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1N5419 BK TIN/LEAD

1N5419 BK TIN/LEAD Central Semiconductor Corp

1N5415-5420.PDF
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 500V 3A GPR-4AM
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: GPR-4AM
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 110pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-4, Axial
Packaging: Bulk
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Технічний опис 1N5419 BK TIN/LEAD Central Semiconductor Corp

Description: DIODE GEN PURP 500V 3A GPR-4AM, Current - Reverse Leakage @ Vr: 1 µA @ 500 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 500 V, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: GPR-4AM, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 110pF @ 12V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 250 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: R-4, Axial, Packaging: Bulk.