| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| FDMS7660 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 78W; Power56 Mounting: SMD Polarisation: unipolar Drain current: 42A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 3.7mΩ Pulsed drain current: 150A Power dissipation: 78W Gate charge: 84nC |
товару немає в наявності |
В кошику од. на суму грн. | |
| FDMS7692A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 50A; 27W; PQFN8 Mounting: SMD Polarisation: unipolar Drain current: 28A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PQFN8 On-state resistance: 12mΩ Pulsed drain current: 50A Power dissipation: 27W Gate charge: 22nC |
товару немає в наявності |
В кошику од. на суму грн. | |
| FDMS7698 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 50A; 29W; Power56 Mounting: SMD Polarisation: unipolar Drain current: 22A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 15mΩ Pulsed drain current: 50A Power dissipation: 29W Gate charge: 24nC |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
MC14012BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Family: HEF4000B Kind of package: reel; tape Delay time: 130ns |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| FDMS7660 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 78W; Power56
Mounting: SMD
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 3.7mΩ
Pulsed drain current: 150A
Power dissipation: 78W
Gate charge: 84nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 78W; Power56
Mounting: SMD
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 3.7mΩ
Pulsed drain current: 150A
Power dissipation: 78W
Gate charge: 84nC
товару немає в наявності
В кошику
од. на суму грн.
| FDMS7692A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 50A; 27W; PQFN8
Mounting: SMD
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 12mΩ
Pulsed drain current: 50A
Power dissipation: 27W
Gate charge: 22nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 50A; 27W; PQFN8
Mounting: SMD
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 12mΩ
Pulsed drain current: 50A
Power dissipation: 27W
Gate charge: 22nC
товару немає в наявності
В кошику
од. на суму грн.
| FDMS7698 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 50A; 29W; Power56
Mounting: SMD
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 15mΩ
Pulsed drain current: 50A
Power dissipation: 29W
Gate charge: 24nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 50A; 29W; Power56
Mounting: SMD
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 15mΩ
Pulsed drain current: 50A
Power dissipation: 29W
Gate charge: 24nC
товару немає в наявності
В кошику
од. на суму грн.
| MC14012BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Family: HEF4000B
Kind of package: reel; tape
Delay time: 130ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Family: HEF4000B
Kind of package: reel; tape
Delay time: 130ns
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.