Продукція > NXP USA INC. > Всі товари виробника NXP USA INC. (35301) > Сторінка 93 з 589
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MC33996EK | NXP USA Inc. |
 Description: IC PWR SWITCH N-CH 1:16 32SOICFeatures: PWM Input Packaging: Tube Package / Case: 32-BSSOP (0.295", 7.50mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 16 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 550mOhm Voltage - Load: 5V ~ 27V Voltage - Supply (Vcc/Vdd): 1.5V ~ 3V Current - Output (Max): 900mA Ratio - Input:Output: 1:16 Supplier Device Package: 32-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
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MC33972EW | NXP USA Inc. |
Description: IC INTERFACE SPECIALIZED 32SOIC Packaging: Tube Package / Case: 32-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: SPI Serial Voltage - Supply: 3.1V ~ 5.25V Applications: Switch Monitoring Supplier Device Package: 32-SOIC Part Status: Obsolete |
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MMA1250EG | NXP USA Inc. |
Description: ACCELEROMETER 5G ANALOG 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Analog Voltage Mounting Type: Surface Mount Type: Analog Axis: Z Acceleration Range: ±5g Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.75V ~ 5.25V Bandwidth: 50Hz Supplier Device Package: 16-SOIC Sensitivity (mV/g): 400 Grade: Automotive Qualification: AEC-Q100 |
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MMA2201EG | NXP USA Inc. |
Description: ACCELEROMETER 45G ANALOG 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Analog Voltage Mounting Type: Surface Mount Type: Analog Axis: X Acceleration Range: ±45g Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Bandwidth: 400Hz Supplier Device Package: 16-SOIC Sensitivity (mV/g): 50 Grade: Automotive Qualification: AEC-Q100 |
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MPXV2202GC6U | NXP USA Inc. |
Description: SENSOR 29.01PSIG 0.13" .04V Features: Temperature Compensated Packaging: Tube Package / Case: 8-SMD, Gull Wing, Top Port Output Type: Wheatstone Bridge Mounting Type: Surface Mount Output: 0 mV ~ 40 mV (10V) Operating Pressure: 29.01PSI (200kPa) Pressure Type: Vented Gauge Operating Temperature: -40°C ~ 125°C Termination Style: Gull Wing Voltage - Supply: 10V ~ 16V Port Size: Male - 0.13" (3.17mm) Tube Applications: Board Mount Port Style: Barbless Maximum Pressure: 58.02PSI (400kPa) Part Status: Obsolete |
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DEMO9S08QG8E | NXP USA Inc. |
 Description: MC9S08QG8 EVAL BRDPackaging: Bulk Mounting Type: Fixed Type: MCU 8-Bit Contents: Board(s) Core Processor: HCS08 Board Type: Evaluation Platform Utilized IC / Part: MC9S08QG8 Part Status: Discontinued at Digi-Key |
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MC68HC11K1CFNE4 | NXP USA Inc. |
Description: IC MCU 8BIT ROMLESS 84PLCC Packaging: Tube Package / Case: 84-LCC (J-Lead) Mounting Type: Surface Mount Speed: 4MHz RAM Size: 768 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: ROMless EEPROM Size: 640 x 8 Core Processor: HC11 Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: SCI, SPI Peripherals: POR, PWM, WDT Supplier Device Package: 84-PLCC (29.29x29.29) Number of I/O: 37 DigiKey Programmable: Not Verified |
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MC711K4CFNE4 | NXP USA Inc. |
Description: IC MCU 8BIT 24KB OTP 84PLCC |
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MM908E624ACEW | NXP USA Inc. |
Description: IC SWITCH TRIPLE MCU/LIN 54-SOIC |
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MM908E625ACEK | NXP USA Inc. |
Description: IC HALF-BRIDGE QUAD 54-SOIC |
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MMA1210EG | NXP USA Inc. |
Description: ACCEL 112.5G ANALOG 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Analog Voltage Mounting Type: Surface Mount Type: Analog Axis: Z Acceleration Range: ±112.5g Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Bandwidth: 400Hz Supplier Device Package: 16-SOIC Sensitivity (mV/g): 20 Grade: Automotive Qualification: AEC-Q100 |
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MMA1213EG | NXP USA Inc. |
Description: ACCEL 56.3G ANALOG 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Analog Voltage Mounting Type: Surface Mount Type: Analog Axis: Z Acceleration Range: ±56.3g Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Bandwidth: 400Hz Supplier Device Package: 16-SOIC Sensitivity (mV/g): 40 |
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MMA1220EG | NXP USA Inc. |
Description: ACCELEROMETER 8G ANALOG 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Analog Voltage Mounting Type: Surface Mount Type: Analog Axis: Z Acceleration Range: ±8G Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Bandwidth: 250Hz Supplier Device Package: 16-SOIC Sensitivity (mV/g): 250 |
