1N4385 BK TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 600V 1A DO41
Reverse Recovery Time (trr): 10 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Standard
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Технічний опис 1N4385 BK TIN/LEAD Central Semiconductor Corp
Description: DIODE GEN PURP 600V 1A DO41, Reverse Recovery Time (trr): 10 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AL, DO-41, Axial, Packaging: Bulk, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: DO-41, Current - Average Rectified (Io): 1A, Technology: Standard.