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PJQ5606_R2_00001 PJQ5606_R2_00001 Panjit International Inc. PJQ5606.pdf Description: MOSFET N/P-CH 30V 7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
товару немає в наявності
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PJQ5606_R2_00001 PJQ5606_R2_00001 Panjit International Inc. PJQ5606.pdf Description: MOSFET N/P-CH 30V 7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
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PJL9606_R2_00001 Panjit International Inc. Description: 30V COMPLEMENTARY ENHANCEMENT MO
товару немає в наявності
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PJL9606_R2_00001 Panjit International Inc. Description: 30V COMPLEMENTARY ENHANCEMENT MO
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PZS517V5BCH-AU_R1_000A1 PZS517V5BCH-AU_R1_000A1 Panjit International Inc. Description: SILICON ZENER DIODE
товару немає в наявності
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PZS517V5BCH-AU_R1_000A1 PZS517V5BCH-AU_R1_000A1 Panjit International Inc. Description: SILICON ZENER DIODE
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PZS517V5BCH_R1_00001 PZS517V5BCH_R1_00001 Panjit International Inc. Description: SILICON ZENER DIODE
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PZS517V5BCH_R1_00001 PZS517V5BCH_R1_00001 Panjit International Inc. Description: SILICON ZENER DIODE
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PZS517V5BAS_R1_00001 PZS517V5BAS_R1_00001 Panjit International Inc. Description: SILICON ZENER DIODE
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PZS517V5BAS_R1_00001 PZS517V5BAS_R1_00001 Panjit International Inc. Description: SILICON ZENER DIODE
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PZS517V5BAS-AU_R1_000A1 PZS517V5BAS-AU_R1_000A1 Panjit International Inc. Description: SILICON ZENER DIODE
товару немає в наявності
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PZS517V5BAS-AU_R1_000A1 PZS517V5BAS-AU_R1_000A1 Panjit International Inc. Description: SILICON ZENER DIODE
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PJP9NA90_T0_00001 PJP9NA90_T0_00001 Panjit International Inc. Description: 900V N-CHANNEL MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 25 V
товару немає в наявності
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MMSZ5232B-AU_R1_000A1 MMSZ5232B-AU_R1_000A1 Panjit International Inc. MMSZ5221B-AU_SERIES.pdf Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 5808 шт:
термін постачання 21-31 дні (днів)
22+15.62 грн
35+9.18 грн
100+5.69 грн
500+3.90 грн
1000+3.44 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
MMSZ5232BS-AU_R1_000A1 MMSZ5232BS-AU_R1_000A1 Panjit International Inc. MMSZ5221BS-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+2.03 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MMSZ5232BS-AU_R1_000A1 MMSZ5232BS-AU_R1_000A1 Panjit International Inc. MMSZ5221BS-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
22+15.62 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BAS70_R1_00001 BAS70_R1_00001 Panjit International Inc. BAS70_SERIES.pdf Description: DIODE SCHOTTKY 70V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
товару немає в наявності
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BAS70_R1_00001 BAS70_R1_00001 Panjit International Inc. BAS70_SERIES.pdf Description: DIODE SCHOTTKY 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 1944 шт:
термін постачання 21-31 дні (днів)
25+13.15 грн
28+11.56 грн
100+6.29 грн
500+3.64 грн
1000+2.48 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BAS70A_R1_00001 BAS70A_R1_00001 Panjit International Inc. BAS70_SERIES.pdf Description: SURFACE MOUNT SCHOTTKY DIODE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
товару немає в наявності
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BAS70A_R1_00001 BAS70A_R1_00001 Panjit International Inc. BAS70_SERIES.pdf Description: SURFACE MOUNT SCHOTTKY DIODE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 2740 шт:
термін постачання 21-31 дні (днів)
19+18.08 грн
23+14.17 грн
100+7.53 грн
500+4.65 грн
1000+3.16 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
BAS40W_R1_00001 BAS40W_R1_00001 Panjit International Inc. BAS40W_SERIES.pdf Description: DIODE SCHOTTKY 40V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAS40W_R1_00001 BAS40W_R1_00001 Panjit International Inc. BAS40W_SERIES.pdf Description: DIODE SCHOTTKY 40V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
23+14.79 грн
26+12.58 грн
100+6.89 грн
500+3.98 грн
1000+2.71 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BAS40CW_R1_00001 BAS40CW_R1_00001 Panjit International Inc. BAS40W_SERIES.pdf Description: SURFACE MOUNT SCHOTTKY DIODE
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BAS40CW_R1_00001 BAS40CW_R1_00001 Panjit International Inc. BAS40W_SERIES.pdf Description: SURFACE MOUNT SCHOTTKY DIODE
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
на замовлення 2875 шт:
термін постачання 21-31 дні (днів)
25+13.15 грн
41+7.84 грн
100+4.84 грн
500+3.31 грн
1000+2.90 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
1.5SMCJ26A_R1_00001 1.5SMCJ26A_R1_00001 Panjit International Inc. 1.5SMCJ_SERIES.pdf Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.6A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
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1.5SMCJ26A_R1_00001 1.5SMCJ26A_R1_00001 Panjit International Inc. 1.5SMCJ_SERIES.pdf Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.6A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
6+60.82 грн
10+39.34 грн
100+27.01 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
1.5SMCJ90CA_R1_00001 1.5SMCJ90CA_R1_00001 Panjit International Inc. Description: SURFACE MOUNT TRANSIENT VOLTAGE
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+28.72 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
1.5SMCJ90CA_R1_00001 1.5SMCJ90CA_R1_00001 Panjit International Inc. Description: SURFACE MOUNT TRANSIENT VOLTAGE
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
7+54.25 грн
10+45.59 грн
100+34.98 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
1.5SMCJ20CA_R1_00001 1.5SMCJ20CA_R1_00001 Panjit International Inc. 1.5SMCJ_SERIES.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