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MMA3201EG | NXP USA Inc. |
Description: ACCELEROMETER 45G ANALOG 20SOIC Packaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Analog Voltage Mounting Type: Surface Mount Type: Analog Axis: X, Y Acceleration Range: ±45g Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.75V ~ 5.25V Bandwidth: 400Hz Supplier Device Package: 20-SOIC Sensitivity (mV/g): 50 |
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MMA3202EG | NXP USA Inc. |
Description: ACCEL 112.5G/56.3G ANALOG 20SOIC Packaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Analog Voltage Mounting Type: Surface Mount Type: Analog Axis: X, Y Acceleration Range: ±112.5g (X), ±56.3g (Y) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Bandwidth: 400Hz Supplier Device Package: 20-SOIC Sensitivity (mV/g): 20 (X), 40 (Y) Grade: Automotive Qualification: AEC-Q100 |
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LPC2131FBD64/01,15 | NXP USA Inc. |
Description: IC MCU 16/32BIT 32KB FLSH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 60MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM7® Data Converters: A/D 8x10b SAR; D/A 1x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Not For New Designs Number of I/O: 47 DigiKey Programmable: Not Verified |
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LPC2132FHN64/01,55 | NXP USA Inc. |
Description: IC MCU 16/32B 64KB FLASH 64HVQFN Packaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 60MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM7® Data Converters: A/D 8x10b; D/A 1x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: I²C, Microwire, SPI, SSI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-HVQFN (9x9) Part Status: Obsolete Number of I/O: 47 DigiKey Programmable: Not Verified |
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LPC2134FBD64/01,15 | NXP USA Inc. |
Description: IC MCU 16/32B 128KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 60MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM7® Data Converters: A/D 16x10b SAR; D/A 1x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Discontinued at Digi-Key Number of I/O: 47 DigiKey Programmable: Not Verified |
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LPC2138FBD64/01,15 | NXP USA Inc. |
Description: IC MCU 16/32B 512KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 60MHz Program Memory Size: 512KB (512K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM7® Data Converters: A/D 16x10b SAR; D/A 1x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Discontinued at Digi-Key Number of I/O: 47 DigiKey Programmable: Not Verified |
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LPC2138FHN64/01,55 | NXP USA Inc. |
Description: IC MCU 16/32B 512KB FLSH 64HVQFN Packaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 60MHz Program Memory Size: 512KB (512K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM7® Data Converters: A/D 16x10b SAR; D/A 1x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-HVQFN (9x9) Part Status: Obsolete Number of I/O: 47 DigiKey Programmable: Not Verified |
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LPC2210FBD144/01,5 | NXP USA Inc. |
Description: IC MCU 16/32BIT ROMLESS 144LQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 60MHz RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: ROMless Core Processor: ARM7® Data Converters: A/D 8x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: EBI/EMI, I2C, Microwire, SPI, SSI, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 76 DigiKey Programmable: Not Verified |
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1PS181,135 | NXP USA Inc. |
Description: DIODE ARRAY GP 80V 215MA SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SMT3; MPAK Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
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1PS184,135 | NXP USA Inc. |
Description: DIODE ARRAY GP 80V 215MA SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SMT3; MPAK Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
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1PS184,115 | NXP USA Inc. |
Description: DIODE ARRAY GP 80V 215MA SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SMT3; MPAK Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
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1PS193,135 | NXP USA Inc. |
Description: DIODE GP 80V 215MA SMT3 MPAK |
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1PS193,115 | NXP USA Inc. |
Description: DIODE STD 80V 215MA SMT3 MPAK Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SMT3; MPAK Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
