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SC16IS752IPW-T SC16IS752IPW-T NXP USA Inc. SC16IS752%2C762.pdf Description: IC UART DUAL I2C/SPI 28-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 2mA
Protocol: RS232, RS485
Supplier Device Package: 28-TSSOP
DigiKey Programmable: Not Verified
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SC16IS760IBS,128 SC16IS760IBS,128 NXP USA Inc. SC16IS740_750_760.pdf Description: IC UART I2C/SPI 24-HVQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 6mA
Protocol: RS232, RS485
Supplier Device Package: 24-HVQFN (4x4)
DigiKey Programmable: Not Verified
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SC16IS760IPW-T SC16IS760IPW-T NXP USA Inc. SC16IS740%2C750%2C760.pdf Description: IC UART I2C/SPI 24-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 6mA
Protocol: RS232, RS485
Supplier Device Package: 24-TSSOP
DigiKey Programmable: Not Verified
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SC16IS762IBS-T SC16IS762IBS-T NXP USA Inc. SC16IS752%2C762.pdf Description: IC UART DUAL I2C/SPI 32-HVQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 2mA
Protocol: RS232, RS485
Supplier Device Package: 32-HVQFN (5x5)
DigiKey Programmable: Not Verified
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SC16IS762IPW-T SC16IS762IPW-T NXP USA Inc. SC16IS752%2C762.pdf Description: IC UART DUAL I2C/SPI 28-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 2mA
Protocol: RS232, RS485
Supplier Device Package: 28-TSSOP
DigiKey Programmable: Not Verified
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BGF844,127 BGF844,127 NXP USA Inc. BGF844_7.pdf Description: IC AMP GSM 869MHZ-894MHZ SOT365C
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BGF944,127 BGF944,127 NXP USA Inc. BGF944_7.pdf Description: IC AMP GSM 920MHZ-960MHZ SOT365C
Packaging: Tube
Package / Case: SOT-365C
Mounting Type: Chassis Mount
Frequency: 920MHz ~ 960MHz
RF Type: GSM, EDGE
Voltage - Supply: 30V
Gain: 30dB
Current - Supply: 280mA
Supplier Device Package: SOT-365C
Part Status: Obsolete
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BLF4G10LS-120,112 NXP USA Inc. BLF4G10LS-120.pdf Description: FET RF 65V 960MHZ SOT502B
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BLF4G20LS-110B,112 NXP USA Inc. BLF4G20LS-110B_1.pdf Description: FET RF 65V 1.99GHZ SOT502B
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BLF4G20S-110B,112 NXP USA Inc. BLF4G20-110B_4G20S-110B_1.pdf Description: FET RF 65V 1.99GHZ SOT502B
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BLF4G22S-100,112 NXP USA Inc. BLF4G22(S)-100.pdf Description: FET RF 65V 2.17GHZ SOT502B
Packaging: Tray
Package / Case: SOT-502B
Current Rating (Amps): 12A
Mounting Type: Chassis Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 25W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: SOT502B
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 900 mA
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PMF280UN,115 PMF280UN,115 NXP USA Inc. PMF280UN.pdf Description: MOSFET N-CH 20V 1.02A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Power Dissipation (Max): 560mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V
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PMF290XN,115 PMF290XN,115 NXP USA Inc. Description: MOSFET N-CH 20V 1A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 560mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 20 V
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PMF3800SN,115 PMF3800SN,115 NXP USA Inc. Description: MOSFET N-CH 60V 260MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 560mW (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 1mA
Supplier Device Package: SC-70
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
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PMF400UN,115 PMF400UN,115 NXP USA Inc. PMF400UN.pdf Description: MOSFET N-CH 30V 830MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
Power Dissipation (Max): 560mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
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PMF780SN,115 PMF780SN,115 NXP USA Inc. PMF780SN.pdf Description: MOSFET N-CH 60V 570MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 570mA (Ta)
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Power Dissipation (Max): 560mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
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PIP401,118 PIP401,118 NXP USA Inc. PIP401-03.pdf Description: IC OR CTRLR N+1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6.3V ~ 20V
Applications: CompactPCI™ High Reliability Power Supply Networks
Internal Switch(s): Yes
FET Type: N-Channel
Delay Time - ON: 7 µs
