Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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74LVC2G04GW-Q100H | NEXPERIA |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 155500 шт: термін постачання 21-30 дні (днів) |
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74HCT03PW,118 | NEXPERIA |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Family: HCT Delay time: 36ns Kind of output: open drain Kind of package: reel; tape Quiescent current: 40µA Technology: CMOS; TTL Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TDZ20J,115 | NEXPERIA |
![]() Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; Ifmax: 250mA Power dissipation: 0.5W Case: SOD323F Mounting: SMD Kind of package: reel; tape Max. load current: 0.25A Max. forward voltage: 1.1V Semiconductor structure: single diode Zener voltage: 20V Leakage current: 50nA Type of diode: Zener Tolerance: ±2% |
на замовлення 1239 шт: термін постачання 21-30 дні (днів) |
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74AVC20T245DGG,118 | NEXPERIA |
![]() Description: IC: digital; 20bit,3-state,transceiver,translator; Ch: 2; SMD Type of integrated circuit: digital Case: TSSOP56 Mounting: SMD Kind of package: reel; tape Technology: CMOS; TTL Kind of integrated circuit: 3-state; 20bit; transceiver; translator Family: AVC Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Number of channels: 2 Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PBSS5350D,115 | NEXPERIA |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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BAS516,315 | NEXPERIA |
![]() Description: Diode: switching Type of diode: switching |
на замовлення 40000 шт: термін постачання 21-30 дні (днів) |
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BAS516,135 | NEXPERIA |
![]() Description: Diode: switching Type of diode: switching |
на замовлення 40000 шт: термін постачання 21-30 дні (днів) |
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RB520S30,115 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Case: SC79; SOD523 Capacitance: 20pF Max. off-state voltage: 30V Max. forward voltage: 0.6V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Leakage current: 1µA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB521CS30L,315 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 30V; 0.1A Case: DFN1006-2; SOD882 Capacitance: 8pF Max. off-state voltage: 30V Max. forward voltage: 0.405V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 3A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RB521S30,115 | NEXPERIA |
![]() Description: Diode: Schottky switching; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74LVC86AD,118 | NEXPERIA |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 1.2÷3.6VDC; 40uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 1.2...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Delay time: 11.4ns Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
74LVC86ABQ,115 | NEXPERIA |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN14 Supply voltage: 1.2...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Delay time: 11.4ns Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BZX84-C2V4-QR | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74HC595PW-Q100,118 | NEXPERIA |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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PDTD113ZUX | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 300mW; SC70,SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.3W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 225MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PDTA113ZU,115 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ6V8AL,215 | NEXPERIA |
![]() Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode Type of diode: TVS array Breakdown voltage: 6.8V Semiconductor structure: common anode; double; unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Peak pulse power dissipation: 40W Leakage current: 10nA Number of channels: 2 Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5V6AL,215 | NEXPERIA |
![]() Description: Diode: TVS array; 5.6V; 40W; unidirectional,double,common anode Type of diode: TVS array Breakdown voltage: 5.6V Peak pulse power dissipation: 40W Semiconductor structure: common anode; double; unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 3V Number of channels: 2 Leakage current: 240nA Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG2020AEA,115 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.525V Max. forward impulse current: 9A Leakage current: 0.2mA Capacitance: 70pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG2020EH,115 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.525V Max. load current: 7A Max. forward impulse current: 9A Capacitance: 60pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PMEG2020EJ,115 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.525V Capacitance: 60pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PMEG2020EJF | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PTVS24VS1UTR,115 | NEXPERIA |
![]() Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
на замовлення 3285 шт: термін постачання 21-30 дні (днів) |
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1N4730A,113 | NEXPERIA |