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1PS226,135 | NXP USA Inc. |
Description: DIODE ARRAY GP 80V 215MA SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SMT3; MPAK Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
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1PS226,115 | NXP USA Inc. |
Description: DIODE ARRAY GP 80V 215MA SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SMT3; MPAK Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
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1PS59SB10,115 | NXP USA Inc. |
Description: DIODE SCHO 30V 200MA SMT3 MPAK Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SMT3; MPAK Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
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1PS59SB20,115 | NXP USA Inc. |
Description: DIODE SCHO 40V 500MA SMT3 MPAK Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 90pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SMT3; MPAK Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 35 V |
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1PS75SB45,135 | NXP USA Inc. |
Description: DIODE ARR SCHOTT 40V 120MA SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SC-75 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
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1PS75SB45,115 | NXP USA Inc. |
Description: DIODE ARR SCHOTT 40V 120MA SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SC-75 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
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2N5064,112 | NXP USA Inc. |
Description: SCR 200V 800MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz Current - On State (It (AV)) (Max): 510 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.71 V Current - Off State (Max): 10 µA Supplier Device Package: TO-92-3 Part Status: Obsolete Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 200 V |
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2N5401,116 | NXP USA Inc. |
Description: TRANS PNP 150V 0.3A TO-92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 630 mW |
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2N5551,116 | NXP USA Inc. |
Description: TRANS NPN 160V 0.3A TO-92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 630 mW |
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2N7000,126 | NXP USA Inc. |
Description: MOSFET N-CH 60V 300MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
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2N7002K,215 | NXP USA Inc. |
Description: MOSFET N-CH 60V 340MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
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2PA1015GR,126 | NXP USA Inc. |
Description: TRANS PNP 50V 0.15A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PA1015Y,126 | NXP USA Inc. |
Description: TRANS PNP 50V 0.15A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
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2PA1774Q,115 | NXP USA Inc. |
Description: TRANS PNP 50V 0.15A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-75 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
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2PA1774R,115 | NXP USA Inc. |
Description: TRANS PNP 50V 0.15A SC-75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-75 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PA1774S,115 | NXP USA Inc. |
Description: TRANS PNP 50V 0.15A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-75 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
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2PB709AQ,115 | NXP USA Inc. |
Description: TRANS PNP 45V 0.1A SMT3 MPAK Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Frequency - Transition: 60MHz Supplier Device Package: SMT3; MPAK Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
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2PB709AQW,115 | NXP USA Inc. |
Description: TRANS PNP 45V 0.1A SMT3 MPAK Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Frequency - Transition: 60MHz Supplier Device Package: SMT3; MPAK Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
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2PB709AS,115 | NXP USA Inc. |
Description: TRANS PNP 45V 0.1A SMT3 MPAK Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V Frequency - Transition: 80MHz Supplier Device Package: SMT3; MPAK Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. |
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2PB710AQ,115 | NXP USA Inc. |
Description: TRANS PNP 50V 0.5A SC59 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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2PB710AR,115 | NXP USA Inc. |
