30 дні (днів) |
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| 74AVC20T245DGG,118 | NEXPERIA |
Category: Level translators Description: IC: digital; 20bit,3-state,transceiver,translator; Ch: 2; SMD Type of integrated circuit: digital Operating temperature: -40...125°C Case: TSSOP56 Supply voltage: 0.8...3.6V DC Number of channels: 2 Kind of output: 3-state Kind of package: reel; tape Technology: CMOS; TTL Kind of integrated circuit: 3-state; 20bit; transceiver; translator Family: AVC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PBSS5350D,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP Type of transistor: PNP |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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| BAS516,315 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching Type of diode: switching |
на замовлення 40000 шт: термін постачання 21-30 дні (днів) |
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| BAS516,135 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching Type of diode: switching |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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RB520S30,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Case: SC79; SOD523 Capacitance: 20pF Max. off-state voltage: 30V Max. forward voltage: 0.6V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Leakage current: 1µA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB521CS30L,315 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 30V; 0.1A Case: DFN1006-2; SOD882 Capacitance: 8pF Max. off-state voltage: 30V Max. forward voltage: 0.405V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 3A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RB521S30,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Case: SC79; SOD523 Max. off-state voltage: 30V Max. forward voltage: 0.5V Load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky switching Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
74LVC86AD,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 1.2÷3.6VDC; 40uA Type of integrated circuit: digital Operating temperature: -40...125°C Case: SO14 Number of inputs: 2 Supply voltage: 1.2...3.6V DC Number of channels: quad; 4 Quiescent current: 40µA Delay time: 11.4ns Kind of package: reel; tape Kind of gate: XOR Technology: CMOS; TTL Family: LVC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 74LVC86ABQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC Type of integrated circuit: digital Operating temperature: -40...125°C Case: DHVQFN14 Number of inputs: 2 Supply voltage: 1.2...3.6V DC Number of channels: quad; 4 Quiescent current: 40µA Delay time: 11.4ns Kind of package: reel; tape Kind of gate: XOR Technology: CMOS; TTL Family: LVC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BZX84-C2V4-QR | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74HC595PW-Q100,118 | NEXPERIA |
Category: Shift registers Description: IC: digital Type of integrated circuit: digital |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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PDTD113ZUX | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 300mW; SC70,SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.3W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 225MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PDTA113ZU,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ6V8AL,215 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode Type of diode: TVS array Case: SOT23 Max. off-state voltage: 4.5V Semiconductor structure: common anode; double; unidirectional Breakdown voltage: 6.8V Leakage current: 10nA Number of channels: 2 Version: ESD Peak pulse power dissipation: 40W Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5V6AL,215 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.6V; 40W; unidirectional,double,common anode Type of diode: TVS array Breakdown voltage: 5.6V Peak pulse power dissipation: 40W Semiconductor structure: common anode; double; unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 3V Number of channels: 2 Leakage current: 240nA Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG2020AEA,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.525V Max. forward impulse current: 9A Leakage current: 0.2mA Capacitance: 70pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG2020EH,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.525V Max. load current: 7A Max. forward impulse current: 9A Capacitance: 60pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PMEG2020EJ,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.525V Capacitance: 60pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PMEG2020EJF | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PTVS24VS1UTR,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
на замовлення 3285 шт: термін постачання 21-30 дні (днів) |
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| PSMN3R3-40MLHX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 84A; Idm: 475A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 84A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 84A; Idm: 475A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 84A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
товару немає в наявності
В кошику
од. на суму грн.
| PSMN3R3-40YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 546A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 546A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 546A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 546A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMN3R3-80PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 830A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 830A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 830A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 830A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMN4R5-40PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 545A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 545A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 42.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 545A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 545A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 42.3nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMN4R5-40BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 96A; Idm: 545A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 545A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 42.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 96A; Idm: 545A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 545A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 42.3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NZH16C,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Type of diode: Zener
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Leakage current: 0.04µA
Kind of package: reel; tape
Zener voltage: 16V
Power dissipation: 0.5W
Tolerance: ±2.5%
Max. load current: 0.25A
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Type of diode: Zener
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Leakage current: 0.04µA
Kind of package: reel; tape
Zener voltage: 16V
Power dissipation: 0.5W
Tolerance: ±2.5%
Max. load current: 0.25A
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.55 грн |
| 55+ | 6.97 грн |
| 90+ | 4.26 грн |
| 100+ | 4.15 грн |
| 300+ | 3.28 грн |
| 322+ | 2.78 грн |
| 885+ | 2.64 грн |
| PSMN2R0-30YL,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BUK964R7-80E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 667A; 324W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 667A
Power dissipation: 324W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 92.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 667A; 324W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 667A
Power dissipation: 324W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 92.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| 74ALVCH16841DGGY |
|
Виробник: NEXPERIA
Category: Latches
Description: IC: digital; 20bit,3-state,bus interface,D latch; Ch: 2; IN: 12
Number of inputs: 12
Supply voltage: 1.2...3.6V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 20bit; bus interface; D latch