![]() Description: Diode: Zener; 1W; 3.9V; 234mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 3.9V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1mA Max. forward voltage: 1.2V Zener current: 234mA Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
1N4730A,133 | NEXPERIA |
![]() ![]() Description: Diode: Zener; 1W; 3.9V; 234mA; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 3.9V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50µA Max. forward voltage: 1.2V Zener current: 234mA Kind of package: Ammo Pack Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PESD5V0L5UY,125 | NEXPERIA |
![]() Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6; ESD Type of diode: TVS array Max. off-state voltage: 5V Breakdown voltage: 6.4...7.2V Max. forward impulse current: 2.5A Semiconductor structure: common anode; fivefold; unidirectional Case: SC88; SOT363; TSSOP6 Mounting: SMD Leakage current: 25nA Version: ESD Peak pulse power dissipation: 25W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PESD5V0S1USF,315 | NEXPERIA |
![]() Description: Diode: TVS; 35W; 6÷8V; unidirectional; DSN0603-2,SOD962-2; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6...8V Semiconductor structure: unidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 0.1µA Version: ESD Peak pulse power dissipation: 35W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PESD5V0U4BF,115 | NEXPERIA |
![]() Description: Diode: TVS; 5.5÷9.5V; bidirectional; SOT886; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Semiconductor structure: bidirectional Case: SOT886 Mounting: SMD Leakage current: 0.1µA Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD5V0X1BCAL,315 | NEXPERIA |
![]() Description: Diode: TVS; 8.1÷12.3V; bidirectional; DFN1006-2,SOD882; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 8.1...12.3V Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 10nA Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HCT1G04GW,125 | NEXPERIA |
![]() Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; 2÷6VDC Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP5 Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: HCT Manufacturer series: Mini Logic |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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PESD3V3S4UD,115 | NEXPERIA |
![]() Description: Diode: TVS array; 5.6V; 200W; SC74,SOT457,TSOP6; ESD Type of diode: TVS array Case: SC74; SOT457; TSOP6 Max. off-state voltage: 3.3V Semiconductor structure: common anode; quadruple; unidirectional Breakdown voltage: 5.6V Leakage current: 0.8µA Version: ESD Peak pulse power dissipation: 0.2kW Mounting: SMD |
на замовлення 923 шт: термін постачання 21-30 дні (днів) |
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PESD3V3L4UW,115 | NEXPERIA |
![]() Description: Diode: TVS array; 5.6V; 3.5A; SOT665; ESD Type of diode: TVS array Case: SOT665 Capacitance: 28pF Max. off-state voltage: 3.3V Semiconductor structure: common anode; quadruple; unidirectional Max. forward impulse current: 3.5A Breakdown voltage: 5.6V Leakage current: 0.3µA Version: ESD Mounting: SMD |
на замовлення 2711 шт: термін постачання 21-30 дні (днів) |
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PESD3V3V1BLYL | NEXPERIA |
![]() Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882; ESD Type of diode: TVS Case: DFN1006-2; SOD882 Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Breakdown voltage: 4.5V Leakage current: 10nA Version: ESD Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD3V3L1UL,315 | NEXPERIA |
![]() Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882 Type of diode: TVS Case: DFN1006-2; SOD882 Max. off-state voltage: 3.3V Semiconductor structure: unidirectional Max. forward impulse current: 4.5A Breakdown voltage: 5.3...6V Leakage current: 0.3µA Version: ESD Peak pulse power dissipation: 45W Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD3V3X1BCSFYL | NEXPERIA |
![]() Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2; ESD Type of diode: TVS Case: DSN0603-2; SOD962-2 Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Max. forward impulse current: 8A Breakdown voltage: 10V Leakage current: 0.1µA Version: ESD Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PESD3V3L4UF,115 | NEXPERIA |
![]() Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886; ESD Type of diode: TVS Case: SOT886 Max. off-state voltage: 3.3V Semiconductor structure: unidirectional Max. forward impulse current: 3A Breakdown voltage: 5.32...5.88V Leakage current: 0.3µA Version: ESD Peak pulse power dissipation: 30W Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PESD3V3L2UM,315 | NEXPERIA |
![]() Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883; ESD Type of diode: TVS Case: SOT883 Max. off-state voltage: 3.3V Semiconductor structure: unidirectional Max. forward impulse current: 3A Breakdown voltage: 5.32...5.88V Leakage current: 0.3µA Version: ESD Peak pulse power dissipation: 30W Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PESD3V3S2UQ,115 | NEXPERIA |
![]() Description: Diode: TVS array; 5.2÷6V; 15A; 150W; common anode; SOT663; Ch: 2; ESD Type of diode: TVS array Case: SOT663 Capacitance: 275pF Max. off-state voltage: 3.3V Semiconductor structure: common anode Max. forward impulse current: 15A Breakdown voltage: 5.2...6V Leakage current: 3µA Number of channels: 2 Version: ESD Peak pulse power dissipation: 0.15kW Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PESD3V3S2UAT,215 | NEXPERIA |