Description: TRANS PNP 50V 0.5A SC59 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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2PB710AS,115 | NXP USA Inc. |
Description: TRANS PNP 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V Frequency - Transition: 140MHz Supplier Device Package: SMT3; MPAK Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PC1815BL,126 | NXP USA Inc. |
Description: TRANS NPN 50V 0.15A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PC1815GR,412 | NXP USA Inc. |
Description: TRANS NPN 50V 0.15A TO-92-3 Packaging: Tube Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PC1815GR,126 | NXP USA Inc. |
Description: TRANS NPN 50V 0.15A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PC1815GR,116 | NXP USA Inc. |
Description: TRANS NPN 50V 0.15A TO-92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PC1815Y,412 | NXP USA Inc. |
Description: TRANS NPN 50V 0.15A TO-92-3 Packaging: Tube Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PC1815Y,126 | NXP USA Inc. |
Description: TRANS NPN 50V 0.15A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2PD1820AQ,115 | NXP USA Inc. |
Description: TRANS NPN 50V 0.5A SC-70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V Frequency - Transition: 150MHz Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PD601AQ,115 | NXP USA Inc. |
Description: TRANS NPN 50V 0.1A SMT3 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2PD601AQW,115 | NXP USA Inc. |
Description: TRANS NPN 50V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PD601AR,115 | NXP USA Inc. |
Description: TRANS NPN 50V 0.1A SMT3 MPAK Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Frequency - Transition: 100MHz Supplier Device Package: SMT3; MPAK Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PD601AS,115 | NXP USA Inc. |
Description: TRANS NPN 50V 0.1A SC-59 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
2PD602AQ,115 | NXP USA Inc. |
Description: TRANS NPN 50V 0.5A SMT3 |
товару немає в наявності |
В кошику од. на суму грн. |
| MC33996EK |
|
Виробник: NXP USA Inc.
Description: IC PWR SWITCH N-CH 1:16 32SOIC
Features: PWM Input
Packaging: Tube
Package / Case: 32-BSSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 16
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 550mOhm
Voltage - Load: 5V ~ 27V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 3V
Current - Output (Max): 900mA
Ratio - Input:Output: 1:16
Supplier Device Package: 32-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CH 1:16 32SOIC
Features: PWM Input
Packaging: Tube
Package / Case: 32-BSSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 16
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 550mOhm
Voltage - Load: 5V ~ 27V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 3V
Current - Output (Max): 900mA
Ratio - Input:Output: 1:16
Supplier Device Package: 32-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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В кошику
од. на суму грн.
| MC33972EW |
Виробник: NXP USA Inc.
Description: IC INTERFACE SPECIALIZED 32SOIC
Packaging: Tube
Package / Case: 32-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.1V ~ 5.25V
Applications: Switch Monitoring
Supplier Device Package: 32-SOIC
Part Status: Obsolete
Description: IC INTERFACE SPECIALIZED 32SOIC
Packaging: Tube
Package / Case: 32-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.1V ~ 5.25V
Applications: Switch Monitoring
Supplier Device Package: 32-SOIC
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| MMA1250EG |
|
Виробник: NXP USA Inc.
Description: ACCELEROMETER 5G ANALOG 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: Z
Acceleration Range: ±5g
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 50Hz
Supplier Device Package: 16-SOIC
Sensitivity (mV/g): 400
Grade: Automotive
Qualification: AEC-Q100
Description: ACCELEROMETER 5G ANALOG 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: Z
Acceleration Range: ±5g
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 50Hz
Supplier Device Package: 16-SOIC
Sensitivity (mV/g): 400
Grade: Automotive
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| MMA2201EG |
|
Виробник: NXP USA Inc.
Description: ACCELEROMETER 45G ANALOG 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: X
Acceleration Range: ±45g
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 400Hz
Supplier Device Package: 16-SOIC
Sensitivity (mV/g): 50
Grade: Automotive
Qualification: AEC-Q100
Description: ACCELEROMETER 45G ANALOG 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: X
Acceleration Range: ±45g
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 400Hz
Supplier Device Package: 16-SOIC
Sensitivity (mV/g): 50
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| MPXV2202GC6U |
|
Виробник: NXP USA Inc.
