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PDTA123YE,115 PDTA123YE,115 NXP USA Inc. PDTA123Y_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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PDTA123YK,115 PDTA123YK,115 NXP USA Inc. PDTA123Y_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTA123YS,126 PDTA123YS,126 NXP USA Inc. PDTA123Y_SER.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTA124TS,126 PDTA124TS,126 NXP USA Inc. PDTA124T_SERIES.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 22 kOhms
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PDTA124XS,126 PDTA124XS,126 NXP USA Inc. PDTA124X_SER.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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PDTA143TS,126 PDTA143TS,126 NXP USA Inc. PDTA143T_SERIES.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
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PDTA143XS,126 PDTA143XS,126 NXP USA Inc. PDTA143X_SER.pdf Description: TRANS PREBIAS PNP 500MW TO92-3
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PDTA143ZS,126 PDTA143ZS,126 NXP USA Inc. PDTA143Z_Series_Rev2009.pdf Description: TRANS PREBIAS PNP 500MW TO92-3
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PDTA144TS,126 PDTA144TS,126 NXP USA Inc. PDTA144T_SERIES.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
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PDTA144VE,115 PDTA144VE,115 NXP USA Inc. PDTA144V_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTA144VK,115 PDTA144VK,115 NXP USA Inc. PDTA144V_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTA144VS,126 PDTA144VS,126 NXP USA Inc. PDTA144V_SER.pdf Description: TRANS PREBIAS PNP 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTA144WS,126 PDTA144WS,126 NXP USA Inc. PDTA144W_SERIES.pdf Description: TRANS PREBIAS PNP 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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PDTB113EK,115 PDTB113EK,115 NXP USA Inc. PDTB113E.pdf Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
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PDTB113ZK,115 PDTB113ZK,115 NXP USA Inc. PDTB113Z.pdf Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTB123EK,115 PDTB123EK,115 NXP USA Inc. PDTB123E.pdf Description: TRANS PREBIAS PNP 250MW SMT3
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PDTB123YK,115 PDTB123YK,115 NXP USA Inc. PDTB123Y.pdf Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTC114YS,126 PDTC114YS,126 NXP USA Inc. PHGLS24123-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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PDTC115ES,126 PDTC115ES,126 NXP USA Inc. PDTC115E_SERIES.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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PDTC115TS,126 PDTC115TS,126 NXP USA Inc. PDTC115T_SER.pdf Description: TRANS PREBIAS NPN 500MW TO92-3
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PDTC123ES,126 PDTC123ES,126 NXP USA Inc. PDTC123E_SERIES.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
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PDTC123JS,126 PDTC123JS,126 NXP USA Inc. PDTC123J%20Series.pdf Description: TRANS PREBIAS NPN 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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PDTC123YE,115 PDTC123YE,115 NXP USA Inc. PDTC123Y_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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PDTC123YK,115 PDTC123YK,115 NXP USA Inc. PDTC123Y_SER.pdf Description: TRANS PREBIAS NPN 250MW SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTC123YS,126 PDTC123YS,126 NXP USA Inc. PDTC123Y_SER.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTC124TS,126 PDTC124TS,126 NXP USA Inc. PDTC124T_SERIES.pdf Description: TRANS PREBIAS NPN 500MW TO92-3
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PDTC124XS,126 PDTC124XS,126 NXP USA Inc. PDTC124X_SER.pdf Description: TRANS PREBIAS NPN 500MW TO92-3
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PDTC143TS,126 PDTC143TS,126 NXP USA Inc. PDTC143T_SERIES.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
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PDTC143XS,126 PDTC143XS,126 NXP USA Inc. PDTC143X_SER.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTC143ZS,126 PDTC143ZS,126 NXP USA Inc. PDTC143Z_SERIES_7.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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PDTC144TS,126 PDTC144TS,126 NXP USA Inc. PDTC144T_SERIES.pdf Description: TRANS PREBIAS NPN 500MW TO92-3
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PDTC144VE,115 PDTC144VE,115 NXP USA Inc. PDTC144V_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTC144VK,115 PDTC144VK,115 NXP USA Inc. PDTC144V_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTC144VS,126 PDTC144VS,126 NXP USA Inc. PDTC144V_SER.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PH4025L,115 PH4025L,115 NXP USA Inc. PH4025L.pdf Description: MOSFET N-CH 25V 99A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 46.4W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2601 pF @ 12 V