Delay Time - OFF: 200 ns
Current - Output (Max): 75A
Ratio - Input:Output: N:1
Supplier Device Package: D2PAK-7
Part Status: Obsolete
Current - Supply: 3 mA
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PIP202-12M-2,518 PIP202-12M-2,518 NXP USA Inc. PIP202-12M-2.pdf Description: IC HALF BRIDGE DRVR 25A 68HVQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 3.3V ~ 12V
Applications: Synchronous Buck Converters
Current - Output / Channel: 25A
Current - Peak Output: 200A
Technology: Power MOSFET
Voltage - Load: 25V (Max)
Supplier Device Package: 68-HVQFN (10x10)
Load Type: Inductive
Part Status: Obsolete
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PIP201-12M-3,518 PIP201-12M-3,518 NXP USA Inc. PIP201-12M.pdf Description: IC HALF BRIDGE DRVR 20A 68HVQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 12V
Applications: Synchronous Buck Converters
Current - Output / Channel: 20A
Current - Peak Output: 200A
Technology: Power MOSFET
Voltage - Load: 25V (Max)
Supplier Device Package: 68-HVQFN (10x10)
Load Type: Inductive
Part Status: Obsolete
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NE57810S,518 NE57810S,518 NXP USA Inc. NE57810.pdf Description: IC REG CONV DDR 1OUT 5SPAK
Packaging: Tape & Reel (TR)
Package / Case: SPak-5 (5 leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.6V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Applications: Converter, DDR
Supplier Device Package: 5-SPAK
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NE57811S,518 NE57811S,518 NXP USA Inc. NE57811.pdf Description: IC REG CONV DDR 1OUT 5SPAK
Packaging: Tape & Reel (TR)
Package / Case: SPak-5 (5 leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.6V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Applications: Converter, DDR
Supplier Device Package: 5-SPAK
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NE57814DD,518 NE57814DD,518 NXP USA Inc. NE57814.pdf Description: IC DDR TERM W/STANDBY 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.6V ~ 3.6V
Applications: Memory, DDR/DDR2 Regulator
Current - Supply: 14mA
Supplier Device Package: 8-HSO
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TEA1520T/N2,518 TEA1520T/N2,518 NXP USA Inc. TEA152X.pdf Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 145°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 10kHz ~ 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 40V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Voltage - Start Up: 9.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 30 W
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TEA1521T/N2,518 TEA1521T/N2,518 NXP USA Inc. TEA152X.pdf Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 145°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 10kHz ~ 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 40V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Voltage - Start Up: 9.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 30 W
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TEA1506T/N1,518 TEA1506T/N1,518 NXP USA Inc. TEA1506_TEA1506A.pdf Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 145°C (TJ)
Frequency - Switching: 25kHz ~ 175kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.7V ~ 20V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 11 V
Part Status: Obsolete
Power (Watts): 150 W
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TEA1507P/N1,112 TEA1507P/N1,112 NXP USA Inc. TEA1507.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 145°C (TJ)
Frequency - Switching: 6.5kHz ~ 175kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.7V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 11 V
Part Status: Obsolete
Power (Watts): 250 W
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TEA1532AT/N1,118 TEA1532AT/N1,118 NXP USA Inc. TEA1532.pdf Description: IC PFC CTRLR CCM 75KHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 70°C
Voltage - Supply: 8.7V ~ 20V
Frequency - Switching: 50kHz ~ 75kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SO
Part Status: Obsolete
Current - Startup: 1.2 mA
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TEA1533AT/N1,518 TEA1533AT/N1,518 NXP USA Inc. TEA1533T_AT.pdf Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 145°C (TJ)
Frequency - Switching: 25kHz ~ 175kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.7V ~ 20V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 11 V
Part Status: Obsolete
Power (Watts): 250 W
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TEA1552T/N1,518 TEA1552T/N1,518 NXP USA Inc. TEA1552.pdf Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 145°C (TJ)
