10A07H EIC SEMICONDUCTOR INC.
Виробник: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 1KV 10A D6
Packaging: Tape & Reel (TR)
Package / Case: D-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D6
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 10A D6
Packaging: Tape & Reel (TR)
Package / Case: D-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D6
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 28.26 грн |
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Технічний опис 10A07H EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 1KV 10A D6, Packaging: Tape & Reel (TR), Package / Case: D-6, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: D6, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.