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PH4830L,115 PH4830L,115 NXP USA Inc. PH4830L.pdf Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2786 pF @ 12 V
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PH9025L,115 PH9025L,115 NXP USA Inc. PH9025L.pdf Description: MOSFET N-CH 25V 66A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 30 V
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PH9930L,115 PH9930L,115 NXP USA Inc. PH9930L.pdf Description: MOSFET N-CH 30V 63A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 12 V
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PHB119NQ06T,118 PHB119NQ06T,118 NXP USA Inc. PHB119NQ06T.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 25 V
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PHB23NQ10LT,118 PHB23NQ10LT,118 NXP USA Inc. PHB23NQ10LT.pdf Description: MOSFET N-CH 100V 23A D2PAK
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PMD4001K,115 PMD4001K,115 NXP USA Inc. PMD4001K_1.pdf Description: IC MOSFET DRIVER SC-59A
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PMD4002K,115 PMD4002K,115 NXP USA Inc. PMD4002K_1.pdf Description: IC MOSFET DRIVER SC-59A
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PMD4003K,115 PMD4003K,115 NXP USA Inc. PMD4003K_1.pdf Description: IC MOSFET DRIVER SC-59A
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PMD5001K,115 PMD5001K,115 NXP USA Inc. PMD5001K_1.pdf Description: IC MOSFET DRIVER SC-59A
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PMD5002K,115 PMD5002K,115 NXP USA Inc. PMD5002K_1.pdf Description: IC MOSFET DRIVER SC-59A
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PMD5003K,115 PMD5003K,115 NXP USA Inc. PMD5003K_1.pdf Description: IC MOSFET DRIVER SC-59A
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PMD9001D,115 PMD9001D,115 NXP USA Inc. PMD9001D.pdf Description: IC MOSFET DRIVER 6TSOP
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PMD9003D,115 PMD9003D,115 NXP USA Inc. PMD9003D.pdf Description: IC MOSFET DRIVER 6TSOP
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V NPN, 45V NPN
Package / Case: SC-74, SOT-457
Current Rating (Amps): 100mA NPN, 100mA NPN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Totem Pole)
Applications: MOSFET Driver
Supplier Device Package: SC-74
Part Status: Obsolete
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PMD9010D,115 PMD9010D,115 NXP USA Inc. PMD9010D.pdf Description: IC MOSFET DRIVER 6TSOP
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PMD9050D,115 PMD9050D,115 NXP USA Inc. PMD9050D.pdf Description: IC MOSFET DRIVER 6TSOP
Packaging: Tape & Reel (TR)
Voltage - Rated: 45V
Package / Case: SC-74, SOT-457
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, PNP
Applications: MOSFET Driver
Supplier Device Package: SC-74
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PMEG2010AEK,115 PMEG2010AEK,115 NXP USA Inc. PMEG2010AEK.pdf Description: DIODE SCHOTTK 20V 1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
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PNX1301EH,557 PNX1301EH,557 NXP USA Inc. PNX1300 Series.pdf Description: IC MEDIA PROC 180MHZ 292-HBGA
Packaging: Tray
Package / Case: 292-HBGA
Mounting Type: Surface Mount
Interface: I²C, 2-Wire Serial
RAM Size: 48K x 8
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Controller Series: Nexperia
Applications: Multimedia
Core Processor: TriMedia™
Supplier Device Package: 292-BGA
Number of I/O: 169
DigiKey Programmable: Not Verified
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PNX1302EH,557 PNX1302EH,557 NXP USA Inc. PNX1300%20Series.pdf Description: IC MEDIA PROC 200MHZ 292-HBGA
Packaging: Tray
Package / Case: 292-HBGA
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
RAM Size: 48K x 8
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Controller Series: Nexperia
Applications: Multimedia
Core Processor: TriMedia™
Supplier Device Package: 292-BGA
Number of I/O: 169
DigiKey Programmable: Not Verified
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PNX1501E,557 PNX1501E,557 NXP USA Inc. PNX15xx%20Series.pdf Description: IC MEDIA PROC 266MHZ 456-BGA
Packaging: Tray
Package / Case: 456-BGA
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.26V
Controller Series: Nexperia
Applications: Multimedia
Core Processor: TM3260
Supplier Device Package: 456-BGA (27x27)
Part Status: Obsolete
Number of I/O: 61
DigiKey Programmable: Not Verified
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PNX1502E,557 PNX1502E,557 NXP USA Inc. PNX15xx%20Series.pdf Description: IC MEDIA PROC 300MHZ 456-BGA
Packaging: Tray
Package / Case: 456-BGA