Frequency - Switching: 25kHz ~ 125kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.7V ~ 20V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Short Circuit
Voltage - Start Up: 11 V
Power (Watts): 250 W
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TEA1610T/N5,118 TEA1610T/N5,118 NXP USA Inc. TEA1610T_P.pdf Description: IC RESONANT CONVRTR CTRLR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 70°C
Voltage - Supply: 0V ~ 15V
Applications: Resonant Converter Controller
Supplier Device Package: 16-SO
Part Status: Obsolete
Current - Supply: 2.4 mA
DigiKey Programmable: Not Verified
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PH3830L,115 PH3830L,115 NXP USA Inc. PH3830L.pdf Description: MOSFET N-CH 30V 98A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 10 V
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PH5330E,115 PH5330E,115 NXP USA Inc. Description: MOSFET N-CH 30V 80A LFPAK56
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PH7030L,115 PH7030L,115 NXP USA Inc. PH7030L.pdf Description: MOSFET N-CH 30V 68A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 10 V
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PMV30UN,215 PMV30UN,215 NXP USA Inc. PMV30UN.pdf Description: MOSFET N-CH 20V 5.7A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V
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PMV40UN,215 PMV40UN,215 NXP USA Inc. PMV40UN.pdf Description: MOSFET N-CH 30V 4.9A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 30 V
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PMV45EN,215 PMV45EN,215 NXP USA Inc. PMV45EN.pdf Description: MOSFET N-CH 30V 5.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 2A, 10V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
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PMV60EN,215 PMV60EN,215 NXP USA Inc. Description: MOSFET N-CH 30V 4.7A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
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PMWD15UN,518 PMWD15UN,518 NXP USA Inc. Description: MOSFET 2N-CH 20V 11.6A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
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PMWD16UN,518 PMWD16UN,518 NXP USA Inc. PMWD16UN.pdf Description: MOSFET 2N-CH 20V 9.9A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A
Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V
Rds On (Max) @ Id, Vgs: 19mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
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PMWD19UN,518 PMWD19UN,518 NXP USA Inc. PMWD19UN.pdf Description: MOSFET 2N-CH 30V 5.6A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
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PMWD26UN,518 PMWD26UN,518 NXP USA Inc. PMWD26UN.pdf Description: MOSFET 2N-CH 20V 7.8A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
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PMWD30UN,518 PMWD30UN,518 NXP USA Inc. PMWD30UN.pdf Description: MOSFET 2N-CH 30V 5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
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PMGD400UN,115 PMGD400UN,115 NXP USA Inc. Description: MOSFET 2N-CH 30V 0.71A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 410mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 710mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSSOP
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PMGD8000LN,115 PMGD8000LN,115 NXP USA Inc. PMGD8000LN.pdf Description: MOSFET 2N-CH 30V 0.125A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 125mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: 6-TSSOP
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SA601DK,118 SA601DK,118 NXP USA Inc. SA601.pdf Description: IC MIXER LNA 1GHZ 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 1GHz
Voltage - Supply: 2.7V ~ 5.5V
Gain: 11.5dB
Current - Supply: 7.4mA
Noise Figure: 1.6dB
Number of Mixers: 1
Supplier Device Package: 20-SSOP
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SA620DK,118 SA620DK,118 NXP USA Inc. SA620.pdf Description: IC AMP UHF 800MHZ-1.2GHZ 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 800MHz ~ 1.2GHz
RF Type: Cordless Phones, UHF
Voltage - Supply: 2.7V ~ 5.5V
Gain: 11.5dB
Current - Supply: 10.4mA
Noise Figure: 1.3dB ~ 1.9dB
P1dB: 16dBm
Test Frequency: 900MHz
Supplier Device Package: 20-SSOP
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SA647DH,118 SA647DH,118 NXP USA Inc. SA647.pdf Description: IC DIGITAL IF RCVR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: IF Receiver
Frequency: 200MHz
RF Type: Cellular, NADC
Secondary Attributes: RSSI Equipped
Supplier Device Package: 20-TSSOP
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SA8027DH,518 SA8027DH,518 NXP USA Inc. SA8027_5.pdf Description: IC FRACT N SYNTH 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 2.5GHz