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1.5SMCJ20CA_R1_00001 1.5SMCJ20CA_R1_00001 Panjit International Inc. 1.5SMCJ_SERIES.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
5+76.44 грн
10+45.91 грн
100+29.95 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BC847BFN3_R1_00001 BC847BFN3_R1_00001 Panjit International Inc. BC847BFN3.pdf Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 3-DFN (0.6x1)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товару немає в наявності
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BC847BFN3_R1_00001 BC847BFN3_R1_00001 Panjit International Inc. BC847BFN3.pdf Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 3-DFN (0.6x1)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 4907 шт:
термін постачання 21-31 дні (днів)
17+19.73 грн
25+13.14 грн
100+6.41 грн
500+5.02 грн
1000+3.49 грн
2000+3.02 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
PG601R_R2_00001 PG601R_R2_00001 Panjit International Inc. PG600R_SERIES.pdf Description: DIODE STANDARD 100V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
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PG606R_R2_00001 PG606R_R2_00001 Panjit International Inc. PG600R_SERIES.pdf Description: DIODE STANDARD 600V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PG606R_R2_00001 PG606R_R2_00001 Panjit International Inc. PG600R_SERIES.pdf Description: DIODE STANDARD 600V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PG602R_R2_00001 PG602R_R2_00001 Panjit International Inc. PG600R_SERIES.pdf Description: DIODE STANDARD 200V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PG602R_R2_00001 PG602R_R2_00001 Panjit International Inc. PG600R_SERIES.pdf Description: DIODE STANDARD 200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PG600R_R2_00001 PG600R_R2_00001 Panjit International Inc. PG600R_SERIES.pdf Description: DIODE STANDARD 50V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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PG600R_R2_00001 PG600R_R2_00001 Panjit International Inc. PG600R_SERIES.pdf Description: DIODE STANDARD 50V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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PG604R_R2_00001 PG604R_R2_00001 Panjit International Inc. PG600R_SERIES.pdf Description: DIODE STANDARD 400V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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PG604R_R2_00001 PG604R_R2_00001 Panjit International Inc. PG600R_SERIES.pdf Description: DIODE STANDARD 400V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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PG600J_R2_00001 PG600J_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 600V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PG600J_R2_00001 PG600J_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 600V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PG600B_R2_00001 PG600B_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 100V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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PG600B_R2_00001 PG600B_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 100V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
6+56.71 грн
10+34.11 грн
100+21.97 грн
Мінімальне замовлення: 6
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PG600A_R2_00001 PG600A_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 50V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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PG600A_R2_00001 PG600A_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 50V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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PG600G_R2_00001 PG600G_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 400V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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PG600G_R2_00001 PG600G_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 400V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
6+56.71 грн
10+34.11 грн
100+21.97 грн
Мінімальне замовлення: 6
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PG600K_R2_00001 PG600K_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 800V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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PG600K_R2_00001 PG600K_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 800V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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PG600M_R2_00001 PG600M_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 1000V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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PG600M_R2_00001 PG600M_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 1000V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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PG600D_R2_00001 PG600D_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 200V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PG600D_R2_00001 PG600D_R2_00001 Panjit International Inc. PG600A_SERIES.pdf Description: DIODE STANDARD 200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PJMP390N65EC_T0_00001 PJMP390N65EC_T0_00001 Panjit International Inc. PJMP390N65EC.pdf Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)
2+203.83 грн
10+126.95 грн
100+87.01 грн
500+65.63 грн
1000+60.48 грн
Мінімальне замовлення: 2
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1.5KE300A_R2_00001 1.5KE300A_R2_00001 Panjit International Inc. 1.5KE_SERIES.pdf Description: TVS DIODE 256VWM 414VC DO201AE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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BAT400D_R1_00001 BAT400D_R1_00001 Panjit International Inc. BAT400D.pdf Description: SURFACE MOUNT SCHOTTKY BARRIER D
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
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BAT400D_R1_00001 BAT400D_R1_00001 Panjit International Inc. BAT400D.pdf Description: SURFACE MOUNT SCHOTTKY BARRIER D
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
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BAT43WS-AU_R1_000A1 BAT43WS-AU_R1_000A1 Panjit International Inc. BAT43WS-AU.pdf Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: AEC-Q101
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PJQ5606_R2_00001 PJQ5606.pdf
PJQ5606_R2_00001
Виробник: Panjit International Inc.