![]() Description: Diode: TVS array; 5.2÷6V; 18A; 330W; common cathode; SOT23; Ch: 2 Type of diode: TVS array Case: SOT23 Capacitance: 300pF Max. off-state voltage: 3.3V Semiconductor structure: common cathode Max. forward impulse current: 18A Breakdown voltage: 5.2...6V Leakage current: 2µA Number of channels: 2 Version: ESD Peak pulse power dissipation: 330W Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PESD3V3X1BL,315 | NEXPERIA |
![]() Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882; ESD Type of diode: TVS Case: DFN1006-2; SOD882 Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Breakdown voltage: 5...7.8V Leakage current: 0.1µA Version: ESD Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD3V3Z1BCSFYL | NEXPERIA |
![]() Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2; ESD Type of diode: TVS Case: DSN0603-2; SOD962-2 Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Max. forward impulse current: 15A Breakdown voltage: 6.8V Leakage current: 50nA Version: ESD Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PESD3V3L1UB,115 | NEXPERIA |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 24000 шт: термін постачання 21-30 дні (днів) |
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PESD3V3Z1BSFYL | NEXPERIA |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 27000 шт: термін постачання 21-30 дні (днів) |
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PESD3V3F2UTR | NEXPERIA |
![]() Description: Diode: TVS array Type of diode: TVS array |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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PESD5V0U2BM,315 | NEXPERIA |
![]() Description: PESD5V0U2BM,315 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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PESD5V0F1BL-QYL | NEXPERIA |
![]() Description: PESD5V0F1BL-QYL |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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PMEG4010CEGW-QX | NEXPERIA |
![]() Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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PMEG4010ER-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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PMEG4010ETR,115 | NEXPERIA |
![]() Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PUMX2,115 | NEXPERIA |
![]() Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC88,SOT363,TSSOP6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz |
на замовлення 459 шт: термін постачання 21-30 дні (днів) |
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74HC163PW,112 | NEXPERIA |
![]() Description: IC: digital; 4bit,binary counter,synchronous,synchronous reset Case: TSSOP16 Supply voltage: 2...6V DC Type of integrated circuit: digital Kind of package: tube Kind of integrated circuit: 4bit; binary counter; synchronous; synchronous reset Family: HC Technology: CMOS Mounting: SMD Operating temperature: -40...125°C |
на замовлення 6728 шт: термін постачання 21-30 дні (днів) |
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74HCT164BQ,115 | NEXPERIA |
![]() Description: IC: digital; 8bit,shift register,serial input,parallel out Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel out; serial input; shift register Technology: CMOS Mounting: SMD Case: DHVQFN14 Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: HCT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1PS70SB82,115 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 15V; 30mA; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 15V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.7V Kind of package: reel; tape |
на замовлення 1186 шт: термін постачання 21-30 дні (днів) |
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74HCT10D,653 | NEXPERIA |
![]() Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT Type of integrated circuit: digital Kind of gate: NAND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: HCT |
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74HCT107D,653 | NEXPERIA |
![]() Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; reel,tape; HCT Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: reel; tape Trigger: negative-edge-triggered Technology: CMOS; TTL Kind of integrated circuit: JK flip-flop Operating temperature: -40...125°C |
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74HCT109D,653 | NEXPERIA |
![]() Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; SO16; reel,tape; HCT Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: SO16 Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: reel; tape Trigger: negative-edge-triggered Technology: CMOS; TTL Kind of integrated circuit: JK flip-flop Operating temperature: -40...125°C |
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74HCT109PW,118 | NEXPERIA |
![]() Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP16; reel,tape Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: TSSOP16 Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: reel; tape Trigger: negative-edge-triggered Technology: CMOS; TTL Kind of integrated circuit: JK flip-flop Operating temperature: -40...125°C |
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74HCT10PW,118 | NEXPERIA |
![]() Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Family: HCT Delay time: 36ns Kind of package: reel; tape Quiescent current: 40µA Technology: CMOS; TTL Operating temperature: -40...125°C |
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BCW32,215 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 100MHz |