Type: Fractional N Synthesizer
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Ratio - Input:Output: 2:3
Differential - Input:Output: Yes/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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SA58643DP,118 SA58643DP,118 NXP USA Inc. SA58643.pdf Description: IC RF SWITCH SPDT 1GHZ 8TSSOP
Features: Single Line Control
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: 802.11a/b/g/WiFi, WLAN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Insertion Loss: 2dB
Frequency Range: 0Hz ~ 1GHz
Topology: Absorptive
P1dB: 18dBm OP1dB
Test Frequency: 900MHz
Isolation: 30dB
Supplier Device Package: 8-TSSOP
IIP3: 33dBm
Part Status: Obsolete
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SA58641DK,118 SA58641DK,118 NXP USA Inc. SA58641.pdf Description: IC MIXER 500MHZ UP CONVRT 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 500MHz
RF Type: Cellular, ASK, DECT, FSK, UHF, VHF
Voltage - Supply: 4.5V ~ 5.5V
Gain: 11dB
Current - Supply: 8.5mA
Secondary Attributes: Up Converter
Noise Figure: 12dB
Number of Mixers: 2
Supplier Device Package: 20-SSOP
Part Status: Obsolete
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TDA8542TS/N1,118 TDA8542TS/N1,118 NXP USA Inc. TDA8542TS.pdf Description: IC AMP CLASS AB STER 1.2W 20SSOP
Packaging: Tape & Reel (TR)
Features: Depop, Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 18V
Max Output Power x Channels @ Load: 1.2W x 2 @ 8Ohm
Supplier Device Package: 20-SSOP
Part Status: Obsolete
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TDA8543T/N1,518 TDA8543T/N1,518 NXP USA Inc. TDA8543.pdf Description: IC AMP CLASS AB MONO 2.2W 16SO
Packaging: Tape & Reel (TR)
Features: Depop, Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 18V
Max Output Power x Channels @ Load: 2.2W x 1 @ 8Ohm
Supplier Device Package: 16-SO
Part Status: Obsolete
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NE57810S,518 NE57810S,518 NXP USA Inc. NE57810.pdf Description: IC REG CONV DDR 1OUT 5SPAK
Packaging: Cut Tape (CT)
Package / Case: SPak-5 (5 leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.6V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Applications: Converter, DDR
Supplier Device Package: 5-SPAK
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NE57814DD,518 NE57814DD,518 NXP USA Inc. NE57814.pdf Description: IC DDR TERM W/STANDBY 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.6V ~ 3.6V
Applications: Memory, DDR/DDR2 Regulator
Current - Supply: 14mA
Supplier Device Package: 8-HSO
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TEA1520T/N2,518 TEA1520T/N2,518 NXP USA Inc. TEA152X.pdf Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 145°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 10kHz ~ 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 40V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Voltage - Start Up: 9.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 30 W
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TEA1521T/N2,518 TEA1521T/N2,518 NXP USA Inc. TEA152X.pdf Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 145°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 10kHz ~ 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 40V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Voltage - Start Up: 9.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 30 W
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TEA1532AT/N1,118 TEA1532AT/N1,118 NXP USA Inc. TEA1532.pdf Description: IC PFC CTRLR CCM 75KHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 70°C
Voltage - Supply: 8.7V ~ 20V
Frequency - Switching: 50kHz ~ 75kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SO
Part Status: Obsolete
Current - Startup: 1.2 mA
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TEA1610T/N5,118 TEA1610T/N5,118 NXP USA Inc. TEA1610T_P.pdf Description: IC RESONANT CONVRTR CTRLR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 70°C
Voltage - Supply: 0V ~ 15V
Applications: Resonant Converter Controller
Supplier Device Package: 16-SO
Part Status: Obsolete
Current - Supply: 2.4 mA
DigiKey Programmable: Not Verified
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TEA1654T/N1,518 TEA1654T/N1,518 NXP USA Inc. TEA1654.pdf Description: IC GREENCHIP SMPS CNTRLR 14SOIC
Packaging: Cut Tape (CT)
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PH3830L,115 PH3830L,115 NXP USA Inc. PH3830L.pdf Description: MOSFET N-CH 30V 98A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 10 V
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SC16IS752IPW-T SC16IS752%2C762.pdf
SC16IS752IPW-T
Виробник: NXP USA Inc.