Description: SENSOR 29.01PSIG 0.13" .04V
Features: Temperature Compensated
Packaging: Tube
Package / Case: 8-SMD, Gull Wing, Top Port
Output Type: Wheatstone Bridge
Mounting Type: Surface Mount
Output: 0 mV ~ 40 mV (10V)
Operating Pressure: 29.01PSI (200kPa)
Pressure Type: Vented Gauge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 10V ~ 16V
Port Size: Male - 0.13" (3.17mm) Tube
Applications: Board Mount
Port Style: Barbless
Maximum Pressure: 58.02PSI (400kPa)
Part Status: Obsolete
Description: SENSOR 29.01PSIG 0.13" .04V
Features: Temperature Compensated
Packaging: Tube
Package / Case: 8-SMD, Gull Wing, Top Port
Output Type: Wheatstone Bridge
Mounting Type: Surface Mount
Output: 0 mV ~ 40 mV (10V)
Operating Pressure: 29.01PSI (200kPa)
Pressure Type: Vented Gauge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 10V ~ 16V
Port Size: Male - 0.13" (3.17mm) Tube
Applications: Board Mount
Port Style: Barbless
Maximum Pressure: 58.02PSI (400kPa)
Part Status: Obsolete
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В кошику
од. на суму грн.
| DEMO9S08QG8E | |
|
Виробник: NXP USA Inc.
Description: MC9S08QG8 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: HCS08
Board Type: Evaluation Platform
Utilized IC / Part: MC9S08QG8
Part Status: Discontinued at Digi-Key
Description: MC9S08QG8 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: HCS08
Board Type: Evaluation Platform
Utilized IC / Part: MC9S08QG8
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.
| MC68HC11K1CFNE4 |
|
Виробник: NXP USA Inc.
Description: IC MCU 8BIT ROMLESS 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 4MHz
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
EEPROM Size: 640 x 8
Core Processor: HC11
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SCI, SPI
Peripherals: POR, PWM, WDT
Supplier Device Package: 84-PLCC (29.29x29.29)
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT ROMLESS 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 4MHz
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
EEPROM Size: 640 x 8
Core Processor: HC11
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SCI, SPI
Peripherals: POR, PWM, WDT
Supplier Device Package: 84-PLCC (29.29x29.29)
Number of I/O: 37
DigiKey Programmable: Not Verified
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В кошику
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| MC711K4CFNE4 |
|
Виробник: NXP USA Inc.
Description: IC MCU 8BIT 24KB OTP 84PLCC
Description: IC MCU 8BIT 24KB OTP 84PLCC
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В кошику
од. на суму грн.
| MM908E624ACEW |
|
Виробник: NXP USA Inc.
Description: IC SWITCH TRIPLE MCU/LIN 54-SOIC
Description: IC SWITCH TRIPLE MCU/LIN 54-SOIC
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В кошику
од. на суму грн.
| MM908E625ACEK |
|
Виробник: NXP USA Inc.
Description: IC HALF-BRIDGE QUAD 54-SOIC
Description: IC HALF-BRIDGE QUAD 54-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| MMA1210EG |
|
Виробник: NXP USA Inc.
Description: ACCEL 112.5G ANALOG 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: Z
Acceleration Range: ±112.5g
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 400Hz
Supplier Device Package: 16-SOIC
Sensitivity (mV/g): 20
Grade: Automotive
Qualification: AEC-Q100
Description: ACCEL 112.5G ANALOG 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: Z
Acceleration Range: ±112.5g
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 400Hz
Supplier Device Package: 16-SOIC
Sensitivity (mV/g): 20
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| MMA1213EG |
|
Виробник: NXP USA Inc.
Description: ACCEL 56.3G ANALOG 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: Z
Acceleration Range: ±56.3g
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 400Hz
Supplier Device Package: 16-SOIC
Sensitivity (mV/g): 40
Description: ACCEL 56.3G ANALOG 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: Z
Acceleration Range: ±56.3g
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 400Hz
Supplier Device Package: 16-SOIC
Sensitivity (mV/g): 40
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| MMA1220EG |
|
Виробник: NXP USA Inc.