на замовлення 2648 шт: термін постачання 21-30 дні (днів) |
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NHDTC114ETR | NEXPERIA |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 36000 шт: термін постачання 21-30 дні (днів) |
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74LVC2G04GW-Q100H |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 155500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.60 грн |
74HCT03PW,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Delay time: 36ns
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS; TTL
Operating temperature: -40...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Delay time: 36ns
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS; TTL
Operating temperature: -40...125°C
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TDZ20J,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Power dissipation: 0.5W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Max. load current: 0.25A
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Zener voltage: 20V
Leakage current: 50nA
Type of diode: Zener
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Power dissipation: 0.5W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Max. load current: 0.25A
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Zener voltage: 20V
Leakage current: 50nA
Type of diode: Zener
Tolerance: ±2%
на замовлення 1239 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.41 грн |
29+ | 13.23 грн |
100+ | 5.81 грн |
370+ | 2.42 грн |
1017+ | 2.29 грн |
74AVC20T245DGG,118 |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 20bit,3-state,transceiver,translator; Ch: 2; SMD
Type of integrated circuit: digital
Case: TSSOP56
Mounting: SMD
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 20bit; transceiver; translator
Family: AVC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Number of channels: 2
Kind of output: 3-state
Category: Level translators
Description: IC: digital; 20bit,3-state,transceiver,translator; Ch: 2; SMD
Type of integrated circuit: digital
Case: TSSOP56
Mounting: SMD
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 20bit; transceiver; translator
Family: AVC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Number of channels: 2
Kind of output: 3-state
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PBSS5350D,115 |
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на замовлення 9000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.90 грн |
BAS516,315 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
на замовлення 40000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8000+ | 1.29 грн |
BAS516,135 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
на замовлення 40000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.29 грн |
RB520S30,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Case: SC79; SOD523
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Case: SC79; SOD523
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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RB521CS30L,315 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 30V; 0.1A
Case: DFN1006-2; SOD882
Capacitance: 8pF
Max. off-state voltage: 30V
Max. forward voltage: 0.405V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 3A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 30V; 0.1A
Case: DFN1006-2; SOD882
Capacitance: 8pF
Max. off-state voltage: 30V
Max. forward voltage: 0.405V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 3A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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RB521S30,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
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74LVC86AD,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 1.2÷3.6VDC; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Delay time: 11.4ns
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 1.2÷3.6VDC; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Delay time: 11.4ns
Quiescent current: 40µA
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74LVC86ABQ,115 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Delay time: 11.4ns
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Delay time: 11.4ns
Quiescent current: 40µA
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BZX84-C2V4-QR |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
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74HC595PW-Q100,118 |
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Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital
Type of integrated circuit: digital
Category: Shift registers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 9.06 грн |
PDTD113ZUX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 300mW; SC70,SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 225MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 300mW; SC70,SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 225MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
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PDTA113ZU,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 35
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 35
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MMBZ6V8AL,215 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Peak pulse power dissipation: 40W
Leakage current: 10nA