Description: IC UART DUAL I2C/SPI 28-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 2mA
Protocol: RS232, RS485
Supplier Device Package: 28-TSSOP
DigiKey Programmable: Not Verified
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SC16IS760IBS,128 SC16IS740_750_760.pdf
SC16IS760IBS,128
Виробник: NXP USA Inc.
Description: IC UART I2C/SPI 24-HVQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 6mA
Protocol: RS232, RS485
Supplier Device Package: 24-HVQFN (4x4)
DigiKey Programmable: Not Verified
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SC16IS760IPW-T SC16IS740%2C750%2C760.pdf
SC16IS760IPW-T
Виробник: NXP USA Inc.
Description: IC UART I2C/SPI 24-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 6mA
Protocol: RS232, RS485
Supplier Device Package: 24-TSSOP
DigiKey Programmable: Not Verified
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SC16IS762IBS-T SC16IS752%2C762.pdf
SC16IS762IBS-T
Виробник: NXP USA Inc.
Description: IC UART DUAL I2C/SPI 32-HVQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 2mA
Protocol: RS232, RS485
Supplier Device Package: 32-HVQFN (5x5)
DigiKey Programmable: Not Verified
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SC16IS762IPW-T SC16IS752%2C762.pdf
SC16IS762IPW-T
Виробник: NXP USA Inc.
Description: IC UART DUAL I2C/SPI 28-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 2mA
Protocol: RS232, RS485
Supplier Device Package: 28-TSSOP
DigiKey Programmable: Not Verified
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BGF844,127 BGF844_7.pdf
BGF844,127
Виробник: NXP USA Inc.
Description: IC AMP GSM 869MHZ-894MHZ SOT365C
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BGF944,127 BGF944_7.pdf
BGF944,127
Виробник: NXP USA Inc.
Description: IC AMP GSM 920MHZ-960MHZ SOT365C
Packaging: Tube
Package / Case: SOT-365C
Mounting Type: Chassis Mount
Frequency: 920MHz ~ 960MHz
RF Type: GSM, EDGE
Voltage - Supply: 30V
Gain: 30dB
Current - Supply: 280mA
Supplier Device Package: SOT-365C
Part Status: Obsolete
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BLF4G10LS-120,112 BLF4G10LS-120.pdf
Виробник: NXP USA Inc.
Description: FET RF 65V 960MHZ SOT502B
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BLF4G20LS-110B,112 BLF4G20LS-110B_1.pdf
Виробник: NXP USA Inc.
Description: FET RF 65V 1.99GHZ SOT502B
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BLF4G20S-110B,112 BLF4G20-110B_4G20S-110B_1.pdf
Виробник: NXP USA Inc.
Description: FET RF 65V 1.99GHZ SOT502B
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BLF4G22S-100,112 BLF4G22(S)-100.pdf
Виробник: NXP USA Inc.
Description: FET RF 65V 2.17GHZ SOT502B
Packaging: Tray
Package / Case: SOT-502B
Current Rating (Amps): 12A
Mounting Type: Chassis Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 25W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: SOT502B
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 900 mA
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PMF280UN,115 PMF280UN.pdf
PMF280UN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 1.02A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Power Dissipation (Max): 560mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V
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PMF290XN,115
PMF290XN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 1A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 560mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 20 V
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PMF3800SN,115
PMF3800SN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 260MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 560mW (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 1mA
Supplier Device Package: SC-70
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
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PMF400UN,115 PMF400UN.pdf
PMF400UN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 830MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
Power Dissipation (Max): 560mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
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PMF780SN,115 PMF780SN.pdf
PMF780SN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 570MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 570mA (Ta)
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Power Dissipation (Max): 560mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
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PIP401,118 PIP401-03.pdf
PIP401,118
Виробник: NXP USA Inc.
