Технічний опис 1N5419US/TR Microchip Technology
Description: DIODE GEN PURP 500V 3A D-5B, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, E, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: D-5B, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 500 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 500 V.
Інші пропозиції 1N5419US/TR
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1N5419US/TR | Виробник : Microchip Technology |
Description: DIODE GEN PURP 500V 3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 500 V |
товару немає в наявності |
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1N5419US/TR | Виробник : Microchip Technology |
 Rectifiers 550V 3A UFR,FRR SQ SMT TR |
товару немає в наявності |