Number of channels: 2
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Peak pulse power dissipation: 40W
Leakage current: 10nA
Number of channels: 2
Version: ESD
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MMBZ5V6AL,215 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 5.6V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Leakage current: 240nA
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 5.6V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Leakage current: 240nA
Version: ESD
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PMEG2020AEA,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. forward impulse current: 9A
Leakage current: 0.2mA
Capacitance: 70pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. forward impulse current: 9A
Leakage current: 0.2mA
Capacitance: 70pF
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PMEG2020EH,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. load current: 7A
Max. forward impulse current: 9A
Capacitance: 60pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. load current: 7A
Max. forward impulse current: 9A
Capacitance: 60pF
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PMEG2020EJ,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Capacitance: 60pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Capacitance: 60pF
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PMEG2020EJF |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
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PTVS24VS1UTR,115 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
на замовлення 3285 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.82 грн |
22+ | 17.97 грн |
100+ | 12.46 грн |
114+ | 7.87 грн |
313+ | 7.42 грн |
1N4730A,113 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; 234mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1mA
Max. forward voltage: 1.2V
Zener current: 234mA
Kind of package: reel; tape
Max. load current: 0.5A
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; 234mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1mA
Max. forward voltage: 1.2V
Zener current: 234mA
Kind of package: reel; tape
Max. load current: 0.5A
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1N4730A,133 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; 234mA; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1.2V
Zener current: 234mA
Kind of package: Ammo Pack
Max. load current: 0.5A
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; 234mA; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1.2V
Zener current: 234mA
Kind of package: Ammo Pack
Max. load current: 0.5A
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PESD5V0L5UY,125 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6; ESD
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Leakage current: 25nA
Version: ESD
Peak pulse power dissipation: 25W
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6; ESD
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Leakage current: 25nA
Version: ESD
Peak pulse power dissipation: 25W
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PESD5V0S1USF,315 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 35W; 6÷8V; unidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6...8V
Semiconductor structure: unidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
Peak pulse power dissipation: 35W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 35W; 6÷8V; unidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6...8V
Semiconductor structure: unidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
Peak pulse power dissipation: 35W
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PESD5V0U4BF,115 |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷9.5V; bidirectional; SOT886; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: SOT886
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷9.5V; bidirectional; SOT886; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: SOT886
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
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PESD5V0X1BCAL,315 |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 8.1÷12.3V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 8.1...12.3V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 8.1÷12.3V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 8.1...12.3V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
Version: ESD
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74HCT1G04GW,125 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: Mini Logic
на замовлення 71 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
27+ | 14.53 грн |
32+ | 12.23 грн |
50+ | 8.21 грн |
PESD3V3S4UD,115 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 200W; SC74,SOT457,TSOP6; ESD
Type of diode: TVS array
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; quadruple; unidirectional
Breakdown voltage: 5.6V
Leakage current: 0.8µA
Version: ESD
Peak pulse power dissipation: 0.2kW
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 200W; SC74,SOT457,TSOP6; ESD
Type of diode: TVS array
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; quadruple; unidirectional
Breakdown voltage: 5.6V
Leakage current: 0.8µA
Version: ESD
Peak pulse power dissipation: 0.2kW
Mounting: SMD
на замовлення 923 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.67 грн |
23+ | 17.28 грн |
98+ | 9.17 грн |
