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1N457A_T50R onsemi


1N457A.pdf
Виробник: onsemi
Description: DIODE GEN PURP 70V 200MA DO35
Current - Reverse Leakage @ Vr: 25 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 30000 шт
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Технічний опис 1N457A_T50R onsemi

Description: DIODE GEN PURP 70V 200MA DO35, Current - Reverse Leakage @ Vr: 25 nA @ 60 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 70 V, Part Status: Obsolete, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: DO-35, Current - Average Rectified (Io): 200mA, Capacitance @ Vr, F: 8pF @ 0V, 1MHz, Technology: Standard, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Tape & Reel (TR).