Description: IC OR CTRLR N+1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6.3V ~ 20V
Applications: CompactPCI™ High Reliability Power Supply Networks
Internal Switch(s): Yes
FET Type: N-Channel
Delay Time - ON: 7 µs
Delay Time - OFF: 200 ns
Current - Output (Max): 75A
Ratio - Input:Output: N:1
Supplier Device Package: D2PAK-7
Part Status: Obsolete
Current - Supply: 3 mA
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PIP202-12M-2,518 PIP202-12M-2.pdf
PIP202-12M-2,518
Виробник: NXP USA Inc.
Description: IC HALF BRIDGE DRVR 25A 68HVQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 3.3V ~ 12V
Applications: Synchronous Buck Converters
Current - Output / Channel: 25A
Current - Peak Output: 200A
Technology: Power MOSFET
Voltage - Load: 25V (Max)
Supplier Device Package: 68-HVQFN (10x10)
Load Type: Inductive
Part Status: Obsolete
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PIP201-12M-3,518 PIP201-12M.pdf
PIP201-12M-3,518
Виробник: NXP USA Inc.
Description: IC HALF BRIDGE DRVR 20A 68HVQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 12V
Applications: Synchronous Buck Converters
Current - Output / Channel: 20A
Current - Peak Output: 200A
Technology: Power MOSFET
Voltage - Load: 25V (Max)
Supplier Device Package: 68-HVQFN (10x10)
Load Type: Inductive
Part Status: Obsolete
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NE57810S,518 NE57810.pdf
NE57810S,518
Виробник: NXP USA Inc.
Description: IC REG CONV DDR 1OUT 5SPAK
Packaging: Tape & Reel (TR)
Package / Case: SPak-5 (5 leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.6V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Applications: Converter, DDR
Supplier Device Package: 5-SPAK
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NE57811S,518 NE57811.pdf
NE57811S,518
Виробник: NXP USA Inc.
Description: IC REG CONV DDR 1OUT 5SPAK
Packaging: Tape & Reel (TR)
Package / Case: SPak-5 (5 leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.6V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Applications: Converter, DDR
Supplier Device Package: 5-SPAK
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NE57814DD,518 NE57814.pdf
NE57814DD,518
Виробник: NXP USA Inc.
Description: IC DDR TERM W/STANDBY 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.6V ~ 3.6V
Applications: Memory, DDR/DDR2 Regulator
Current - Supply: 14mA
Supplier Device Package: 8-HSO
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TEA1520T/N2,518 TEA152X.pdf
TEA1520T/N2,518
Виробник: NXP USA Inc.
Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 145°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 10kHz ~ 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 40V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Voltage - Start Up: 9.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 30 W
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TEA1521T/N2,518 TEA152X.pdf
TEA1521T/N2,518
Виробник: NXP USA Inc.
Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 145°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 10kHz ~ 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 40V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Voltage - Start Up: 9.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 30 W
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TEA1506T/N1,518 TEA1506_TEA1506A.pdf
TEA1506T/N1,518
Виробник: NXP USA Inc.
Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 145°C (TJ)
Frequency - Switching: 25kHz ~ 175kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.7V ~ 20V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 11 V
Part Status: Obsolete
Power (Watts): 150 W
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TEA1507P/N1,112 TEA1507.pdf
TEA1507P/N1,112
Виробник: NXP USA Inc.
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 145°C (TJ)
Frequency - Switching: 6.5kHz ~ 175kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.7V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 11 V
Part Status: Obsolete
Power (Watts): 250 W
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TEA1532AT/N1,118 TEA1532.pdf
TEA1532AT/N1,118
Виробник: NXP USA Inc.
Description: IC PFC CTRLR CCM 75KHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 70°C
Voltage - Supply: 8.7V ~ 20V
Frequency - Switching: 50kHz ~ 75kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SO
Part Status: Obsolete
Current - Startup: 1.2 mA
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TEA1533AT/N1,518 TEA1533T_AT.pdf
TEA1533AT/N1,518
Виробник: NXP USA Inc.
Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 145°C (TJ)
Frequency - Switching: 25kHz ~ 175kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.7V ~ 20V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 11 V
Part Status: Obsolete
Power (Watts): 250 W
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TEA1552T/N1,518 TEA1552.pdf
TEA1552T/N1,518
Виробник: NXP USA Inc.
Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 145°C (TJ)
Frequency - Switching: 25kHz ~ 125kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.7V ~ 20V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Short Circuit
Voltage - Start Up: 11 V
Power (Watts): 250 W
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TEA1610T/N5,118 TEA1610T_P.pdf
TEA1610T/N5,118
Виробник: NXP USA Inc.
Description: IC RESONANT CONVRTR CTRLR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 70°C
Voltage - Supply: 0V ~ 15V
Applications: Resonant Converter Controller
Supplier Device Package: 16-SO
Part Status: Obsolete
Current - Supply: 2.4 mA
DigiKey Programmable: Not Verified
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PH3830L,115 PH3830L.pdf
PH3830L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 98A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 10 V
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PH5330E,115
PH5330E,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 80A LFPAK56
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PH7030L,115 PH7030L.pdf
PH7030L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 68A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 10 V
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PMV30UN,215 PMV30UN.pdf
PMV30UN,215
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 5.7A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V
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PMV40UN,215 PMV40UN.pdf
PMV40UN,215
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 4.9A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 30 V
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PMV45EN,215 PMV45EN.pdf
PMV45EN,215
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 5.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 2A, 10V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
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PMV60EN,215
PMV60EN,215
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 4.7A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
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PMWD15UN,518
PMWD15UN,518
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 20V 11.6A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
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PMWD16UN,518 PMWD16UN.pdf
PMWD16UN,518
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 20V 9.9A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A
Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V
Rds On (Max) @ Id, Vgs: 19mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
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PMWD19UN,518 PMWD19UN.pdf
PMWD19UN,518
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 5.6A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
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PMWD26UN,518 PMWD26UN.pdf
PMWD26UN,518
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 20V 7.8A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
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PMWD30UN,518 PMWD30UN.pdf
PMWD30UN,518
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
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PMGD400UN,115
PMGD400UN,115
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 0.71A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 410mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 710mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSSOP
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PMGD8000LN,115 PMGD8000LN.pdf
PMGD8000LN,115
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 0.125A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 125mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: 6-TSSOP
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SA601DK,118 SA601.pdf
SA601DK,118
Виробник: NXP USA Inc.
Description: IC MIXER LNA 1GHZ 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 1GHz
Voltage - Supply: 2.7V ~ 5.5V
Gain: 11.5dB
Current - Supply: 7.4mA
Noise Figure: 1.6dB
Number of Mixers: 1
Supplier Device Package: 20-SSOP
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SA620DK,118 SA620.pdf
SA620DK,118
Виробник: NXP USA Inc.
Description: IC AMP UHF 800MHZ-1.2GHZ 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 800MHz ~ 1.2GHz
RF Type: Cordless Phones, UHF
Voltage - Supply: 2.7V ~ 5.5V
Gain: 11.5dB
Current - Supply: 10.4mA
Noise Figure: 1.3dB ~ 1.9dB
P1dB: 16dBm
Test Frequency: 900MHz
Supplier Device Package: 20-SSOP
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SA647DH,118 SA647.pdf
SA647DH,118
Виробник: NXP USA Inc.
Description: IC DIGITAL IF RCVR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: IF Receiver
Frequency: 200MHz
RF Type: Cellular, NADC
Secondary Attributes: RSSI Equipped
Supplier Device Package: 20-TSSOP
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SA8027DH,518 SA8027_5.pdf
SA8027DH,518
Виробник: NXP USA Inc.
Description: IC FRACT N SYNTH 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 2.5GHz
Type: Fractional N Synthesizer
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Ratio - Input:Output: 2:3
Differential - Input:Output: Yes/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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SA58643DP,118 SA58643.pdf
SA58643DP,118
Виробник: NXP USA Inc.