269+ | 8.64 грн |
500+ | 8.33 грн |
PESD3V3L4UW,115 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3.5A; SOT665; ESD
Type of diode: TVS array
Case: SOT665
Capacitance: 28pF
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; quadruple; unidirectional
Max. forward impulse current: 3.5A
Breakdown voltage: 5.6V
Leakage current: 0.3µA
Version: ESD
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3.5A; SOT665; ESD
Type of diode: TVS array
Case: SOT665
Capacitance: 28pF
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; quadruple; unidirectional
Max. forward impulse current: 3.5A
Breakdown voltage: 5.6V
Leakage current: 0.3µA
Version: ESD
Mounting: SMD
на замовлення 2711 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.29 грн |
34+ | 11.39 грн |
45+ | 8.65 грн |
100+ | 5.64 грн |
205+ | 4.37 грн |
563+ | 4.14 грн |
1000+ | 3.98 грн |
PESD3V3V1BLYL |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Breakdown voltage: 4.5V
Leakage current: 10nA
Version: ESD
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Breakdown voltage: 4.5V
Leakage current: 10nA
Version: ESD
Mounting: SMD
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PESD3V3L1UL,315 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 4.5A
Breakdown voltage: 5.3...6V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 45W
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 4.5A
Breakdown voltage: 5.3...6V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 45W
Mounting: SMD
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PESD3V3X1BCSFYL |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Case: DSN0603-2; SOD962-2
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 8A
Breakdown voltage: 10V
Leakage current: 0.1µA
Version: ESD
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Case: DSN0603-2; SOD962-2
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 8A
Breakdown voltage: 10V
Leakage current: 0.1µA
Version: ESD
Mounting: SMD
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PESD3V3L4UF,115 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886; ESD
Type of diode: TVS
Case: SOT886
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 5.32...5.88V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 30W
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886; ESD
Type of diode: TVS
Case: SOT886
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 5.32...5.88V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 30W
Mounting: SMD
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PESD3V3L2UM,315 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883; ESD
Type of diode: TVS
Case: SOT883
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 5.32...5.88V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 30W
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883; ESD
Type of diode: TVS
Case: SOT883
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 5.32...5.88V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 30W
Mounting: SMD
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PESD3V3S2UQ,115 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 15A; 150W; common anode; SOT663; Ch: 2; ESD
Type of diode: TVS array
Case: SOT663
Capacitance: 275pF
Max. off-state voltage: 3.3V
Semiconductor structure: common anode
Max. forward impulse current: 15A
Breakdown voltage: 5.2...6V
Leakage current: 3µA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 0.15kW
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 15A; 150W; common anode; SOT663; Ch: 2; ESD
Type of diode: TVS array
Case: SOT663
Capacitance: 275pF
Max. off-state voltage: 3.3V
Semiconductor structure: common anode
Max. forward impulse current: 15A
Breakdown voltage: 5.2...6V
Leakage current: 3µA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 0.15kW
Mounting: SMD
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PESD3V3S2UAT,215 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 18A; 330W; common cathode; SOT23; Ch: 2
Type of diode: TVS array
Case: SOT23
Capacitance: 300pF
Max. off-state voltage: 3.3V
Semiconductor structure: common cathode
Max. forward impulse current: 18A
Breakdown voltage: 5.2...6V
Leakage current: 2µA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 330W
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 18A; 330W; common cathode; SOT23; Ch: 2
Type of diode: TVS array
Case: SOT23
Capacitance: 300pF
Max. off-state voltage: 3.3V
Semiconductor structure: common cathode
Max. forward impulse current: 18A
Breakdown voltage: 5.2...6V
Leakage current: 2µA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 330W
Mounting: SMD
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PESD3V3X1BL,315 |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Breakdown voltage: 5...7.8V
Leakage current: 0.1µA
Version: ESD
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Breakdown voltage: 5...7.8V
Leakage current: 0.1µA
Version: ESD
Mounting: SMD
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PESD3V3Z1BCSFYL |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Case: DSN0603-2; SOD962-2
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 15A
Breakdown voltage: 6.8V
Leakage current: 50nA
Version: ESD
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Case: DSN0603-2; SOD962-2
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 15A
Breakdown voltage: 6.8V
Leakage current: 50nA
Version: ESD
Mounting: SMD
