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1N5257C-TAP

1N5257C-TAP Vishay General Semiconductor - Diodes Division

1n5221.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 58 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
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Мінімальне замовлення: 30000 шт
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Технічний опис 1N5257C-TAP Vishay General Semiconductor - Diodes Division

Description: DIODE ZENER 33V 500MW DO35, Current - Reverse Leakage @ Vr: 100 nA @ 25 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA, Power - Max: 500 mW, Part Status: Active, Supplier Device Package: DO-35 (DO-204AH), Impedance (Max) (Zzt): 58 Ohms, Voltage - Zener (Nom) (Vz): 33 V, Operating Temperature: -65°C ~ 175°C, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Tolerance: ±2%, Packaging: Tape & Box (TB).