Description: IC RF SWITCH SPDT 1GHZ 8TSSOP
Features: Single Line Control
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: 802.11a/b/g/WiFi, WLAN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Insertion Loss: 2dB
Frequency Range: 0Hz ~ 1GHz
Topology: Absorptive
P1dB: 18dBm OP1dB
Test Frequency: 900MHz
Isolation: 30dB
Supplier Device Package: 8-TSSOP
IIP3: 33dBm
Part Status: Obsolete
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SA58641DK,118 SA58641.pdf
SA58641DK,118
Виробник: NXP USA Inc.
Description: IC MIXER 500MHZ UP CONVRT 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 500MHz
RF Type: Cellular, ASK, DECT, FSK, UHF, VHF
Voltage - Supply: 4.5V ~ 5.5V
Gain: 11dB
Current - Supply: 8.5mA
Secondary Attributes: Up Converter
Noise Figure: 12dB
Number of Mixers: 2
Supplier Device Package: 20-SSOP
Part Status: Obsolete
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TDA8542TS/N1,118 TDA8542TS.pdf
TDA8542TS/N1,118
Виробник: NXP USA Inc.
Description: IC AMP CLASS AB STER 1.2W 20SSOP
Packaging: Tape & Reel (TR)
Features: Depop, Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 18V
Max Output Power x Channels @ Load: 1.2W x 2 @ 8Ohm
Supplier Device Package: 20-SSOP
Part Status: Obsolete
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TDA8543T/N1,518 TDA8543.pdf
TDA8543T/N1,518
Виробник: NXP USA Inc.
Description: IC AMP CLASS AB MONO 2.2W 16SO
Packaging: Tape & Reel (TR)
Features: Depop, Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 18V
Max Output Power x Channels @ Load: 2.2W x 1 @ 8Ohm
Supplier Device Package: 16-SO
Part Status: Obsolete
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NE57810S,518 NE57810.pdf
NE57810S,518
Виробник: NXP USA Inc.
Description: IC REG CONV DDR 1OUT 5SPAK
Packaging: Cut Tape (CT)
Package / Case: SPak-5 (5 leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.6V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Applications: Converter, DDR
Supplier Device Package: 5-SPAK
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NE57814DD,518 NE57814.pdf
NE57814DD,518
Виробник: NXP USA Inc.
Description: IC DDR TERM W/STANDBY 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.6V ~ 3.6V
Applications: Memory, DDR/DDR2 Regulator
Current - Supply: 14mA
Supplier Device Package: 8-HSO
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TEA1520T/N2,518 TEA152X.pdf
TEA1520T/N2,518
Виробник: NXP USA Inc.
Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 145°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 10kHz ~ 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 40V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Voltage - Start Up: 9.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 30 W
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TEA1521T/N2,518 TEA152X.pdf
TEA1521T/N2,518
Виробник: NXP USA Inc.
Description: IC OFFLINE SWITCH FLYBACK 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 145°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 10kHz ~ 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 40V
Supplier Device Package: 14-SO
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Voltage - Start Up: 9.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 30 W
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TEA1532AT/N1,118 TEA1532.pdf
TEA1532AT/N1,118
Виробник: NXP USA Inc.
Description: IC PFC CTRLR CCM 75KHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 70°C
Voltage - Supply: 8.7V ~ 20V
Frequency - Switching: 50kHz ~ 75kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SO
Part Status: Obsolete
Current - Startup: 1.2 mA
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TEA1610T/N5,118 TEA1610T_P.pdf
TEA1610T/N5,118
Виробник: NXP USA Inc.
Description: IC RESONANT CONVRTR CTRLR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 70°C
Voltage - Supply: 0V ~ 15V
Applications: Resonant Converter Controller
Supplier Device Package: 16-SO
Part Status: Obsolete
Current - Supply: 2.4 mA
DigiKey Programmable: Not Verified
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TEA1654T/N1,518 TEA1654.pdf
TEA1654T/N1,518
Виробник: NXP USA Inc.
Description: IC GREENCHIP SMPS CNTRLR 14SOIC
Packaging: Cut Tape (CT)
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PH3830L,115 PH3830L.pdf
PH3830L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 98A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 10 V
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