Description: ACCELEROMETER 8G ANALOG 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: Z
Acceleration Range: ±8G
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 250Hz
Supplier Device Package: 16-SOIC
Sensitivity (mV/g): 250
Description: ACCELEROMETER 8G ANALOG 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: Z
Acceleration Range: ±8G
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 250Hz
Supplier Device Package: 16-SOIC
Sensitivity (mV/g): 250
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| MMA3201EG |
|
Виробник: NXP USA Inc.
Description: ACCELEROMETER 45G ANALOG 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: X, Y
Acceleration Range: ±45g
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 400Hz
Supplier Device Package: 20-SOIC
Sensitivity (mV/g): 50
Description: ACCELEROMETER 45G ANALOG 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: X, Y
Acceleration Range: ±45g
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 400Hz
Supplier Device Package: 20-SOIC
Sensitivity (mV/g): 50
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| MMA3202EG |
|
Виробник: NXP USA Inc.
Description: ACCEL 112.5G/56.3G ANALOG 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: X, Y
Acceleration Range: ±112.5g (X), ±56.3g (Y)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 400Hz
Supplier Device Package: 20-SOIC
Sensitivity (mV/g): 20 (X), 40 (Y)
Grade: Automotive
Qualification: AEC-Q100
Description: ACCEL 112.5G/56.3G ANALOG 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: X, Y
Acceleration Range: ±112.5g (X), ±56.3g (Y)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Bandwidth: 400Hz
Supplier Device Package: 20-SOIC
Sensitivity (mV/g): 20 (X), 40 (Y)
Grade: Automotive
Qualification: AEC-Q100
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| LPC2131FBD64/01,15 |
|
Виробник: NXP USA Inc.
Description: IC MCU 16/32BIT 32KB FLSH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 8x10b SAR; D/A 1x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Not For New Designs
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 16/32BIT 32KB FLSH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 8x10b SAR; D/A 1x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Not For New Designs
Number of I/O: 47
DigiKey Programmable: Not Verified
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| LPC2132FHN64/01,55 |
|
Виробник: NXP USA Inc.
Description: IC MCU 16/32B 64KB FLASH 64HVQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 8x10b; D/A 1x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I²C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-HVQFN (9x9)
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 64KB FLASH 64HVQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 8x10b; D/A 1x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I²C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-HVQFN (9x9)
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
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| LPC2134FBD64/01,15 |
|
Виробник: NXP USA Inc.
Description: IC MCU 16/32B 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 16x10b SAR; D/A 1x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Discontinued at Digi-Key
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 16x10b SAR; D/A 1x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Discontinued at Digi-Key
Number of I/O: 47
DigiKey Programmable: Not Verified
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| LPC2138FBD64/01,15 |
|
Виробник: NXP USA Inc.
Description: IC MCU 16/32B 512KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 16x10b SAR; D/A 1x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Discontinued at Digi-Key
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 512KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 16x10b SAR; D/A 1x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Discontinued at Digi-Key
Number of I/O: 47
DigiKey Programmable: Not Verified
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| LPC2138FHN64/01,55 |
|
Виробник: NXP USA Inc.
Description: IC MCU 16/32B 512KB FLSH 64HVQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 16x10b SAR; D/A 1x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-HVQFN (9x9)
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 512KB FLSH 64HVQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 16x10b SAR; D/A 1x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-HVQFN (9x9)
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
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| LPC2210FBD144/01,5 |
|
Виробник: NXP USA Inc.
Description: IC MCU 16/32BIT ROMLESS 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: ARM7®
Data Converters: A/D 8x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: EBI/EMI, I2C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: IC MCU 16/32BIT ROMLESS 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: ARM7®
Data Converters: A/D 8x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: EBI/EMI, I2C, Microwire, SPI, SSI, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 76
DigiKey Programmable: Not Verified
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| 1PS181,135 |
|
Виробник: NXP USA Inc.
