19MT050XF

19MT050XF

Производитель:
19MT050XF
19MT050XF.pdf
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Техническое описание 19MT050XF

Description: MOSFET 4N-CH 500V 31A MTP, FET Type: 4 N-Channel (H-Bridge), Supplier Device Package: 16-MTP, Package / Case: 16-MTP Module, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Power - Max: 1140W, Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 25V, Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V, Vgs(th) (Max) @ Id: 6V @ 250µA, Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A, Drain to Source Voltage (Vdss): 500V.

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19MT050XF
Производитель: Vishay Semiconductor Diodes Division
Description: MOSFET 4N-CH 500V 31A MTP
FET Type: 4 N-Channel (H-Bridge)
Supplier Device Package: 16-MTP
Package / Case: 16-MTP Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1140W
Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 6V @ 250µA
Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A
Drain to Source Voltage (Vdss): 500V
19MT050XF.pdf
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