Description: MOSFET N/P-CH 30V 7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
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PJQ5606_R2_00001 PJQ5606.pdf
PJQ5606_R2_00001
Виробник: Panjit International Inc.
Description: MOSFET N/P-CH 30V 7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
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PJL9606_R2_00001
Виробник: Panjit International Inc.
Description: 30V COMPLEMENTARY ENHANCEMENT MO
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PJL9606_R2_00001
Виробник: Panjit International Inc.
Description: 30V COMPLEMENTARY ENHANCEMENT MO
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PZS517V5BCH-AU_R1_000A1
PZS517V5BCH-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
товару немає в наявності
В кошику  од. на суму  грн.
PZS517V5BCH-AU_R1_000A1
PZS517V5BCH-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
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PZS517V5BCH_R1_00001
PZS517V5BCH_R1_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
товару немає в наявності
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PZS517V5BCH_R1_00001
PZS517V5BCH_R1_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
товару немає в наявності
В кошику  од. на суму  грн.
PZS517V5BAS_R1_00001
PZS517V5BAS_R1_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
товару немає в наявності
В кошику  од. на суму  грн.
PZS517V5BAS_R1_00001
PZS517V5BAS_R1_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
товару немає в наявності
В кошику  од. на суму  грн.
PZS517V5BAS-AU_R1_000A1
PZS517V5BAS-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
товару немає в наявності
В кошику  од. на суму  грн.
PZS517V5BAS-AU_R1_000A1
PZS517V5BAS-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
товару немає в наявності
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PJP9NA90_T0_00001
PJP9NA90_T0_00001
Виробник: Panjit International Inc.
Description: 900V N-CHANNEL MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 25 V
товару немає в наявності
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MMSZ5232B-AU_R1_000A1 MMSZ5221B-AU_SERIES.pdf
MMSZ5232B-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 5808 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+15.62 грн
35+9.18 грн
100+5.69 грн
500+3.90 грн
1000+3.44 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
MMSZ5232BS-AU_R1_000A1 MMSZ5221BS-AU_SERIES.pdf
MMSZ5232BS-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+2.03 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MMSZ5232BS-AU_R1_000A1 MMSZ5221BS-AU_SERIES.pdf
MMSZ5232BS-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+15.62 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BAS70_R1_00001 BAS70_SERIES.pdf
BAS70_R1_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 70V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
товару немає в наявності
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BAS70_R1_00001 BAS70_SERIES.pdf
BAS70_R1_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 1944 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.15 грн
28+11.56 грн
100+6.29 грн
500+3.64 грн
1000+2.48 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BAS70A_R1_00001 BAS70_SERIES.pdf
BAS70A_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SCHOTTKY DIODE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
товару немає в наявності
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BAS70A_R1_00001 BAS70_SERIES.pdf
BAS70A_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SCHOTTKY DIODE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 2740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.08 грн
23+14.17 грн
100+7.53 грн
500+4.65 грн
1000+3.16 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
BAS40W_R1_00001 BAS40W_SERIES.pdf
BAS40W_R1_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAS40W_R1_00001 BAS40W_SERIES.pdf
BAS40W_R1_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.79 грн
26+12.58 грн
100+6.89 грн
500+3.98 грн
1000+2.71 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BAS40CW_R1_00001 BAS40W_SERIES.pdf
BAS40CW_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SCHOTTKY DIODE
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
товару немає в наявності
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BAS40CW_R1_00001 BAS40W_SERIES.pdf
BAS40CW_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SCHOTTKY DIODE
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
на замовлення 2875 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.15 грн
41+7.84 грн
100+4.84 грн
500+3.31 грн
1000+2.90 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
1.5SMCJ26A_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ26A_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.6A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
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1.5SMCJ26A_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ26A_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.6A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.82 грн
10+39.34 грн
100+27.01 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
1.5SMCJ90CA_R1_00001
1.5SMCJ90CA_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+28.72 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
1.5SMCJ90CA_R1_00001
1.5SMCJ90CA_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+54.25 грн
10+45.59 грн
100+34.98 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
1.5SMCJ20CA_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ20CA_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
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1.5SMCJ20CA_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ20CA_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.44 грн
10+45.91 грн
100+29.95 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BC847BFN3_R1_00001 BC847BFN3.pdf
BC847BFN3_R1_00001
Виробник: Panjit International Inc.
Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 3-DFN (0.6x1)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товару немає в наявності
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BC847BFN3_R1_00001 BC847BFN3.pdf
BC847BFN3_R1_00001
Виробник: Panjit International Inc.
Description: TRANS NPN 45V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 3-DFN (0.6x1)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 4907 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+19.73 грн
25+13.14 грн
100+6.41 грн
500+5.02 грн
1000+3.49 грн
2000+3.02 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
PG601R_R2_00001 PG600R_SERIES.pdf
PG601R_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 100V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
PG606R_R2_00001 PG600R_SERIES.pdf
PG606R_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 600V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
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PG606R_R2_00001 PG600R_SERIES.pdf
PG606R_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 600V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
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PG602R_R2_00001 PG600R_SERIES.pdf
PG602R_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 200V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PG602R_R2_00001 PG600R_SERIES.pdf
PG602R_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PG600R_R2_00001 PG600R_SERIES.pdf
PG600R_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 50V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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PG600R_R2_00001 PG600R_SERIES.pdf
PG600R_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 50V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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PG604R_R2_00001 PG600R_SERIES.pdf
PG604R_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 400V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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PG604R_R2_00001 PG600R_SERIES.pdf
PG604R_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 400V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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PG600J_R2_00001 PG600A_SERIES.pdf
PG600J_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 600V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PG600J_R2_00001 PG600A_SERIES.pdf
PG600J_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 600V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PG600B_R2_00001 PG600A_SERIES.pdf
PG600B_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 100V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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PG600B_R2_00001 PG600A_SERIES.pdf
PG600B_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 100V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.71 грн
10+34.11 грн
100+21.97 грн
Мінімальне замовлення: 6
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PG600A_R2_00001 PG600A_SERIES.pdf
PG600A_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 50V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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PG600A_R2_00001 PG600A_SERIES.pdf
PG600A_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 50V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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PG600G_R2_00001 PG600A_SERIES.pdf
PG600G_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 400V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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PG600G_R2_00001 PG600A_SERIES.pdf
PG600G_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 400V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.71 грн
10+34.11 грн
100+21.97 грн
Мінімальне замовлення: 6
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PG600K_R2_00001 PG600A_SERIES.pdf
PG600K_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 800V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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PG600K_R2_00001 PG600A_SERIES.pdf
PG600K_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 800V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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PG600M_R2_00001 PG600A_SERIES.pdf
PG600M_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 1000V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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PG600M_R2_00001 PG600A_SERIES.pdf
PG600M_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 1000V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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PG600D_R2_00001 PG600A_SERIES.pdf
PG600D_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 200V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PG600D_R2_00001 PG600A_SERIES.pdf
PG600D_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PJMP390N65EC_T0_00001 PJMP390N65EC.pdf
PJMP390N65EC_T0_00001
Виробник: Panjit International Inc.
Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+203.83 грн
10+126.95 грн
100+87.01 грн
500+65.63 грн
1000+60.48 грн
Мінімальне замовлення: 2
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1.5KE300A_R2_00001 1.5KE_SERIES.pdf
1.5KE300A_R2_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 256VWM 414VC DO201AE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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BAT400D_R1_00001 BAT400D.pdf
BAT400D_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SCHOTTKY BARRIER D
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
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BAT400D_R1_00001 BAT400D.pdf
BAT400D_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SCHOTTKY BARRIER D
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
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BAT43WS-AU_R1_000A1 BAT43WS-AU.pdf
BAT43WS-AU_R1_000A1
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: AEC-Q101
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