Виробник: TE Connectivity
Cable Assembly SATA/Power 0.15m 18AWG SATA to Power 15 to 4 POS PL-PL Carton

Виробник: UMW
Transistor N-Channel MOSFET; 30V; 12V; 20mOhm; 15A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7455; IRF7455TR; SP001555380; SP001566270; IRF7455TR UMW TIRF7455 UMW
кількість в упаковці: 25 шт

Виробник: TE Connectivity AMP Connectors
Description: CBL ASSY 4P PL-SATA 15P PL 0.49'
Packaging: Bulk
Connector Type: Rectangular 04 pos Plug to SATA 15 pos Plug
Color: Multiple
Length: 0.49' (150.0mm)
Shielding: Unshielded
Cable Type: Individual

Виробник: Seoul Semiconductor Inc.
Description: LED COB SUNLIKE WM WHT SQ 2700K
Packaging: Tray
Color: White, Warm
Size / Dimension: 19.00mm L x 19.00mm W
Type: Chip On Board (COB)
Configuration: Square
Voltage - Forward (Vf) (Typ): 35.2V
Height: 1.45mm
Current - Test: 720mA
Viewing Angle: 115°
Lens Type: Flat
Current - Max: 1.44A
Lumens/Watt @ Current - Test: 90 lm/W
CCT (K): 2700K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 97 (Typ)
Light Emitting Surface (LES): 14.50mm Dia
Temperature - Test: 85°C
Luminous Flux @ Current/Temperature: 2275lm (Typ)
Part Status: Active

Виробник: 3M (TC)
Description: TAPE DBL SIDED NATU 1 1/2"X5YD
Packaging: Bulk
Color: Natural
Length: 15' (4.6m) 5 yds
Thickness: 0.0630" (63.0 mils, 1.600mm) 1/16"
Temperature Range: 70°F ~ 100°F (21°C ~ 38°C)
Tape Type: Double Coated, Double Sided
Width: 1.50" (38.10mm) 1 1/2"
Usage: Holding, Joining, Mounting
Adhesive: Acrylic, 100
Backing, Carrier: Polyurethane Foam

Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 2.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 2.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 25 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 25 V