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.23V ~ 1.37V
Controller Series: Nexperia
Applications: Multimedia
Core Processor: TM3260
Supplier Device Package: 456-BGA (27x27)
Part Status: Obsolete
Number of I/O: 61
DigiKey Programmable: Not Verified
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PRTR5V0U4AD,125 PRTR5V0U4AD,125 NXP USA Inc. Description: TVS DIODE 5.5VWM SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Obsolete
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PTN3700EV/G,118 PTN3700EV/G,118 NXP USA Inc. PTN3700.pdf Description: IC VIDEO INTERFACE 56VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Voltage - Supply: 1.65V ~ 1.95V
Applications: Video Display
Supplier Device Package: 56-VFBGA (4x4.5)
Part Status: Obsolete
Control Interface: Serial
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PVR100AZ-B12V,115 PVR100AZ-B12V,115 NXP USA Inc. PVR100AZ-B_Series.pdf Description: TRANS NPN 45V 0.1A SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN + Zener
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Supplier Device Package: SC-73
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 550 mW
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PVR100AZ-B2V5,115 PVR100AZ-B2V5,115 NXP USA Inc. PVR100AZ-B_Series.pdf Description: TRANS NPN 45V 0.1A SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN + Zener
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Supplier Device Package: SC-73
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 550 mW
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PVR100AZ-B3V0,115 PVR100AZ-B3V0,115 NXP USA Inc. PVR100AZ-B_Series.pdf Description: TRANS NPN 45V 0.1A SC73
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PDTA123YE,115 PDTA123Y_SER.pdf
PDTA123YE,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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PDTA123YK,115 PDTA123Y_SER.pdf
PDTA123YK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTA123YS,126 PDTA123Y_SER.pdf
PDTA123YS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTA124TS,126 PDTA124T_SERIES.pdf
PDTA124TS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 22 kOhms
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PDTA124XS,126 PDTA124X_SER.pdf
PDTA124XS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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PDTA143TS,126 PDTA143T_SERIES.pdf
PDTA143TS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
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PDTA143XS,126 PDTA143X_SER.pdf
PDTA143XS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 500MW TO92-3
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PDTA143ZS,126 PDTA143Z_Series_Rev2009.pdf
PDTA143ZS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 500MW TO92-3
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PDTA144TS,126 PDTA144T_SERIES.pdf
PDTA144TS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
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PDTA144VE,115 PDTA144V_SER.pdf
PDTA144VE,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTA144VK,115 PDTA144V_SER.pdf
PDTA144VK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTA144VS,126 PDTA144V_SER.pdf
PDTA144VS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTA144WS,126 PDTA144W_SERIES.pdf
PDTA144WS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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PDTB113EK,115 PDTB113E.pdf
PDTB113EK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
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PDTB113ZK,115 PDTB113Z.pdf
PDTB113ZK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTB123EK,115 PDTB123E.pdf
PDTB123EK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 250MW SMT3
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PDTB123YK,115 PDTB123Y.pdf
PDTB123YK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTC114YS,126 PHGLS24123-1.pdf?t.download=true&u=5oefqw
PDTC114YS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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PDTC115ES,126 PDTC115E_SERIES.pdf
PDTC115ES,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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PDTC115TS,126 PDTC115T_SER.pdf
PDTC115TS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 500MW TO92-3
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PDTC123ES,126 PDTC123E_SERIES.pdf
PDTC123ES,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
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PDTC123JS,126 PDTC123J%20Series.pdf
PDTC123JS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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PDTC123YE,115 PDTC123Y_SER.pdf
PDTC123YE,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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В кошику  од. на суму  грн.
