1N1341B Solid State Inc.
Виробник: Solid State Inc.
Description: DIODE GEN PURP 50V 16A DO4
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 16A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Box
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Технічний опис 1N1341B Solid State Inc.
Description: DIODE GEN PURP 50V 16A DO4, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 16A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Box.