1N4444 TR Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 70V 200MA DO35
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 7 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
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Технічний опис 1N4444 TR Central Semiconductor Corp
Description: DIODE GEN PURP REV 70V 200MA DO7, Current - Reverse Leakage @ Vr: 50 nA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 70 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-7, Current - Average Rectified (Io): 200mA, Technology: Standard, Reverse Polarity, Reverse Recovery Time (trr): 7 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Through Hole, Package / Case: DO-204AA, DO-7, Axial, Packaging: Tape & Reel (TR).
Інші пропозиції 1N4444 TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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1N4444/TR | Виробник : Microchip Technology |
Description: DIODE GEN PURP REV 70V 200MA DO7 Current - Reverse Leakage @ Vr: 50 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 70 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-7 Current - Average Rectified (Io): 200mA Technology: Standard, Reverse Polarity Reverse Recovery Time (trr): 7 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
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| 1N4444/TR | Виробник : Microchip Technology | Zener Diodes |
товару немає в наявності |