Family: ALVCH
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP56
Category: Latches
Description: IC: digital; 20bit,3-state,bus interface,D latch; Ch: 2; IN: 12
Number of inputs: 12
Supply voltage: 1.2...3.6V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 20bit; bus interface; D latch
Family: ALVCH
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP56
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| BZT52-C13X |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOD123; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Max. load current: 0.25A
Max. forward voltage: 0.9V
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOD123; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Max. load current: 0.25A
Max. forward voltage: 0.9V
на замовлення 5735 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 170+ | 2.48 грн |
| 190+ | 2.07 грн |
| 500+ | 1.82 грн |
| 545+ | 1.65 грн |
| 1500+ | 1.56 грн |
| 74LVC2G04GW-Q100H |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 155500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.61 грн |
| 74HCT03PW,118 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Delay time: 36ns
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS; TTL
Operating temperature: -40...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Delay time: 36ns
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS; TTL
Operating temperature: -40...125°C
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| TDZ20J,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Power dissipation: 0.5W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Max. load current: 0.25A
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Zener voltage: 20V
Leakage current: 50nA
Type of diode: Zener
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Power dissipation: 0.5W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Max. load current: 0.25A
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Zener voltage: 20V
Leakage current: 50nA
Type of diode: Zener
Tolerance: ±2%
на замовлення 1239 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.46 грн |
| 29+ | 13.26 грн |
| 100+ | 5.82 грн |
| 370+ | 2.42 грн |
| 1017+ | 2.29 грн |
| 74AVC20T245DGG,118 |
|
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 20bit,3-state,transceiver,translator; Ch: 2; SMD
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: TSSOP56
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 20bit; transceiver; translator
Family: AVC
Mounting: SMD
Category: Level translators
Description: IC: digital; 20bit,3-state,transceiver,translator; Ch: 2; SMD
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: TSSOP56
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 20bit; transceiver; translator
Family: AVC
Mounting: SMD
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| PBSS5350D,115 |
|
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.84 грн |
| BAS516,315 |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
на замовлення 40000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.29 грн |
| BAS516,135 |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.29 грн |
| RB520S30,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Case: SC79; SOD523
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Case: SC79; SOD523
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| RB521CS30L,315 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 30V; 0.1A
Case: DFN1006-2; SOD882
Capacitance: 8pF
Max. off-state voltage: 30V
Max. forward voltage: 0.405V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 3A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 30V; 0.1A
Case: DFN1006-2; SOD882
Capacitance: 8pF
Max. off-state voltage: 30V
Max. forward voltage: 0.405V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 3A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| RB521S30,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Case: SC79; SOD523
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Case: SC79; SOD523
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
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| 74LVC86AD,118 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 1.2÷3.6VDC; 40uA
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SO14
Number of inputs: 2
Supply voltage: 1.2...3.6V DC
Number of channels: quad; 4
Quiescent current: 40µA
Delay time: 11.4ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 1.2÷3.6VDC; 40uA
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SO14
Number of inputs: 2
Supply voltage: 1.2...3.6V DC
Number of channels: quad; 4
Quiescent current: 40µA
Delay time: 11.4ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Mounting: SMD
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| 74LVC86ABQ,115 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: DHVQFN14
Number of inputs: 2
Supply voltage: 1.2...3.6V DC
Number of channels: quad; 4
Quiescent current: 40µA
Delay time: 11.4ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: DHVQFN14
Number of inputs: 2
Supply voltage: 1.2...3.6V DC
Number of channels: quad; 4
Quiescent current: 40µA
Delay time: 11.4ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Mounting: SMD
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| BZX84-C2V4-QR |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
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| 74HC595PW-Q100,118 |
|
Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital
Type of integrated circuit: digital
Category: Shift registers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 9.08 грн |
| PDTD113ZUX |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 300mW; SC70,SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 225MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 300mW; SC70,SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 225MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
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| PDTA113ZU,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 35
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 35
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| MMBZ6V8AL,215 |
|
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Case: SOT23
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double; unidirectional
Breakdown voltage: 6.8V
Leakage current: 10nA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Case: SOT23
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double; unidirectional
Breakdown voltage: 6.8V
Leakage current: 10nA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
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| MMBZ5V6AL,215 |
|
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 5.6V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Leakage current: 240nA
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 5.6V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Leakage current: 240nA
Version: ESD
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| PMEG2020AEA,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. forward impulse current: 9A
Leakage current: 0.2mA
Capacitance: 70pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. forward impulse current: 9A
Leakage current: 0.2mA
Capacitance: 70pF
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| PMEG2020EH,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. load current: 7A
Max. forward impulse current: 9A
Capacitance: 60pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. load current: 7A
Max. forward impulse current: 9A
Capacitance: 60pF
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| PMEG2020EJ,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Capacitance: 60pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Capacitance: 60pF
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| PMEG2020EJF |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
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| PTVS24VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
на замовлення 3285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.88 грн |
| 22+ | 18.01 грн |
| 100+ | 12.49 грн |
| 114+ | 7.89 грн |
| 313+ | 7.43 грн |