Description: DIODE ARRAY GP 80V 215MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 215MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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| 1PS184,135 |
|
Виробник: NXP USA Inc.
Description: DIODE ARRAY GP 80V 215MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 215MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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| 1PS184,115 |
|
Виробник: NXP USA Inc.
Description: DIODE ARRAY GP 80V 215MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 215MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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| 1PS193,135 |
|
Виробник: NXP USA Inc.
Description: DIODE GP 80V 215MA SMT3 MPAK
Description: DIODE GP 80V 215MA SMT3 MPAK
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| 1PS193,115 |
|
Виробник: NXP USA Inc.
Description: DIODE STD 80V 215MA SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE STD 80V 215MA SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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| 1PS226,135 |
|
Виробник: NXP USA Inc.
Description: DIODE ARRAY GP 80V 215MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 215MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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| 1PS226,115 |
|
Виробник: NXP USA Inc.
Description: DIODE ARRAY GP 80V 215MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 215MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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| 1PS59SB10,115 |
|
Виробник: NXP USA Inc.
Description: DIODE SCHO 30V 200MA SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHO 30V 200MA SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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| 1PS59SB20,115 |
|
Виробник: NXP USA Inc.
Description: DIODE SCHO 40V 500MA SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Description: DIODE SCHO 40V 500MA SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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| 1PS75SB45,135 |
|
Виробник: NXP USA Inc.
Description: DIODE ARR SCHOTT 40V 120MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 120MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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| 1PS75SB45,115 |
|
Виробник: NXP USA Inc.
Description: DIODE ARR SCHOTT 40V 120MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 120MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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| 2N5064,112 |
|
Виробник: NXP USA Inc.
Description: SCR 200V 800MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.71 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 200 V
Description: SCR 200V 800MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.71 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 200 V
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| 2N5401,116 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 150V 0.3A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 630 mW
Description: TRANS PNP 150V 0.3A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 630 mW
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| 2N5551,116 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 160V 0.3A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 630 mW
Description: TRANS NPN 160V 0.3A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 630 mW
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| 2N7000,126 |
|
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
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| 2N7002K,215 |
|
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 340MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 500mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 60V 340MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 500mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
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| 2PA1015GR,126 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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| 2PA1015Y,126 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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| 2PA1774Q,115 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 50V 0.15A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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| 2PA1774R,115 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 50V 0.15A SC-75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SC-75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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| 2PA1774S,115 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 50V 0.15A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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| 2PB709AQ,115 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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| 2PB709AQW,115 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS PNP 45V 0.1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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| 2PB709AS,115 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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В кошику
од. на суму грн.
| 2PB710AQ,115 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 50V 0.5A SC59
Description: TRANS PNP 50V 0.5A SC59
товару немає в наявності
В кошику
од. на суму грн.
| 2PB710AR,115 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 50V 0.5A SC59
Description: TRANS PNP 50V 0.5A SC59
товару немає в наявності
В кошику
од. на суму грн.
| 2PB710AS,115 |
|
Виробник: NXP USA Inc.
Description: TRANS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2PC1815BL,126 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2PC1815GR,412 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2PC1815GR,126 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2PC1815GR,116 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2PC1815Y,412 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2PC1815Y,126 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2PD1820AQ,115 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS NPN 50V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| 2PD601AQ,115 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.1A SMT3
Description: TRANS NPN 50V 0.1A SMT3
товару немає в наявності
В кошику
од. на суму грн.
| 2PD601AQW,115 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2PD601AR,115 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS NPN 50V 0.1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2PD601AS,115 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.1A SC-59
Description: TRANS NPN 50V 0.1A SC-59
товару немає в наявності
В кошику
од. на суму грн.
| 2PD602AQ,115 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.5A SMT3
Description: TRANS NPN 50V 0.5A SMT3
товару немає в наявності
В кошику
од. на суму грн.