PDTC123YK,115 PDTC123Y_SER.pdf
PDTC123YK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 250MW SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTC123YS,126 PDTC123Y_SER.pdf
PDTC123YS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTC124TS,126 PDTC124T_SERIES.pdf
PDTC124TS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 500MW TO92-3
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PDTC124XS,126 PDTC124X_SER.pdf
PDTC124XS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 500MW TO92-3
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PDTC143TS,126 PDTC143T_SERIES.pdf
PDTC143TS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
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PDTC143XS,126 PDTC143X_SER.pdf
PDTC143XS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTC143ZS,126 PDTC143Z_SERIES_7.pdf
PDTC143ZS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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PDTC144TS,126 PDTC144T_SERIES.pdf
PDTC144TS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 500MW TO92-3
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PDTC144VE,115 PDTC144V_SER.pdf
PDTC144VE,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PDTC144VK,115 PDTC144V_SER.pdf
PDTC144VK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
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PDTC144VS,126 PDTC144V_SER.pdf
PDTC144VS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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PH4025L,115 PH4025L.pdf
PH4025L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 99A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 46.4W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2601 pF @ 12 V
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PH4830L,115 PH4830L.pdf
PH4830L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2786 pF @ 12 V
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PH9025L,115 PH9025L.pdf
PH9025L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 66A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 30 V
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PH9930L,115 PH9930L.pdf
PH9930L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 63A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 12 V
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PHB119NQ06T,118 PHB119NQ06T.pdf
PHB119NQ06T,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 25 V
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PHB23NQ10LT,118 PHB23NQ10LT.pdf
PHB23NQ10LT,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 23A D2PAK
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PMD4001K,115 PMD4001K_1.pdf
PMD4001K,115
Виробник: NXP USA Inc.
Description: IC MOSFET DRIVER SC-59A
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PMD4002K,115 PMD4002K_1.pdf
PMD4002K,115
Виробник: NXP USA Inc.
Description: IC MOSFET DRIVER SC-59A
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PMD4003K,115 PMD4003K_1.pdf
PMD4003K,115
Виробник: NXP USA Inc.
Description: IC MOSFET DRIVER SC-59A
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PMD5001K,115 PMD5001K_1.pdf
PMD5001K,115
Виробник: NXP USA Inc.
Description: IC MOSFET DRIVER SC-59A
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PMD5002K,115 PMD5002K_1.pdf
PMD5002K,115
Виробник: NXP USA Inc.
Description: IC MOSFET DRIVER SC-59A
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PMD5003K,115 PMD5003K_1.pdf
PMD5003K,115
Виробник: NXP USA Inc.
Description: IC MOSFET DRIVER SC-59A
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PMD9001D,115 PMD9001D.pdf
PMD9001D,115
Виробник: NXP USA Inc.
Description: IC MOSFET DRIVER 6TSOP
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PMD9003D,115 PMD9003D.pdf
PMD9003D,115
Виробник: NXP USA Inc.