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PESD3V3L1UB,115 |
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на замовлення 24000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.09 грн |
PESD3V3Z1BSFYL |
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на замовлення 27000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9000+ | 2.28 грн |
PESD3V3F2UTR |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.35 грн |
PESD5V0U2BM,315 |
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на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 4.32 грн |
PESD5V0F1BL-QYL |
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на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 4.52 грн |
PMEG4010CEGW-QX |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.98 грн |
PMEG4010ER-QX |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.52 грн |
PMEG4010ETR,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.70 грн |
PUMX2,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
на замовлення 459 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 4.45 грн |
180+ | 2.13 грн |
230+ | 1.70 грн |
74HC163PW,112 |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous,synchronous reset
Case: TSSOP16
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Kind of package: tube
Kind of integrated circuit: 4bit; binary counter; synchronous; synchronous reset
Family: HC
Technology: CMOS
Mounting: SMD
Operating temperature: -40...125°C
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous,synchronous reset
Case: TSSOP16
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Kind of package: tube
Kind of integrated circuit: 4bit; binary counter; synchronous; synchronous reset
Family: HC
Technology: CMOS
Mounting: SMD
Operating temperature: -40...125°C
на замовлення 6728 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.40 грн |
30+ | 13.00 грн |
35+ | 11.16 грн |
96+ | 9.63 грн |
132+ | 6.80 грн |
363+ | 6.42 грн |
74HCT164BQ,115 |
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Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Technology: CMOS
Mounting: SMD
Case: DHVQFN14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Technology: CMOS
Mounting: SMD
Case: DHVQFN14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
товару немає в наявності
В кошику
од. на суму грн.
1PS70SB82,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 15V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 15V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 15V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 15V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
на замовлення 1186 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
61+ | 6.83 грн |
64+ | 6.04 грн |
100+ | 5.81 грн |
407+ | 5.73 грн |
500+ | 5.50 грн |
74HCT10D,653 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
товару немає в наявності
В кошику
од. на суму грн.
74HCT107D,653 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; reel,tape; HCT
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Trigger: negative-edge-triggered
Technology: CMOS; TTL
Kind of integrated circuit: JK flip-flop
Operating temperature: -40...125°C
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; reel,tape; HCT
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Trigger: negative-edge-triggered
Technology: CMOS; TTL
Kind of integrated circuit: JK flip-flop
Operating temperature: -40...125°C
товару немає в наявності
В кошику
од. на суму грн.
74HCT109D,653 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; SO16; reel,tape; HCT
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Trigger: negative-edge-triggered
Technology: CMOS; TTL
Kind of integrated circuit: JK flip-flop
Operating temperature: -40...125°C
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; SO16; reel,tape; HCT
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Trigger: negative-edge-triggered
Technology: CMOS; TTL
Kind of integrated circuit: JK flip-flop
Operating temperature: -40...125°C
товару немає в наявності
В кошику
од. на суму грн.
74HCT109PW,118 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP16; reel,tape
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Trigger: negative-edge-triggered
Technology: CMOS; TTL
Kind of integrated circuit: JK flip-flop
Operating temperature: -40...125°C
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP16; reel,tape
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Trigger: negative-edge-triggered
Technology: CMOS; TTL
Kind of integrated circuit: JK flip-flop
Operating temperature: -40...125°C
товару немає в наявності
В кошику
од. на суму грн.
74HCT10PW,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Delay time: 36ns
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS; TTL
Operating temperature: -40...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Delay time: 36ns
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS; TTL
Operating temperature: -40...125°C
товару немає в наявності
В кошику
од. на суму грн.
BCW32,215 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
на замовлення 2648 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.17 грн |
49+ | 7.95 грн |
59+ | 6.50 грн |
92+ | 4.19 грн |
109+ | 3.52 грн |
555+ | 1.61 грн |
1525+ | 1.53 грн |
NHDTC114ETR |
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на замовлення 36000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.97 грн |