Description: IC MOSFET DRIVER 6TSOP
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V NPN, 45V NPN
Package / Case: SC-74, SOT-457
Current Rating (Amps): 100mA NPN, 100mA NPN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Totem Pole)
Applications: MOSFET Driver
Supplier Device Package: SC-74
Part Status: Obsolete
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PMD9010D,115 PMD9010D.pdf
PMD9010D,115
Виробник: NXP USA Inc.
Description: IC MOSFET DRIVER 6TSOP
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PMD9050D,115 PMD9050D.pdf
PMD9050D,115
Виробник: NXP USA Inc.
Description: IC MOSFET DRIVER 6TSOP
Packaging: Tape & Reel (TR)
Voltage - Rated: 45V
Package / Case: SC-74, SOT-457
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, PNP
Applications: MOSFET Driver
Supplier Device Package: SC-74
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PMEG2010AEK,115 PMEG2010AEK.pdf
PMEG2010AEK,115
Виробник: NXP USA Inc.
Description: DIODE SCHOTTK 20V 1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
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PNX1301EH,557 PNX1300 Series.pdf
PNX1301EH,557
Виробник: NXP USA Inc.
Description: IC MEDIA PROC 180MHZ 292-HBGA
Packaging: Tray
Package / Case: 292-HBGA
Mounting Type: Surface Mount
Interface: I²C, 2-Wire Serial
RAM Size: 48K x 8
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Controller Series: Nexperia
Applications: Multimedia
Core Processor: TriMedia™
Supplier Device Package: 292-BGA
Number of I/O: 169
DigiKey Programmable: Not Verified
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PNX1302EH,557 PNX1300%20Series.pdf
PNX1302EH,557
Виробник: NXP USA Inc.
Description: IC MEDIA PROC 200MHZ 292-HBGA
Packaging: Tray
Package / Case: 292-HBGA
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
RAM Size: 48K x 8
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Controller Series: Nexperia
Applications: Multimedia
Core Processor: TriMedia™
Supplier Device Package: 292-BGA
Number of I/O: 169
DigiKey Programmable: Not Verified
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PNX1501E,557 PNX15xx%20Series.pdf
PNX1501E,557
Виробник: NXP USA Inc.
Description: IC MEDIA PROC 266MHZ 456-BGA
Packaging: Tray
Package / Case: 456-BGA
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.26V
Controller Series: Nexperia
Applications: Multimedia
Core Processor: TM3260
Supplier Device Package: 456-BGA (27x27)
Part Status: Obsolete
Number of I/O: 61
DigiKey Programmable: Not Verified
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PNX1502E,557 PNX15xx%20Series.pdf
PNX1502E,557
Виробник: NXP USA Inc.
Description: IC MEDIA PROC 300MHZ 456-BGA
Packaging: Tray
Package / Case: 456-BGA
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.23V ~ 1.37V
Controller Series: Nexperia
Applications: Multimedia
Core Processor: TM3260
Supplier Device Package: 456-BGA (27x27)
Part Status: Obsolete
Number of I/O: 61
DigiKey Programmable: Not Verified
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PRTR5V0U4AD,125
PRTR5V0U4AD,125
Виробник: NXP USA Inc.
Description: TVS DIODE 5.5VWM SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Obsolete
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PTN3700EV/G,118 PTN3700.pdf
PTN3700EV/G,118
Виробник: NXP USA Inc.
Description: IC VIDEO INTERFACE 56VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Voltage - Supply: 1.65V ~ 1.95V
Applications: Video Display
Supplier Device Package: 56-VFBGA (4x4.5)
Part Status: Obsolete
Control Interface: Serial
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PVR100AZ-B12V,115 PVR100AZ-B_Series.pdf
PVR100AZ-B12V,115
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN + Zener
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Supplier Device Package: SC-73
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 550 mW
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PVR100AZ-B2V5,115 PVR100AZ-B_Series.pdf
PVR100AZ-B2V5,115
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN + Zener
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Supplier Device Package: SC-73
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 550 mW
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PVR100AZ-B3V0,115 PVR100AZ-B_Series.pdf
PVR100AZ-B3V0,115
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A SC73
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